a= ® ISC INCHANGE Semiconductor isc Silicon PNP Power Transistor KTA1042D DESCRIPTION + Low Collector-Emitter saturation voltage + 100% avalanche tested * Minimum Lot-to-Lot variations for robust device performance and reliable operation DPAK ‘3 Emitter 0.252 Package APPLICATIONS ee + General purpose applications Pt cos + 7 “The c ABSOLUTE MAXIMUM RATINGS(Ts=25°C) t erMeo. PARAMETER vawwe | unr | | | > Vea | Collector-Base Voltage 100 | Vv l 8 Vezo | Collactor-Emiter Voltage 100 | v Veoo | Emitler-Base Voltage 5 v. 2 | Collector Current-Gontinuous 5 A Total Power Dissipation po | Sinese 125 | w Thermal Resistance.Junction to ' Rois | Areoee too | cw 1, | Junetion Temperature 19 | © Tug | Storage Temperature Range 85-150] isc website: www.iscsemi.com 1 registered trademarkINCHANGE Semiconductor isc Silicon PNP Power Transistor KTA1042D ELECTRICAL CHARACTERISTICS Tc=25(C unless otherwise specified SYMBOL PARAMETER CONDITIONS, min | tye | max | uNiT Collector-Emitter Breakdown Voltage 0m 100 v Collector-Base Breakdown Voltage Am; lee 0 | 100 v T Emiter-Base Breakdown Voltage 4 v Collector-Emitter Saturation Voltage 20 | v Base-Emitter vollage a8 | Vv Collector Cutoff Current -100 | ua les | Emitter Cutoff Current 1 | ma DC Current Gein 1A; Vee 70 240 hee | DC Current Gel 4A; Voes SV 20 f | Current-Gain—Bandvidth Product 1A; Voc= SV 30 MHz Output Capacitance Fe sc Some 270 oF ule test hee; Classifications ° Y 70-140 | 120-240 Isc website: www.iscsemi.com. 2 Isc & iscsem/ is registered trademark