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Product
SP8009E
S a mHop Microelectronics C orp. Ver 1.5

N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY FEATURES

Super high dense cell design for low R DS(ON).
V DSS ID R DS(ON) (m Ω) Typ
Rugged and reliable.
5.0 @ VGS=10V
33V 24A
Suface Mount Package.
6.5 @ VGS=6V ESD Protected.

D 5 4 G

D 6 3 S

D 7 2 S
P in 1
D 8 1 S
TSON 3.3 x 3.3

ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

Symbol Parameter Limit Units
VDS Drain-Source Voltage 33 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous TA=25°C 24 A
IDM a
-Pulsed 72 A
PD Maximum Power Dissipation TA=25°C 1.67 W
Operating Junction and Storage
TJ, TSTG -55 to 150 °C
Temperature Range

THERMAL CHARACTERISTICS
R JA Thermal Resistance, Junction-to-Ambient 75 °C/W

Details are subject to change without notice. Oct,22,2013

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SP8009E
Ver 1.5

ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS
BVDSS VGS=0V , ID=10mA 33 V
Drain-Source Breakdown Voltage
BVDSX VGS=-20V , ID=10mA 10 V
IDSS Zero Gate Voltage Drain Current VDS=33V , VGS=0V 10 uA
IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ±10 uA

ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS=VGS , ID=0.2mA 1 1.6 3 V
VGS=10V , ID=12A 5.0 6.5 m ohm
RDS(ON) Drain-Source On-State Resistance
VGS=6V , ID=12A 6.5 9.0 m ohm
b
DYNAMIC CHARACTERISTICS
CISS Input Capacitance 1670 pF
VDS=10V,VGS=0V
COSS Output Capacitance 362 pF
f=1.0MHz
CRSS Reverse Transfer Capacitance 333 pF
b
SWITCHING CHARACTERISTICS
tD(ON) Turn-On Delay Time 29 ns
VDD=15V
tr Rise Time ID=12A 35 ns
tD(OFF) Turn-Off Delay Time VGS=10V 68 ns
RGEN= 4.7 ohm
tf Fall Time 17 ns
Qg Total Gate Charge VDS=24V,ID=12A,VGS=10V 29 nC
Qgs Gate-Source Charge VDS=24V,ID=12A, 7 nC
Qgd Gate-Drain Charge VGS=10V 8 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD Diode Forward Voltage VGS=0V,IS=24A 0.87 1.3 V

Notes
_ 300us, Duty Cycle <
a.Pulse Test:Pulse Width < _ 2%.
b.Guaranteed by design, not subject to production testing.

Oct,22,2013

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SP8009E
Ver 1.5

ID - VDS ID - VDS
20 50
10 3.7 10 4.0 3.6
3.5 3.1 3.8
4
3.4 5.0 3.7 3.5
16 40
Drain Current ID (A)

Drain Current ID (A)

3.3 3.0
3.4

12 30 3.3
2.9
3.2
2.8
8 20 3.1
2.7 3.0
2.9
4 2.6 10 2.8
V GS =2.5V V GS =2.7V

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.4 0.8 1.2 1.6 2.0

Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

ID - VGS VDS - VGS

30 0.5
(V)
Drain Current ID (A)

24 0.4
Drain-Source Voltage VDS

18 0.3
Tj=100 C

12 -55 C 0.2
ID=24A
25 C
6 0.1 12A

6A
0 0
0 1 2 3 4 5 0 2 4 6 8 10

Gate-Source Voltage VGS (V) Gate-Source Voltage VGS (V)

RDS(ON) - ID RDS(ON) - Ta
100 12
Drain-source ON resistance
Drain-source on-resistance

10
ID = 6, 12, 24A
RDS(on) (m Ω)
RDS(ON) (mΩ)

10 6 VGS=6V
VGS=6V
ID = 6, 12, 24A
4
VGS=10V
VGS=10V
2

1 0
0.1 1 10 100 -80 -40 0 40 80 120 160

Drain Current ID (A) Ambient temperature Ta (°C )

Oct,22,2013

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SP8009E
Ver 1.5

IDR VDS Capacitance VDS

100 10000
Drain reverse current IDR (A)

10

Capacitance C (pF)
4.5
3
10 Ciss

1000
1 VGS=0V
1
Coss

Crss

0.1 100
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0.1 1 10 100

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

Vth Ta Dynamic input/output characteristics

2.5 50 15
Gate threshold voltage Vth (V)

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

ID=24A
2.0 40 12

6 9
1.5 30 12
VDD=24V

1.0 20 VDD=24V 6
12
0.5 VDS=VGS 10 3
6
ID=0.2mA
0 0 0
-80 -40 0 40 80 120 160 0 4 8 12 16 20 24 28 32
Ambient temperature Ta (°C )
Total gate charge Qg (nC)

PD Ta
2.5
Drain power dissipation PD (W)

2.0

1.5

1.0

0.5

0
0 40 80 120 160

Ambient temperature Ta (°C )

Oct,22,2013

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SP8009E
Ver 1.5

rth - tw
1000
Transient thermal impedance

Mounted on FR-4 board

100
rth (°C/W)

10

Single Pulse
0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

100 t
imi
)L t=1
S(
ON 00
Drain current ID (A)

RD us
t=1
ms
10
t=1
0m
s
t=1
s
1 DC

VGS=10V
0.1 Single Pulse
TA=25 C
0.1 1 10

Drain-source voltage VDS (V)

Oct,22,2013

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SP8009E
Ver 1.5

PACKAGE OUTLINE DIMENSIONS

TSON 3.3 x 3.3
A

C E2

M D2
D D1

D3
L1

L
b
e
PIN 1
0

E1
E

MILLIMETERS
SYMBOLS
MIN. NOM. MAX.
A 0.70 0.75 0.80
b 0.25 0.30 0.35
C 0.10 0.15 0.25
D 3.25 3.35 3.45
D1 3.00 3.10 3.20
D2 1.78 1.88 1.98
D3 0.13
E 3.20 3.30 3.40
E1 3.00 3.15 3.20
E2 2.39 2.49 2.59
e 0.65 BSC
H 0.30 0.39 0.50
L 0.30 0.40 0.50
L1 0.13
M 0.15
0 10o 12o

Oct,22,2013

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SP8009E
Ver 1.5

TSON 3.3 x 3.3 Tape and Reel Data

TSON 3.3 x 3.3 Tape
P2 P1
D1 B
E1

E2
E

A A
T

P D B

H1
H

K SECTION A-A

SECTION B-B
FEEDING DIRECTION
unit : mm
PACKAGE D D1 E E1 E2 H H1 K P P1 P2 T
ӿ1.50 12.0
ӿ1.50 1.75 5.50 3.70 3.70 1.10 8.0 4.0 2.0 0.3
TSON 3.3 x 3.3 (MIN) +0.10 +0.30 ²0.10 ²0.05 ²0.10 ²0.10 ²0.10 ²0.10 ²0.10 ²0.05 ²0.05
- 0.00 - 0.10

TSON 3.3 x 3.3 Reel

W1

B
N
A C

W2
UNIT:р

TAPE SIZE REEL SIZE A B C D N W1 W2

12 р 13 " + 0.5 + 0.5 + 0.0 + 2.0

330 ²!1.0 1.5 - 0.2 ӿ13.0 - 0.2 20.2(ref.) 178 - 2.0 12.4 18.4(ref.)
- 0.0

Oct,22,2013

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SP8009E
Ver 1.5

TOP MARKING DEFINITION

TSON 3.3 x 3.3

8009E Product No.

XXXXXX
Pin 1

SMC internal Code No.

Wafer Lot No.

Production Date (1,2 ~ 9, A,B.....)

Production Month (1,2 ~ 9, A,B,C)

Production Year (2009 = 9, 2010 = A.....)

Oct,22,2013

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