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    13 views3 pages

    SSD - Questions

    Uploaded by

    Shreyas

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    © All Rights Reserved
    Download as PDF or read online from Scribd
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    SSD. ASSIGNMENT SHARATH - B220526EC SHREYAS - B221210EC SUBIN -B220557EC ener D Consider a direct band gap p type semi conductor. The equilibrium hole density is 10*15/cm*3 and the intrinsic carrier concentration is 10*10/cm*3. the electron and hole diffusion lengths are 4um and 2um respectively. The left side of the bar(x=0) is uniformly illuminated with a laser having photon energy greater than the bandgap. Excess electron hole pairs are generated only at x=O because of the laser. Steady state electron density is at x=O is 10%12/cm’*3. Ignoring electric field, what is the steady state electron density at x=4um? 2) In asemiconductor with electron density n=10*19/cm*3 value of Ec-Efn = 300meV, where Ec and Efn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10°10/cm’3. For n = 0.25 x 10°19/cm*3 what is the value of (Ec-Efn)? 3) A piece of silicon is doped with Boron with a doping concentration of 10*12/cm*3. The value of mobility vs doping concentration is shown below. Find the conductivity of the silicon sample at 300K. 10°12 1015 doping concentration 4) Choose the correct statement from the following ; 1. Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is the recombination current 2.The concentration of minority carriers in an extrinsic semiconductor under equilibrium is inversely proportional to doping concentration 3. Drift current in the semiconductors depends upon the electric field only 4. Doped semiconductors have a net charge existing on them 5) An n-type GaAs semiconductor at T = 300 K is uniformly doped at Nd = 5* 10°15 /em*3. The minority carrier lifetime is t(p0)=5 * 10-8) s. Assume mobility values of up= 7500 cm? /V-s and up =310 cm2 /V-s. A light source is turned on at t= 0 generating excess carriers uniformly at a rate of g= 4* 10°21 /cm’3 s and turns off at t = 10°(-6) s. (a) Determine the excess carrier concentrations versus time over the range 0

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