J. of Electromagn.

Waves and AppL, VoL 26, 827-835, 2012

DESIGN OF SUBSTRATE INTEGRATED WAVEGUIDE

(SIW) ELLIPTIC FILTER WITH NOVEL COUPLING
SCHEME

L. Wu^'*, W. Shen^, R. QianS and X.-W.

Institute of Microsystem and Information Technology of Chinese
Academy of Sciences, Shanghai 200050, China
"^Center for Microwave and RF Technologies, Shanghai Jiao Tong
University, Shanghai 200240, China
^Department of Key Laboratory of Terahertz Sohd-state Technology,
China

Abstract—A novel fourth-order substrate integrated waveguide

(SIW) quasi-elliptic filter with novel coupling scheme is presented in
this paper. A microstrip resonator (MR) with two grounded ends is
introduced into the filter design. It not only acts as a resonator, but
also brings different direct couplings between MR and SIW resonator.
Then, quasi-elliptic response can be obtained easily. The proposed
filter has better frequency selectivity than the conventional third-order
SIW filter. A filter sample is fabricated on single-layer printed circuit
board (PCB) technology. Good agreements axe obtained between its
measured- and simulated S-parameters.

1. INTRODUCTION
Modern communication systems need high performance filters with
compact size, low loss and high selectivity. Cross coupling is introduced
to obtain transmission zero (TZ) at finite frequency [1,2], and the
TZ is located at the upper and lower stopband when direct couplings
and cross coupling are of the same and different nature, respectively.
Substrate integrated waveguide (SIW) has attracted much attention
in designs of microwave passive devices [3-16], due to its advantages
of low cost, low loss, and easy integration. We know that the electric
coupling between planar SIW resonators is difficult to realize. In [3],
Received 13 February 2012, Accepted 7 March 201S, Scheduled 12 March 2012
* Corresponding author: Liang Wu (wuliang@mail.sim.ac.cn).
828 Wu et al.

TE102 mode of SIW cavity is adopted in the third-order filter design,

and TZ is located at the lower stopband. However, the size of filter is
larger than its counterpart based on TEioi mode of SIW resonators.
Several structures etched on the top plane of filters are introduced in
SIW filters to implement electric cross coupling [4,8]. A microstrip
line acts as phase inverter is used to realize quasi-elliptic characteristic
in cascaded fourth-order SIW filter [7]. However, the area of filter
increases largely, due to the additional microstrip line.
In this paper, a fourth-order SIW filter with novel coupling scheme
is proposed. Two opposite direct couplings can be obtained, which is
contributed to the one-wavelength microstrip resonator. Therefore, a
fourth-order filter with quasi-elliptic function can be achieved, based on
two conventional third-order SIW filters. A filter sample was fabricated
on single-layer printed circuit board (PCB) and measured to validate
the theory.

2. FILTER DESIGN
2.1. Coupling Schemes of Third-order SIW Filter
First, we studied electric responses of two third-order filters. The
coupling schemes of them are shown in Figures l(a) and (b),
respectively. The solid and dotted lines represent positive and negative
couplings, respectively. The two direct couplings and a cross coupling
are of the same nature; therefore, the transmission zero is located at the
upper stopband for filter of Type-I. The transmission zero will move
to the lower stopband, if the direct and cross couplings are different.
Here, the bandwidth and center frequency of the filter of Type-I
and II are set be 300 MHz and 5.05 GHz, respectively. At their center
frequency, so-called as (n -f 2) coupling matrix are given by M^ and

I Source/Load
M,il í Resonator

f
M,.'^ W PojIMve coapling — Positive coupling
Negative coupling

(a) (b)

Figure 1. Coupling schemes of the third-order filters of (a) Type-I

and (b) Type-II, respectively.
Design of SIW elliptic filter with scheme 829

[17]
0 1.081 0 0 0
1.081 0.091 0.911 0.384 0
0 0.911 -0.351 0.911 0 (1)
0 0.384 0.911 0.091 1 081
0 0 0 1.081 0
0 1.081 0 0 0 "
1.081 -0.091 -0.911 0.384 0
M'' = 0 -0.911 0.351 0.911 0 (2)
0 0.384 0.911 -0.091 1.081
0 0 0 1.081 0
Their ^-parameters are calculated by [17]
S'il — 1 4 - 9 - 7 r4~-'^i "îni — —9-) r4~"-^i ('i\
11 — ^ ' ^J l^ J11' 21 — -^J [ ^ J 7V_|_2 1 • v"^/
where [A] is a function of coupling matrix [17].
The synthesized S'21-parameter of the third-order filter of Type-II
is plotted in Figure 2, with a transmission zero located at 4.68 GHz.
Meanwhile, the simulated S'21-parameter of the third-order filter of
Type-I is also plotted in Figure 2 for comparison. We know that the
two direct couplings and cross coupling axe of the same nature, the
transmission zero will move to high stopband.
The SIW filters presented in [5,6] are of Type-I, and the
transmission zero is located above passband. However, it is difficult to
move the transmission zero to a lower stopband. Then, TE102 mode in
SIW cavities is introduced in filter design to realize transmission zero
at the lower stopband [3]. A co-planar waveguide (CPW) etched on
the top metal layer of SIW cavities is introduced to get negative cross
coupling in a third-order SIWfilter[4].

^jp ResoiMtor

•—— Positiv« coupling

Figure 2. The synthesized 5- Figure 3. The coupling scheme

parameters offiltersof Type-I and of the fourth-order filter.
-II, respectively.
830 Wu et al.

2.2. Coupling Scheme of Fourth-order SIW Filter

To achieve quasi-elliptic response, a novel topology of the fourth-order
filter is proposed. It is the superposition of coupling schemes of two
third-order filters mentioned above. The coupling scheme of the fourth-
order filter is shown in Figure 3, This filter is designed to operate at
5,05 GHz with bandwidth set at 300 MHz. The generalized coupling
matrix for the quasi-elliptic filter with transmission zeros at —2.6j and
2j can be obtained by optimization [17]. The coupling coefficients are
expressed by
0 1.15 0 0 0 0
1.150.109 0,694 -0,77 0,22 0
0 0,694 -0,86 0 0,694 0
M= 0 -0,77 0 0,962 0,77 0 (4)
0 0,22 0,694 0,77 0,109 1,15
0 0 0 0 1.15 0
The synthesized 5-parameters of proposed fourth-order filter
are plotted in Figure 4. Then, better frequency selectivity can be
obtained, due to two transmission zeros located at 4.7 and 5.3 GHz,
respectively. They are generated by the third-order filters of Type-II
and I, respectively,

2.3. Design of the Fourth-order SIW Filter

Based on the previous third-order SIW filter, a fourth-order SIW
filter with microstrip line is developed to demonstrate high frequency

Fr«qu«ncy (GHz)

Figure 4. The synthesized 5- Figure 5. Top views of the

parameters for the fourth-order fourth-order SIW filter with mi-
SIW filter, crostrip resonator.
Design of SIW elliptic filter with scheme 831

selectivity. The microstrip line is taken as a resonator, which is

different from the one presented in [7]. The top view of the fourth-
order SIW filter is shown in Figure 5. It looks like two third-order
filters superpose together, which has two transmission zeros located at
the higher and lower stopband, respectively.
The electric field distribution of the fourth-order filter is shown in
Figure 6. The second mode of MR is applied in the filter design, and
grounded by via-holes of SIW cavities. We can see that the electric field
is minimized at two ends and center of microstrip line. Therefore, there
is 180 degree phase difference between two direct couplings introduced
by microstrip line and SIW cavities. Then, M13 and AÎ34 can be treated
as positive (negative) and negative (positive) couplings, respectively.

Figure 6. Electric field distribution of the fourth-order SIW filter

with microstrip resonator.

•m
a
•40

. . . d1>4.9nnin . . L9-10.5andL5o2.5mm
— d1=6.9nim — L»a11.5 and LS«3.0nmi
— L9O12.5 and LS«3.Smm

Fi»qu«ncy (GHz) Frequency (GHz)

(a) (b)

Figure 7. Simulated 521-parameter as a function of frequency for

different values of (a) di, and (b) L5 and Lg, respectively.
832 Wu et al.

Therefore, we can acquire a transmission zero located at the lower

stopband, and the transmission zero located at the upper stopband is
contributed to three SIW cavities.
There are three key parameters for filter design, di is used
to control the cross coupling, and the bandwidth of filter is mainly
controlled by L5 and Lg. The simulated S2i-parameters for different
values of di, and L5 and Lg are plotted in Figure 7. The two
transmission zeros will move close to passband with increasing di. The
bandwidth of filter is controlled by L5 and Lg. The bandwidth will
becomes larger with increasing of L5 and Lg.
The filter sample is fabricated on single-layer PCB, with the
relative permittivity of 2.65, a loss tangent of 0.0025 and thickness
of 1 mm. The diameter of via-holes is 1 mm. The unload Q-factor of
the SIW cavity and microstrip resonator are 368 and 347, which can
be obtained by commercial full-wave simulator (HFSS). Therefore, the

Table 1. Gometrical sizes of filter sample (unit: mm).

Symbol Quantity Symbol Quantity

Ll 25.46 3.4
¿2 25.46 Ls 10.2
¿3 25 ¿9 11.5
¿4 24 Wl 2.73
¿5 3 W2 1.4
Le 26.86 di 6.9

-60

3 4 S
Frequency (OHz)

Figure 8. Simulated and measured S'-parameter of the fourth-order

SIW filter.
Design of SIW elliptic fllter with scheme 833

insertion loss of filters will not degrade by introducing the microstrip

resonator.
The geometrical sizes of the fourth-order filter are summarized in
Table 1. The simulated and measured 5-parameters of the filter are
plotted in Figure 8 for comparison. The measured center frequency
and bandwidth of the filter are 5.1 GHz and 320 MHz, respectively.
The measured in-band insertion and return losses are about 1.5 and
below 11 dB, respectively. Two transmission zeros are located at 4.6
and 5.4 GHz, respectively. The slight shift of center frequency is due
to the inaccuracy of permittivity. As shown in Figure 8, a spur of 52i-
parameters at 2.5 GHz is contributed to the first mode of MR. The size
of presented fourth-order filter is smaller than the structure presented
in [7]. Better frequency selectivity is achieved than conventional third-
order filter presented in [4, 6], and without evident increase of size.

3. CONCLUSION
In this paper, we propose a novel fourth-order SIW filter with novel
coupling scheme. The coupling scheme is the superposition of two
counterparts of third-order cross coupled filters. The second mode
in MR is introduced to get transmission zero located at the lower
stopband. The proposed SIW filter has better frequency selectivity
than the conventional third-order SIW filter, with good agreements
obtained between its measured and simulated 5-parameters.

ACKNOWLEDGMENT
This work was supported by the National Basic Research Program
under Grant 2009CB320207 and 2009CB320204 of China.

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