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Pt/(InGa)2O3/n‑Si Heterojunction-Based Solar-Blind Ultraviolet

Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280
nm
Zhao Wang, Wei Zheng,* Qichang Hu,* Shiyan Lin, Yibing Wu, and Dapeng Ye

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ABSTRACT: Ga2O3 is a popular material for research on solar-blind ultraviolet

detectors. However, its absorption cutoff edge is 253 nm, which is not an ideal
cutoff edge of 280 nm. In this work, by adjusting the ratio of In/Ga elements in
the films, a high-quality (In0.11Ga0.89)2O3 film with an absorption cutoff edge of
280 nm was obtained, which owns a uniform surface and preferred orientation.
On this basis, a solar-blind ultraviolet photovoltaic detector was constructed
based on the Pt/(In0.11Ga0.89)2O3/n-Si heterojunction. When the device is
exposed to 254 nm UV light, its open-circuit voltage (VOC) can reach 354 mV.
Under 0 V bias, the device has a responsivity of 0.48 mA/W with a rise time of
0.47 s and a decay time of 0.37 s; under −7 V bias, the device achieves a
responsivity of 16.96 mA/W with a rise time of 0.17 s and a decay time of 0.33 s.
The spectral response characteristics of the device show that it has a selective
response to solar-blind ultraviolet light (cutoff wavelength is 280 nm) with a
rejection ratio (R254 nm/R310 nm), which is greater by more than two orders of magnitude. This work provides a good reference for
adjusting the band gap of Ga2O3-based films and broadening their application fields.
KEYWORDS: photovoltaic photodetector, solar-blind ultraviolet, (InxGa1−x)2O3, band gap adjustment, 280 nm

■ INTRODUCTION
Solar-blind ultraviolet light usually refers to the solar radiation
with a wavelength of 200−280 nm. In this band, solar radiation
is almost completely absorbed by ozone in the stratosphere
before it reaches the surface of the earth, which means there
will be an extremely low background interference for the
detection of solar-blind ultraviolet signals.1−4 Based on this
advantage, solar-blind ultraviolet detectors have been chosen
for a wide range of applications in civil and military fields, such
as corona discharge detection in power systems, biological and
chemical detection, space communication, missile early
warning, etc.5−9
Compared with traditional photomultiplier tubes, wide-gap
semiconductor solar-blind ultraviolet detectors with the
advantages of concentrated spectral response, low working
voltage, high stability, and small size have attracted the
attention of researchers in recent years.10−14 Among the
common semiconductor solar-blind response materials, Ga2O3
takes a superior place because of high carrier mobility, strong
breakdown field, and stable physical and chemical proper-
ties,15,16 which makes it a popular material for solar-blind UV
detectors. However, the band gap of Ga2O3 is too large (Eg =
4.9 eV), and its absorption cutoff wavelength is only 253 nm,
which cannot cover the entire solar-blind area.17 As a result,
detectors with Ga2O3 as the response layer cannot achieve the
best detection efficiency when detecting solar-blind signals in
practice.18 To realize the highest efficiency achieved by the
detector without interference from the background signal, it is
imperative to find a photosensitive material with an absorption
cutoff edge of 280 nm (band gap of 4.42 eV) exactly.
In2O3 is also a wide direct band gap semiconductor material
with excellent optical properties. Its band gap is about 3.5 eV,
which is narrower than that of Ga2O3.19−22 Indium (In) and
gallium (Ga) stay in adjacent periods of the same main group;
they have similar atomic radius and In2O3 and Ga2O3 share
similar physical and chemical properties. Therefore, theoret-
ically speaking, it is feasible to realize the band gap control of
Ga2O3 by doping In and then obtain the high-quality
(InxGa1−x)2O3 (here x represents the ratio of the total number
of In atoms to the total number of In and Ga atoms in the
work) alloy film with a band gap of 4.42 eV. In addition, the
performance of detectors is also greatly affected by the detector
Received: July 9, 2021

© XXXX American Chemical Society https://doi.org/10.1021/acsami.1c13006

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Figure 1. Fabrication process and characterization results of the (In0.11Ga0.89)2O3 film. (a) Use of magnetron sputtering equipment to prepare an
(InxGa1−x)2O3 film on the surface of the substrate. (b) Grazing incidence XRD (X-ray angle is 1°) of the (In0.11Ga0.89)2O3 film shows that the
orientation of this film is (4̅02). (c) Cross-sectional SEM image of the film, which shows that the thickness of this (In0.11Ga0.89)2O3 film is 130 nm.
The inset is the AFM image and SEM image of the film surface, indicating that the film is uniform and flat. (d) Distribution diagram of each
element in the (In0.11Ga0.89)2O3 film, showing that the distribution is uniform and dense. (e) XPS image of the (In0.11Ga0.89)2O3 film. The result
shows that the In element in this film accounts for 11% (atom %) of the two elements In and Ga.

structure. For the most common photoconductive detectors,

the nonequilibrium majority carriers have a long relaxation
time, which has a great impact on the performance by causing
problems like slow response speed and poor frequency
response.23 In contrast, for photovoltaic detectors that depend
on the drift of minority carriers, they have a much shorter
relaxation time and thus become more advantageous in terms
of the response speed and frequency response.24 We have
conducted relevant research in our previous works.25−28
Therefore, constructing a photovoltaic structure is also an
important way to improve the performance of detectors.
Based on the above knowledge, we prepared (InxGa1−x)2O3
films via magnetron sputtering. By adjusting growth parameters
to control the ratio of In/Ga elements, a uniform and preferred
oriented (In0.11Ga0.89)2O3 film with a cutoff edge of 280 nm
was obtained for the first time, on which a photovoltaic solar-
blind ultraviolet detector with excellent rectification character-
istics of Pt/(In0.11Ga0.89)2O3/n-Si heterojunction was con-
structed. When the device is exposed to 254 nm light, its open-
circuit voltage can reach 354 mV. Under 0 V bias, this device
can realize a responsivity of 0.48 mA/W with a rise time of
0.47 s and a decay time of 0.37 s; under −7 V bias, this device
shows a responsivity of 16.96 mA/W with a rise time of 0.17 s
and a decay time of 0.33 s. The spectral selective response of
this device is in line with the absorption characteristics of the
photoresponse layer, and the rejection ratio (R254 nm/R310 nm) is
greater by more than two orders of magnitude. At the end of
this research, the working mechanism of this detector was
analyzed in detail. The whole work can be an important
guiding reference for the band gap adjustment and device
applications of (InxGa1−x)2O3 films.
■ EXPERIMENTAL SECTION
(InxGa1−x)2O3 Film Preparation. The n-Si substrate (10 mm ×
10 mm) is washed sequentially with acetone, alcohol, and deionized
water for 15 min to obtain a clean surface in an ultrasonic cleaning
device. After the moisture on the surface of the substrate was removed
by drying, (InxGa1−x)2O3 films were grown there through magnetron
sputtering. The growth parameters are as follows: the targets are the
In2O3 target and the Ga2O3 target (99.999%, wt %); the flow rate of
sputtering gas (Ar) is 30 sccm; the pressure in the sputtering chamber
is maintained at 2 Pa; the temperature of the substrate is maintained
at 500 °C; the rotating speed is 30 rpm, and the sputtering time is 0.5
h. During the film preparation process, the sputtering power of
different targets is controlled to prepare (InxGa1−x)2O3 films with
different doping ratios.
Photodetector Fabrication. After obtaining the optimal ratio of
this (InxGa1−x)2O3 film, a circular hole electrode with a diameter of
0.5 mm and a thickness of about 10 nm is sputtered on its surface.
The In electrode is made by spot welding on the n-Si surface to
complete the photodetector.
Characterizations and Measurements. An X-ray diffractometer
(XRD, Bruker D8 advance) is used to test the crystalline quality of
(InxGa1−x)2O3 films. X-ray photoelectron spectroscopy (XPS,
ThermoFisher Scientific ESCALAB250) is used to determine the
film elements. The field emission scanning electron microscope (FE-
SEM, ThermoFisher Scientific Verios G4 UC) and atomic force
microscope (AFM, Agilent 5500) are also used to characterize the
morphology of the film. An energy-dispersive X-ray spectrometer
(EDS, EDAX) is used to test the elemental distribution of the film.
The transmittance and absorption spectra of each (InxGa1−x)2O3 film
grown on c-sapphire are tested by a UV−vis spectrophotometer
(Shimadzu UV-2600). Regarding the electrical characteristics of the
fabricated device, an electrochemical workstation (Zahner Zennium
pro) is applied to test its continuous open-circuit voltage. The
photoelectric performance test of the device is obtained through a
source meter (Keithley 2612B). In the whole process of device

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Figure 2. Optical properties and band gap of the (InxGa1−x)2O3 films. (a) Absorption curve of the (InxGa1−x)2O3 film with x = 0.11. The inset
shows its band gap. (b) Transmittance curves of (InxGa1−x)2O3 films with different x values. (c) Band gaps Different x values correspond to
different band gaps of (InxGa1−x)2O3 films, which proves that adjusting the ratio of elements can change the band gap of (InxGa1−x)2O3 films. (d)
Trend of band gap with In content. As the In content increases, the band gap of the film becomes smaller. The fitting result is Eg = 4.75−0.0314 ×
x, where x represents the content of In and Eg represents the band gap.

performance testing, all light sources used are monochromatic light is uniform and flat. Figure 1d shows the elemental distribution
sources (254, 310, 365, 404, 467, 532, 663 nm). of the film over a large area. It can be seen from the figure that

■ RESULTS AND DISCUSSION

Figure 1a shows the process of growing an (InxGa1−x)2O3 film
on the surface of the substrate by magnetron sputtering. By
changing the sputtering power of different targets while
keeping other growth conditions consistent, the ratio of the
In element to Ga element in the grown (InxGa1−x)2O3 film is
indirectly changed. A series of characterizations of the
(InxGa1−x)2O3 film with x = 0.11 are performed. First, we
tested the grazing incidence XRD (X-ray angle is 1°) of the
film, as shown in Figure 1b. Since the test method adopted is
grazing incidence, there is no obvious substrate signal caught in
the result with a diffraction peak observed. This peak
corresponds to Ga2O3(4̅02) with a monoclinic structure,29,30
indicating that the film has good crystallinity, which is not
owned by the two films mentioned later. To observe the
thickness and surface morphology of the film, we used SEM
and AFM to characterize it. Figure 1c shows the cross section
of the film measured by SEM, from which it can be seen that
the thickness of this (In0.11Ga0.89)2O3 film is 130 nm. A film
with this thickness can fully absorb incident light without
affecting the transport of carriers. The inset of Figure 1c shows
the film surface image obtained by AFM and the surface
morphology obtained by SEM. Through calculation, the root
mean square of the film roughness measured by AFM is about
1.3 nm; the SEM result shows that there are no obvious
protrusions and depressions on the film surface over a large
scale. Both insets show that the (In0.11Ga0.89)2O3 film prepared
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the film is composed of three elements, In, Ga, and O, and the
distribution of each element is uniform and dense. Figure 1e
shows the XPS spectrum of the film. The result obtained here
verifies the elemental composition of the film in Figure 1d and
quantifies the In element in this film as 11% (atom %) of the
total of both In and Ga elements.
Figure 2a shows the absorption spectrum of the
(InxGa1−x)2O3 film with x = 0.11. It has a cutoff edge of 280
nm, which accurately covers the range of solar-blind ultraviolet
light. Based on the relationship between absorption value and
band gap,31 the function curve of (αhν)2 with respect to hν is
shown in the inset of Figure 2a, and the band gap of this film is
calculated to be 4.42 eV. Figure 2b shows the transmittance
spectra of three (InxGa1−x)2O3 films with different x values
(0.32, 0.25, 0.11), from which it can be observed that as the
value of x increases, the cutoff edge of the prepared
(InxGa1−x)2O3 film is red-shifted. Figure 2c shows the different
band gaps of these three samples, which are 3.74, 3.98, and
4.42 eV. The obtained results mean that the band gap of
(InxGa1−x)2O3 films can be adjusted by controlling the ratio of
elements, and thus achieving an (In0.11Ga0.89)2O3 film with a
band gap of 4.42 eV can be possible. Figure 2d shows the
relationship between the band gap and In content (atom %).
According to this figure, the higher the In content, the smaller
the band gap of the prepared (InxGa1−x)2O3 film, which is in
line with the variation relation between In content and the
band gap of (InxGa1−x)2O3 films displayed in other literature
studies.32,33
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Figure 3. (a) Structural model of the device. (b) Transmittance of the Pt electrode. (c) Dark current (Idark) curve of the detector. It can be seen
that the device has a good rectification characteristic, and the dark current is extremely low when the voltage is negatively biased. The inset shows
the circuit diagram during the test. (d) Contact characteristics of the In electrode and n-Si substrate. It can be seen that a quasi-ohmic contact is
formed between In and n-Si, which does not affect the electrical test on the device.

After characterizing the (InxGa1−x)2O3 films, we fabricated a
solar-blind ultraviolet detector based on the (In0.11Ga0.89)2O3/
n-Si structure. Figure 3a shows a schematic diagram of the
device structure, of which the surface of (In0.11Ga0.89)2O3 is the
Pt electrode, and the In electrode is welded to the n-Si
substrate. Figure 3b shows the transmittance of the Pt
electrode, indicating that the electrode can pass solar-blind
ultraviolet signals. Figure 3c shows the schematic diagram of
this device when it is tested. After the probe is tied on the
surface of the Pt and In electrodes, respectively, the dark
current curve shown in Figure 3c is measured through the
source meter. It can be seen that when the device is under a
forward bias, the current increases significantly with the
increase of bias, but when the device is under a negative bias,
there is no significant increase in current with bias change. This
phenomenon displays the excellent rectification characteristics
owned by this device, which is also the basis of photovoltaic
detectors. To test the electrical characteristics accurately, we
first tested the contact characteristics between the In electrode
and n-Si substrate. It can be seen from Figure 3d that when the
bias is −7 V, the current of the In−Si−In structure is 1.04 mA,
which is much larger than the dark current of this device,
indicating that the contact between In and Si is good without
affecting the electrical test of the device. What is more, it also
proves that the main reason for the small dark current is the
Pt/(In0.11Ga0.89)2O3/n-Si structure that we constructed.
On this basis, we first tested the photoelectric response
characteristics of this detector. By irradiating the device with
254 nm ultraviolet light of different power densities (8.67
mW/cm2, 1.91 mW/cm2, 104 μW/cm2), the corresponding
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photocurrent curve (I−V curve) was measured and obtained.
As shown in Figure 4a, by comparing these three curves with
the dark current curve, it can be found that there is a significant
response when the device is operated under both unbiased and
negative bias conditions. For example, under the illumination
with a power density of 8.67 mW/cm2, the photocurrent of this
device under 0 V bias reaches 1.34 nA, which indicates a
photovoltaic effect displayed by this device; under −7 V bias,
the photocurrent reaches 69.32 nA. In addition, the photo-
current increases gradually as the power density of the incident
light increases. The inset in Figure 4a exhibits a local
enlargement of these four curves. The plot shows that the
detector generates an open-circuit voltage under 254 nm light
illumination, which proves the existence of a built-in electric
field inside this device. The magnitude of the open-circuit
voltage increases with the increase of light power density. For
instance, under the illumination of 8.67 mW/cm2, the open-
circuit voltage can reach 354 mV. The relationship between the
light power density of the incident light and the open-circuit
voltage of the device is shown in Figure 4b. It can be seen that
under the illumination of 8.67 mW/cm2, the electromotive
force generated by the device is close to saturation, but there is
still some room for further increase. Figure 4c shows the open-
circuit voltage of the device in a period of time, which shows
there is no obvious open-circuit voltage in the dark state, while
under 254 nm light, the device produces a continuous and
relatively stable open-circuit voltage, indicating a stable
operating performance of this device. To analyze the response
characteristics of the detector, the responsivity (R) of the
device to light is calculated by the formula
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Figure 4. Response characteristics of the detector to 254 nm light. (a) I−V curve of the device in dark state and I−V curves under light irradiation
with different light power densities. It can be seen that the device responds to light with different light power densities. The inset is a partial
enlargement of the I−V curve, indicating that the device has an open-circuit voltage under 254 nm light. (b) Influence of light power density of
incident light on the open-circuit voltage of the device. As light power density increases, the open-circuit voltage of this device increases
significantly. (c) Continuous open-circuit voltage of the device. It can be seen that the device has a relatively stable open-circuit voltage under 254
nm light. (d) Responsivity of the device to 254 nm light with different light power densities under different working bias voltages.

Ilight − Idark
R=
P·S
In this formula, Ilight is the photocurrent, Idark is the dark
current, P is the light power density, and S represents the
effective illuminated area of the device.34 According to the
calculation results shown in Figure 4d, it can be found that the
smaller the light power density, the greater the responsivity,
which indicates a high responsivity owned by this device to
weak illumination. And the responsivity of this device will
increase with the increase of negative bias during operation
when the light power density of incident light stays the same.
The responsivity can reach 16.96 mA/W under the conditions
with the light power density of 104 μW/cm2 and the operating
bias of −7 V. What is more noteworthy is that the photovoltaic
detector can work with a high responsivity of 0.48 mA/W at 0
V bias, which has the potential to be used in the field of self-
powered energy in the future.
In addition, the stability and response speed are also
important indicators for the performance of a detector.35 In
this work, we artificially switched the light source (wavelength
= 254 nm) periodically to test the photoelectric response of
this device in a periodically changing environment of dark and
light. The curve of current versus time (I−t curve) for the
device under different working bias voltages is shown in Figure
5a (the value shown on the Y-axis is the absolute value of the
current). The results show that under different bias voltages,
when the device is exposed to light, its current will increase
rapidly and significantly. The photocurrent is almost
unchanged under the same working voltage, indicating that
the device has a stable performance and has the ability of being
(1)
used repeatedly. The response speed of the detector is divided
into two parts, namely, rise time (tr) and decay time (td).36
The rise time is defined as the time it takes for a detector
current to increase from 10 to 90% of the maximum
photocurrent, and decay time is defined as the time it takes
for the current to decay from 90 to 10% of the maximum
photocurrent.37 By normalizing the magnitude of the current,
we calculated the rise time and decay time of the device at
different bias voltages. The rise times of the device under
different biases are 0.47, 0.33, 0.16, 0.18, and 0.17 s, as shown
in Figure 5b; the decay times of the device under different
biases are 0.37, 0.14, 0.21, 0.34, and 0.33 s, as displayed in
Figure 5c. Regardless of the working bias, the rise and decay
times of the device are very short, indicating that the detector
has a very fast response speed.
The spectral selective response of a detector is of great
significance to sensitivity and anti-interference. Therefore, the
current of the device under different wavelengths of light is
measured, and the spectral response characteristics of the
detector are plotted. The I−V curve of this device and
corresponding incident light parameters during testing are
shown in Figure 6a. It can be seen that when incident
wavelength is greater than 280 nm, the photocurrent of the
device is close to its dark current, which exhibits an extremely
weak photoelectric response. However, when the device is
irradiated by 254 nm light, the current of this device increases
significantly. Considering the different power densities of light
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Figure 5. (a) I−t curve of the detector illuminated by a periodically switched 254 nm light source under different bias voltages. The detector has
obvious and consistent photocurrents under different bias voltages, which indicates its ability to work stably and repeatedly. (b) Normalized rise
time under different working biases. (c) Normalized decay time under different working biases.

Figure 6. (a) I−V curve of the device under different wavelengths of light. The current magnitude under 254 nm light is significantly greater than
that under other light. (b) Responsivity of this device to light of different wavelengths at 0 V bias. The response of this device to several kinds of
light with a wavelength greater than 280 nm is extremely low. (c) Responsivity of this device to light of different wavelengths at −7 V bias. (d)
Energy band diagram of Pt/(In0.11Ga0.89)2O3/n-Si heterojunction.

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Table 1. Comparison of Ga2O3-Based Solar-Blind Ultraviolet Detectors
main structure cutoff edge (nm) type bias (V)
Au/Ga2O3 270 photovoltaic 0 0.01
−10
Ga2O3/Ga:ZnO >300 photovoltaic 0 0.763
−4
Graphene/Ga2O3/SiC photovoltaic −5
Ga2O3 262 photoconductive 10
Ga2O3 230 photoconductive 30
Mg:GaO 243 photoconductive 3 140
Pt/(In0.11Ga0.89)2O3/n-Si 280 photovoltaic 0 0.48
−7
during the test, we calculated the responsivity of this device to
different light. The responsivity spectrum at 0 V bias is shown
in Figure 6b, where the responsivity of the device to several
types of light with a wavelength greater than 280 nm is
extremely low, while that to 254 nm light is significantly higher.
For example, the responsivity to 254 nm light is 196 times
higher than that of the device to 310 nm light. Figure 6c shows
the responsivity spectrum of this device at −7 V bias, which is
consistent with the spectral response characteristics at 0 V bias.
All of the above results show that the device has an obvious
spectral selective response, and its response characteristics to
light are in line with the absorption characteristics of the
(In0.11Ga0.89)2O3 film, thus confirming that the photoresponse
material of the detector is the (In0.11Ga0.89)2O3 film rather than
the Si-based substrate.
To further clarify the working principle of this detector, we
drew the energy band diagram of Pt/(In0.11Ga0.89)2O3/n-Si
structure without an external electric field, as shown in Figure
6d. Since the work function of metal Pt is higher than that of
high resistance (In0.11Ga0.89)2O3 in the detector,38 a Schottky
junction is formed between Pt and (In0.11Ga0.89)2O3; that is, a
built-in electric field (E1) directed from (In0.11Ga0.89)2O3 to Pt
is formed at their junction. Due to different carrier
concentrations, a built-in electric field E2 is also generated
between (In0.11Ga0.89)2O3/n-Si. The direction of E2 is the same
as that of E1, that is, from n-Si to (In0.11Ga0.89)2O3. When there
is no light, E1 and E2 prevent the diffusion of majority carriers,
resulting in a very small dark current of the detector. If a
reverse bias is applied to the detector, the range of E1 and E2 is
enlarged, and the movement of majority carriers is still
prevented. Therefore, the detector has an extremely low
reverse bias current. When the energy of incident light is
greater than the band gap (4.42 eV) of the (In0.11Ga0.89)2O3
film, the electrons of this film will be excited and transited to
the conduction band, and thus photogenerated carriers will be
generated. These carriers are quickly separated by E1: electrons
drift in the direction of n-Si and holes drift in the direction of
Pt. When the electrons drift into E2, the electrons continue to
move quickly under the action of E2 and then are transmitted
to an external circuit, generating the photocurrent in the
detector.
It is worth mentioning that this work systematically
compares the detector fabricated here with the Ga2O3-based
ultraviolet detector previously reported.39−44 Relevant data is
shown in Table 1. Chen et al. constructed a photovoltaic
detector with the Au/Ga2O3 structure,39 which has a very fast
response speed but a much lower responsivity at 0 V than that
obtained in this work (only 1/48 of this work) and a low
responsivity of only 0.6mA/W at −10 V bias. Another detector
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responsivity (mA/W) rise time (s) decay time (s) reference
0.000001 0.000064 39
0.6
0.197 0.272 40
2.305 2.962
180 0.65 1.73 41
<13 4.4 0.14 42
1.13 0.1 0.1 43
0.02 0.15 44
0.47 0.37 this work
16.96 0.17 0.33
reported by Wu et al.40 shows a similar responsivity at 0 V bias
as that displayed by the detector fabricated here, but its
response cutoff edge is greater than 300 nm, which is
susceptible to the interference from other light signals. The
detector reported by Shen et al.43 needs a higher working
voltage as working conditions, and its response range and
responsivity are worse than those of the detector in this article.
In conclusion, the advantages of the detector prepared in this
work are mainly reflected by three points: first, it can detect
solar-blind ultraviolet light accurately; second, it can work
without external electric field; third, it has a balanced and
excellent performance in terms of responsivity and response
speed. These advantages stem from the following two facts:
first of all, in this work, we have adjusted the band gap of the
(InxGa1−x)2O3 film so that the detector has a cutoff edge of
exactly 280 nm; second, a vertical heterojunction structure
such as Pt/(InxGa1−x)2O3/n-Si is constructed, and a double
built-in electric field is formed inside the detector, which is
conducive to the autonomy and rapid separation of carriers in
the detector.
■ CONCLUSIONS
In general, we have grown a high-quality (In0.11Ga0.89)2O3 film
with an absorption cutoff edge of 280 nm by changing the ratio
of In doping in the (InxGa1−x)2O3 films. On this basis, we
constructed a Pt/(In0.11Ga0.89)2O3/n-Si photovoltaic detector
with a vertical structure. In dark environment, the detector
exhibits excellent rectification characteristics; when it is
exposed to 254 nm light, an open-circuit voltage of 354 mV
can be reached. Under 0 V bias, this device achieves a
responsivity of 0.48 mA/W with a rise time of 0.47 s and a
decay time of 0.37 s; under −7 V, the detector owns a
responsivity of 16.96 mA/W with a rise time of 0.17 s and a
decay time of 0.33 s. In addition, the detector has a spectral
selective response, and its rejection ratio (R254 nm/R310 nm) is
greater by more than two orders of magnitude. The
photovoltaic characteristics of the detector come from the
effect of a built-in electric field on the photogenerated carriers,
and the spectral selective response comes from the absorption
characteristics of the (In0.11Ga0.89)2O3 film. Based on all of the
results exhibited above, this research can work as an important
reference for adjusting the band gap of Ga2O3-based films and
optimizing the construction of detectors.
■
AUTHOR INFORMATION
Corresponding Authors
Wei Zheng − State Key Laboratory of Optoelectronic
Materials and Technologies, School of Materials, Sun Yat-sen
ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
ACS Applied Materials & Interfaces
University, Guangzhou 510275, China; orcid.org/0000-
0003-4329-0469; Email: zhengw37@mail.sysu.edu.cn
Qichang Hu − College of Mechanical and Electrical
Engineering, Fujian Agriculture and Forestry University,
Fuzhou, Fujian 350002, China; National Engineering
Research Center for Optoelectronic Crystalline Materials,
Fujian Institute of Research on the Structure of Matter,
Chinese Academy of Sciences, Fuzhou, Fujian 350002,
China; Email: qchu@fafu.edu.cn
Authors
Zhao Wang − College of Mechanical and Electrical
Engineering, Fujian Agriculture and Forestry University,
Fuzhou, Fujian 350002, China
Shiyan Lin − College of Mechanical and Electrical Engineering,
Fujian Agriculture and Forestry University, Fuzhou, Fujian
350002, China
Yibing Wu − College of Mechanical and Electrical Engineering,
Fujian Agriculture and Forestry University, Fuzhou, Fujian
350002, China
Dapeng Ye − College of Mechanical and Electrical Engineering,
Fujian Agriculture and Forestry University, Fuzhou, Fujian
350002, China
Complete contact information is available at:
https://pubs.acs.org/10.1021/acsami.1c13006
Notes
The authors declare no competing financial interest.
■
ACKNOWLEDGMENTS
The authors gratefully acknowledge the support of the Natural
Science Foundation of Guangdong Province for Distinguished
Young Scholars (2021B1515020105), the Fund of the
National Engineering Research Center for Optoelectronic
Crystalline Materials (OCM-2020-07), and the Science and
Technology Innovation Special Fund Project of Fujian
Agricultural and Forestry University (CXZX2020101A).
■
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