VSMA1085250

www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
size allows 1.5 A DC operation and supports pulsed currents
up to 5.0 A.
FEATURES
• Package type: surface-mount
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.9
• Centroid wavelength: λcentroid = 850 nm
• Angle of half intensity: ϕ = ± 28°
• Designed for high drive currents: up to 1.5 A (DC)
and up to 5 A (pulsed)
• Low thermal resistance: 6 K/W < RthJSP < 9 K/W
• ESD: up to 5 kV (according to ANSI / ESDA /
JEDEC® JS-001)
LINKS TO ADDITIONAL RESOURCES • Floor life: 168 h, MSL 3, according to J-STD-020
3D 3D • Lead (Pb)-free reflow soldering
3D Models
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMA1085250 is APPLICATIONS
an infrared, 850 nm emitting diode. It features a double • Driver and occupant monitoring
stack emitter chip for highest radiant power. The 42 mil chip

PRODUCT SUMMARY
COMPONENT Ie (mW/sr) at IF = 1.0 A ϕ (°) λp (nm) λcentroid (nm) tr (ns)
VSMA1085250 1350 ± 28 860 850 10

Note
• Test conditions see table “Basic Characteristics”

ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMA1085250 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens

Note
• MOQ: minimum order quantity

Rev. 1.2, 17-Nov-2021 1 Document Number: 80297

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V
Forward current IF 1.5 A
Surge forward current tp = 100 μs IFSM 5 A
Power dissipation PV 5.33 W
Junction temperature Tj 145 °C
Ambient temperature range Tamb -40 to +125 °C
Storage temperature range Tstg -40 to +125 °C
Soldering temperature According to Fig. 11, J-STD020E Tsd 260 °C
Thermal resistance junction to solder point real (1) JESD 51 RthJSP,real 6 to 9 K/W
Thermal resistance junction to ambient real JESD 51 RthJA,real 150 K/W
ESD sensitivity According to ANSI / ESDA / JEDEC JS-001 VESD 5 kV
Note
(1) Thermal resistance junction to solder point real has been measured with the part mounted on an ideal heatsink and the optical output power
has been deducted from the total electrical power dissipation

Axis Title Axis Title

6 10000 1.6 10000
RthJSP = 6 K/W
1.4
5
RthJSP = 6 K/W
PV - Power Dissipation (W)

IF - Forward Current (A)

1.2
4 1000 1000
1.0
2nd line

RthJSP = 9 K/W
2nd line

2nd line

2nd line
1st line

1st line
3 0.8
RthJSP = 9 K/W
0.6
2 100
0.4
1
0.2

0 10 0 10
0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140
TSP - Solder Point Temperature (°C) TSP - Solder Point Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Solder Point Temperature Fig. 2 - Forward Current Limit vs. Solder Point Temperature

Rev. 1.2, 17-Nov-2021 2 Document Number: 80297

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 0.35 A, tp = 10 ms VF 2.7 2.95 3.1 V
IF = 1 A, tp = 100 μs VF 2.8 3.1 3.3 V
Forward voltage
IF = 1.5 A, tp = 100 μs VF 2.9 3.25 3.55 V
IF = 5 A, tp = 100 μs VF 3.2 3.9 4.4 V
Temperature coefficient of VF IF = 1 A, tp = 200 μs - -2 - mV/K
Reverse current IR Not designed for reverse operation μA
IF = 0.35 A, tp = 10 ms Ie 400 500 600 mW/sr
IF = 1 A, tp = 100 μs Ie 1000 1350 1700 mW/sr
Radiant intensity
IF = 1.5 A, tp = 100 μs Ie 1400 1950 2500 mW/sr
IF = 5 A, tp = 100 μs Ie 4250 6000 7750 mW/sr
IF = 1 A, tp = 100 μs φe - 1425 - mW
Radiant power
IF = 1.5 A, tp = 100 μs φe - 2100 - mW
Temperature coefficient of φ IF = 1 A, tp = 200 μs TKφ - -0.15 - %/K
Angle of half intensity ϕ - ± 28 - °
Peak wavelength IF = 1 A, tp = 300 μs λp - 860 - nm
Centroid wavelength IF = 1 A, tp = 300 μs λcentroid - 850 - nm
Spectral bandwidth IF = 1 A, tp = 300 μs Δλ - 30 - nm
Temperature coefficient of λp IF = 100 mA, tp = 20 ms TKλp - 0.25 - nm/K
Rise time IF = 1 A tr - 10 - ns
Fall time IF = 1 A tf - 15 - ns

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Axis Title Axis Title
10 10000 115 10000
tp = 100 μs IF = 1 A,
VF, rel. - Relative Forward Voltage (%)

tp = 200 μs
110
IF - Forward Current (A)

1 1000 1000
105
2nd line

2nd line
1st line

1st line
2nd line

2nd line

100
0.1 100 100

95

0.01 10 90 10
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 -60 -40 -20 0 20 40 60 80 100 120 140
VF - Forward Voltage (V) Tamb - Ambient Temperature (°C)

Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature

Rev. 1.2, 17-Nov-2021 3 Document Number: 80297

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Axis Title Axis0°

Title 10° 20°
10 10000 10000
30°
tp = 100 μs

Ie, rel. - Relative Radiant Intensity

Ie,rel - Relative Radiant Intensity

φ - Angular Displacement
1 1000 1000
40°
1.0
(Ie / Ie(1.0 A))

2nd line
1st line

2nd line
2nd line
2nd line

0.9
50°
0.8
0.1 100 100
60°

0.7 70°

80°
0.01 10 10
0.01 0.1 1 10 0.6 0.4 0.2 0
IF - Forward Current (A) 1st line

Fig. 5 - Relative Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

Axis Title Axis Title

110 10000 6 10000
IF max. - Max. Allowed Forward Current (A)
IF = 1 A, DC = 1
tp = 200 μs DC = 0.5
ϕe, rel. - Relative Radiant Power (%)

105 5 DC = 0.2
DC = 0.1
DC = 0.05
4 DC = 0.02 1000
100 1000 DC = 0.01

2nd line
2nd line

1st line
2nd line

1st line

2nd line

95 3

90 100 2 100

85 1
Tamb = 25 °C, RthJSP,real = 9 K/W
80 10 0 10
-60 -40 -20 0 20 40 60 80 100 120 140 10-6 10-5 10-4 10-3 10-2 10-1 1 101
Tamb - Ambient Temperature (°C) tp - Pulse Duration (s)

Fig. 6 - Relative Radiant Power vs. Ambient Temperature Fig. 9 - Max. Allowed Forward Current vs. Pulse Duration

Axis Title Axis Title

100 10000 6 10000
IF max. - Max. Allowed Forward Current (A)

DC = 1
90 DC = 0.5
Ie, rel. - Relative Radiant Intensity (%)

IF = 1.0 A, tp = 300 μs 5 DC = 0.2

80 DC = 0.1
DC = 0.05
70 4 DC = 0.02
1000 DC = 0.01 1000
60
2nd line
1st line
2nd line
1st line

2nd line
2nd line

50 3

40
100 2 100
30
20
1
10 Tamb = 85 °C, RthJSP,real = 9 K/W
0 10 0 10
700 750 800 850 900 950 10-6 10-5 10-4 10-3 10-2 10-1 1 101
λ - Wavelength (nm) tp - Pulse Duration (s)

Fig. 7 - Relative Radiant Intensity vs. Wavelength Fig. 10 - Max. Allowed Forward Current vs. Pulse Duration

Rev. 1.2, 17-Nov-2021 4 Document Number: 80297

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
TAPING DIMENSIONS in millimeters

Reel design is representative for different types

Unreel direction

Z
Ø
33
0
Ø
62 2 E
(E mp
m
pt ty l
y e
tra ad
ile er
r 2 40
00 0 m
m m
m m
m in
in .
.)
Ø
13

A A-A
Ø 1.55
0.3
Label posted Ø 1.55
here .4
12
.4
18
Z

2
Cathode

4
8

A 5.5 1.75 3.196

Drawing-No.: 9.800-5150.01-4
Issue: 1; 09.07.2021 12

Notes
• Empty component pockets sealed with top cover tape
• 7 inch reel - 600 pieces per reel
• The maximum number of consecutive missing lamps is two
• In accordance with ANSI / EIA 481-1-A-1994 specifications

Rev. 1.2, 17-Nov-2021 5 Document Number: 80297

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VSMA1085250
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PACKAGE DIMENSIONS in millimeters
3.4 2.895

Cathode marking 1
Anode Cathode

A
BC

10°

2.7
3.4

LM
CX

Die

0.35 0.5
ESD die 3.05 Exposed copper
1

Not indicated tolerances ± 0.1

Technical drawings
according to DIN
specification

Drawing-No.: 6.550-5366.01-4
Issue: 1; 09.07.2021

Notes
• Tolerance is ± 0.10 mm (0.004") unless otherwise noted
• Specifications are subject to change without notice

Rev. 1.2, 17-Nov-2021 6 Document Number: 80297

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VSMA1085250
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Vishay Semiconductors
RECOMMENDED FOOTPRINT
5.5
3.5

0.55
5.5

2.8

0.4

0.9
2.6
1

2.8 1 2.8 2.6

Cu area Solder resist Solder stencil

Cathode marking Drawing-No.: 6.550-5366.9-3

Component location on pad Issue: 1; 09.07.2021

SOLDER PROFILE DRYPACK

Axis Title Devices are packed in moisture barrier bags (MBB) to
300 10000 prevent the products from moisture absorption during
Max. 260 °C transportation and storage. Each bag contains a desiccant.
250 255 °C
245 °C
240 °C
217 °C FLOOR LIFE
Temperature (°C)

200 1000
Floor life (time between soldering and removing from MBB)
Max. 30 s
2nd line
2nd line

1st line

must not exceed the time indicated on MBB label:

150
Floor life: 168 h
Max. 120 s Max. 100 s
100 100 Conditions: Tamb < 30 °C, RH < 60 %
Max. ramp down 6 °C/s
Moisture sensitivity level 3, according to J-STD-020B
50 Max. ramp up 3 °C/s

Max. 2 cycles allowed DRYING

0 10
0 50 100 150 200 250 300
In case of moisture absorption devices should be baked
Time (s)
before soldering. Conditions see J-STD-033D or label.
23192
Devices taped on reel dry using recommended conditions
Fig. 11 - Lead (Pb)-free (Sn) Infrared Reflow Solder Profile 192 h at 40 °C (+ 5 °C), RH < 5 %.
According to J-STD020E for Surface-Mount Components

Rev. 1.2, 17-Nov-2021 7 Document Number: 80297

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021 1 Document Number: 91000