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Reversible High Speed Binary Content Addressable

Memory array design using Transmission Gate


2023 3rd International conference on Artificial Intelligence and Signal Processing (AISP) | 979-8-3503-2074-9/23/$31.00 ©2023 IEEE | DOI: 10.1109/AISP57993.2023.10134833

Logic
1 Alekhya Yalla, 1 Umakanta Nanda, 1 Chandan Kumar Pandey and 2 Shujun Ye
1 School of Electronics Engineering, VIT-AP University, Amaravati, 522237, Andhra Pradesh, India.
2 Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China

Abstract—In this work, Energy efficient Binary content ad- are used in the design and implementation of nanotechnology
dressable memory (BiCAM) is designed using reversible logic and quantum computing [11]. Design challenge is to design
which is in high demand in fields of quantum computing, nano a reliable system with high integrity of signal [12]. Power
technology, data centric computing, software-defined networks
and wide variety of high speed applications. BiCAM performs consumption of circuits can be reduced by using reversible
search operation in a single clock cycle. Binary content address- logic [13].
able memory (BiCAM) design based on reversible logic reduces Reversible logic allows us to generate outputs from inputs
power dissipation. Due to minimum heat dissipation, Reversible and vice versa which is known as logical reversibility [14]. In
logic has gained its interest in recent years. A novel design BiCAM cell, power dissipation increases during matching op-
of BiCAM array using reversible logic gates with transmission
gate logic improves speed and reversibility ensures low power. eration due to its high-speed characteristics [15]. So, proposed
The proposed reversible logic based 4x3 BiCAM array using work uses reversible logic gates using transmission gate logic
transmission gates is implemented using mentor graphics at for designing BiCAM in order to improve energy efficiency,
130nm technology with Vdd=1.2V shows 95.2% efficiency in Quantum cost, the number of garbage outputs and delay.
power compared to CMOS based BiCAM design. All reversible The rest of this work is arranged as follows. Section 2
logic gates used in BiCAM design as analysed using transmission
gate logic and compared with conventional gates. represents review work on BiCAM. Section 3 shows simula-
Index Terms—BiCAM, Reversible logic, SRAM, Quantum cost, tion and analysis of reversible logic gates implemented using
energy efficiency, Low power transmission gate logic and 4X3 BiCAM array. Section 4 and
5 describes about discussion and conclusive summary.
I. I NTRODUCTION
Binary content addressable memory (BiCAM) is a special
type of memory used to perform search operation in single
II. R ELATED W ORKS
clock cycle [1]. BiCAMs are used in applications like data
compression, networking, in-memory computing and neural
networks [2]. Computer networking performs look up table A technique was proposed to reduce power consumption
function in a single clock cycle [3]. BiCAM operates at of match lines contains addressable memories called selective
high-speed compared to other memories but heat dissipation pre-charge technique [16]. In this work, the match line is
is more due to which power dissipation is high [4] [5]. separated into two segments [17]. In the first segment, the
Increase in power dissipation effects junction temperatures search operation is conducted for first few bits of a word. In
of the chip and also reduces performance [6]. So proposed other words, a small portion of the CAM cell is searched.
work investigates on designing reversible logic based BiCAM After this if the data is found in this first search, then
cells using transmission gate logic. Information lost due to remaining bits searching operation will be activated in the
every computation will generate heat in the system [7]. The second search. As per it’s name, CAM is a storage memory,
information will loss when the data transmit from input to where the conventional memory access is not followed where
output [8]. the memory address is required, rather the content of the
According to R. Landauer’s research in the 1960’s, Energy memory is required here to access the memory block. Here
lost for every computation will be KTln2 Joules and it will the CAM first receives the input word and then search it in
be dissipated in the form of heat, where K is the Boltzmann’s the table of data words present in the BiCAM. If the data
constant and T is the operating temperature [9]. According to is found in the table, the CAM returns the address where
Bennett, Heat dissipated is zero when a circuit is designed searched word is stored. The proposed reversible logic gate
using reversible logic, If information lost is zero then such based BiCAM design using transmission gate logic improves
circuits are called reversible [10]. Reversible logic devices energy efficiency of memory without degrading speed.

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Fig. 1: Input-Output mapping and truth table representation of
Fredkin gate

III. I MPLEMENTATION OF 4 X 3 B INARY C ONTENT


A DDRESSABLE M EMORY ARRAY USING R EVERSIBLE
L OGIC G ATES
A. Fredkin Gate
It is a Universal gate which can be programmed as various
logic gates. It has one to one mapping as in Fig. 1. The input
and output vector are denoted as I (A, B, C) and O (P, Q, (a) Schematic of Fredkin gate using CMOS Logic
R). The output of Fredkin gate is denoted as P=A, Q=AB
xor AC and R=AC xor AB. Quantum cost of a Fredkin Gate
is 5. It is also called “CONTROLLED SWAP GATE”. Truth
table and block diagram of Fredkin gate is as in Fig. 1. The
following Fig. 2a and Fig. 2b shows schematic of Fredkin
gate implemented using both CMOS and Pass Transistor logic.
Transient analysis of Fredkin gate is simulated at Vdd=1.2V
is indicated in Fig. 3.
B. Feynman Gate
Feynman Gate is also called as copying gate or controlled
NOT gate or fan-out gate. It is one of reversible gate which
can act as buffer. The input vector is I(A, B) implements logic
functions P=A, Q=A xor B using Truth table shown in Fig. 4.
Here B acts as a control signal and generated complemented
output if B=1. The outputs are defined by Quantum cost of a
Feynman gate is 1. Feynman Gate can be used as Quantum xor
gate. This gate is used for duplication of outputs. Schematics
of Feynman gate using CMOS logic and Transmission gate
logic are shown in Fig. 5a and Fig. 5b. Transient simulation
of Feynman gate is performed at Vdd=1.2V as in Fig. 6.
C. Peres Gate
The inputs are denoted with A, B, C and outputs are
represented as P = A, Q = A xor B and R=AB xor C using
truth table as in Fig. 7. Quantum cost of a Peres Gate is
4. In BiCAM cell design, Peres Gate is used as number of
primitive gates required to realize circuit are less. Peres gate
is implemented using CMOS and Transmission gate logic as
in Fig. 8aand Fig. 8b. Fig. 9 shows transient simulation of
Peres gate is performed at Vdd=1.2V.
D. Toffoli Gate
Toffoli Gate is a self-reversible gate. It is a 3x3 mapped
logic function with input and output vectors indicated as I (A,
B, C) and O (P, Q, R). In Toffoli gate two inputs B and C are (b) Schematic of Transmission gate logic based Fredkin gate
unchanged and other input A inverts when B=1 and C=1. The
Fig. 2: Fredkin gate implemented using CMOS and Transmis-
sion Gate Logic

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Fig. 3: Transient simulation of Fredkin Gate at Vdd=1.2V

(a) Schematic of CMOS logic based Feynman gate

Fig. 4: Input-Output mapping and truth table representation of


Feynman gate

outputs are defined by P=A, Q=B, R=A.B XOR C according


to truth table in Fig. 10. Quantum cost of a Toffoli Gate is
5. Schematics of Toffoli gate implemented using CMOS and
Transmission gate logic are shown in Fig. 11a and Fig. 11b .

E. 4X3 BiCAM Array design using reversible logic gates


BiCAM cell consists of 5 reversible gates. They are Fredkin,
three Feynman gates and Peres gate as in Fig. 13. SRAM cell
designed using Fredkin and Feynman gate is used to store
data [18][19]. Search line is given as input to 2x2 Feynman (b) Schematic of Transmission gate logic based Fredkin gate
gate. Ex-or of data input and search line is given as input to Fig. 5: Feynman gate implemented using CMOS and Trans-
one more 2x2 Feynman gate. Search line data is compared to mission Gate Logic
data stored in cell, if both the data are same then data will
be passed to next BiCAM cell of same column. Here, A 2x2
Feynman gate with constant input 1 is used as NOT gate.
Peres gate is used to compare match line data from current
state and previous state. If both are low then output will be
low. Fig. 14 shows 4x3 BiCAM array formed by connecting all
the peripheral circuits and BiCAM cell, with match-line sense
amplifiers and Encoder circuit. Transient analysis is performed
for BiCAM array as in Fig. 15.

IV. R ESULTS AND D ISCUSSIONS


All the simulations mentioned above are performed using
Mentor Graphics tool at 130nm technology with Vdd=1.2V.
This tool supports full custom Integrated circuit layout. Mentor
graphics tool is a computer aided design as ASIC’s approach. Fig. 6: Simulation analysis of Feynman Gate at Vdd=1.2V
This is to employ design and simulate new ideas in IC’s before

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Fig. 7: Input-Output mapping and truth table representation of
Peres gate
Fig. 9: Simulation analysis of Peres Gate at Vdd=1.2V

Fig. 10: Input-Output mapping and truth table representation


of Toffoli gate

going to the consuming and expensive process of chip fabri-


cation. Using Mentor Graphics’ design environment S-Edit,
one can enter designs in schematic or Verilog-A format, and
then move on to simulate in eldo simulator. Eldo simulation
(a) Schematic of CMOS logic based Peres gate is used to put some source at the input to get IV curve, once
u get that in EZ waves, there are tools built in to EZ wave to
calculate different parameters.
BiCAM array is implemented using reversible logic gates as it
dissipates zero heat virtually if a system is able to return to its
initial state. Reversible logic gates have one to one mapping
between inputs and outputs. It has to be inverse or dual. All
the simulations of reversible gates is carried out and compared
as shown in Fig. 17. Power dissipated in reversible logic
gates is further reduced by implementing reversible gates in
CMOS and Transmission gate logic. It is observed that power
dissipated is improved using Transmission gate logic by 95.2%
compared to CMOS logic for Fredkin Gate. Power Delay
Product of two logic’s is compared for Feynman gate, it shows
that Transmission gate logic has improved efficiency. Peres
gate simulation shows that power dissipation has improved by
98.9% for transmission gate logic compared to CMOS logic.
It is observed that power is improved using Transmission gate
logic by 95.2% compared to CMOS.
A 4x3 BiCAM array is implemented using CMOS and trans-
(b) Schematic of Transmission gate logic based Feynman gate mission gate logic, it is observed that number of transistors
Fig. 8: Peres gate implemented using CMOS and Transmission are reduced using transmission gate logic to 728 where using
Gate Logic CMOS logic is 1264. 98.6% efficiency in PDP is achieved
using transmission gate logic over CMOS logic as shown

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Fig. 13: BiCAM cell design using various reversible logic
gates
(a) Schematic of CMOS logic based Toffoli gate

Fig. 14: Schematic of 4x3 BiCAM array using reversible logic


gates
(b) Schematic of Transmission gate logic based Toffoli gate
Fig. 11: Toffoli gate implemented using CMOS and Transmis-
sion Gate Logic

Fig. 15: Transient simulation of 4x3 BiCAM array using


Fig. 12: Transient simulation analysis of Tofolli Gate at reversible logic gates at Vdd=1.2V
Vdd=1.2V

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R EFERENCES
[1] Mannhee Cho and Youngmin Kim. Nanoelectromechanical memory
switch based ternary content-addressable memory. In 2020 International
SoC Design Conference (ISOCC), pages 274–275. IEEE, 2020.
[2] Yu Qian, Zhenhao Fan, Haoran Wang, Chao Li, Mohsen Imani, Kai Ni,
Grace Li Zhang, Bing Li, Ulf Schlichtmann, Cheng Zhuo, et al. Energy-
aware designs of ferroelectric ternary content addressable memory. In
2021 Design, Automation & Test in Europe Conference & Exhibition
(DATE), pages 1090–1095. IEEE, 2021.
[3] Kostas Pagiamtzis and Ali Sheikholeslami. Content-addressable memory
(cam) circuits and architectures: A tutorial and survey. IEEE journal of
solid-state circuits, 41(3):712–727, 2006.
[4] Subhajit Das, Debaprasad Das, and Hafizur Rahaman. Design of content
addressable memory cell using carbon nanotube field effect transistors.
In 2016 IEEE Students’ Technology Symposium (TechSym), pages 131–
135. IEEE, 2016.
Fig. 16: Power Delay Product of reversible BiCAM array [5] Hammad Riaz, Abdul Aziz Bhatti, Muhammad Ashraf Tahir, and
design using transmission gate logic simulated at Vdd=1.2V Muhammad Sarwar. High speed content addressable memory with
reduced size and less power consumption. In 2016 International Con-
ference on Design and Technology of Integrated Systems in Nanoscale
Era (DTIS), pages 1–6. IEEE, 2016.
[6] Mohammed Zackriya and Harish M Kittur. Precharge-free, low-power
content-addressable memory. IEEE Transactions on Very Large Scale
Integration (VLSI) Systems, 24(8):2614–2621, 2016.
[7] Anil Kumar Rajput, Santosh Chouhan, and Manisha Pattanaik. Low
power boolean logic circuits using reversible logic gates. In 2019
International Conference on Advances in Computing, Communication
and Control (ICAC3), pages 1–6. IEEE, 2019.
[8] Prashant R Yelekar and Sujata S Chiwande. Design of sequential circuit
using reversible logic. In IEEE-International Conference On Advances
In Engineering, Science And Management (ICAESM-2012), pages 321–
326. IEEE, 2012.
[9] Mummadi Swathi and Bhawana Rudra. Implementation of reversible
logic gates with quantum gates. In 2021 IEEE 11th Annual Computing
and Communication Workshop and Conference (CCWC), pages 1557–
1563. IEEE, 2021.
[10] Charles H Bennett. Logical reversibility of computation. IBM journal
of Research and Development, 17(6):525–532, 1973.
[11] Ameer MS Abdelhadi and Guy GF Lemieux. Deep and narrow
binary content-addressable memories using fpga-based brams. In 2014
International Conference on Field-Programmable Technology (FPT),
pages 318–321. IEEE, 2014.
[12] Kostas Pagiamtzis, Navid Azizi, and Farid N Najm. A soft-error
Fig. 17: Power Delay Product of reversible logic gates is tolerant content-addressable memory (cam) using an error-correcting-
compared by simulating at Vdd=1.2V match scheme. In IEEE Custom Integrated Circuits Conference 2006,
pages 301–304. IEEE, 2006.
[13] W David Pan and Mahesh Nalasani. Reversible logic. IEEE Potentials,
24(1):38–41, 2005.
in Fig. 16. The total quantum cost and power dissipation of [14] Souvik Majumder, Shreya Bhattacharyya, Papiya Debnath, and Manash
the proposed reversible logic based transmission gate BiCAM Chanda. Power delay analysis of cmos reversible gates for low
power application. In 2020 International Conference on Computational
cell is reduced compared to conventional CMOS logic based Performance Evaluation (ComPE), pages 620–625. IEEE, 2020.
BiCAM cell. [15] Venkata Ramana Datti and PV Sridevi. Performance evaluation of
content addressable memories. In 2018 7th International Conference on
Reliability, Infocom Technologies and Optimization (Trends and Future
V. C ONCLUSION Directions)(ICRITO), pages 596–598. IEEE, 2018.
[16] Woong Choi, Jongsun Park, Hoonki Kim, Changnam Park, and Taejoong
In this paper, using BiCAM cells a 4x3 reversible logic Song. Half-and-half compare content addressable memory with charge-
based BiCAM array with improved speed using transmission sharing based selective match-line precharge scheme. In 2018 IEEE
gates has been designed operating with Vdd=1.2V at 130nm Symposium on VLSI Circuits, pages 17–18. IEEE, 2018.
[17] Debasish Nayak, Umakanta Nanda, Prakash Kumar Rout, Sudhansu Mo-
technology. It is observed that performance indices like han Biswal, Dhananjaya Tripthy, Sanjit Kumar Swain, Biswajit Baral,
quantum cost, garbage output, delay, constant inputs and gate and Satish Kumar Das. A novel driver less SRAM with indirect read for
count are reduced compared with conventional CMOS based low energy consumption and read noise elimination. In 2019 Devices
for Integrated Circuit (DevIC), pages 314–317. IEEE, 2019.
BiCAM array. Power delay Product of proposed BiCAM [18] Alekhya Yalla and Umakanta Nanda. Quasi fgmos 6t sram cell
array is improved by 98.6% using transmission gates in design: A strategy for low power applications. International Journal
reversible logic gates ensuring improved speed with low of Nanoscience, 2019.
[19] Debasish Nayak, Debiprasad Priyabrata Acharya, Prakash Kumar Rout,
power dissipation due to its reversibility. An overall decrease and Umakanta Nanda. A high stable 8T-SRAM with bit interleaving
in PDP for BiCAM cells is making it best suitable for high capability for minimization of soft error rate. Microelectronics Journal,
performance and low power applications. operation. 73:43–51, 2018.

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