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Abstract
This work reports a boron- and silicon-containing phenolic-formaldehyde (PF) resin exhibiting an extremely high thermal
decomposition temperature and char yield and formed by copolymerizing phenol, formaldehyde, boric acid (BA), and
phenyltriethoxysilane (PTES). The structure of BA and PTES-modified PF (BSPF) resin was characterized by Fourier
transform infrared spectroscopy. Thermal stability of the investigated composites was estimated by means of thermo-
gravimetric analysis (TGA). The results of TGA indicated that the modified resin exhibited excellent thermal stability.
Specifically, the thermoset had a char yield of 77.0% when the boron and silicon contents were only 1.27 wt% and 1.7 wt%,
respectively. Compared with the unmodified resin (PF), the temperature at the maximum decomposing rate of the BSPF
increased by 84 C and its charring yield was enhanced by 15.0%. The cured products of PF and BSPF were further
investigated by X-ray diffraction and Raman spectroscopy, respectively. The incorporation of boron and silicon into the
carbon lattice results in a decrease of interlayer spacing, and Raman ID/IG values for PF and BSPF (2.63 and 1.32) show that
the rearrangement of crystalline structure leads to an increase in graphite structure and a decrease in disordered
structure upon the modification processes.
Keywords
Phenolic, boric acid, phenyltriethoxysilane, thermal stability, structure
OH OH
CH 2OH
CH 2 O
OH OC 2H 5
OH
CH 2 OH B H 5 C 2O Si OC 2H 5
HO OH
OH
B
O O
H2 H2
C C
CH 2 CH 2 CH 2 O
O B
R
O O
H 5C 2 O Si O Si O OH
R O
R C 6H 5
Figure 1. Synthesis route of BSPF. BSPF: boron and silicon-modified phenolic-formaldehyde resin.
Many studies proved that silicon is an effective component (BSPF) resin was prepared by copolymerizing phenol, for-
in improving the antioxidation properties of poly- maldehyde, BA, and phenyltriethoxysilane (PTES). The
mers.17,22,25,26 K. Haraguchi and coworkers26,27 prepared structure of BSPF was characterized by Fourier transform
phenolic/silica hybrid by in situ polymerization of silicon infrared (FTIR) spectroscopy. Thermal stability of the
alkoxide, and both mechanical and thermal properties were investigated composites was estimated by means of TGA
enhanced. Silicone and phenolic resin were incompatible, and derivative thermal gravimetric (DTG). The structure of
and phase separation would always occur in the cured PF and BSPF was also analyzed by X-ray diffraction
hybrids.17,28,29 The phase structure (including dispersion and Raman spectroscopy, respectively.
state,30 particle size,19,31 and interface of the phases26)
would affect the properties of the hybrids. Structural mod-
ification of phenolics results in high thermal stability Experimental
and high carbon yield values upon pyrolysis in nitrogen
(thermogravimetric analysis (TGA)). Incorporation of Materials
boron and phosphorous moieties25–29 and inorganic modi- Phenol, 37% aqueous formalin, BA, hydrochloric acid
fiers30,31 into the phenolic structures are some important (HCl), sodium hydroxide (NaOH), acetone, and ethanol
examples of structural modification methods. were all of analytical grade and were supplied by Sino-
Despite BA and organic silicone having been relatively pharm Chemical Reagent Co., Ltd (China). PTES and hex-
well established as versatile building blocks in both supra- amethylenetetramine were purchased from Aladdin
molecular polymer chemistry and synthetic chemistry, to chemicals Co., Ltd (China). All the above chemicals were
the best of our knowledge, little attempts have been made used as received.
to combine both BA and silicone with PFs, which may
provide high-performance functional polymer materials.
Moreover, the synergistic effect of boron and silicon ele- Preparation of the BSPF
ment on the properties of PF, especially on the thermal The BSPF was synthesized as presented in Figure 1. In
resistance and phase structure, has not been further studied. the mole ratio, phenol: formaldehyde: BA: PTES ¼
With this aim in mind, our present work intends to intro- 1:1.2:0.2:0.1. Phenol, formalin, and NaOH were added into
duce boron and silicon structure into PFs as an effective a four-necked flask equipped with a stirrer, a thermometer,
means of improving their heat resistance. In presented and a condenser. The mixture was stirred to be a homoge-
study, a thermal-resistant boron and silicon-modified PF neous solution and reacted at 70 C for 1–1.5 h. Thereafter,
–1.0
carbon and the G-band (in-plane bond stretching, nearly
BSPF
1580 cm1) is derived from the C–C-stretching mode due
–1.5
to the tangential vibration of carbon.35 The relationship
between the D-band and the G-band intensities should be
–2.0
PF proportional to the degree of structural order with respect to
the graphite structure. This relationship has been largely
–2.5 used in the literature in different forms, such as ID/IG.36
The ID/IG intensity ratios reflect the disorder. The micro-
100 200 300 400 500 600 700 800 crystalline planar size (La), which corresponds to the in-
Temperature (°C)
plane dimension of the single microcrystalline domain in
Figure 4. DTG curves of ordinary PF and BSPF in nitrogen.
carbonized products, can be determined from the integrated
DTG: derivative thermogravimetric; PF: phenolic-formaldehyde; intensity ratio ID/IG as follows2:
BSPF: boron and silicon-modified phenolic-formaldehyde resin. La ¼ 4:35IG =ID
(Figure 3), which demonstrated the effect of introducing the The Raman spectra measured for the PF and BSPF are
boron and alkoxysilane structures had on the thermal stabi- shown in Figure 5. Compared with that of PF, the value ID/IG
lity of PF. As can be seen from Figure 3, the weight loss of of BSPF decreased from 2.63 to 1.32. The crystal size La of
BSPF under nitrogen atmosphere took place in three steps. BSPF is 3.29 nm, much larger than that of PF (1.65 nm). The
Below 300 C, the pyrolysis processes of cured PF and BSPF changes in the Raman spectra of PF demonstrate that the
are similarly, in both of which three major reaction regions rearrangement of crystalline structure leads to an increase in
exist. In the first region, evolution of water, cross-linked by- graphite structure and a decrease in disordered structure after
products and unreacted oligomers, is the main reaction.34 introducing boron and silicon into the backbone of the resin.
The initial decomposition temperature of both PF and BSPF The results indicated that the presence of boron or silicon
is about 300 C. In the range of 300–600 C, significant mass atom in the network did not disrupt the formation of gra-
changes were observed due to the dehydrogenation and phene sheet and was able to promote graphitization of PF.
decomposition reactions that generated a large number of The thermal properties of hybrids may also be attributed to
gaseous volatile, including CO, H2O, small molecule hydro- the formation of more orderly carbon structure.37
carbons, and so on. In the range of 600–800 C, weight loss Evaluation of graphene structure upon the modification
curve became relatively flatter. The changes observed during processes was carried out using XRD patterns. The XRD
PF Conclusion
A kind of BSPF was successfully synthesized by using
BSPF phenol, formaldehyde, BA, PTES, ethanol, HCl, and NaOH
as raw materials. Successful modification of PF by BA and
PTES moieties was confirmed by FTIR bands of B–O and
800 1000 1200 1400 1600 1800 Si–O stretching. Thermal behavior of the products was
Wave number (cm–1) investigated by TGA and DTG. The temperature at the
maximum decomposing rate of the BSPF is 520 C, 84 C
Figure 5. Raman spectra of cured PF and cured BSPF. PF: higher than that of the unmodified ones. Moreover, the
phenolic-formaldehyde; BSPF: boron and silicon-modified
charring yield of BSPF is 77.0%, 15.0% higher than that
phenolic-formaldehyde resin.
of PF. The structure of cured PF and BSPF was studied
using X-ray diffraction and Raman spectroscopy. The
incorporation of boron and silicon into the carbon lattice
20.0 results in a decrease in interlayer spacing. The degree of
graphitization in the PF improved due to the boron and
silicon incorporation, and Raman ID/IG values for PF and
27.9
BSPF (2.63 and 1.32) show that the presence of boron or
19.5 silicon atom in the network was able to promote graphiti-
zation of PF upon the modification processes. The formed
BSPF boronates and silicates blocked parts of phenolic hydroxyl
groups and shortened the distances among the benzene
PF
rings linking to the central boron or silicon atom compared
with PF, which was conducive to the char formation.
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