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Cse210 SP23 Ct1solution (Iub)
Cse210 SP23 Ct1solution (Iub)
Class Test 1
CSE210
Electronics I
Department of CSE
Independent University, Bangladesh (IUB)
26th February 2023
SOLUT
Q1 Q2 Q3 ION Q4 Q5 Q6 TOTAL
NAME:
ID:
When a PN-Junction is formed, only one Fermi Energy Level can exist. Band-
Bending occurs to keep the Fermi Level Constant.
Q.3) What happens to the width of the depletion region in (i) Forward Bias and (ii) Reverse
Bias? (2 marks)
Q.4) Gallium is a Group III element. If it is used as a dopant for intrinsic Silicon: (3 marks)
i) Will it introduce an energy level near the Valence Band or the Conduction Band?
ii) Will the newly introduced energy level be filled with electrons or holes?
iii) What are such types of Dopants called?
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Q.5) Answer the following questions regarding n-type materials: (3 marks)
i) Majority carriers
ii) Minority carriers
iii) The name of the energy level introduced
Q.6) Given a diode current of 6 mA, Is = 1 nA and η = 1, find the applied voltage VD at 25°C.
Boltzmann constant is 1.380649 x 10-23. Electronic charge is 1.60217663 x 10-19 coulombs. (5
marks)
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