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Opa 827
Opa 827
OPA827
SBOS376I – NOVEMBER 2006 – REVISED JULY 2016
50nV/div
10
1
0.1 1 10 100 1k 10k Time (1s/div)
Frequency (Hz)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA827
SBOS376I – NOVEMBER 2006 – REVISED JULY 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 21
2 Applications ........................................................... 1 8.1 Application Information............................................ 21
3 Description ............................................................. 1 8.2 Typical Application .................................................. 21
4 Revision History..................................................... 2 8.3 System Examples .................................................. 22
5 Pin Configuration and Functions ......................... 4 9 Power Supply Recommendations...................... 24
6 Specifications......................................................... 5 10 Layout................................................................... 25
6.1 Absolute Maximum Ratings ...................................... 5 10.1 Layout Guidelines ................................................. 25
6.2 ESD Ratings.............................................................. 5 10.2 Layout Example .................................................... 25
6.3 Recommended Operating Conditions....................... 5 11 Device and Documentation Support ................. 26
6.4 Thermal Information .................................................. 5 11.1 Device Support...................................................... 26
6.5 Electrical Characteristics........................................... 6 11.2 Documentation Support ........................................ 26
6.6 Typical Characteristics .............................................. 8 11.3 Receiving Notification of Documentation Updates 26
7 Detailed Description ............................................ 15 11.4 Community Resource............................................ 26
7.1 Overview ................................................................. 15 11.5 Trademarks ........................................................... 26
7.2 Functional Block Diagram ....................................... 15 11.6 Electrostatic Discharge Caution ............................ 26
7.3 Feature Description................................................. 15 11.7 Glossary ................................................................ 26
7.4 Device Functional Modes........................................ 20 12 Mechanical, Packaging, and Orderable
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
• Deleted Package/Ordering Information table, see POA at the end of the data sheet............................................................ 4
• Changed values in the Thermal Information table to align with JEDEC standards................................................................ 5
• Changed Input bias current and Input offset drift Features bullets ........................................................................................ 1
• Changed product status from Mixed Status to Production Data ............................................................................................ 1
• Changed description of amplifier drift and bias current in first paragraph of Description section .......................................... 1
• Deleted high grade (OPA827I) option and footnote 2 from Package/Ordering Information table.......................................... 4
• Deleted high grade (OPA827I) option from Electrical Characteristics table........................................................................... 6
• Changed Offset Voltage, Input Offset Voltage Drift parameter typical and maximum specifications in Electrical
Characteristics table ............................................................................................................................................................... 6
• Changed Input Bias Current section specifications in Electrical Characteristics table........................................................... 6
• Changed -40°C to +85°C Input Bias Current parameter unit ................................................................................................. 6
• Added Frequency Response, Slew Rate parameter minimum specification to Electrical Characteristics table .................... 6
• Added Output, Short-Circuit Current parameter minimum specification to Electrical Characteristics table ........................... 7
• Updated Figure 7.................................................................................................................................................................... 8
• Updated Figure 8.................................................................................................................................................................... 8
(1) (1)
NC 1 8 NC
-In 2 7 V+
+In 3 6 Out
(1)
V- 4 5 NC
Pin Functions
PIN
I/O DESCRIPTION
NO. NAME
+IN 3 I Noninverting input
–IN 2 I Inverting input
NC 1, 5, 8 — No internal connection (can be left floating)
OUT 6 O Output
V+ 7 — Positive power supply
V– 4 — Negative power supply
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage, VS = (V+) – (V–) 40 V
Input voltage (2) (V–) – 0.5 (V+) + 0.5 V
Input current (2) ±10 mA
Differential input voltage ±VS V
Output short-circuit (3) Continuous
Operating temperature, TA –55 150 °C
Junction temperature, TJ 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must
be current-limited to 10 mA or less.
(3) Short-circuit to VS/2 (ground in symmetrical dual-supply setups).
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
100 100
Voltage Noise Density (nV/ÖHz)
10 1
VRMS
0.1
Noise Bandwidth: 0.1Hz
to indicated frequency.
1 0.01
0.1 1 10 100 1k 10k 1 10 100 1k 10k 100k 1M 10M
Frequency (Hz) Bandwidth (Hz)
Figure 1. Input Voltage Noise Density vs Frequency Figure 2. Integrated Input Voltage Noise vs Bandwidth
0.01 0.01
VS = ± 15V
RL = 600Ω
VOUT = 3VRMS
0.001 G = 10 0.001
THD+N (%)
THD+N (%)
G=1
0.0001 G=1 0.0001
VS = ± 15V
RL = 600 Ω
f = 1 kHz G = 10
0.00001 0.00001
20 100 1k 10k 20k 10m 100m 1 10 20
Frequency (Hz) G000
Voltage (Vrms) G001
Figure 3. Total Harmonic Distortion + Noise Ratio Figure 4. Total Harmonic Distortion + Noise Ratio
vs Frequency vs Amplitude
VS = ±15V
Population
50nV/div
-150
-135
-120
-105
60
75
90
105
120
135
150
-90
-75
-60
-45
-30
-15
15
30
45
Time (1s/div)
Offset Voltage (mV)
20 150
100
15 50
VOS (mV)
0
10 -50
-100
5
-150
-200
0
-250
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0
Offset Voltage Drift (µV/°C) G001 VCM (V)
Figure 7. Offset Voltage Drift Production Distribution Figure 8. Offset Voltage vs Common-Mode Voltage
250 15
VS = 36V 10 Typical Units Shown 10
200
5
150 0
-5
100 -10
VOS Shift (mV)
50 -15
VOS (mV)
-20
0 -25
-30
-50
-35
-100 -40
-45
-150 -50
-200 -55
-60 VS = ±15V 20 Typical Units Shown
-250 -65
3 8 13 18 23 28 33 0 50 100 150 200 250 300
VCM (V) Time (s)
100 4
50 2
VOS (mV)
Figure 11. Offset Voltage vs Temperature Figure 12. Input Bias Current and Offset Current
vs Supply Voltage
0 6000
Unit 3
-5
4000
-10 Unit 2
-15 2000
-20
0
-18 -15 -12 -9 -6 -3 0 3 6 9 12 15 18 −50 −25 0 25 50 75 100 125 150
VCM (V) Temperature (°C) G002
Figure 13. Input Bias Current vs Common-Mode Voltage Figure 14. Input Bias Current vs Temperature
0.05 6.0
10 Typical Units Shown
0
VS = ±18V
-0.05 5.5
-0.10
I Q Shift (mA)
5.0
IQ (mA)
-0.15
VS = ±5V
-0.20
-0.25 4.5
-0.30
-0.35 4.0
-0.40
-0.45 3.5
0 50 100 150 200 250 300 -75 -50 -25 0 25 50 75 100 125 150
Time (s) Temperature (°C)
Figure 15. Normalized Quiescent Current vs Time Figure 16. Quiescent Current vs Temperature
5.00 5
VS = ±5V
4
4.95 -55°C
3
-40°C
4.90
2
Output Swing (V)
4.85 1
IQ (mA)
+150°C +25°C
4.80 0 +125°C
+85°C -40°C
-1
4.75
-2
4.70 -55°C
-3
4.65 -4
4.60 -5
8 13 18 23 28 33 38 20 30 40 50 60 70 73
VS (V) Output Current (mA)
Figure 17. Quiescent Current vs Supply Voltage Figure 18. Output Voltage Swing vs Output Current
120
4
PSRR (dB)
+150°C +125°C +85°C 100
0 Negative
+25°C -40°C -55°C 80
-4
60
-8 40
-12 20
-16 0
48 53 58 63 68 73 0.1 1 10 100 1k 10k 100k 1M 10M 100M
Output Current (mA) Frequency (Hz)
Figure 19. Output Voltage Swing vs Output Current Figure 20. Power-Supply Rejection Ratio vs Frequency
140 0.30
VS ³ 10V
120
0.25
100
PSRR (mV/V)
CMRR (dB)
0.20
80
0.15
60
40 0.10
20 0.05
0.1 1 10 100 1k 10k 100k 1M 10M 100M -75 -50 -25 0 25 50 75 100 125 150
Frequency (Hz) Temperature (°C)
Figure 21. Common-Mode Rejection Ratio vs Frequency Figure 22. Power-Supply Rejection Ratio vs Temperature
1.6 140 0
1.4
120
1.2
100 -45
1.0
CMRR (mV/V)
0.8 80
Gain (dB)
Phase (°)
Phase
0.6 60 -90
0.4
40
0.2
20 -135
0.0
-0.2 0
Gain
-0.4 -20 -180
-75 -50 -25 0 25 50 75 100 125 150 1 10 100 1k 10k 100k 1M 10M 100M
Temperature (°C) Frequency (Hz)
Figure 23. Common-Mode Rejection Ratio vs Temperature Figure 24. Open-Loop Gain and Phase vs Frequency
AOL (mV/V)
Gain (dB)
0.8
10
G = +1 0.6
0
-10
0.4
-20
-30 0.2
100 1k 10k 100k 1M 10M 100M -75 -50 -25 0 25 50 75 100 125 150
Frequency (Hz) Temperature (°C)
Figure 25. Closed-Loop Gain vs Frequency Figure 26. Open-Loop Gain vs Temperature
1000 70
100mV Output Step G = +1
Open-Loop Output Impedance (ZO)
60
50
100
Overshoot (%)
40 G = -1
30
10
20
10
1 0
100 1k 10k 100k 1M 10M 100M 0 100 200 300 400 500 600 700 800 900 1000
Frequency (Hz) Capacitive Load (pF)
Figure 27. Open-Loop Output Impedance vs Frequency Figure 28. Small-Signal Overshoot vs Capacitive Load
G = -10
VOUT
Output
5V/div
5V/div
0V
+18V 10kW
1kW
OPA827 VIN
OPA827 VOUT
Output -18V VIN
37VPP
Sine Wave
(±18.5V)
20mV/div
5V/div
+18V
0V
10kW OPA827
1kW
-18V RL CL
OPA827 VOUT
VIN
VOUT
Figure 31. Negative Overload Recovery Figure 32. Small-Signal Step Response
C1
5.6pF
20mV/div
R1 R2
2V/div
1kW 1kW
+18V
OPA827
CL
G = +1
G = -1 -18V RL = 1kW
CL = 100pF CL = 100pF
Figure 33. Small-Signal Step Response Figure 34. Large-Signal Step Response
1.0 0.010
0.8 0.008
0.6 0.006
D From Final Value (mV)
0 0
-0.2 -0.002
(±1/2 LSB =
-0.4 ±0.00075%) -0.004
-0.6 -0.006
G = -1 -0.8 -0.008
CL = 100pF
-1.0 -0.010
0 100 200 300 400 500 600 700 800 900 1000
Time (0.5ms/div) Time (ns)
10 VPP, CL = 100 pF
Figure 35. Large-Signal Step Response Figure 36. Large-Signal Positive Settling Time
Figure 37. Large-Signal Positive Settling Time Figure 38. Large-Signal Negative Settling Time
1.0 0.010 80
Sourcing
0.8 0.008 60
0.6 0.006
D From Final Value (mV)
40
D From Final Value (%)
0.4 0.004
16-Bit
0.2 Settling 0.002 20
ISC (mA)
0 0 0
-0.2 -0.002
(±1/2 LSB = -20
-0.4 ±0.00075%) -0.004
-40
-0.6 -0.006
Sinking
-0.8 -0.008 -60
Figure 39. Large-Signal Negative Settling Time Figure 40. Short-Circuit Current vs Temperature
7 Detailed Description
7.1 Overview
The OPA827 is a unity-gain stable, precision operational amplifier with very low noise, input bias current, and
input offset voltage. Applications with noisy or high-impedance power supplies require decoupling capacitors
placed close to the device pins. In most cases, 0.1-µF capacitors are adequate.
V+
IN+ IN-
OUT
V-
Copyright © 2016, Texas Instruments Incorporated
EO
OPA211
1k
RS
100
OPA827
Resistor Noise
10
2 2 2
EO = en + (in RS) + 4kTRS
1
100 1k 10k 100k 1M
Source Resistance, RS (W)
Figure 41. Noise Performance of the OPA827 and OPA211 in Unity-Gain Buffer Configuration
NOTE
Low-impedance feedback resistors load the output of the amplifier. The equations for total
noise are shown for both configurations shown in both configurations in Figure 42.
2 2
2 R2 2 2 2 2 2 2 R2
R1 EO = 1 + en + e1 + e2 + (inR2) + eS + (inRS) 1+
R1 R1
EO
R2
Where eS = Ö4kTRS ´ 1 + = thermal noise of RS
R1
RS
R2
e1 = Ö4kTR1 ´ = thermal noise of R1
R1
VS
2
2 R2 2 2 2 2 2
R1 EO = 1+ en + e1 + e2 + (inR2) + eS
R 1 + RS
EO
RS R2
Where eS = Ö4kTRS ´ = thermal noise of RS
R1 + RS
VS
R2
e1 = Ö4kTR1 ´ = thermal noise of R1
R1 + RS
NOTE
the input signal and load applied to the op amp are the same as with conventional
feedback without R3. The value of R3 must be kept small to minimize its effect on the
distortion measurements.
R1 R2
SIGNAL DISTORTION
GAIN GAIN R1 R2 R3
1 101 ¥ 1kW 10W
R3 OPA827 VO = 3VRMS
R 11 101 100W 1kW 11W
Signal Gain = 1+ 2
R1
R2
Distortion Gain = 1+
R1 II R3
Generator Analyzer
Output Input
Audio Precision RL
System Two(1) 600W
with PC Controller
100mV/div
VIN
50mV/div
VOUT
20ms/div
VIN
50mV/div
VOUT
20ms/div
CF
( 1
4pRFUGBW )(
1+ 1+ (8pCTOTRFUGBW
) (1)
RF
1MW
(2)
CSTRAY
+VS
-VS
V+
IN+ IN-
OUT
V-
Copyright © 2016, Texas Instruments Incorporated
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
R4 C5
2.94 k 1 nF
±
R1 R3 Output
590 499 +
Input OPA140
C2
39 nF
0
Gain (db)
-20
-40
-60
100 1k 10k 100k 1M
Frequency (Hz)
Scaling
Amplifier
Low-Pass Filter
Current
Source
Current
Source Level Adjustment and
Buffer Amplifier
Divider
1/N
NOTE
CODE is the digital input into the DAC.
The DAC output impedance as seen looking into the IOUT terminal changes versus code. The low offset voltage
of the OPA827 minimizes the error propagated from the DAC.
For a current-to-voltage design (see Figure 51), the DAC8811 IOUT pin and the inverting node of the OPA827
must be as short as possible and adhere to good PCB layout design. For each code change on the output of the
DAC, there is a step function. If the parasitic capacitance is excessive at the inverting node, then gain peaking is
possible. For circuit stability, two compensation capacitors, C1 and C2 (4 pF to 20 pF typical) can be added to the
design.
Some applications require full four-quadrant multiplying capabilities or a bipolar output swing. As shown in
Figure 51, the OPA827 is added as a summing amp and has a gain of 2x that widens the output span to 20 V. A
four-quadrant multiplying circuit is implemented by using a 10-V offset of the reference voltage to bias the
OPA827.
10kW 10kW
C2
VDD 5kW
CAUTION
Supply voltages larger than 40 V can permanently damage the device; see the
Absolute Maximum Ratings.
Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-
impedance power supplies. For more detailed information on bypass capacitor placement, see Layout.
10 Layout
N/C N/C
RG
GND ±IN V+ GND
11.5 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 24-Mar-2023
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
OPA827AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA Samples
827
A
OPA827AIDG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA Samples
827
A
OPA827AIDGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green Call TI | NIPDAUAG Level-2-260C-1 YEAR -40 to 125 NSP Samples
| NIPDAU
OPA827AIDGKT ACTIVE VSSOP DGK 8 250 RoHS & Green Call TI | NIPDAUAG Level-2-260C-1 YEAR -40 to 125 NSP Samples
| NIPDAU
OPA827AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA Samples
827
A
OPA827AIDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA Samples
827
A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 24-Mar-2023
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
Width (mm)
H
W
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
TUBE
T - Tube
height L - Tube length
W - Tube
width
Pack Materials-Page 3
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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