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AO4614B Rev2 RoHS
AO4614B Rev2 RoHS
SOIC-8
D2 D1
Top View Bottom View
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1 G2 G1
G1 4 5 D1
S2 S1
40 30
10V
35 5V VDS=5V
25
30 4.5V
20
25
4V
ID (A)
ID(A)
20 15
15
10 125°C
10 VGS=3.5V
25°C
5 5
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
36 1.8
34 VGS=4.5V
Normalized On-Resistance
1.6
32 VGS=10V
1.4 ID=6A
RDS(ON) (mΩ )
30
28 1.2
26 VGS=10V VGS=4.5V
1 ID=5A
24
0.8
22
20 0.6
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature
80 100 9
ID=6A 12
70 10
60
1
RDS(ON) (mΩ )
50
IS (A)
125°C 0.1
40 125°C
0.01 25°C
25°C
30
0.001
20
10 0.0001
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10 800
VDS=20V
8 ID= 6A
600 Ciss
Capacitance (pF)
VGS (Volts)
6
400
4
200 Crss
2 Coss
0 0
0 2 4 6 8 10 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100 1000
TJ(Max)=150°C
10µs TA=25°C
10
100µs 100
Power (W)
ID (Amps)
1 RDS(ON) 1ms
limited 10ms
0.1s 10
0.1 1s
TJ(Max)=150°C 10s
TA=25°C DC
0.01 1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E)
Ambient (Note E)
9
10
12
D=Ton/T In descending order
Zθ JA Normalized Transient
RθJA=74°C/W
1
0.1 PD
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 30
-10V VDS=-5V
25 -5V 25
-4V
20 -4.5V 20
-ID (A)
-ID(A)
15 15
VGS=-3.5V
10 10 125°C
5 5 25°C
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
-VDS (Volts) -VGS(Volts)
Fig 12: On-Region Characteristics Figure 13: Transfer Characteristics
60
1.5 VGS=-10V
VGS=-4.5V ID=-5A
55
RDS(ON) (mΩ )
1.3
50
45 1.1 VGS=-4.5V
ID=-4A
40 VGS=-10V
0.9
35
30 0.7
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
130 100 9
ID=-5A 12
10
110
1
RDS(ON) (mΩ )
90 125°C
-IS (A)
0.1
70 125°C
0.01 25°C
50 0.001
25°C
30 0.0001
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10 1400
VDS=-20V
ID= -5A 1200
8 Ciss
Capacitance (pF)
1000
-VGS (Volts)
6
800
4 600
400 Crss
2 Coss
200
0 0
0 3 6 9 12 15 18 0 10 20 30 40
Qg (nC) -VDS (Volts)
Figure 18: Gate-Charge Characteristics Figure 19: Capacitance Characteristics
100 1000
TJ(Max)=150°C
10µs
TA=25°C
10
100µs 100
-ID (Amps)
Power (W)
1 RDS(ON) 1ms
limited 10ms
0.1s 10
0.1 1s
TJ(Max)=150°C 10s
TA=25°C DC
0.01
0.1 1 10 100 1
-VDS (Volts) 0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 20: Maximum Forward Biased Safe
Figure 21: Single Pulse Power Rating Junction-
Operating Area (Note E)
to-Ambient (Note E)
9
10 12
D=Ton/T In descending order
Zθ JA Normalized Transient
RθJA=74°C/W
1
0.1 PD
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance