ft Powe Electvonics Terk bow Kerevenles * a — MH Rowhid 5 \ 1 2+ Power EeHHONIS Kel Nichan 3 Powe El U0 echronica wy Ps Bimina Power Electwontes : The technology associated with 4h 8 Control ¢ electric power using Coutces - Mobile changer ° 930, Ac- DC DC- 0c " Convertens convedkey | VV N v iient — Convextsion gerniconductor AC Sour Reckif tery stepdown Applicakions * sy Electsiic Vekicles . eed motor Drive ay Adjustable Sp 2y puststhuted 4 ex« Photo vO ey trankeiiston CHu0C) enenakion CRenewable energy Scustces) lbatc CPV), avind energy » Fuel cells v Nee YY Bulk pow Ha > Or cy Power Suppl cy Lightning ¥y Electaic welding ay Ackive files ay igh Frequency induction heating:PUNIT- I Theory — about Semiconductor , TRIAC, DIAG y GTo J i GTOSCR UNIT-2 Rectifiers Cac- oC) 4-6 Fully controlled B- Fully centrolleal gemii— Controlled Semt- Controlled e pe eet 2, RL, RLE ONIT- 3 ac voltage controle 4°? @ 3-¢ pc fecek + variable, OC sexing angle ‘at | conveste | Chopper! 2p —» Step OP variable — _» step-down untT-S modulation ~~ inde Powel Ele Conics lineay Electonics +4.3V, £5V, £ISV KV pe sma» A | Mv 20 =thousands vl Amps | » power diode , power ert pour MOSFET piode 5 BIT, MOSFET@solakion cov) Aropltticaktor 1 } \ _| sensov/ |, I Reg inernerths { tool chona.cbeulatta 2y Sounce — BC Sounce Load - Induction motor Based 0D 4Y Lack - De MOBY Source - AC supply tdeal switch Te tng intke vou a VYV20 os + RQ SS OFF > T=0 . Conduction loss = 9” Ron Ton = TOREPractically * 6, oN = f= ingtnite vel-age Nowe N= ove b2N = finite CMA) g,ofF + 2 Ve Sinike value i) VA | 1A fi |v st Pouse clement, Ro bo & pceiue elernentt eu git oc — satusotion cont) ae) Cut “OFF coFF) Ne : ce pcene state E t eitten J . colle ctor & Press = Vee “ec : _y Volkage divides acta! be 2, 4 MAUtONCes ‘ a >. posing & suite “on” EOF &u* voz TON x Ving oo we —Advantages Cpowen ECMONIES] Ae High extcce \ 2: Size > Cost 9 woeight awe as Low os posstble- rreliatot ity 3. Hig? 4. Haxnoonts Ancneased heatking Qa ay Taterperence awith other thei, cancel each “er equip Us Corarnubitten msucs 0 y Lie Span 1X rove pbs advay ager t 24, gamonic 4 5. wae {owen distortion a Hasirnontcs — ORE infieduced to powey cectHonic devices powe a Heat * —y junction temp FT | ento gyatern Aur dina Power diode =, o— P+ —PIs] oo A K J200v, 30°08 Naw vo, F& r diode => Bdeal Sesiteh Var < » RB SV Ven fe Vegn ~ Peak revere epetative voltage prv - Peak — tnveuce Voltage4 i. tacreares CxPOP enti okmost Un } e” VAK YO Teutin —1v voltage | voltage “that a dfode can blac. | > maar) | Vem Teerit men _ power limit ; Types af devices Based on Clegree ® uncontrolled gwttch + Ex? Dt o—pft the twin ON % OFF the chau * £ oy = qe 1O-0:F o Ce dca OF aan() semt- Conteclled Contxolted -guiteh | gat eR (on) Thysliter eR SCR is ON Vax 70» 1g 7° athe tiene ak which SR can be G Nn’ cos), be controlled by “Gere: 7 ye TUM be controlled | n OFF cannot = as Busted "+ i aes - @IT, MoseeT , LaBT Gero > ect a oFF we 6 applicatio nt Nose © waned 7 high volkage corso led * — = x ER Us oe we fot Low voltoxt app | ons Fully tk 4 : ae ape wee Fully contewlled Zwitches - * most e 2 (Reerie Recovery ohasiartentsttc.) Powe proce * tay = tat ty +6 tu cuporent ee Lyx negative ran to LD: iv ta —7 ty ae fom maw Ly EELAome ttme +o enn A notes minority casuuens takes avith opposite. major cant AHLCA, neutualiged . ‘ ‘ Qax — evertwe vrecovesing change avs 3 tiv ty. : Chausipication of diodes * 4. Genexoh purpose dtoder CReckipen olodss eslow eet Is axpplicecttor’ Sot _y guitab 6KY > Hoos How, try be 2S5p5 Hel » g- fate =| : High- Feeqeeny odes * _y suitable 4° high - Frequent (5nvs 304) sy, Low oN erate voltage doer. 3 schottky diode * crmetal +0 semi.conducto™ ) : Pluminituny _y Suitable fox high faequency applications 4 dop’ j Case____~ ee roporbant pedications 4n g- Revesue blockin wolkage ( 3. on- stote wattage Cpowe ent ratin Ceue aking) Pvenage ferswwasol cusuient (mon cuswrent diode ® v) u: Susige CH 5. Ut aaaking 6. Revenre crecovestlng time (try) wu us speed u& high sen (ype) gilicon Contaolled Rectty tex wULON oe e ane thee termina C tary x thet anode cathode , ate] Toh kh A -—Calaleisr°* uy thin and heally doped No- Ro Layer ia thickes and deghtly cloped | nyo ON" aa thickey and Ws coped | PR - Arlo to Po \ | foe aa Yoo 4 Ss | af v7 | 4 Fee Tk | f \- { \ ] = 7 Lj _vet Chanacteristics - ey - exw breakovet voltage VFo — Reverse breakover - voltage Ver the minimum anede Cuent is called or ed Cuswient (Se) “to ANON “the SeR> lalehing Gasient Holding Cawyent (Ly) “the mintmum anche cuxstent belo which CR , a Called O& Holding quent > % SCR & @ “aking denice deter” One scr 44 boned on, gate hor = a- Fintng angle e- extinction ongle S$ — Conduction angle = prow ren Diperenk moder in Sees . 4. Foxwasiol Blocking mode * r N a ReVeKE Blocking mode: re 3 Forward cenductton Mode * | Forwaxd Blocking mode % | “she ece & 4 5 rhe - i WwW FB mode When Vpn 7%? at +hy tme +J3 ane Forward blared { T Bw Rene lotased sa. Amal dtakage cwurent tows -s sce UW in Orr Stale: %__ 4 a et ScR % HRB mocle aohen VaK<° pt thin instant Ty Ta HE VVEHE blared Tr YW Fosward lolared - +3 6 small Lcakay Cusuent PLOWS - + sca Ww to OFF = Stale. , > TT blocks the ree bolecking voltage Fwd Conduteton rnede’? Reseue Blocking mode * oy “Ae YO Tio Te aSy ONC Forward blared | sce dk in ON stale shee asie, two ways te tusn-on the SCR * se Ftace rnethed $07 Stave (ory put SCR in conduction mode 4 by appying the Vax more nan “eo the” Depletion Lawes da losokKen and SCR Conclucts . a Second method is bY apply tn the Gale Cuswuents — ural breaking the depletion Lauer ee=> By tnexeasing Tg { gate “Cusorent) a tw depletion Yes — checereanes and Conseepu teats to axclandhe — breakdown y ot q,. Two- Tramutor Anelogy Te } P - | Fox any Acraunaiatos te Kos Jez KIe+ Tees " dee th whee, ae 7 X= Common boxe Cuspent gain g i Tegge Collediox tnse—leakoge 446) Z cuswent a be A Tq Tr 7 =T Foy transits Ti" are k Dey = % Te, + CBO} Toye AT + CBOs —o Cot Inamuts T * oo roe Ten = 54% ees. Dee GIKt (802 —@ enen Be = Tarte | Genel for T)% fe\= Te tTe, Ter Tarte (io Le 2%, © lial—_— Substituting values 4 @%t 6 on @® 50, t, = (%Tat Bor} + (or Tn + C802] —® For T,* Te, = Dp, t+ Ter + (i 2er* tex} ly : Tyee Tere Seat Ty Te = Mt —© 10 @ : aust touting © 4 Lat R22 +6802 Tp = KER + COO Tr = Cn (H+ &r) + %27g & CBO, C602 _ tp (mvt ta) ~ Xp Pq + COT CBO> Tae x ft + C80, + 6802 (1— (xi +%2)] > 4 Ig + Ima? a A amal gate cuuient meu, in “ange arode Tot ah %&T So Cx, +2) Positive | see tat Feedlook . | " aod Regeneration ‘ sy 7E | Ms (a Far) eppreaches to unity the ancde apurent ta tends to 0 , but proctely be &, as Tq ix detownined by EEE = ee oa Jo awit not. ay, . 2 Tk triggering YF we GV A fe dy : | ak y** ee fe ded Ja fi ) o eo +S, 2 = ae + val saad To J }i2 % a2 Ge a é = ¥ g ce specific value chaviging cxoent wll incweare and SCR will wn on > So, Emmure that av[at Malue ye dus than | 4 oe ia 4 Uy. Temmperalane datqqeuing | > junckion deropenalane {ACHE 5 Ane volue 9 FeO TAaceose | spa OG we Fnenemae Zcao & 1cB0r almost dows | 5. Lf dpigqeut ge eG Baer > wed 10 suvoe applications >] | - LascR Cli activated SCR (Light ) syFive iggeily methods * s\y owas “eriggeaing ay Gate tlggony ay ae eriggaig uy Ternpeneune xiggeting Sy vighve extgqeting - (Tux oN % Tun OFF tes ‘ Susitthing chonattents chenasttntstics) v4 wo qetc ee" ent oO al Pau Wo ‘ 1 Ja 4 yy : = 4+, | Recowy) Sar) dk Me 4 Tat r744 ona Sr \ L Vtg ty itp ti \t t owe) OV VQ, * tome taken by anode cwurent +0 [noreare fom Forrouasic leakage cuwsunt 40 0! Sa |FC pall Grew sess, s applying high Vak ¢ high gate Grn - dil dime Hg) deceaer 9) \ Rise tire Cty)’ a ~ ; sient to Yeaut yoken F841 anoole cwere , + Tme | oatq Peon o-) 2q u ty reach _s Teme taken for anode chage ova fy OF va z ° 5 ay More powet tocg duting rise Hoe —_ dq Yrists Rienulfaneously « Va & = tr. Iq T Heme (bx)! Spread STE a Ken for oP tm - creath An Ly Time a! Sao oq Ta - ‘onstale “3 Teme taken 0 a ee ep um =o Vol voltage dep | ca ty tele CMS | and elections | » punt tes , LA hls aL vite | - Musecpea out quo uly laufen wi i and h- layer suapectively « Dwi tan $ CU, CAME Xn jundton I, > quill be 4 crecornbined ang get eitAUHO . Ment 1 tye trvt tay & SCR # tc ‘we the “total Gruit tuan ore time % 4 Pox Riodle Commutation +. 7 tay | “Thyristor Protection Av protecton - High ov tuxn-on SCR * otectton a 70H ae eae Cale triggedg) Typtet values - (20~So0)V/ psee N-> Vak Concha voltage) ge AL protection - High di teads to localised heating | hotspots L-> anode cwurent High Fe di cal ser. ts, | — Suber (av) ivauit at | oe enaeee [Rs RL. Rs iy - placed ty deter Cirtuit Cs 0 lénét- dischvige Cul cusuient Hlowing thotough SCR - SS OE eee 4 |pesign 4 Snubbey = chrcuit rita Awitth ON the civ t 5 um Abort dv cutt Vg= (Rst+ R jit La on 4 (Rs +R) = V5 - bat ak : a as icy -anhet & Rest Ry t fe VS a. g-e fe RstRv, ak t ae. NS atic _Rs+Re . dk RstRe x L L “ et di Vs, € Ic ee dkVa * i Rs | Ava Rs da “de dk i ” ge @n20 Cornpaxing with St 2§ Wns @ne= re —Sa So, 2¢ Wn & = Ks x t | ~ Re = = r 2b Te 7 y Rs 29. b Abyetator a placed between a cme pe voltage Aone zuov Teultive Loadl ,e, she spechied Limits for. Ete ae bo A | psec R 300 V /ASEC 4 ape Hep +he vote tn inden “Ors. a Vp = mow y Re . du . Zoov| asec ae. goals > ae ot ses : | | t= Ms = ue = YH, | a. © | dE Jeon (MAE) cae | mia Rg Mak | PL 7 Rs> 2 qe (difAt) nan faxio* 200 "3 ce 2 BOC 2 BL, 58 LxOS * |S . C= Ol6phF |— row bette circuit Consider For bee Rg BX» cs 2 OPE | Rg 2 24 e 3: = [Rage | . © 1xIo i it Anuibbet Grew otection (toms) breaker - OVO load pv Cereubt R\- 40 Ltonit * the go Zp over volkage protection Aignals Cspurtious) ~ bo boypaws high Fyequence| cde to Stray . magnetic feild) HS = heat sink for thea protection =“vauistoy- voltage dependent susltoy unl voted “voltage - open Chrauit (eyona vralect voltage - short Crcutt series and parcllel openation af SCR’ KD aces ase connect in aerfex to fn cereus the cvatinlg o system Cateing) | + av Seek ose connected tO pasallet 4o incuare the cuvutent Capacity of V- oom she ca 4 seg ging? EE Seting aficienty = Actual voltage [eating 4 string Number GF SORE y volbage [rating oy ZV in sods . eg Pech el nent a Te Uw A MEAL C1 degeee utilization | x pexoting Falter (orf) = I- string apicency te Ba measune | degtee welianility « | + Do Ip 1000S 3005 | pe ye | | % | TH Law ‘ Yeon 0 veo\ Us = 2.000 So : 60 ‘i SCR voltage rooting ={000V vu wiy Soot ists jooo * & ~ 700 static ve chaxaclor - 1 4Vy Stelog efiiercy = let== — a Highe +he leakage teAU Fence 4 CR, Mon can (hock more voltages | SOR TH? may plockK = MOTE voltages yy tooov ub mn darnerqe the thyristor sy scg’s hove eqpol nde voltage clinteibutior | sn a Aeing 4 have tdenttcal (2-¥? a ghanacki1 At le ft Va. Me > Leakage rreatatance gcv’s 5 2S c 2 Syn Ipo ot) Bin! aaa Rs Rs Vs, Re = Static equalising areriaror 2 @7-T ne (=: sting avment a £y + Lorn Ses a Con apply KVL Vee HRs * Cn) Pr Rs | - P, Rs + cn-') (@ - Dora) Rs _ @Rg + (N=) CT~ (Zern- Ten) ) RS = ges CO-9 CL) - ATy) Rs Vg 2 At Rs. — (n-') OTERS we have, Vo= TiRsStatic equalising yesistoy » CMALEA CUO) Voltage cliatributton aces each ScR- rocken is tt oN § Tun OFF charrockenistics — Twin ON a ors Dynamic T ata ton,> tony | a —S Lo? - yoke a) AE pred ekaac % when SCR & In OFF state the . anode . vt ; voltage ecuces ead «SCR ds S/o - "Vol we Ato ecrt HME ON she total og | across SCR2- Vc appears — [+41 <2 | { a | xy 4 + a } | SCR, 4 wal hl | | f e. - —> a in oe << | ' 1,4 2 5)oe Reslator (R) placed qe ye by dtmit to aindoe ED cusent 4 capacitor. , a ' R Lp order to eqptalise dae volka.ge CueHOSS C ot 2 CRs “he dynamic | _ . _ Hofic equ alte Dynan ric CY cut and Abakic equaling > eq raining ch TUL iGaxeaik 2) —e Reverse TeCovERH Chorige cn-l) 4@, 1 Voem— Vs Posiotlel operation CRS | tern ( Load) cusvient aA greater than zy dhe “Hy at Scr cusutent araking 5» 8cr’s Ags C&~ Cy = an individu Aro. be, connented tn pasraltel a _ actual cient crating iy I; ve via 0 “ Bce’s oak crating 7 x Co nected 4 ecuehy ser! LY ! 7 % tn padiolkel epention “Lc au al b- tes than 4 > because Tov Chasiacter tati cs ane rok ALE» ye Tdentical Pov chanactoulatin > cungorm wvreri “ _ Dt Po Ahasting amg 52 —* Scr?ss 22,> ~ wlek us comider 9 Ber’s Conneded pasiallel x ton "sce, * ton [SCR2 Finger voltage -y for a given gate power it & minimum andde 4p cakhode voltage to twin ON SCR. —s one cn-) SCR’S tuned ON 5 Vak rVeingen Vak7 0Prsies: scr with a. eating I00v.3 ae available +o be ded 19 att tate ip vondte eKv and tka + Calculate ad | c | ne goiter & pasarllet aunts cake RF 4g “pied oh ay ©) | Wor | pee GPs = | ind V, 2008 ocx rating © otal rating = 6KV ,-1KA | DRE = o-1 string icone SS pre ay 3 SE= otak_volkagt m ¥% SCR voltage ong x 1900 ¥ 9 = 6000 gets urls N= 66 4 tK9 sex 2004 5.56 & 6. parole unis 9 = n= by ——* PR = 0% Hsing eyicieney » SE = 08 | 6000 cA O-BX1000 0 =§ sesie, units, 9 = | iEE paxallel units, n= _Le°e 08% ZO0F | = 62S n2 6 Conditions that neet <0 be zocbiapced. Sot using on Sek. 4: Vax TO Van 7 Veinger 2. qate. cwoient should be applied until gor — sseaches aabing \akching ose - Gakt puke width 7 fu on time 4 BCR a Faq win < 14S Tqmax ys Gore ctruit Ahold nynchyonisea ust AS Aupply : problem-3* A &ering 4 4 Aetier — Connethedt gcR Ab provided voit akotte g dynounic equalising circuit + The Huing has +0 ofr Kale voltage oH lokv + The statte equatising aeatxtor Re 44 2SKA and the oly namic equaltatng Teatetance , Re = WoL , wy, = 2'M6 5 Ty, = asm, Taye 4BM~A, coh ° '6eat ce ee the voltage Gloss “” eee or stale and dllscharge Custer Gf Capacitor -voltage acyoss SCR» Vi = (2 - 0.021) 28000 My = (TP -0:025)2 5000 Vg = (T~ 0: 019)25000 oH Nu = (7 — 01016) 2.000 vite + va Vd = 10X10” (ug _ 908) 25000 = Lox lo” Te o:\2 Me (o ia ood!) 25000 = 2u7s¥ | ees 9.028) 25000 | = Q34SV vee C012 _ 6-048) 26000 _ 2550. V- Ny = (CONE— 0: ole) 25000 = 2600 pischoxge cusiene +onough SCR, ~My 2 24aS Le er 6184S a ae BTS" 4 aBAS sq. 245A 0 SCR, = a\s2590 v3 = 634SA Sck = “Se = 3 Re YO | ; 2608 _ 654A ecky oe = 4 Rc. YO both due to s+ In SCR CUHenk tow min oxity or rnay ovity camer . a Aa mrinonity canien device: > BcR % Chhowacker’sIteant atyrister ¢ Ldeal odloce ———~ —z7 3 pours pranstator C power BIT) ub duly controlled okevice -y ct us Cabled -bipolay as the Conduction wa oth | Aue +0 minority q Po ortty conde (te “hols & lev ona) ~ & a & dayen , 2 jundion det eg 4 € 7 te C ce Cc 4 L ? Pp B ® Th & B te E € E cusiyent Conttiolled device . oy It > TE “uw Qa Bee ——te\S = (P- Orori)2Sd00 @ acyoss scW» Vi volta VM, = (-£ -0:025)2 5000 Bee oe ae Ny = (7 - Or0l6)26000 Wave + vgrVy = 10 x10” > (ug - 08) 25000 = 1oxlo qe 6:2 ) 25000 qeetCores 0-024 - quasv a 9-028) 28000 = Q345V Vy (o-t2 -O 048) 25000 _ 2550. V. Nye (ONE- pb 016) 25000 = 2600V pischaxee Guten trough SCR, 2M 2 AMIS. 61-84 Re Get 134s V; Me, BE saan SCQ, = Re ‘YOSek 2 MB “ 2550 _ Re Go? 6324S A scey = a= OF Re. Uo a sca Cenk How & both due to minestty o majority castles ' _y 8cR um a MA mninonity casiiey device: ChavacdertMcteal —thystster_ @ Zdeal dloce at x Js: te =o} sv Powe Tranter C power BIT) olled olevice. _, a fully Cont cabled bipolay 84 the Conduction > tb ay both «aut to Minority a Marjory conten, Coe “holes q lets ons) oe & a & dayenr , 2 jundion aetce c cc. ge .4e : i. > P H, rf ® é te Ee E € € = ~ Te Ww a ceouwent Contiolled devite .~ Generally we Mos e4 NPN trangtos on * {Pf © Election mobility y Hole rnobiltty e Easy +0 ranuyackuns. - « Ccheapet = “ wration Tes? tay les72e277 8So, Ge= Voc — 0 = Veo Re Re. Ak point & , puk Nec = Vee | | then’, Tez Vee-Vee 20 | Re TH Ideal Avdtech, Care 6 =v ak Vero 5 Fe ee cS ak «Nee Vee 4 Io=O Buk practical, ahose points axe at ald a! *&% the power lose at two juncktong Py = Vee In + Mee tc Note Active Crooxe lees) —y wed ot omplipiets Trantor ak Auottch Aabustatton — ON Atale cut ofe — oFe atdleRelation bho ‘a. and ‘p? Forwood Cwisent (x) = Fe gato fe x Ler blw 0:95- 6°94 | | AK\ | dusotent ce » = a Bri she value + p Le blw %0-800 for power Axanssto7 fe = Be +1g fe = I+ te qe ' ® L (.' & . des bet ee ee t dct F) S p te Te i - | ae aat Po iw | 4“ Ig: Vp, -Vae Re [ Mees“ ON Stee vollage’) ofsvep | Vee = Vee * BcRe Vee = Vee ~ Pe Re Vee = Vc ~ plac (+ k= ple) Mec - Vices Re ‘eee Tes =f —— rt Pic ~ Tes = Pcs Tes = Ye~ Vokes Re . “7 dey tes pak GONE t OOF) = 8 “s ovest dsutve. Factor , C ) ee 4- she @IT has cusurent- goto pewo _ dood weriuconce «= Re & 2. De Apply voltage Vee %& \SOV input voltage to Bose Chreuit ia ov. For Uceg = (VU, Voges = VSV. Colcutate t7 value o Re yo operatton an Aolunated state KY Value Sf Re tor ODF oF o wey Corted § CUHENnt goin Wh WT powet Loss Given, pB=Uo Veg = W Re =lor Vees = USV Vee =\SOV. He = wv gi fes = Vec~ Mees Re = IZO-) 212-44 or 1O = 2cs _ 129 tps ~ to = 0:32 Ve- Vees lo-ts Re : = 2656 Tes 08D5. 28 OSL Te= 9x0'd2 = 61 Now, Te = wbl A Re = Ve-Nees _ lW-hS = 5.246. “(6 ] Le 7 ~ Les Forced — Cusorent: Gs Pe = Te e (2-4 _ 28 'B '6| 2

Volkage crating * ! x ot lager > hl hoped cro") % on layer> Utghkly doped cio) ~ Pp layer —> modeictely doped (to ®) | —» Neutical Au chuyje — .ncoteares — Colors KECHonah ope, » through uohich — Ceoetent ahetani hy the | olevice fluo. ineneare a. CL,S9 area > CLM Acoklon hecaen hence reatteunce deoreaues alo Power : cpattoo ALLeUed mk ig wea an medium power and | medium voltage applications . —y Aa ee z llly Swstt ing Chagiactetaticg Delay Here Cea) * 0 ol T& $ Veg, 7 0'9 Vee, Rise time (ts)* . o-( Pe, —¥ 01% Tes OF Veg. —e OI Vee ON Time (toy) = ta + ty typicodly 50- 200ns. ee ‘ey - 7 | Po | ty ! sO — St ee EES : se ao : | 5 | jo ee ' I SSS aatn 7 conduction period . Storage time Cts)" Dusting ts ent stone change, trapped in the function will qe temoved - decease 4 Tc, to OF Teg | ‘ also, tncteare G voltage © to ONVee | fath time Ep) | OAT, *0 O'\ Beg or Veg 40° O'% Vee dope = St TF notes DUE to juncrien copatitance the prt will not Od cuwvent carved Sole openaking axed * am TH Celinmines the Max poorer oltist patton Mrnit a Determines Age verlucy js van ¢-ot * toc ‘000 Vee W) oo 20D 300 Yeo SYO G00 pouen MosFeT: ~~ law device 7 Pally * aa , 3 i ot sy Cuwenk How “ on os sie ity 5 ; a wu . commie, y i & me | s5tb yu a voltage Conftolled advice - 5, sed in ow power, igh eipeng Cony appitcattoru + veny popular wm 1-00 tnverting-> Non Jokehing deutce » = High faput tenpedan ce cto! Na) (lew que power ie quirernent ) = dk hor posttive keropenolure coeiptetent . Ao posialleltng a COA os the 0 Aecondory brectK own « | Vp. e SiO. Layer Cirsulading layer) p-substrale Signal MOseET - & when pp & applied. the n* Aayess ak deatn & Revere 'bieued QF layer out fousce 4 = FOTOS OL biased» But for cumjenk tO flows both the = junctions grou ve, Toru olaxeck ~~ wren Vas Ab applied , due +0 Sor layer acting ak an trawlatoy the. Chosiges ane accurnubaited ak Gey gorte and p-&ubstvale €) % due +o this . polostlsatton , Alfaplacernent™ cusutent flour, us. Concuction Atari] « keee arasitic pe BIT | ar dale regig tl Um The substrate ‘ola on D \ {er qe 14 body : 1 o diced bao Nog Strutute EYOHAE blared 2p =0 ,ar P egion e negative chavge gelx aceurnalat, cuscent Flow from Drain t sew. V@s =O ord. Pe ay dele 7egion: qe is introduced +0 incuene ye Betking capability volrope * gate dicde & enenent + gt Wk an pduarkone MOSFET = pyoen Hoste pnltth E Vos ol vt |[————— Tranter chanactenttices, output choriactenisttce $e, q Lp E> $4} > _ o\ 2/4 6 ¢ Vas Vest Vest — threshold, voltage vfs) VGe-7 Vest » ON- stake | Vas < Vast s orr - stake Susttch tog Chasiackoulstiog “e Mosret Switch chaxcctduictte, __ depends 9, Intwinal ——Capauitance Co wa >Roce MRM CE dq) THO ON EDGE Time taken by 4he fnfenal CaparitoY ty change fuyony 0 to Vest Rue time (ty): ~> TO ehorge 4yom) . Nasr 40 Vase Fall “me (te) -sTo chigchorge fag Vesp 0 Vast Ip 0 Seerage time (ts) € Tusn-oFF delay time (tap): -> To diath oone feo Vg Vase. Disadvantage -S ih on - Ate aesstance 40 high does woul tn dws gyictency H+ hs wolloge nating Nigh» on Male aeyutone = Soft coevasing Fre, a . Tar Vor bly) oan A oat———_—_ Tym Powe loss « Ty Ypg fot ps <100V 57 Boundary AD DS y toov gr Boundany DE | ny f bl BIT and PMosFeT Comnpastiaton BIT P MOSFET 4. 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Vee -G ef eS ‘s ‘ LGBT range chaxadariatte, gutpit Chayactenietc | wes) a Je 7 Gey Vaey Applications 4. Populoss tq ac ond ac duives, %tatie ‘Var CorpertaxivO 2. SHPS , UPS~ petween PMose eT and 200" Cornpasiaton 4. Both axe voltage contiiolled device * 2. vokoge ating a — Ron 8on lsat < Ron | wosret y Pqat & e an 3. ON kale votkag op ¢ des than PMOSFET Sosikchin chora ters Vee} ” - / ' Vet | Sony - _ | a tyr te ie ton Tisin ON Deloy time (tan) * ~The time taken fon Vee to 0-4 vee Coy) the time taken fuom te to ot, % Known a tanRise Hime (ta)* s the Kime taken fyor) OVE +0 O11 Vor (94 olde to 09 Te wu Known af Vise Mme Ton = Tan + Ty, Gote twin Ht thytstor CGToser) 7 A x ()) G x é . > Gn be. tysined on by applying C4ve’ ode Cuswienk and wine off by applying tive? gale Cusstent « > Tk MO acly contiolled Austtch - , %& id sed in anvertu and Chopper Note? Genero ace i met aed to ‘nverlou oe 7; an %& needs an eta, twN— Sf= tutor « model Two aoe moma Te = LE, = Pa Io = KLE, = X2Tk ps we “KNOW » aoe Know, Le = Br Tp, Sco = P2202, Li _ 2 (or pe Ey eS] + Leo, + Lego Dy = x2 fq 601 2 je (at a2) & Por twine proces t ve” gate cusvuent applied , Le, Ig) > tel apply | Dey = 5g + Tey \ Leg = Tey - 24 -—O Kiril > Ta = Bq * Leo. Ket ak node > Tene Iq- Dey > Fa ~ Ula Pour = Iq Cr- %) —© avhen tranigtoy 2 2 Adlwyation fe, = Tez . Boand Te < 2 «5 the Condition for de oviring of xo 7 From 0 LO Vo Lem) Sy Io tg eet Be. < Sey 4 x 2 i. cave Geeta _ ae, 4 < bo : - 5 < Oe) Sa _ Ta Ba -ol y Do. mita(tet | 3 < a eb Substituting By Herne 4 * (P= ee af BED v0 Xo: ats aCe) — 2a a -} mbes Xp Gy)» Za = % ~ 2) “4 - Ke To twin of qe connent 4) neath gueater than the above tour . AKO, Lea Xi + ~ |Saotic 2-¥ chavaclenisticn 0| “3% ™ Veo > & fey SCR = 100- SoomA Bur for GTO =24 _» peveuie voltage blecKing capability GTo Mer dheuat co sve 4 axsoctaled as On- State — veatutaance ant tt foe are nese When commpasced with SR. Advantages * 4 TH u a Aol Conbiolled Altth- Q. TH Auge cunent capability more ab dwt : ( : . Ai using tuin-on OVE fot _ GTO us Efficiency a rmove sin GTO. due to absence a forced Commutation Civcuits - + eonpatk to AE, low weight. Disodwantages* 4, Latching cuwuent and holdi 5 ‘and serenely olaing Quumrent oe | & ON- Abo -weAlutance and its anwoclated Lenes axe more when Compared with SCR: *3. Gah triggering CMH, MOK GTQ Us Gale doive powest loss 44 OTe Applications’ 1 Traction — dutives : > Toavertoy and Choppous « ~ Sustching —- pewlermance * Switthing $= Pose — Tritiolly Te, i dieined on wohich intinn kuin 09 Trey Ve” gate casrent Flows trough qe > fos cum OF GIO, | > the scusun - Of dxwit Mold be Capable of + fh Heep Fronted. gate pulie 4 applied + dyan 09 the = TO! 7 + thyiator T, U twine onStoroge time (ts) + she time = wohhene the vo capper: “ta? being eS. chase CaMHLend fom pra ane cremoved - pote’ Level Volk 1___>——F 7 t 1 aah Ve rhe uowert Top thage “Vet q the nubank ee ee nr - layer TI aelakes fo ahe aan oats of walioge Falk time Cte) © Pq veducer from uk max Guanent value tp aly Ao oT] ailing time ta = test tp tte 5) where boy = twin of time