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2MBI200VB-120-50 IGBT Modules

IGBT MODULE (V series)

1200V / 200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous TC =100°C 200
IC pulse 1ms 400
Collector current
-IC 200
-IC pulse 1ms 400
Collector power dissipation PC 1 device 1500 W
Junction temperature Tj 175
Operating junction temperature (under switching conditions) Tjop 150
°C
Case temperature TC 125
Storage temperature Tstg -40 ~ 125
Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VAC
Mounting (*2) - 3.5
Screw torque Nm
Terminals (*3) - 3.5
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 2.5-3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 2.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 400 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 200mA 6.0 6.5 7.0 V
Tj =25°C - 1.95 2.40
VCE (sat) VGE = 15V
Tj =125°C - 2.25 -
(terminal) IC = 200A
Tj =150°C 2.30
Collector-Emitter saturation voltage V
Tj =25°C - 1.75 2.20
VCE (sat) VGE = 15V
Tj =125°C - 2.05 -
(chip) IC = 200A
Tj =150°C 2.1
Internal gate resistance RG (int) - - 3.8 - Ω
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 18.2 - nF
ton VCC = 600V - 600 -
Turn-on time tr IC = 200A - 200 -
tr (i) VGE = ±15V - 50 - nsec
toff RG = 2.7Ω - 800 -
Turn-off time Tj = 150°C
tf - 80 -
Tj =25°C - 1.85 2.30
VF VGE = 0V
Tj =125°C - 2.00 -
(terminal) IF = 200A
Tj =150°C 1.95
Forward on voltage V
Tj =25°C - 1.70 2.15
VF VGE = 0V
Tj =125°C - 1.85 -
(chip) IF = 200A
Tj =150°C 1.80
Reverse recovery time trr IF = 200A - 150 - nsec
Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
IGBT - - 0.100
Thermal resistance (1device) Rth(j-c)
FWD - - 0.160 °C/W
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.025 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
500 500

VGE=20V 15V 12V VGE= 20V 15V

400 400
12V

Collector current: IC [A]

Collector current: IC [A]

300 300

10V
200 200 10V

100 100 8V
8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage
VGE= 15V / chip Tj= 25°C / chip
500 10

Tj=25°C 125°C 150°C

Collector-Emitter Voltage: VCE [V]

400 8
Collector Current: IC [A]

300 6

200 4

IC=400A
100 2
IC=200A
IC=100A

0 0
0 1 2 3 4 5 10 15 20 25
Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V]

Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.)

VGE= 0V, ƒ= 1MHz, Tj= 25°C VCC=600V, IC=200A, Tj= 25°C
100 20 800

15 600
Gate Capacitance: Cies, Coes, Cres [nF]

Collector-Emitter voltage: VCE [V]

Cies VCE
Gate-Emitter voltage: VGE [V]

10 400
10
5 200
***

0 0
Cres
-5 VGE -200
1
Coes
-10 -400

-15 -600
0.1
-20 -800
0 10 20 30
-2 -1 0 1 2
Collector-Emitter voltage: VCE [V]
Gate charge: Qg [ μC]

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Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C VCC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C
10000 10000
Switching time: ton, tr, toff, tf [nsec]

Switching time: ton, tr, toff, tf [nsec]

1000 toff 1000 toff
ton ton

tr tr

100 100
tf tf

10 10
0 100 200 300 400 500 0 100 200 300 400 500

Collector current: IC [A] Collector current: IC [A]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
VCC=600V, IC=200A, VGE=±15V, Tj=125°C VCC=600, VGE=±15V, RG=2.7Ω, Tj=125, 150°C
10000 60
Tj=125°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]

Tj=150°C
toff Eoff
1000 ton
40
tr Eon

100 20
tf Err

10 0
1 10 100 0 100 200 300 400 500

Gate resistance: RG [Ω] Collector current: IC [A]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
VCC=600V, IC=200A, VGE=±15V, Tj=125, 150°C +VGE=15V, -VGE=15V, RG=2.7Ω, Tj=150°C
70 500
Tj=125°C
Eon
Switching loss: Eon, Eoff, Err [mJ/pulse]

60 Tj=150°C
400
Collector current: IC [A]

50

40 300

30 Eoff
200

20
100
10
Err
0 0
1 10 100 0 400 800 1200 1600
Gate resistance: RG [Ω] Collector-Emitter voltage: VCE [V]
(Main terminals)

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Forward Current vs. Forward Voltage (typ.) Reverse Recovery Characteristics (typ.)
chip VCC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C
500 1000

Reverse recovery time: trr [nsec]

Reverse recovery current: Irr [A]
400
Irr
Forward current: IF [A]

300 Tj=25°C trr

100
200
125°C
100 150°C

0 10
0 1 2 3 0 100 200 300 400 500
Forward on voltage: VF [V] Forward current: IF [A]

Reverse Recovery Characteristics (typ.)

Transient Thermal Resistance (max.)
VCC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C
1000 1
***
Reverse recovery time: trr [nsec]
Reverse recovery current: Irr [A]

FWD
Thermal resistanse: Rth(j-c) [°C/W]

Irr
0.1
trr
IGBT
100

0.01

τ(i) [sec] 0.001 0.019 0.050 0.063

Rth(i) IGBT 0.00940 0.02235 0.03855 0.02991
10 0.001
[°C/W] FWD 0.01504 0.03576 0.06168 0.04786

0 100 200 300 400 500 0.001 0.01 0.1 1

Forward current: IF [A] Pulse Width : Pw [sec]

FWD safe operating area (max.)

Tj=150°C
500
Reverse recovery current: Irr [A]

400
Pmax=240kW

300

200

100

0
0 500 1000 1500
Collector-Emitter voltage: VCE [V]
(Main terminals)

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Outline Drawings, mm

Equivalent Circuit Schematic

C1

G1
E1
C2E1

G2
E2

E2

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1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

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