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    Anh Tuấn
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    This paper describes simulations of metal-oxide-semiconductor (MOS) devices using the MEDICI device simulation program. The authors simulate the electrical characteristics and gate/drain properties of a conventional bulk MOS device under various bias conditions. They also simulate carrier concentration profiles, the effects of device parameters on threshold voltage, and construct a complementary MOS (CMOS) structure to verify the MOS design. Simulation results for threshold voltage are then compared to calculations from conventional MOSFET equations.

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    This paper describes simulations of metal-oxide-semiconductor (MOS) devices using the MEDICI device simulation program. The authors simulate the electrical characteristics and gate/drain properties of a conventional bulk MOS device under various bias conditions. They also simulate carrier concentration profiles, the effects of device parameters on threshold voltage, and construct a complementary MOS (CMOS) structure to verify the MOS design. Simulation results for threshold voltage are then compared to calculations from conventional MOSFET equations.

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    1 views1 page

    Citation 287975490

    Uploaded by

    Anh Tuấn
    This paper describes simulations of metal-oxide-semiconductor (MOS) devices using the MEDICI device simulation program. The authors simulate the electrical characteristics and gate/drain properties of a conventional bulk MOS device under various bias conditions. They also simulate carrier concentration profiles, the effects of device parameters on threshold voltage, and construct a complementary MOS (CMOS) structure to verify the MOS design. Simulation results for threshold voltage are then compared to calculations from conventional MOSFET equations.

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    Bhuyan, Muhibul & Khan, Sher Shermin. (2005). MOS device simulation using MEDICI.

    Journal of Bangladesh Electronics Society. MEDICI is a powerful device simulation


    program that can be used to simulate the behavior of MOS and other semiconductor
    devices. The program can be used to predict electrical characteristics for
    arbitrary bias conditions. In this paper, various characteristics of the
    conventional bulk MOS device have been simulated using the MEDlCl.
    Gate and drain characteristics, mobility and carrier concentration profiles,
    effects of various device parameters on threshold voltage of MOSFET are simulated.
    Finally, a CMOS is constructed and simulated to verify the MOS structure. Also,
    simulation results of threshold voltages are compared with the calculated results
    using the conventional bulk MOSFET equation.

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