STB33N60DM2, STP33N60DM2, STW33N60DM2

Datasheet

N-channel 600 V, 110 mΩ typ., 24 A MDmesh DM2

Power MOSFET in D²PAK, TO‑220 and TO‑247 packages

TAB Features
Order code VDS @ TJmax. RDS(on) max. ID
3
1
STB33N60DM2
TAB D2PAK
STP33N60DM2 650 V 130 mΩ 24 A
STW33N60DM2

3 3 • Fast-recovery body diode

TO-220 2 2
1 TO-247 1 • Extremely low gate charge and input capacitance
D(2, TAB)
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
G(1) • Zener-protected

Applications
S(3) • Switching applications
AM01476v1_tab

Description
These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast
recovery diode series. They offer very low recovery charge (Qrr) and time (trr)
combined with low RDS(on), rendering them suitable for the most demanding high
efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STB33N60DM2
STP33N60DM2
STW33N60DM2

DS10564 - Rev 3 - October 2020 www.st.com

For further information contact your local STMicroelectronics sales office.
 STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

Gate-source voltage (static) ±25

VGS V
Gate-source voltage (dynamic AC, f > 1 Hz) ±30
Drain current (continuous) at Tcase = 25 °C 24
ID A
Drain current (continuous) at Tcase = 100 °C 15.5

IDM (1) Drain current (pulsed) 96 A

PTOT Total power dissipation at Tcase = 25 °C 190 W

dv/dt (2) Peak diode recovery voltage slope 100 V/ns

di/dt (2) Peak diode recovery current slope 1000 A/μs

dv/dt (3) MOSFET dv/dt ruggedness 100 V/ns

Tstg Storage temperature range

-55 to 150 °C
Tj Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 24 A, VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 480 V.

Table 2. Thermal data

Value
Symbol Parameter Unit
D²PAK TO-220 TO-247

Rthj-case Thermal resistance junction-case 0.66

Rthj-pcb (1) Thermal resistance junction-pcb 30 °C/W

Rthj-amb Thermal resistance junction-ambient 62.5 50

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) 5.5 A

EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 570 mJ

DS10564 - Rev 3 page 2/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical characteristics

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS VGS = 0 V, ID = 1 mA 600 V
voltage
VGS = 0 V, VDS = 600 V 1
Zero gate voltage drain
IDSS µA
current VGS = 0 V, VDS = 600 V, Tcase = 125 °C (1)
100

IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source on-

RDS(on) VGS = 10 V, ID = 12 A 110 130 mΩ
resistance

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1870 -

Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 87 - pF

Crss Reverse transfer capacitance - 2 -

Coss eq. (1) Equivalent output capacitance VDD = 480 V, VGS = 0 V - 157 - pF

RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 4.5 - Ω

Qg Total gate charge - 43 -

VDD = 480 V, ID = 24 A, VGS = 10 V
Qgs Gate-source charge (see Figure 18. Test circuit for gate charge - 9.8 - nC
behavior)
Qgd Gate-drain charge - 21 -

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 17 -

VDD = 300 V, ID = 12 A RG = 4.7 Ω,
tr Rise time VGS = 10 V - 8 -
(see Figure 17. Test circuit for resistive load ns
td(off) Turn-off delay time switching times and Figure 22. Switching time - 62 -
waveform)
tf Fall time - 9 -

DS10564 - Rev 3 page 3/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical characteristics

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 24 A

ISDM (1) Source-drain current (pulsed) - 96 A

VSD (2) Forward on voltage VGS = 0 V, ISD = 24 A - 1.6 V

trr Reverse recovery time - 150 ns

ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V
Qrr Reverse recovery charge (see Figure 19. Test circuit for inductive load - 0.5 µC
switching and diode recovery times)
IRRM Reverse recovery current - 8.8 A

trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V, - 316 ns
Tj = 150 °C
Qrr Reverse recovery charge - 2.85 µC
(see Figure 19. Test circuit for inductive load
IRRM Reverse recovery current switching and diode recovery times) - 18 A

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

DS10564 - Rev 3 page 4/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical characteristics curves

2.1 Electrical characteristics curves

Figure 1. Safe operating area for D²PAK Figure 2. Thermal impedance for D²PAK
ID GIPD021120151426SOA GC20540
(A)
Operation in this area is
limited by RDS(on)
10 2

tp= 10µs
10 1 tp =100µs
tp =1ms
tp =10ms
10 0

10 -1 T j ≤ 150 °C
Tc = 25 °C
single pulse
10 -2
10 -1 10 0 10 1 10 2 10 3 V DS (V)

Figure 3. Safe operating area for TO-220 Figure 4. Thermal impedance for TO-220
ID GIPD021120151437SOA GC20540
(A)
Operation in this area is
limited by R DS(on)
10 2

10 1 t p= 10µs
t p =100µs
t p =1ms

10 0 t p =10ms
T j ≤ 150 °C
T c = 25 °C
single pulse
10 -1
10 -1 10 0 10 1 10 2 10 3 V DS (V)

Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247
ID GIPD021120151444SOA
(A)
Operation in this area is
limited by R DS(on)
10 2

t p= 10µs
10 1 t p =100µs
t p =1ms

10 0 t p =10ms
T j ≤ 150 °C
T c = 25 °C
single pulse
10 -1
10 -1 10 0 10 1 10 2 10 3 V DS (V)

DS10564 - Rev 3 page 5/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical characteristics curves

Figure 7. Output characteristics Figure 8. Transfer characteristics

ID GIPD021120151500OCH ID GIPD021120151456TCH
(A) (A)
V GS = 8V, 9V, 10V V DS = 20 V
60 60
7V
50 50

40 40

30 30

20 20
6V

10 10
5V
0 0
0 4 8 12 16 V DS (V) 0 2 4 6 8 V GS (V)

Figure 9. Gate charge vs gate-source voltage Figure 10. Static drain-source on-resistance
V GS GIPG021120151514QVG V DS RDS(on) GIPD021120151522RID
(V) (V) (mΩ)
12 600 V GS = 10 V
121
V DD = 480 V
10 500
I D = 24A
117
8 400

6 300
113

4 200
109
2 100

0 0 105
0 8 16 24 32 40 48 Q g (nC) 0 4 8 12 16 20 24 I D (A)

Figure 12. Normalized gate threshold voltage vs

Figure 11. Capacitance variations
temperature
C GIPD021120151536CVR
(pF) VGS(th) GIPD021120151647VTH
(norm.)
I D = 250 µA
10 4 1.1

C ISS
10 3 1.0

0.9
10 2
C OSS
f=1MHz 0.8
10 1
C RSS
0.7

10 0
10 -1 10 0 10 1 10 2 V DS (V) 0.6
-75 -25 25 75 125 Tj (°C)

DS10564 - Rev 3 page 6/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Electrical characteristics curves

Figure 13. Normalized on-resistance vs temperature Figure 14. Normalized V(BR)DSS vs temperature
RDS(on) GIPD021120151654RON V(BR)DSS GIPD021120151656BDV
(norm.) (norm.)
V GS = 10 V I D = 1 mA
2.2 1.08

1.8 1.04

1.4 1.00

1.0 0.96

0.6 0.92

0.2 0.88
-75 -25 25 75 125 Tj (°C) -75 -25 25 75 125 Tj (°C)

Figure 15. Output capacitance stored energy Figure 16. Source- drain diode forward characteristics
E OSS GIPD021120151700EOS VSD GIPD021120151659SDF
(µJ) (V)
1.1 T j =-50 °C
12
1.0

9 T j =25 °C
0.9

0.8
6

0.7
T j =150 °C
3
0.6

0 0.5
0 100 200 300 400 500 V DS (V) 0 4 8 12 16 20 24 ISD (A)

DS10564 - Rev 3 page 7/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Test circuits

3 Test circuits

Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 19. Test circuit for inductive load switching and

Figure 20. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 22. Switching time waveform

Figure 21. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD
VGS 90%

AM01472v1 0 10%
AM01473v1

DS10564 - Rev 3 page 8/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 D²PAK (TO-263) type A package information

Figure 23. D²PAK (TO-263) type A package outline

0079457_26

DS10564 - Rev 3 page 9/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
D²PAK (TO-263) type A package information

Table 8. D²PAK (TO-263) type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.30 8.50 8.70
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°

DS10564 - Rev 3 page 10/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
D²PAK (TO-263) type A package information

Figure 24. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint_26

DS10564 - Rev 3 page 11/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
D²PAK packing information

4.2 D²PAK packing information

Figure 25. D²PAK tape outline

DS10564 - Rev 3 page 12/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
D²PAK packing information

Figure 26. D²PAK reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 9. D²PAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS10564 - Rev 3 page 13/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
TO-220 type A package information

4.3 TO-220 type A package information

Figure 27. TO-220 type A package outline

0015988_typeA_Rev_23

DS10564 - Rev 3 page 14/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
TO-220 type A package information

Table 10. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10

DS10564 - Rev 3 page 15/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
TO-247 package information

4.4 TO-247 package information

Figure 28. TO-247 package outline

0075325_9

DS10564 - Rev 3 page 16/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
TO-247 package information

Table 11. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70

DS10564 - Rev 3 page 17/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2
Ordering information

5 Ordering information

Table 12. Order codes

Order code Marking Package Packing

STB33N60DM2 D2PAK Tape e reel

STP33N60DM2 33N60DM2 TO-220 Tube

STW33N60DM2 TO-247 Tube

DS10564 - Rev 3 page 18/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2

Revision history

Table 13. Document revision history

Date Revision Changes

16-Oct-2014 1 First release.

Document status promoted from preliminary to production data.
Updated title and features in cover page.
Updated Table 2: "Absolute maximum ratings", Table 4: "Avalanche
02-Nov-2015 2
characteristics", Table 5: "Static", Table 6: "Dynamic", Table 7:
"Switching times" and Table 8: "Source-drain diode".
Added Section 2.1 Electrical characteristics (curves).
Updated Section 1 Electrical ratings.
19-Oct-2020 3
Minor text changes.

DS10564 - Rev 3 page 19/20

 STB33N60DM2, STP33N60DM2, STW33N60DM2

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DS10564 - Rev 3 page 20/20