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    US11646177

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    2) United States Patent oy ow ~ my) wo @ (60) on) 8) Kaplan DWER SOLID-STATE MICROWAVE, GENERATOR FOR RF ENERGY APPLICATIONS, Applicant: CELLENCOR, INC, Ankeny, 1A (US) Inventor: Kenneth Kaplan, Ankeny, 1A (US) Assignee: Preclsepower, LLC, Gilendale Heights, Las) Notice: Subject to any disclaimer, the term ofthis pateat is extended of adjusted under 35 USC. 1540) by 20 days. Appl. No.: 169947,134 Filed: Jul, 20, 2020 Prior Publication Data S 202010380141 AL Nov. 5, 2020 Related US. Application Data Division of application No, 16/129,299, fled on Sep. 12, 2018, now Pat. No, 10,720,310. Provisional aplication No, 62/588,553, fled on Sep. 14, 2017 Int. Ch, HOLS 3732 (2006.01) Hows 3724 (2006.01) HO3F 319 (2005.01), Hos 321 (2006.01) noLs 37244 (2006.01) HOS 668 (2006.01) OSB 670 (2005.01), u CPC i. HOLS 3782201 (2013.01): HOLS 37244 (2013.01); Mozy 37232311 (2013.01); OBE ¥Y19 201301); HO3F 321 (2013.01); HOSB (686 (2013.01); HOSB 6/705 (201301) Field of Clasitcation Search None ‘ce application file for complete search history. 01 ‘USO11646177B2 (10) Patent No.: (4s) Date of Patent: US 11,646,177 B2 May 9, 2023 66) References Cited US. PATENT DOCUMENTS. 4.196332 4/1980. MacKay ot a AIST A IIE. Note ea SOROS A “11902 Jackson tl 5179264 811999 Coomo otal S'561395 A 101905 Melon eta (Continsed) FOREIGN PATENT DOCUMENTS ew oisosass * 82018 Gosp 2919 (OTHER PUBLICATIONS ‘York, Robert A, "Some Considerations fr Optimal Hsiency and Tow Noise in Large Power Combines", IEEE Transactions on Microwave Theory and Technigqes, 0, 4, Ise § pp. 1977-1482, Aug 2001 Primary Examiner —Dedei K Hammond (74) Attorney 2, PLC Agent, or Firm —MeKee, Voorhees & on Ans RACT A microwave generating system includes a modular archi- tecture which is configurable to provide power itp from under I-kilowatt to over 100ckilowatts. The various power Teves are achieved by combining the RF outputs of multiple RE power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incor porates a dedicated embedded microcontroller for high Perfomance real-time eontrl response. The components fare connected to a high speed digital data bus, and are ‘commanded and supervised by « control program running on ‘host computer, 14 Claims, 9 Drawing SI US 11,646,177 B2 Page 2 66) References Cited USS. PATENT DOCUMENTS. S501397 A 101996 Kumar a So0825) A "RDN Kuma oa 020.794 822000 Willie 080467 BL 1.2004, Whipple, J ‘uses? B2 10.2009 Beatton ta S609 B2 "12018 Grandemenge & a 200s'0267669 AL 10 2008 olese9s AL "72011 dovwoosre8 AL 42014 ‘tal ‘0350460 At 122016 Gara et aowworsesis AL* “52018 Ma Hos 6685 * cited by examiner US 11,646,177 B2 Sheet 1 of 9 May 9, 2023 U.S. Patent [or LO sjeuis jonuoy et son ‘apa OMEN Zb A urayshs 2uj009 eee ve z wun oft essenun, ov ZL iy TTT] svn SvdSSOL svaSSOL sng eiea uaists jonuoy ss | meceesncennne : Burl fe]KeOD i so apindonem i se 1 somog somog ! paweayey puemos t Aiquiassy tL E01 10410 40 saydn09 oyna ood “uaa ‘soyeoyddy jeuograig < nema Suna oe st or US 11,646,177 B2 Sheet 2 of 9 May 9, 2023 U.S. Patent zor sopaea |_| ssomes sang povouey — Ly — a aay ay ron L--4 one Lape (ose) 94409 i om evan ming ! sayndue> son “unis oy t ‘own wesoid aL uonaeaea sng soonsa || sousnwoa \ wt vt semogpemsoy —o] “ued | | sua | ost vst ' ‘Away eed a \ \ 1 smyonuosonin I ods \ ' \ I t : —— - seve \ ee 4 2 ' dury wes days | argeven veda sous seus 2 ap oc I] spsze fr aseyd ose [* anduy Z rt az wi ett son 80 sna 70 r aoumjny fx] Pavensen Ayquassy soyydwy anduy aiding 4 ay famag oF 20 sujeuoe Sionba Tesh o on sansoss sovonbois vnaino| om aurea fe a U.S. Patent May 9, 2023 Sheet 3 of 9 510 520 530 Frequency Power Measured MHz Preset Return Loss 2400 2000 10 2401 2000 10 2402 2400 16 2403 2400 7 2404 4000 2 2405 4000 22 2406 6000 25 2496 5000 24 2497 2000 10 2498 1000 10 2499 oO 7 2500 oO S FIG. 3 — US 11,646,177 B2 500 Band Map U.S. Patent May 9, 2023 Sheet 4 of 9 US 11,646,177 B2 200 Microwave Generator A Waveguide External RE In ; External RF Out — | 240 Waveguide ‘Combiner 210 Power Microwave asco eaten Generator B aaa! enteral AF Out oes computer FIG. 4 US 11,646,177 B2 Sheet 5 of 9 May 9, 2023 U.S. Patent eipew a1 andino 38 $0 aydues Jamog peeve 4914009 jevonpenia ost sioreinout9 aoparea #8 zep separa 22pinig 4eMod vot ste aygeuen Sty —t— says aseud ow SiOH1UOW Aoway Woud33 06% samog30 one se as pods ui pow orpan2sue so0M00 I yayonu0> “O11 o9y {yun jenUoD JaylduAy JaMmog ogy anduy 4 (se) sng ea ose weashs jenuep US 11,646,177 B2 Sheet 6 of 9 May 9, 2023 U.S. Patent 9 Old sng cea ae === waisis jost0) soun worsswsuea, un uorssiwsues exeo9 anding yas ste | jewe09 indul vas Soe ss 00€ (ot) wun 00 pannel ajdues aydwes 00f = = tn Pomow ‘oyiemog 9) jeuonseag Gaponvass _ mt Leen st | tit, ‘BINPON WdSS_ a US 11,646,177 B2 Sheet 7 of 9 May 9, 2023 U.S. Patent 29 AIRPOW Wass 00€ SIRPOW Wass o0€ =INPOW Wass, 00E, Peorsosn Lenina “M*PONVESS fee o¢ aINPOW Wass 008, SInPOW Wass, sng ere, a == ===> wayshs jonu0y ‘sau wossuusuen, se andul sy 008, seuuawy aINPOW Wass: sepia 00€, aINPOW Vass: samod 8 OT ore 08 US 11,646,177 B2 Sheet 8 of 9 May 9, 2023 U.S. Patent i OMegeSI22Id pts 91s 8 Old US 11,646,177 B2 Sheet 9 of 9 May 9, 2023 U.S. Patent 6 Ol xB womome Bn asomey US 11,646,177 B2 1 HIGH-POWER SOLID-STATE MICROWAVE (GENERATOR FOR RF ENERGY APPLICATIONS, CROSS-REFERENCE TO RELATED APPLICATIONS. This application is @ Divisional Application of US. Set No. 16/129,209, fled Sep. 12, 2018, which claims priority under 35 U.S.C: § 119 to provisional patent application US. Ser. No, 62/858.553, fled Sep. 14,2017. All applications are herein incorporated by relerence in their entirety, ineloding without Finitaton, the specification, claims, and abstract as ‘well as any figures, tables, or drawings thereof. FIELD OF THE INVENTION ‘The invention relates generally to the field of microwave systems, More particulary, but not exclusively, the inven- tion relates to systems, methods, andlor apparatus for the generation, control, monitoring, and operation of high pow= ‘red microwave generation ullizing solid state components BACKGROUND OF THE INVENTION High-power microwave systems ae used in many appl ‘ations, including consumer, industrial, medic, and scien- lle sectors. In addition 0 the ubiquitous consumer miero- ‘wave oven, high-power microwave systems are used to cook ‘oF thaw food produets at an industrial sale, to dey many bulk organic and inorganic materials, to set resins in com posite material to create plasmas for semiconductor mami- facturing, and many other industrial applications. Magne- tron tubes have been used almost exelusively for over $0 years to generate high-power (Irom 1 to 10 kilowatts) microwave energy. Magheteons are relatively efficient and ‘cost-effective in conversion of line power to microwaves, ‘On the other hand, industrial magnetrons have many disad~ vantages, sch as relatively short lifetimes (2000 to 6040 hours), high replacement cost; problematic reliability in ‘continous process applications; limited ability 19 contol ‘output power, limited or no possibility of moxtulaton, being restricted to a fixed frequency. instability, inchuding mode jumping, and use of dangerous very high voltages. Unlike ome other higher power radio lresueney (RF) applications such as communications or broadcasting, high-power sys- tems are usually continuous wave and-no infomation is carried by the RF output, Most high-power microwave systems operate in the government allocated. Industri Medical, and Scientific (ISM) bands. The bands most com- ‘only used for microwave heating in the United States are 902-928 MHz (°L band”) and 2,400 to 2,500 GHZ ¢S- band”). Allocations vary in other regions of the word ‘Recent advances in semiconductor technology have made it practical and economically feasible to construct high- power solid-state microwave generators fo replace magne- trons in many applications. The benefits of frequency agility possible with solid state devices have been known for some lime, see eg, MacKay, et AL, U.S. Pat. No. 4196332, and Nobue, et. Ai, U.S. Pat. No. 8,415,789. Laterally difused metal oxide semiconductor (LDMOS) and gallium nitride (GaN) transistors ae well suited for this application. Cur- rently, no single transistor can deliver the power of 8 high-power magnetron, so the needed power output is ‘achieved by using multiple power amplifier transistors oper sted in parallel with their outputs combined to produce © single power output. Functional blocks of two, fou, or more 0 o 2 transistors ca be further combined in a hierarchy to achieve a system with very high output power levels. Solid-state ‘crowave generators are in fact amplifiers, so thei ouput ‘requency, phase, and amplitude can be varied in any com- bination. This gives solid-state microwave generators many ‘efi capabilities which are difficult or impossible to obtain ‘rom magnetron. ‘The main use of a microwave RF energy system is t0 apply high-power microwaves to some type of material, whieh may be a solid, liquid, or gas. Microwaves provide & unique fom of volumetic heating. Often, but not exelu- sively, the purpose isto heat the material fo eook it oF dry it, Other uses include generation of plasma arcs, excitation of catalysts, and acceleration of chemical reaetions, among others. The material being processed is prefered to be enelosed in some type of chamber which is mainly made of aluminum, copper, or stainless steel. The container can have ‘many fos including a large box, a tank, a pressure vessel, fr even just wavepuide. One or more feeds or antennas are ‘used to apply microwave energy to the process material ‘Within the industry, the zener term used forthe processing chamer is called an “applicator”. Applicators are typically ‘equipped with devices move the material heing process various sensors to monitor the process, and safety devices 10 prevent accidental exposure of microwave energy to people The material being processed within the applicator is com- monly called the “load”, The microwave energy source is ‘normally connected to the load using a transmission line of waveguide or coaxial cable, "As with any RP system, maximum energy is transferred when the generator, transmission line, and load have ‘matched impedances, The impedances of the generator and ‘ransmnssion line are defined and effectively eonstaat. The lead impedance is « complex conjugate which includes the electromagnetic properties of the applicator structure, the shape, mass, psition, and dielectric propenies of the load. ‘These may all imeract with each other. Often the character istics of the load, and therefore the applicator impedance, will vary'significantly during system operation dve to ehang- ing properties ofthe load materia ‘When there is an impedance mismatch, electromagnetic waves are relloted fromthe applicator throwgh the trans- mission Tine back (0 the generator, and standing. waves ‘appear in the tasmission line, There are several detimeatal effects of standing waves, Firs, there i alos of efficiency. ‘The reflected power will he absorbed by the transmission Jine andor the generator. This energy i lst as waste heat ‘The standing waves can result in high voltage whieh ean cause ares in the applicator of waveguide, or may damage the generator. change in load impedance can also alfct the stability and performance of the generator. The simplest and ‘ost common approach to protec the amplifier isto provide ‘ method of detecting excessive reflected power and redc- ing the power output proportionally (for example, see Jack- son, ot AI. US. Pat. No. 5,084,425). This technique may prevent damage tothe amplifier but has the disadvantage of preventing full power output A circulator deviee is usually installed in line at the generator output to absorb and dissipate relloted power Which protects the generator and provides constant imped- fance, In some cases, load mismatch problems are partially addressed using, manual or atiiomatie waveguide tuners. ‘These generally comprise of two or more tuning rods that are extended into the waveguide. Manual tuners cannot adapt 10 ‘pid or recurring changes inthe load impetance. Automatic tuners are relatively slow because they are basically US 11,646,177 B2 3 mechanieal devices drivea by stepping motors and both types add significant cost and complexity tothe system. "Another approach is system tuning by varying the wave= length of the microwave enengy. The wavelength is directly proportional to frequency. This i aot possible with magne- trons because they are inherently fixed Traquency’ devives. However, solid-siate mierowave generators can be fre- ‘quency agile and operate anywhere within the permitted TSM bands. When the microwave Irequeucy is swept across the band, impedance changes ofthe ead become apparent. ‘Oea there will be multiple frequencies or ranges of fre (quencies where a relatively good match may occur. The lnvention provides a means to dynamically ideatify optimal matching frequencies and automatically tne the microwave enerator to those Irequency ranges. AS a result, less reflected energy is absorbed by circulators. This saves ‘energy and reduces the cooling systems required capacity "Another eral factor is distribution of electromagnetic ‘energy in the three dimensional space within the applicator. ‘This is a very complex topic. The electromagnetic field disiibucion depends on the microwave wavelength, the 2 toometey of the applicator, the locaton, phase and type of the feed(s), and many other factors. The applicator may be ‘ofa pseudo-resonant type, which is refered to as a "single mode applicator” hecause a single electromagnetic mode is ‘dominant within the applicator. Typically. there isan ofB2— nized and well-defined area of high energy. This isthe most ‘desirable location forthe load for maximum energy’ adsomp= tion. Most commonly used are the “multimode applicators” ‘which are non-resonant al have a wide varity of waves of Various modes scattered in a somewhat random pattern. ‘There is consiractive and destructive interference of waves having different modes and phase at various points within space af the applicator. Uhis gives rise old spots” within the applicator. Oe, ‘cooking, drying, and heating systems ate equipped with, devices 1o stir the Waves scl as rotating aatennes, oF turntables used to rotate the load as ae commonly’ provided Jn consumer microwave ovens. Practical applicator design is “dificult. Powerful electromagnetic simulation software be used 10 model applicator design, but real-world perfor mance is often significantly dierent, usually due dynamic load variation, ‘When the operating frequency of a microwave generator js swept across the band, the phase and modes of the intersecting waves in the applicator move around. As a result, inerference nodes of high and low energy change locations in the thee-dimensional space of the applicator “This results in more uniform heating of material inside the applicator, offen eliminating the need for mechanical wave Sires or turntables with resulting reduction in cost and ‘complexity “The preceding explains two important benefits of the frequency agility of solid-state microwave generators, Hows ‘ever, to take advantage ofthis ability itis also necessary to have procise-power contol over avery wide dynamie range, and have highly accurate means to measure the forward ‘output power ofthe generators and the eneny reflected fom the loa! due to impedance mismatch, Iti also necessary to have a control system capable of automatic management of frequency’ and power during the operation of the ealre imerowave system, The control system also needs o be easy to openite for is uses SUMMARY OF THE INVENTION “Therefore, itis a principal objet, feature, andor advan tage ofthe disclosed features to avercome the deficiencies in the ar. 0 o 4 Aspe ofthe invention disclosed herein inlude a hi power solidstate microwave penerator, The moduler mi level corporate architecture permits configurations of vari ‘ous ounpit power Jevels from under 1 kilowatt t0. 100 ‘ilowatts or more. The various functional components ofthe system are contolled by embedded microcontrollers con- ‘nected by an intemal high-speed data bus directed by & master computer. This provides high speed real time response during operation. The system permits precise con- teol of output power, phase, and frequency. A sophisticated and versatile Irequeney sveep and output impedance mea- surement capability allows the system fo automaticaly and ‘dynamically mate to varying load impedances following a pe represented in n Bund Map table. The invention also provides an integral one port network analyzer function ‘whieh can be utilized when the system is ile or running, Adaptive power control precisely adjusts power output t0 changing loads according to userdefinable miles. A Band ‘Map data strcture is use to define the operation of sweep rds. A grphical user interkive program provides the ability to create, edit, save, and load Band Maps. The sytem includes the ability to perform static and dynamic phase ‘matching of fintional RP units at multiple levels. special mode is provided for microwave plasma excitation ‘A technique for statie and dynamic phase and amplitude balaneing of «plurality of SSPAs (solid state power ampli- fiers) is also provided. The microwave generator system is able to deliver very high power levels by combining the RE ‘uipat of multiple Power Amplifier Modules. This is done by connecting their opts wo an N-way power combiner. It is. characteristic of power combiners that maximum poster ‘ouput and minimum power loss oeeurs when all ofthe input fare matched within a narow range with expect to phase and phase matching being most eriical. When smplifer system is operated, the actual phase relationships may change. Inthe shor ten this is primarily de to heating of eomponent and intereonnecting cables. Inthe Tong term, is may be the result of component ‘ging or replacement. The system can perform a matching eyele by comparing the total power oviput while adjusting the phase and amplitude to various combinations of Poser Amplifice Modules (which can be enabled independently) until all are phase matched. Due to the utilization of extremely fast power detectors and power contro atten tors, a phase matching eyele over the entire system can be ‘executed in 8 period of milisoconds. When operating, the system ean periodically (on the order of minutes or hours) can briefly suspend power generation and execute a math ing eyele. The time required to do so isso short the effect on total energy delivered by the system is miniscule ‘Additional aspecs include dynamic frequency sweeping ssross an entire band, or selected portions ofa band, with the abil to specify an output power level at each fequency interval and frequency hopping. The preset data values for frequency sweeping are stored in a Band Map, which is a data stracture synchronously maintained in the memory of the Fxciter Unit and the Host Computer. The table contains numberof encies representing equally spaced frequencies across the entire operating band. Each entry contains a value or an output power preset and the messured output return Joss a the specitie frequency: The Band Map is erated and ‘peated either manually by the user or astomatically on the Host Computer. copy ofthe Band Map is maintained inthe ‘memory of the embeded microcontroller on the Fxciter ‘Unit, which updates in eal time the return loss measurement values. The Host Computer executes & protocol. which ntains coherency between its copy of the Band Map and US 11,646,177 B2 5 the copy in the Exciter Unit in near realtime. When the system is ruaning it steps though the band from lower to higher frequencies a intervals coresponding to each band map entry Fach diserete frequency has a power preset valve in the Band Map able, At he beginning of each step, the RF ‘oupit power is st to-8 preset value fom the table, and is held at that power level for the user-defined time. When the step time has expired, the system moves to the next higher frequency. If the power preset for the next step is ze, the system immediately skips to dhe next frequency that has 2 non-2er power preset. Ranges of fieguencies with poor impedances or where the user does n0t Want 1o use cat be Jocked out by setting their power presets to ero. This results in frequency hopping. The sweep sequence repeats unl the highest possible frequency is reached, and the sweep repeats ‘again starting atthe lowest frequency. Band Maps ean be saved to and loaded from host computer files ‘An Automatic Baad Map Creation function for generating an optimized Band Map which will deliver maximum poser tw a load with varying impedance across the bund is also provided. This faneton is executed by software running on ‘a Host Computer. The system then commands a return loss can, which fills the Band Map table with measured retira Joss data at each frequency interval. There are two user defined retum loss thresholds. The frst is. an Absolute Retum Loss limit. This represents the minimum tolerable retura loss where excessive reflected power could damage of ‘overheat the generator, transmission lines, the applicator, oF ‘ease acing. The second is an Adaptive Retum Loss Limit, value fo the level where the impedance match is elatively poor but aot pmbibitive. At frequencies with retum lose below this limit, the power preset will be propositionally recived to limit the absolute level of reflected power, When ‘executed, at each frequency, the power preset will be set automaticaly according to these cules: a) Full preset power ifthe measured return loss is preaer or equal othe Adaptive Retum Loss Limit; ) zero power ifthe measured rtum loss js less than or equal to the Absolute Retum Loss Limit 0 that frequency will be skipped orc) Ifthe measured retura Joss is less than the Adaptive Return Loss Limit and above the Absolute Return Loss Limit, the power preset at that frequency will reduced by a user defined dB parser amount per di of measured power below the Adaptive Retum Loss mit As a result, when executed the Band Map will use {ull power to be generated at all Irequencies above the Adaptive Retum Coss Limit, at proportionally reduced power a frequencies below the Adaptive Retum Loss Limit ‘and no power will be generated at frequencies below the Absolute Retum Loss Limit. The user software ninaing on the Host Computer provides editing featares that pemnit the user to adjust or fine tune an atomically creed Band Map. ‘An Adaptive Power mode of operation were dynamic adjustment of power relative to preset power level oecurs while the system is generating RF. power. The system therefore is able to safely deliver the maximum possible ‘average power to the load over a range of frequencies over time even as the impedance ofthe load changes significantly. This function is executed in real time by firmware ruaaing ‘on the embedded mirocontoller in the exciter unit. At the beuinning of each frequency step during a sweeping opera tion, the Exciter Unit changes the frequency of the digital frequency” symhesizer 10 the new frequency. Next, the microcontroller reads the system's forward and reflected ‘output power and calculates the instantaneous return Toss vali, which is compared to the Adaptive Return Loss and the Absolute Return Loss limit settings, It then adjusts the 0 o 6 power preset value obtained from the Band Map table as follows: a) the fll preset power is set if the measured return Joss is greater or equal o the Adaptive Return Loss Limit; 1b) zero poser is sot and the current frequeney step is terminated if the measured return Joss is les than oF equal to the Absolute Rem Loss Limit; or e) If the measured return loss is less than the Adaptive Return Loss Limit and hove the Absolute Return Loss Limit, the power preset at that frequeney will reduced by a user defined dB power amount per dB of measured power below the Adaptive ‘Retum Loss Limit Asa result, ull power to be generated at all frequencies above the Adaptive Return Loss Limit, at proportionally reduced power at frequencies below the Adaptive Retum Loss Limit and no power will be generated at frequencies below the Absofute Retun Loss Limit. This ‘ature ean also be used in single frequency operation. According to addtional aspects, an integral single port setwork scalar analyzer funetion includes two operating modes: ') a staie Network Analyzer function ia whieh the Host ‘Computer commands the Pxeiter unit to perform a low power frequency sweep across the entire band at each roquency comesponding to each entry inthe Band Map. The return loss at each frequency is stored in the Band Map table Te retum loss data is plotted on the user interface Band Display, which provides the functionality of a one port network analyzer. The system can execute a single or ‘continuous sweeps, The network analysis is of great vale 10 the user: for ereation of a hand map, manually oF automs cally, capable of maximum power delivery 0 a load with varying loed impedance sctoss the band: for testing the {ronsmission ines and applicator, and for manually adjust- ing the applicator loads or tuning. ’b)a dynamic Network Analyzer function active when the system is operating, where the Exciter Unit tninsmits near real-time retum loss data to the Host Computer, which thea plots the data on the Band Display. This provides tothe user near real time picture of the load impedance versus frequency; which may vary considerably over time as power is applied to the load due to changes in temperature, posi ‘Additional aspects of the invention include an Adaptive Power mode of operation where dynamic adjustment of power relative to a preset power level oecurs while the System is generating RP power, The system therefore is able to safely deliver the maximum possibie average power tothe Toad over a range of frequencies over time even as the impedance of the load changes significantly. This function is ‘executed in realtime hy firmware cunning on the embedded ‘microcontroller inthe exciter unit. At the beginning of each roquency step during a sweeping operation, the Exciter Unit changes the frequency ofthe digital frequency synthesizer to the new frequency, Next, the microcontroller reads the system's forward and reflected output power and calculates the instantaneous retur loss value, whieh is compared to the Adaptive Return Loss and the Absolute Return Loss limit settings. Itthen adjusts the power preset value obtained from the Band Map table as follows: a the full preset power is set ifthe measured tum loss is preater or equal tothe Adaptive eum Loss Limit; b) zero power is set and the curent requency step is terminated if the measured return Toss is Jess than of egoal to the Absolute Return Loss Limit orc) the measured return loss is Tes than the Adaptive Return Loss Limit and above the Absolute Return Loss Limit, the power preset at that frequency will reduced by a use defined {8B power amount per dR of measured power below the Adaptive Return Loss Limit, As a result, fll power to be US 11,646,177 B2 1 enerated at all frequencies above the Adaptive Return Loss Limit at proportionally reduced power at iequencies below the Adaptive Return Loss Limit and no power will be ‘generated at frequencies below the Absolute Retum Loss mit. This feare can also be used in single frequency ‘operation, Sill further aspects include a plasma exeiterfunetion for driving plasma generators, which provides a discrete higher power ignition pulse immediately followed by a lower power muintenance level, and the option of pulse wits ‘modulation of either of both, ‘Ako disclosed is a method for automatic gain matching and balancing ofthe RF power transistors within the Power Amplifier Modules by means of realtime monitoring of ‘drain current and the temperature of each transistor, and adjusting the gate bias proportionally. ‘According to saldtional aspects ofthe invention, Solid ‘State Power Amplifier (SSPA} Modules each incorporate: @ rhumber of solid state power amplifier power pallets oper- ‘ating in parallel: high speedigh resolution Forward and reverse power detectors, wide dynamie range programmable RP attenuators; programmable phase shifters, and a high performance embedded microcontroller, all interconnected ‘o an intr-module high speed digital data bus. The micro- ‘controller contols ae monitors the power ampli pallets containing the RF power amplifier transistors, including managing gate biss and temperature compensation, The microconioller also monitors the dean voltage and current ‘of the transistors to protect them from sbnormal conditions. ‘An MPAC monolithic digital phase shifter and attenuator in the RP path allows the unit to adjust the output phase and power level so that multiple Power Amplifiers ins corporate $tnicture can he tuned for maximum system power combiner performance. Power Amplifier Modules receive and execute ‘control commands and returns operational data to a master ‘control computer over a systemwide high speed digital data bs, ‘An Exciter Unit provides a master drive RF signal via an Neway RF divider a is distributed in common phase to the power amplifier modules. The drive signal controls. the frequency: phase, and baseline power output level of the SSPAs. The drive signal also performs gain leveling as the ‘output power level and operating frequency changes. The Exciter Unit comprises: a digital feeqnency syuthesizer high speedhigh revolution forward and reverse power detectors ‘connected 10 a directional coupler located on the main system RF output; wide dynamic range programmable ‘coarse and fine range RF attenuators, programmable phase shifters, and a high performance emblded microcontroller, all interconnected to an intea-modile high speed digital data bus. The microcontroller executes autonomously in real- time algorithms capable of single froqueney or selective Jrequency’ sweeping, output forward power, reflected poser and retum loss measurements, adaptive power control, ott- put power measurement, and phase adjustment while the System is generating RF power ouput. The Pxciter Unit receives nd executes contol commands and retims opent- tional data to-a master control computer over a system-wide high speed digital data bus. ‘A Host Computer executes program that provides an ieractive user interfice and directs the overall system ‘operation by sending commands and receiving operating system to and fom the Exciter Unit, the power amplifier modules, and other subsystem over system-wide high-speed ‘igital data bus. “These andlor other objects, features, and advantages of the disclosure will be apparent to those skilled inthe art. The 0 o 8 present invention i aot to be limited to or by’ these objects, Teatures and advantages. No single embodiment need pro- vide each and every object, feature, or advantage. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic of architecture of a solid-state mieowave generator system according to at least some aspects of the invention, FIG, 2 is a schematic depiction of an exciter module according to aspects ofthe invention PIG. 3 is an exemplary Band Map intemal data structure {or use with the disclosed, PIG. isa schematic illustration of phase matching of wo generators, as diselosod herein. FIG. Sia schematic representation of solid state power amplifier (SSPA) module according o aspects ofthe inven- ‘io, FIG. 6 is a schematic representation of independent ‘output configurations for a plurality of SSPA modules. FIG. 7 is a schematic representation of combining the ‘ouipuls of @ plurality of SSPA modules, FIG. 8 isan exemplary user interface screen for use with the systems of the present disclosure. FIG. 9 isan exemplary user options sereen as part ofthe user interface according to aspects of the invention, ‘Various embodiments of a system and related components are described in detail with reference to the drawings, ‘wherein like reference numerals represent like parts ‘throughout the several views. Reference to various embodi- rents docs not limit the scape of the invention, Figures represented herein are no imitations tothe various embedi- sents aoconding to the invention und are presented Tor exemplary illustration ofthe invention, DETAILED DESCRIPTION OF THE, PREFERRED EMBODIMENTS The following definitions ane introductory matters are provided to facilitate an understanding ofthe present inven- tion. Unless defined otherwise, all technical and scientific fers used bercin have the sume meaning as commonly understood by one of ondinary skill in the art 10 whieh ‘embodiments ofthe present invention pertain, “The terms “2,” “an,” and “the” include plural referents unless context clearly indicates otherwise. Similarly, the word “ori intended to include “and” unless context clearly indicate otherwise. The word “or” means any one member of particular lst and also inckudes any combination of mem- bers ofthat list. The terms “invention” or “present invention” as used herein are not intended to refer to any single embodiment of the particular invention but encompass all possible embodi- meats as deseribed in the specification and the claims. “The tem “about” as used herein refers to variation inthe ‘numerical quantities that can ooeur, for example, though ‘ypiel measuring techniques and equipment, wth espect 10 any quantifiable variable, ineluding, but not limited to, mass, volume, time, distance, wave length, frequency, voltage, current, and electromagnetic field. Further, given solid and Jiquid handling procedures used in the real world, there is certain inadvertent eror and variation that is ikely though differences in the manufacture, souree, or purity of the ingredients used to make the compositions or carry out the ‘thods and the like, The claims inchide equivalents to the ‘Qantites whether oF not modified by the tem “about” US 11,646,177 B2 9 The term “eontigured” deseribes an apparatus, system, oF ‘other stucture that is constricted or configured to performs a particular task or (0 adopt a particular configuration. The term “configured” can be used interchangeably with other Similar phrases such as constricted, arranged, adapted, ‘manufactured, and the like. Terms such as first, second, vertical, horizontal, 1p, bottom, upper. lower, front, ear, end, sides, concave, cone vex, and the like, are referenced according to the views prevented. ‘These terms are used only for purposes of ‘description and are not limiting. Orientation of an objeet oF ‘2 combination of objects may change without departing from the seope of the inveation ‘The apparatuses, systems, and methods of the present ‘invention may comprise, consist essentially of, or consist of the componeats of the present invention described her The term “consisting essentially of” means thatthe apparae tuses, systems, and methods may include additional com- ponents or steps, but only ifthe additional components of eps do not materially alter the basic and novel character istics ofthe claimed apparatuses, systems, and methods. ‘The following embodiments are described in sufficient detail to enable those skilled in the ait to practice the ‘vention however other embodiments may be utilized. Mechanical, procedural, and other changes may be made > without departing Irom the spirit and scope ofthe invent Accordingly, the scope of the invention is defined only by theappende claims, slong with the fll scape of equivalents to which such claims are entitled ‘The hasie architecture ofa solid-state microwave genera tor is shown in FIG. 1. The microwave generator has many subsystems, The architecture # unique in that rel-time ‘contol and processing is localized in various functional units, each having a dedieated microcontroller. These are inerconnected within the generator assembly by « high- speed local network (38). This network is designed to be resistant to RF interference using hardware and software techniques. To achieve high power output, large number of power transistors are operated in parallel, There is consid- ‘erable processing overhead in managing their operation with, respect to omtpit power control, active biasing, temperature ‘compensation, over-femperature monitoring, and drsin cur rent monitoring, Devel¥ing these tasks to local embedded microcontrollers reduces complexity, cost, and enhances ‘overall system performance. This architecture is highly modular whieh easly allows for configuration of various system sizes and power output levels. Another benefit is ful tolerance. I one or more of the power amplifice modules fais, the system can continue to produce power if not at fll capacity, oat reduce power if at fll espacty ‘he RF chain in general will be familiar to those knowl ‘edgvable in the design of RF power amplifies of the type used in broadcast transmitters, cellular base stations, and two-way radio systems. ‘An Fxeiter Unit (10) provides @ Jow-level continuous wave (CW) or pulse-modulated signal Its output controls the generator's frqueney, phase, and power output. Unlike most other RP trinsminter applica- tions, RF energy’ systems are not modulated to eary any’ type ‘of information, This allows a beneficial tradeolT of less linearity in exchange for greater elicieney and power oul- put. The present disclosure describes an exciter system that provides several novel and useful capabilities when used as art of a high-powse solid-state microwave generator "The exciter drives one or more microwave power ampli fier units (18). Iti typically multistage and uses multiple power transistors such as LDMOS of GaN types opersting ‘n parallel with outputs combined in one or more levels. The 10 asin of the power amplifier i typically $0 dB 10 70 dB, Providing a continuous wave power output ranging from one {over 100 kilowatts. The oulpu ofthe amplifier unit passes through a dirsetional coupler (20) which samples the for ‘ward power being delivered 10 the load and power being reflected from the load due to impedance mismatch. The forward and reflected power samples are routed 10 the Exciter Unit (10) which has detectors that convert the RE Jevels to digital values. Highly accurate measurement of these samples permits the exciter unit to provide precse- power control, Wo respond 10 varying load mismatch condi- tions. This is advantageous for the adaptive power ontol {unetions. The power output ofthe amplifier is conducted 10 the system's load (30, (1. the applicator), via a waveguide ‘or coanial transmission Tine (38). The generator also has ‘ther important Functional units including power supplies (22), processing unite, Host Computer (25), cooling system (24). ee twill be appreciated thatthe Host Computer (28) can be sgenenlly any unit including, but not limited to, processing "nits (€ ga processor, a microprocessor, 2 microcontroller, ceatral processing unit (CPU), arthmetielogie unit (ALU)) fomputers, servers, tablets, phones, handhelds, ete. The pracessor can be connected 1 & user display oF user inter Tce, such 38 a GUT, tallow for viewing of information. The nput from the user interface (UI) can be sent to a ieroconiroller to control operational sspects of a device ‘and could include a combination of digital and analog input fndior output devices or any other type of UL inp output device required to achieve a desied level of control and ‘monitoring for a device. A user interface is how the user interacts wih a mochine, and could be a digital interface, a ‘command-line interface,» graphical user interface ("GUI") fr any other way a user can interact with @ machine. For ‘example, the user interface module can inelude a display and ‘input devices such aa touch-screen, knobs, dials, switches, buttons, ete. More specifically, the display could be a lig enystal display (°LCD"), a Tightemitting diode ("LED") splay, an organic LED (*OLED") display, an electrolumi- reseent display (*ELD"), a surface-conduction electron emitter display (°SED"), 8 fild-emission display a thineflm transistor ("TFT") LCD, a bistable cholesteic reflective display (ie., e-paper) ete. The device can also include a human-machine interface to allow For the tans- rission of information or settings between a user and the ‘machine ‘The Exciter Unit ‘The microwave generator’s operating frequency, phase, ‘modulation, and power output is established by the Fxeiter ‘Unit (10). Centeal to the Exeiter Unit (10) is a hiah-speod ‘embedded microcontroller (140), As its performance greatly alfets the performance and response time of the system, it is preferably capable of exceution of a minimum of 70 milion instractions per second, The mieracontrolleris com pletely dedicated 10 real-time execution of the adaptive Power contol and frequency sweeping program, s0 itis Lnburdened by other “housekeeping” functions. The miero- controller contains an intemal flash program memory (144), fas well as read/write memory (144) for data ‘The memory includes, in some embodiments, a program storage area and a data storage area, The program storage frea and the data storage ares can inclade combinations of dierent types of memory, such as read-only: memory ROM", an example of non-volatile memory, meaning it ‘does not lose data when itis not connected to a power source), random access memory ("RAM", an example of volatile’ memory, meaning it will lose its data when not US 11,646,177 B2 ul ‘connected to a power source) Some examples of volatile memory include static RAM ("SRAM"), dynamic RAM DRAM"), syachronous DRAM. SDRAM"), etc Examples of non-volatile memory inchude electrically eras- able programmable read only memory ("EEPROM"), fash ‘memory, a hard disk, an SD card, etc n some embodiments the processing unit, such asa processor, a microprocessor, oF microcontroller, is connected tothe memory and executes software instructions that are capable of being stored in & RAM of the memory (eg. during execution), ROM of the memory (e.g, on a generally permanent basis) or another ron-iranslory computer readable medium such as another memory or a se “The microcontroller sends and receives data from several ‘devices within the Exciter Unit (10), Most ofthese devices ‘are integrated circuits which communicate with the mieno- processor via a slandard Serial Peripheral Interface (SPI) bus. In the interest of performance, the high-speed digital VO bus (108) within the Exciter Unit (10) operates at 2 minimum speed of 10 megabits per second, Alternatively, ‘ther comparable high spesd digital buses can be used. “The RF chain within the Exciter Unit (10) is comprised of digital frequency synthesizer (100), an RF source switch (118), a phase shifter (12), and a programmable attenuator block comprising a digital sttenustor (120), and an analog attenuator (124). The output of this RF chain drives the power amplifier. An RF frequency synthesize circuit (100) establishes the ‘operating frequency as specified by the mictooontroller (140), Many such devices are commercially available, An ‘example is the ADF4351 manufactured by Analog Devices, Tne. which can generate an RF output oxera very wide range fom 35 Milz to 44 Giz It internally comprises a voltage controlled osillator (VCO), a digital divider chain, and a phase detector. The phase detector controls Uke VCO fre- ‘quency by comparing its divided-down output to an external ‘ental controlled reference oscillator (110). The operating Frequency depends oa the division rato, whichis transfered into the synthesizer IC fiom an extemal microcontroller (140), The output of the symthesize is a constant amplitude Jow-level output, in the ease of the ADA3SI, of about one nilliwatt (0 dBm). The output of the synthesizer is also provided to an extemal connector (112) for use for phase ‘matching with other generators "The next device in the RF cin isa source switch (18). ‘The source switch comprises switees that are used to select between the synthesizer output ora signal source from nn ‘external input connector (112). The extemal input can be used in applications where its useful to control the relative phase of multiple microwave generators, Example applica- tions include, but are not limited 1:1) combining the outputs ‘of multiple generators where the phase and amplitude of ‘each generator i matched to achieve fll ower output (FIG, 44 and 2) multiple generators driving separate antennas for beam forming, electronic mode stirring, phased arrys, oF any other phase dependent application. The exeiter in one enerator can be used asa master phase reference using the ‘external output (112) which is connected to the extemal ‘inputs (114) of other generators (FIG. 5), ‘he source switch (118) has two other important fune~ tions. First it is used as a modulator for pulse mode ‘operation. There are many’ high-power microwave applica tions where pulsed operation is useful, including microwave indeed plasma generators and certain drying systems. This js practically impossible o do with magneton power 2en- ‘erator. If either source switch is on, the signal from that source is fed tothe rest ofthe excite RF chain, Each switel 0 o 12 ‘has an individual enable input. IF both switches are off, there is mo output. Many embedded microcontroller: have @ hardware pulse wich modulation (PWM) feature whieh is often used for motor speed controllers. According to some aspects of the diselosure, the PWM output of the microcon- troller is connected through enabling AND gates to the switch enable inpots "Ths, the RF power is switched on and ‘lft the PWM Trequency and duty cycle established by the ieroconroller software as specified by the user. The RF switch integrated cirwut is capable of very high pulse rates with a duty eyele of It 100%%. This feature is elective for bouh the internal synthesizer und external RF sources. Sec- ‘onal, the microwave generator i equipped with an extemal ‘molt connection. This is provided primarily for safety reasons. This input may be connected to extemal sensors such as microwave leakage defectors, are detectors, and ‘manval emergency sop buttons. By implementing the onioft function in the RE chain, safety is enhanced because the response time isa few microseconds, which is several orders fof magnitude faster than magnetron-based generators. For ‘example, when a 915 MHz magnetron-hased microwave genenitor is tumed off due to deteetion ofan ae, i typically fakes about 10 seconds for the output power to decrease to ero. ln this time, the eneepy available to the are is about 250 {ilojovles which is more than enough to do serious damage {o the waveguide andor the applicator. According to aspects of the invention, microwave eneray ean be stopped in 10 ‘merosoconds o less, The energy availabe wo the ae 8 only (0.0025 kilojovles, thereby greatly reducing the potential for damage. "The power output of high-power microwave genertors can reach over 20 kilowatis in the 2400-2500 Milz. ISM ‘band, andl over 100 kilowats in the 902-928 MHz ISM band. To achieve precise contol af the output povser needed ia certain applications, the exciter output is prefered to have ‘an exceptionally wide dynamic range, For example, 10 ‘obtain power eontol for a notional system witha maximum power output of 100 kilowatts with one watt resolution, a {ynami range of $0 dl is required with 0.001% resolation uring band sweeping the power preset level is preferred to be achiowed very quickly, eg. on the onder of few :mieroseconds at each frequeney step. Further complicating matters is he fact thatthe gain of the transistors in he poser ‘amplifier varies with frequency, temperature, and other Tictors. Consequently, a fixed amplifier drive level would ‘not maintain a Constant output power when the generator is frequency sweeping. Therefore, areal time adaptive power control system is provided as part ofthe present disclosure This is implemented by @ combination of a high-speed high-resolution RF output power detector, a high-speed wide dynamic range RP attenuator, and novel power control software executed within the microcontroller "The power control function is implemented by using a Aigital step attenuator (120) followed by an analog variable ‘tin amplifier (124), The digital step attenuator is a 7-bit ‘dovice having a 31.75 dB attenustion range with 0.25 db resolution, I receives attenuation level data from the micro- controller via the SPI bus. The data transfer time is less than 2 microseconds, Its followed by a variable gaia amplifier (VGA). thas a gain range of +18 to ~22 dB which is a 40 GB overall dynamic range. The gain/atenuation of this {evi is controled by a voltage input driven by a high- speed 16-bit digital to analog converter, This results in a csntrol resolution of less than 0.001 dB. The DAC receives ‘ata from the microcontroller via the SPI bus, The data transfer time is less than 2 microseconds. Together, the igital step attenuator axl the VGA provide a 70 dB. US 11,646,177 B2 13 ‘dynamic control range. Therefore, the attenvator provides the ability (© contol the output power of a 100 kilowatt microwave generator with less than 1 watt resolution at any power level ‘Another preference of the power control function is fas, and accurate measurement ofthe actual power level a the ‘output of the microwave generator. A dual directional cou- pler (20) is instaed onthe final RF output of the microwave generator. It provides output taps for forward and reflected power samples typically 50 0 60 dB below the RE output level. The Exeiter Unit (10) has «wo RF power detector devices, one for forward power (180) and the other for reflected power (152), The power detectors produce aa ‘output vollage sealed in decibels and proportional to the RF ‘input level. It has a dynamic mage of up to 80 dR, soit ‘complements the dynamie range ofthe attenuator uit. The voltage outputs of the RF detectors are connected to a dual high-speed 16-bit analog to digital converter, This device has two independent A/D converters so both forward and reflecied power is sampled at de same instant, The sample rate of this device is one million samples per second; the resolution is less than 01%, and the data transfer time to the microcontroller aver the SPI bus i less than 4 micro- seconds. The absolute accuracy of power measurement i affected bby many factors, including variations in constrction of the ‘dal directional coupler, connecting coaxial cables, and the sssociated electronic components. The system software includes a builtin multipoint calibration routine where @ laborstory-grade reference power mete is connected to the ‘output of the generator and a series of samples is taken at various power levels and froquencies to determine deviation ‘of measired values from actual, The actual power level of ‘each sample is entered into the system software which then calculates correction evelliciens. The correction data is stored in non-volatile memory (148) onthe Fxeiter Unit (10) ands used to adjust subsequent measurements. This cali bration is typically done when the system is manvfictured and repeated periodically afterwards as required ‘A ettical part of the Exciter Unit (10) microcontroller software isthe Adaptive Power Cont (APC) function. It js invoked whenever the user command # new frequency and/or power setting, and during each step during frequency ‘weep operation, Its maa requirements are speed and accu- ray Recall that the actual gain ofthe power amplifier may vary depending on frequency, temperature, ete. The actual routine is based on a successive approximation method with heuristics for improved performance The Band Map (500) ‘Within the exciter microcontrollers data memory is dats structure, refered to asthe "Band Map” (500, FIG. 3) whieh js-a table dha contains power presets and measured retura Jos data. It is organized and indexed by frequency intervals which vary according to the specific ISM band size and the frequency resolution required. It physically resides in the Data Memory (142) ofthe loal mierocontoller (140) in the Exciter Unit (10), and there is a copy maitained in the memory of the Host Computer (28). The copies are kept synchronized bidirectionally by the contol software. For ‘each frequency step, there are entries for the following data T. Power preset the nominal deseed generator output at that specific froquency. Set hy the user or by an antomatic seanning function, 2. Return Loss: the most recent measured return loss at that frequency. 0 o 14 ‘The retum loss i logarithmic representation ofthe ratio of the forward power to the reflected power. Its calculated by: 145) «10 we Return oss is a usefl single figure of merit for indicating the quality of the impedance match of the generator 10 its Toad. The size ofthe Band Map (500) can vary and depends on the size of the ISM band and the Frequency resolution specified hy the user. Here are some examples which assume each one table entry per frequency interval and utilize 10 bytes of memory per eaty 2400-2800 MHz band using 1 MHz steps-101 diserote Iroquencies*10 bytes=1010 bytes 2400-2500 MHlz band using 100 KHz MHz steps=1001 iserte fraguencies*10 bytes-10010 bytes 902-928 Milz band using 100 KHz steps-261 discrete Aroquencies* 10 bytes-2610 bytes The maximum size is limited only by the amount of available data memory in the microcontrollee An important ‘eaJeoll in sizing the Band Map (500) is tht the minimam ‘ime needed to sweep aeross the entire hand depends on the ‘oumber of entries in te table. The typical minimum dwell time for each step is | miliscond, Therefore, a Rand Map (S00) with 1001 diserete frequencies will have a maximam speed time of about one second. An example 2400 to 2500 ‘MHz Band Map (S00) has 1 MHz intervals and therefore 101 entries, With a 10 millisecond step dwell ime, the entire band ean be swept in 1.01 second. The microcontroller has a high speed-data connection to the system’s Host Computer (25), The eomputer runs bost software that exchanges data and sends high-level com- ‘mands tothe software running on the mierocontoller. Data ‘within the Band Map (S00) is continously transferred up to the Host Computer (25) to update a graphical display of a copy ofthe Band Mop (500). Similory, the user may modify data enties within the Band Map (500) on the Host Com puter 28) individually or using various interactive tools provided in the User Inerfice program. The modified data ‘is rpidly transferred down to update the Band Map (S00) ia the microcontroller. The host program on the Host Computer (@5) provide functions to load and save Band Map (500) mages to mass storage, and to transfer entire pre-defined Band Map (500) to the microcontroller. ‘As disclosed herein, intrnsie network analysis is a novel ‘anc important aspect of the present disclosure, The system provides the functionality of 8 one port network analyzer. It Js capuble of acute real-time measurement of SI aad S21 S-parameters, and of graphically displaying. thom plotted ‘ver frequency. The system includes all the elements nee- tessary to implement # one port network analyzer inciding: calibrated and frequency corrected signal soure, precision iretional couplers (450), calibrated, frequency corrected jah dynamic range ogarthmie power detectors 10 ‘measure incident and rellested power (150 and 152), and software to calculate and display -parameter plots. ‘Static and Dynamic network. analysis is novel singe it allows the user and/or he system sel to measure and adjust the impedance match ofthe load to the system, It also allows the system to automatically adapt to changes in matching of the generator to its load while running. Often the character istics of the load, and therefore the applicator impedance, US 11,646,177 B2 15, will vary significantly uring sytem operation due t ehang- ing properties of the load material, This has been a Tong- standing source of difficulty or uses of microwave heating systems, particularly when using magnetrons. A siatie network analysis funetion is provided in whieh the Host Computer (25) commands the Exciter Unit (10) 0 perform a low power frequency sweep across the entire band teach frequeney corresponding to each entry in the Band “Map (500), The return loss at eaeh frequency is stored in the Band Map (S00) table. The return loss data is ploted on the user interface Bane Display, which provides the fanetion- ality ofa one port network analyzer. The system can execute a single or continuous sweeps. The network analysis i of treat value to the user: for ereation of a Band Map (800), ‘manually oF automatically, capable of maximum power dalivery to a Joad with varying load impedance across the band; for testing the transmission lines and applicator, and or manvally adjusting the applicator loads or tuning ‘The algorithm for the static network analysis load scan is 1 fallows: |. The output power of the system is set toa low (safe) level, typically 10% or less ofthe rated output power 2. The operating frequency is set tothe lowest point in the ISM band. 3. The incident and reflected power are read, and the secur losis calculated 4, The rete los is stored ats coresponding entry inthe Band Map (500) ‘5, The operating frequency is inereased by the current frequency interval 6. IF the highest point in the band as not been reached baach to step 8. 7, Load Sean complete 8 The uplated Band Map ($00) is transmitted to dhe Host Compute (25) where ts plotted on the user interface. ‘The Host Computer (28) software has fanetions that allow rule-based automatic wansformation ofthe retin loss data to poster presets, There are also functions to allow the user fo manually edit the derived Band Map G00), At the end of the sean, the memory array will contain a map of the return loss across the ISM band. Typically the return Joss Band Map (S00) will contain. several local ‘maxima and minima which indicate at which frequencies the best and worst matches occur between the generator output ‘and the load. Recall that the frequeney sean ean be per- ormed very quickly For example, a full ean ofthe 902-928 ME band at 100 KEY intervals eequires 260 samples. The ‘entire sean can be performed in about 250 milliseconds. This js sulicienly fast such that for systems that may have ‘dynamic Toad characteristics, a load sean can be performed, ‘a regular intervals to adapt to changing load conditions ‘during regular system operation, Because each transistor is ‘equipped with a conservatively rated circulator and load resistor the system ean easily with stand severely mis- matched output impedance, including. dead shorts, when performing return loss scans at low power ‘Dynamic network analysis is performed while the system Js generating RF power ina swoep mode. It will be appre- ciated that-dyoainie network analysis with high power microwaves has not been possible previously. This is novel ‘and important since small signal measurements are not necessarily reliable predictors of large signal behavior. As the Fxciter Unit contol fimware performs each frequency step, the incident and reflected power are read and the return lost is calculated, The return loss Values are stored 0 o 16 ‘temporary butler whieh is read asynchronously by the Host (Computer (25) where it is ploted on the user interface Band Display, ‘The Exciter Unit (10) Automatic Power Control (APC) ‘control funetion provides dynamie power contol and auto- ‘matic tuning. This function is executed in real time by firmware running on the embedded micrecontolle (M40) in the Exciter Unit (10) implements a control loop utilizing: the digital step attemuator (120), the variable gain amplifier (124), feedback Irom the forward power RF detector (180) and the Band! Map ($00) table. The digital step attenuator (120) is used for power couse setting, and the VGA (124) and its D to A Converter (126) is used for fine adjustment siving high speed power control with a dynamic range of ‘ver 60 dB. The contro algorithm has thee operating sates The first APC state isthe initial attenuator setting. which occurs whenever a new output power setting oF a new ‘operating Frequency is commanded (ic. step while fre {quency sweeping). An initial value for the digital step attenuator (120) is estimated by calculating a value whieh provides @ power output just below the target power level ‘The VGA is subsequently used for fine power adjustment. ‘The RF power detectors uilize a one mega-sample per second, 16-bit analog-to-digital analog converter (186, 184) {o provide a comparable dynamic range. The second APC state is the fine power adjustment. An initial value for the VGA (120) is estimated by calculating a value which slighiy less than the difference between the current mea- sured output poser and target power level. This is repeated ‘until the target poster level is reached, typically with only’ a {ow iterations. The target power level can be reoched quickly, particular in fist frequency sweep modes. The igital step attenistor (120), the variable goin amplifier (124), and the A/D converter for forward power RF detector (130) all connect to the microcontroller (140) using 2 SPL serial data bus operating at « minimum tcansfer speed of 10 Mille, Fach data transfer takes place in about 3 mierosee- fonds, so the time required for each iteration of the contol loop is about & microseconds. The overall time required to seta new power level typically takes less than 60 micro- seconds. This is extremely important when the system is in band sweep mode, as the power may be adjustod every nillisocond, The third state is power evel maintenance. This isa loop that continuously compares the actual output power to the preset power level, and adjusts the VGA up or down { maintain a constant power level a the et point. Another important componeat of the APC funtion is gain equalization to compensate for characteristics ofthe power ‘amplifier transistors in the Solid-State Power Amplifier Units (300). The gain of RF power amplifier transistors varies with opersting frequency and power outpat. The ‘change in gain across an ISM band ean be significant. As @ result, during frequency sweeping operation the system power ouput will change witha specific setting ofthe poser control attenuators. In the prior art there have Been several techniques used in solid state power amplifiers used fr gin equalization (see U.S. Pat. No. 7,608,652, which is hereby incorporated by reference in its entirety). Generally, these pethods involve sampling the output power level, averaging the result, and applying it to an electrical closed loop 10 adjust the either igput deve tothe amplifiers or the transistor agile bias. These techniques were developed for solid state [RF amplifiers which cary a modulated carrer, Given that in [RF energy applications the amplifier processes an nmod- Tated CW carter, there is a simpler and faster means 10 provide equalization wilizing the embedded microcontroller fand the existing APC function. By itself, the APC routine US 11,646,177 B2 17 will eventually corret for gain errors, but at the cost of power seting time. To eliminate this dely, the system Includes Gain Equalization Table in EEPROM nonvolatile memory (148) on the Pxciter Unit (10). When a change in frequency or power setting occurs, an adjustment value (postive or negative) is blained from the table and addled '© the power conttol attenuator setting Transistors of @ specific type tend to have very similar requency/power/gin ‘characteristics; 0 typically, table need only tobe initialized ‘once af the time of manlacture, However, a self-calibration ‘ean be performed more often if required ‘As disclosed herein, dynamic frequency sweeping is «| novel and important aspect of the present disclosure. The basic openitian ofa frequency sweep is stepping across the ISM band at discret freqnency ineremtents. The sep rate is variable and ean be set by the user from 2 minimum of 1 nilliseand per step, with no defined maximum. Starting at the beginning frequency atthe band, the microcontroller fist sets an interval timer tothe specified step interval. ‘Then it eis the Frequency synthesizer to the current frequency. Next, it sets the phase shifter to the eomesponding vale from the Band Map (800). Next, i obtains a power st value fom the corresponding Band Map (S00) table entry and calls the Adaptive Power Control Routine to establish that power (subject to remm loss adjustments). Finally it sends ‘ata including current power output and return loss to the Master System Control Computer which updates is copy of the Band Map (800) and graphical use interface as appro- priate. ‘The software then wats for the interval timer to ‘expire. The Freqneney is incremented tothe next value, and this entire process is repeated until the end ofthe hat is reached. The current working frequency is then reset to the beginning frequency of the band and the round-robin cone tines indefinitely, There is special casein the frequency’ swoop routine to ‘elite a frequency hopping funeton, I'he current power preset value in the Band Map (800) is ze the RF output is ‘ured off and sweep routine will immediately skip to the next entry with non-zero value. If» Band Map (500) is built with adjacent groups of ze and other groups on ron-reno power presels, the system vill output power con- tinuously only in the selected frequencies or bands. This is particularly useful when the load (application) has favorable Impedance matches or energy distributions only at certain Trequencies or frequency ranges ‘An Adaptive Power mode of operation is provided where dynamic adjustment of power lative 10 a preset power level occurs while the systom is generating RF power. The system therefore is able to safely deliver the maximom possible average power to the load over a range of frequen- ‘ics over time even as the impedance of the ood changes Significamly. This function is executed in real time by nnware ‘on the embedded microcontroller in the Exciter Unit (10) At the beginning of each frequency’ stop ‘during a sweeping operation, the Fxciter Unit (10) changes the frequency of the digital frequeney synthesizer to the new frequency. Next, the microcaatroller reads the system's forward ‘and reflected output poser and calculates the instntancous retum loss value, which is compared to the Adaptive Ret Loss and the Absolute Return Loss limit ‘ettings. 1 thea invokes the APC function using the poster preset value obtained from the Rand Map (S00) table as Tollows: a the fll preset power is set ifthe measured return Joss is grester or equal to the Adaptive Return Loss Limit; b) zero power is set and the current Trequeney step is terminated if the measured resum los is less than oF equal to the Absolute Retum Loss Limit; or e) Ifthe measured 0 o 18 return loss s less than the Adaptive Return Loss Limit and hove the Absolute Return Loss Limit, the power preset at that frequeney will reduced by a user defined dS power amount per dB of measured power below the Adaptive ‘Ret Loss Limit, Asa est full power to be generated st all frequencies above the Adaptive Return Loss Limit, at proportionally reduced power at frequencies below the Adeptive Retum Loss Limit and no power will he generated at frequencies below the Absofute Retun Loss Limit. This Teature ean also be uscd in single frequency operation, For applications where the generator is used in a single requeney mode (aot Trequency sweeping), a one-hutloa auto-tune function is provided. When the use elcks on the Best Frequency button on the user interae display, the system performs a static network analysis retam loss scan across the band. The result is plotted on the Band Display. The Host Computer (25) then searches for the frequency where the maximum return loss oceurs, and sets the gen- eraor’s operating frequency to that frequen. Solid-State Power Amplifier Units ‘Microwave power transistors providing about 300 watts inthe S band and 750 wats inthe band are commercially Available at this time, Its probable that overtime the poser handling cepabiliies of the RF power transistors will ‘ncrease as semiconductor processes continue to evolve. The technique of paralleling power transistors in phase or in quaatature phase by splitting and input and combining ‘output has been wel established in the poe art and has been cused for many year in radar, electronic warfare, solid state ‘ado and television broadeast transmitters (see Contantonio, tal. pp. 370-375; Walker p. 242; and U.S. Pat. No 9,595,930. all of which ae hereby incorporated by reference in their entirety). A variety of methods of implementing parallel amplifiers have been implemented in the past. Aspects of the invention significantly improves this tech- rigue by adding automatic phase and amplitude alignment in 4 requeney-aile system which is important st microwave ‘operating frequencies, This rece losses and heating in the ‘pat combiners and increases the amplifier efficiency. The Solid-State Power Amplifier (SSPA) units (300 and FIG. §) are built around a plurality of RF power amplifier transistor pallets (400). A pallet comprises a single power (ransistor and associated components mounted om a cireit board which is atacied to copper heat spreader and isin turn routed fo heat sink, The pallet may optionally contain river transistor and possibly a eiteulator with a load resis tor. Like the combiner used to combiner the SSPAS, the PA pallets (400) should be phase matched and amplitude bal- ‘anced 10 drive their combiner (440) with maximum el ciency (see below). The pallets are installed in the SSPA (G00) as shown in FIG. 8. Currealy, a configuration of four pallets is optimal with respect to power combining. thermal ‘agement, and conneetor eos. Aemative contigurations fof fewer or more pallets are possible. A Power Amplifier (Control Unit (480) interfaces to the pallets and provides RE rive and control funetions for the pallets, \ dedicated microcontroller (460) provides local management of all elements ofthe Power Amplifier control ciruitsinelding: DC power monitors (470) which monitor the drain voltage and current ofeach PA transistor, and the PA Bias Controller (480) whieh provides active temperature compensated bias- ing for each PA transistor. The RP section receives input {rom the Fxeiter Unit (10) via the input power divider (310), ‘The RF signa fist passes through a phase shifter (410) and 4 Variable attenuator (418), respectively, and both are eon- trolled hy the local mierocontrler (460). The devices are used to phase and amplitude match the output of the SSPAs US 11,646,177 B2 19 (300) tthe other SSPAs (300) in the overall system. As is the ease with almost all RF combiner, itis important that the power at each input port be matehed in phase, and to & somewhat lesser degree, matched in amplitude. This is ‘explained by Melton, et al, in US, Pat. No. 5,561,395, herein incorporated by reference in its entirety, which describes a static method of phase and amplitude matching, Phase variation of less than S-leyrees or amplitude variation ‘of fess than 5% will not significantly reduce overall come bincr efficiency. A novel capability ofthe present disclosure is yain and matching of the RF power transistors. It is a characteris of both LDMOS and’ GaN transistor that the gain of each “device varies primarily wih temperature and frequency, and additionally de to differences in characteristics of associ- ‘ated components (especially capacitors), printed circuit boards, and the exact mechanical assembly ofthe RF pallets (400). The gain can be adjusted by changing the gate bias vollage which is established by digita-to-analog converters (480) which arecontolled by the microcontroller (460). The ‘drain current of each PA transistor is measured by the DC Monitor circuit (470), comprising a current sense resistor in the drain power supply line and a current monitor integrated circuit device which provides an accurate digital value ofthe PA drain current to the microcontoller (460). The dain ‘current is directly proportional 0 the RF output of the ‘device. During system calibration, the microcontrler ean measure the drain current at various power levels and frequencies across the ISM bands. This data is stored and used t set the baseline DC bias level, During operation, the baseline bias value is changed dynamically based on the measured temperature of each PA pallet. "Next in the RP chain is an amplifier to compensate for losses in the various devices, followed by an n-way 2er0- degree power divider that distributes the drive signal to the individual PA Pallets (400) via a Monolithic Phase and Amplitude Controller (MPAC) (404). An example deviee is, the PE46136 manufactured by Peregrine Semiconductor, Inc. Although MPACs were developed for a completely

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