KE Cc SEMICONDUCTOR KOREA BLECTRON|¢8 60.17. GENERAL HIGH VOLTAGE FEATURES PURPOSE APPLICATION, APPLICATION. + High Collector Breakdwon Voltage Venor 180V Vero 160V + Low Leakage Current. Teyo50nA(Max.) Saturation Voltage 2V(Max.) k soma, hy -8dB, (Max.) Veu=120V TECHNICAL DATA MAXIMUM RATINGS (Ta=25) CHARA RATING | UNIT Collector-Base Voltage Veno 180 v Collector-Emitter Voltage Vero 160 v Emitter-Base Voltage Vino 6 v Collector Current I. 600 | mA Base Current Is 100 | ma Collector Power Dissipation Pe 350 | mW Junction Temperature v 150 cv Storage Temperature Range | Tue 10} oe 1998. 6. 15 Revision No # 1 KEC "AXIAL PI 2N5551S -ANAR NPN TRANSIS type Name _|ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | Typ. | MAX. | UNIT Veu=120V, =O 0 | nA Collector Cut-off Current Ten Veo" 120V, k=O, Ta=1000 0] aA Emitter Cut-off Current lo | ViraV, k=O sof nA Collector-Base ) 7" - - Dsslown Voltage Vinwcno | k-0.1mA, h=0 180 v Collector-Emitter ] wo | ~ Breakdown Voltage Veen [tert a \ Emitter-Base “low Leo : ~ ~ Breakdown Voltage Nissen | netoudy Ire ° \ heh) | Ver=8V, k=1mA 80 DC Current Gain & ] tm K=10ma, 8 250 howl oma 20 Collector Emitter » | Verssot | le=10mA, In=tma ous | Saturation Volta Vewiar® | Ke-50mA, Ii-SmA 02 Base-Emitter » | Vimo | Te=10mA, In-Ima 10 Saturation Voltage a 5 V . Vowiar® | Ke-50mA, ueSmA 10 Transition Frequeney fr | Ver10V, k=10ma, f-100MHz | 100 300 | Mrz Collector Output Capacitance Gy | Veul0V, fe=0, f= 1MHz 6 | oF Input Capacitance Co | Vn-0.5V, k=O, (IME 20 | pr Small-Signal Current Gain he | Vee=10V, k=ImA, f=1kHz 50 200 wo iw >| Wa, E250 _T. Noise Figure NP | nystko, i:t0Hz~15.7KhW2 sie *Pulse Test + Pulse Width OMS, Duty Cyele 1998. 6. 15 Revision No ! 1 KEC