BCR 35PN

NPN/PNP Silicon Digital Tansistor Array

• Switching circuit, inverter, interface circuit,

drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R1=10kΩ, R2=47kΩ)

Tape loading orientation

Type Marking Ordering Code Pin Configuration Package

BCR 35PN WUs Q62702-C2495 1=E1 2=B1 3=C2 4= E2 5=B2 6= C1 SOT-363

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 6
Input on Voltage Vi(on) 20
DC collector current IC 100 mA
Total power dissipation, TS = 115°C Ptot 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg - 65 ... + 150

Thermal Resistance
Junction ambient 1) RthJA ≤ 275 K/W
Junction - soldering point RthJS ≤ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 Nov-26-1996

 BCR 35PN

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 µA, IB = 0 50 - -
Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 6 V, IC = 0 - - 167
DC current gain hFE -
IC = 5 mA, VCE = 5 V 70 - -
Collector-emitter saturation voltage 1) VCEsat mV
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off) V
IC = 100 µA, VCE = 5 V 0.5 - 1
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 0.5 - 1.4
Input resistor R1 7 10 13 kΩ
Resistor ratio R1/R2 0.19 0.21 0.24 -
AC Characteristics for NPN Type
Transition frequency fT MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz - 150 -
Collector-base capacitance Ccb pF
VCB = 10 V, f = 1 MHz - 2 -
1) Pulse test: t < 300µs; D < 2%

Semiconductor Group 2 Nov-26-1996

 BCR 35PN

NPN TYPE
DC Current Gain hFE = f (IC) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration) VCEsat = f(IC), hFE = 20

10 3 10 2

-
hFE IC
mA

10 2

10 1

10 1

10 0 10 0
-1 0 1
10 10 10 mA 0.0 0.2 0.4 0.6 V 1.0
IC V CEsat

Input on Voltage Vi(on) = f(IC) Input off voltage Vi(off) = f(IC)

VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration)

10 2 10 1

mA
mA
IC IC
10 0

10 1

10 -1

10 0

10 -2

10 -1 10 -3
-1 0 1
10 10 10 V 0.0 0.5 1.0 V 2.0
V i(on) V i(off)

Semiconductor Group 3 Nov-26-1996

 BCR 35PN

PNP TYPE
DC Current Gain hFE = f (IC) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration) VCEsat = f(IC), hFE = 20

10 3 10 2

-
hFE IC
mA

10 2

10 1

10 1

10 0 10 0
-1 0 1
10 10 10 mA 0.0 0.2 0.4 0.6 V 1.0
IC V CEsat

Input on Voltage Vi(on) = f(IC) Input off voltage Vi(off) = f(IC)

VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration)

10 2 10 1

mA
mA
IC IC
10 0

10 1

10 -1

10 0

10 -2

10 -1 10 -3
-1 0 1
10 10 10 V 0.0 0.5 1.0 V 2.0
V i(on) V i(off)

Semiconductor Group 4 Nov-26-1996

 BCR 35PN

Total power dissipation Ptot = f (TA*;TS)

* Package mounted on epoxy

300

mW
Ptot
TS
TA
200

150

100

50

0
0 20 40 60 80 100 120 °C 150
TA ,TS

Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp)

10 3 10 3

K/W
-
RthJS Ptotmax/PtotDC
10 2

10 2 D=0
0.005
0.01
0.02
0.05
10 1 0.1
0.2
0.5 0.5
0.2
0.1
0.05 10 1
0.02
10 0 0.01
0.005
D=0

10 -1 10 0
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 s 10 10 10 10 10 10 10 s 10
tp tp

Semiconductor Group 5 Nov-26-1996