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SEMICONDUCTOR TECHNICAL DATA

 
  

10 AMPERE
NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR
equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON
power switches. 140 VOLTS
• Collector –Emitter Sustaining Voltage — 117 WATTS
VCEO(sus) = 140 Vdc (Min)
• Excellent Second Breakdown Capability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 1–07

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TO–204AA
(TO–3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage VCEO 140 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 160 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 7.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 10 Adc
Collector Current — Peak 15**

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous IB 7.0 Adc
Peak —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C PD 117 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.67 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
ÎÎÎÎÎ TJ, Tstg – 65 to + 200 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
* Indicates JEDEC Registered Data.
RθJC 1.5 _C/W

** This data guaranteed in addition to JEDEC registered data.

REV 7

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
2N3442

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage VCEO(sus) 140 — Vdc
(IC = 200 mAdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO — 200 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 140 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEX mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) — 5.0
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO — 5.0 mAdc
(VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, VCE = 4.0 Vdc) 20 70

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, VCE = 4.0 Vdc) 7.5 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) — 5.0 Vdc
(IC = 10 Adc, IB = 2.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage VBE(on) — 5.7 Vdc
(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (2) fT 80 — kHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain hfe 12 72 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
* Indicates JEDEC Registered Data.
NOTES:
v
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
2. fT = |hfe| • ftest
PD /PD(MAX), POWER DISSIPATION (NORMALIZED)

1.0

0.8

0.6

0.4

0.2

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

2 Motorola Bipolar Power Transistor Device Data

 2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION

20
10 µs
10
There are two limitations on the power–handling ability of
IC, COLLECTOR CURRENT (AMP)

a transistor: average junction temperature and second

7.0 dc
5.0
breakdown. Safe operating area curves indicate I C – VCE
limits of the transistor that must be observed for reliable
3.0 30 µs
operation, i.e., the transistor must not be subjected to
2.0 50 µs greater dissipation than the curves indicate.
TJ = 200°C 100 µs The data of Figure 2 is based on TJ(pk) = 200_C; T C is
1.0 1.0 ms variable depending on conditions. At high case temper-
0.7 CURRENT LIMIT 100 ms atures, thermal limitations will reduce the power that can be
0.5 THERMAL LIMIT @ TC = 25°C handled to values less than the limitations imposed by
SINGLE PULSE second breakdown.
0.3 SECOND BREAKDOWN LIMIT
0.2
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. 2N3442

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

400 1.4
TJ = 150°C VCE = 4.0 V
200 1.2 IC = 1.0 A 2.0 A 4.0 A 8.0 A
hFE, DC CURRENT GAIN

100 1.0
– 55°C
60 25°C
0.8
40
0.6
20
0.4
10
0.2
6.0 TJ = 25°C
4.0 0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 3. DC Current Gain Figure 4. Collector–Saturation Region

Motorola Bipolar Power Transistor Device Data 3

2N3442
PACKAGE DIMENSIONS

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO–204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B ––– 1.050 ––– 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 1–07
TO–204AA (TO–3)
ISSUE Z

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4 Motorola Bipolar Power Transistor Device Data

*2N3442/D*
◊ 2N3442/D