Introduction 1 What In Ans, : The and n type, * The P type and n type ‘materials are chemically pombined with a special fabrication technique to form p-n junction, Pn Junction ? "0 lypes of extrinsic materiale are p type | * On p-side there are large number of holes while on reside there are large number of free electrons, ——___ 5.2 : Drift and Diffusion Current G2 Write the difference between drift current and diffusion current, far [NTU Ans. : When a voltage is applied to a semiconductor then free electrons move towards positive of battery, Such a movement of free electrons is called drifting and resulting current is called drift current., * When an impurity is added to intrinsic material, it is called doping. If this doping is nonuniform then the charge carriers either electrons or holes also exist nonuniformly in the material. As these carriers are of similar type, they repel each other so that their distribution becomes uniform in the material. Due to movements of such carriers, the current flows, which is called diffusion current. The movement of carriers without any external voltage, due to their nonuniform distribution is called diffusion. This plays on important role in the working of the unbiased p-n junction. fart A, Decint4, Marks 2] | [une - tv ] P-N Junction and Zener Diode 5.3 : Theory of P-N Junction] (Formation of Depletion Rep | .3 Explain the formation of depletion req, fan unblased p-n Junction. £3 (QNTU : part qf May09, 12 13.4, Dens2, Haney Ans, + In unblased pon junction, there are, number of oles on prside and large numberof, electrons on n-side, * Due to diffusion, the majority holes on pide gq ditfssing into nside while the majority pe electrons on n-side start diffusing on p-side, In mregion, the oles diffusing from pide recombine with the free electrons on nside ang become immobile positive ions, just near the junction in n-region, * In p-region, the free electrons diffusing from nside recombine with the holes on p-side and become immobile negative ions, just near the junction in P-tegion, * The large number of negative immobile ions fom on p-side near the junction while large number of Positive immobile ions form on n-side near the junction. Due to this, further diffusion of holes and free electrons stops due to repulsion. * Thus there exists a wall near the junction with negative charge on p side and positive charge on n side. There are no charge carriers in this region The region is depleted off the charge carters Hence this region is called depletion region, depletion layer or space charge region. The depletion region is shown in the Fig. Q3.1. Sunn REESE EER eeeeeeeeeeeeeeemeee es Scanned with CamScannere ecricel and Electronics Engineering LN Junction and Zener Diode \ Qe} - | ' 8} © Lnragion eo ~ o-at —Free 1 oe electrons \ are \ ‘ b+ —epietion | region No charge carrer ; Fig, @.3.1 Depletion region Important Points to Remember |, tn equilibrium condition, the depletion region Direction of conventional current * || gets widened upto a point where no further electrons or holes can cross the junction. Thus it angde adls as a barrier. t pipe ntype: |, Due to the immobile positive and negative ions ‘on the either sides of depletion region near the junction, there exists potential difference across the junction. This is called barrier potential, builtin potential, junction potential or cut-in potential of p-n junction. For silicon, it is about 07 V while for germanium it is about 0.3 V. Fig, .4.1 Symbol of a diode | 5.5 : Operation of Diode | Forward and Reverse Blasing) Important Points to Remember ‘+ Applying extemal voltage to p-n junction diode is called biasing. Junction Diode | 2 ¢ | 4 Explain pn junction diode. * Depending upon the polarity of external d.c. [douse ‘The pn junction forms a popular voltage applied to diode, the biasing of diode is y | ®miconductor device called p-n junction diode. classified as, hs two re called electrodes, one each 1. Forward biasing 2. Reverse biasing 4 | om p region and n region Q5 Explain the operation of diode under forward u : pan and reverse blased conditlons. + | "Han ect . conduct current only in one direction. OF (INTU ; Part B, April-18, Marks 5] ; is cathode. a Boson. mode end n on Ans. : Forward Biasing : A fmbel is shown in the Fig: Q41. ~ «¢ When an external dic. voltage is connected in such head in the symbol indicates the direction a way that p region is connected to positive and n conventional current which can flow when an region to negative of the dc. voltage then the Sema voltage is applied in a specific manner biasing is called forward biasing, It is shown in the ‘ates the diode. Fig. Q5:. re—_—_- Xr 7 | EMeenca evaccaricns®. An up teu lr knowledge Scanned with CamScannerMarie Festical and Electronica Engineering co ++] v (4) Forward biasing () Symbolteropreseniation Fig. 8.4 + As long as applied voltage V is less than barrier potential there is no conduction, When applied voltage V is more than. barrier Potential, it overcomes the barrier potential and Teduces the width of depletion region. This is because the negative of battery pushes the free electrons against the barrier from n to p region While positive of battery pushes holes against barrier from p ton region, “As applied voltage is increased, at a particular value, the depletion region becomes very narrow and majority charge carriers can easily cross the junction. “This large number of majority charge carriers constitute a current called forward current. * The current in the p region is due to movement of holes so it is hole current. The current in the n tegion is due to movement of electrons so it is electron current. The holes in p region and electrons in n region are majority charge carriers, Hence the forward current is due to majority charge carriers. * The forward current in a diode is shown in the Fig. Q5.2. stron fe mcas PUBLCATIONS®. Anup tt or romepe eS 5-3 PN Jinton ond Zn May jorae Blasio ¢ i + We hat p region is connected to negayig” tein to psi trial of Ge Lg the blasing is called reverse biasing. It iy stom” the Fig. 253. (0) Reverse blasing | 2 Dade = F v (b) Symbolic representation easy Fig. 0.5.3, + In reverse biasing, negative of battery attracts ty holes in p region and positive of battery attracts ty electrons in n region away from the junction, | * This widens the depletion region and bang | potential increases, No majority charge carrier cay cross the junction. * The resistance of the reverse biased diode is vey high and the diode is said to be nonoperative in the reverse biased, + However due to increased barrier potential, the fee electrons on p side are dragged towards postive while holes on n side are dragged towards negative | of the battery, * This constitutes a current called reverse current I flows due to minority charge carriers and hence its magnitude is very very small. * For constant temperature, the reverse current almost constant though applied reverse voltage 8 increased upto certain limit, Hence it is alt! reverse saturation current denoted as Iy Ths # shown in the Fig. Q5.4, pacoot Scanned with CamScanneriy rtow of minor charge carriers ans aaaaanee xe Acoma cnn pve v (pyDiection of reverse current Fig. 0.54 Reverse biased diode sme reverse current Jp is of the order of few Me eamperes for Ge and few nanoamperes for Si diodes. he $6 : Volt-Ampere Characteristics ‘of a Diode (V-1 Characteristics) 06 Draw and pn junction diode. 63 May-18, Auge18, Marks 51 ‘Ans: In forward biasing V, is the voltage across the pn junction and 11s the forward current hence graph of ly against Vj is called forward characteristics of pn junction. ‘The forward characteristics of a diode Hs shown 1” the Fig, Q6.1. Fig. 8.4 Forward characteristics of @ diode « It is divided into two regions + 1. Region O to P: As Tong as Vy is les an cutin ‘voltage (Vj) the current flowing is very small. 2, Region P to Q and ‘onwards : When Vy exceeds Wy he depletion region becomes very thin and current Iy increases suddenly. This eee se in the current is exponential 2° shown in the Fig. Q6:1 by the region F to Q «The point P, after which the forward current starts increasing exponentially is called knee of the curve ind. the corresponding voltage 'S called knee voltage. eee ee chege | eee eee Vp and viverse current through te diode is Ix thence graph of Ip against Vz is called reverse ‘V-i characteristics of p-n junction. «As the reverse voltage is increased, reverse current ree eases initially but after a small vollaBe ‘becomes constant equal to reverse safuration current Jg- This Scanned with CamScanner« Hectrical and Plestronics Dngineering # Alter this, though wverse voltage 4 increased, the everse current rwmtainy constant till poll A where diodle breakdown occurs. + The point A is called knee point and the conresponding voltage i called reverse Breakdown voltage of diode, # The complete Vel characteristics of pom junction diode is the combination of its forward as well as reverse characteristics, This fy shown In the Fig. Q63. 7: Diode Equation [s Q7 State the diode current equation and explatn ye meaning of each term in it. Wa NTU + Part A, Dec.-06, 13, 17, 18, May-05, 14, Marks 2) Ans. : ¢ The relationship between applied voltage V and the diode current 1 is mathematically given by the equation called diode current equation. jie toler" -i}A where Ip = Reverse saturation current in amperes, V = Applied voltage 11 1 for germanium diode and = 2 for silicon diode Vz = Voltage equivalent of temperature in volts ne A PN Junction ant Zener Digg, oe equivatent af temperate Indicayg, + Tho valtagt current on temperature, dopendence of d e Tho voltage eal 7 tn calculated 09, nde valent of temperature Vy tomporature 1 volts where k= Boltemann’s constant + 8.62 4101 ow kK, ‘y= Temperature In "K «At room temperature of 27 °C be. T= 27 4 273 300° K the value of Vy Is ‘2 300 = 0.02586 V = 26 mV. Important Polnts to Remember e210" |e ‘The diode current equation is applicable for aj) the conditions of diode ie. unbiased, forward biased and reverse biased. While using the diode current equation : For forward biased, V must be taken positive ang we get current I positive which is forward current, For reverse biased, V must be taken negative and we get negative current I which indicates that itis reverse current Q8 For what voltage will the current in pn Junction Germanium diode reach 90 % of its saturation value at room temperature ? BG [INTU : Part A, Dec.-17, Marks 2) n= 1 for Ge, T= 90 % Ip, Vp = 26 mV T= IpfeV/"Vr -1) Ans, : y(may Normal _eperatng rgion | i | mies fa _ Kee i | I Breakdon: | region | aus) TECHNICAL PUBLCATIONS®. wo that fo kcmiadgo Fig. 0.6.3 Complete v-1 characteristics of a diode. Scanned with CamScanner09 Ip ic Resistance of Diode | ; 3 wa 19 i ol 19 ie. diode. Sap GNU Part A, Augit7, Marks 21 ‘Ans. + The resistance offered by a diode 10 its forward current is called forward resistance of @ diode. It is in the range of few ohms. ©The resistance offered by a diode to its revers® saturation current is called reverse resistance of # diode. It is in the range of few mega chms V = 16.69 mv qhe voltage across a silicon dio 08 pratre( 300 “K) Is 0.7 V when 2 mi ewe ‘through It. If the voltage increases ta ft y, calculate the new diode curent. B@LINTU : Part B, Decit3, May.06, Marks 5) 26x10 ~ U9) | 41 Define forward and reverse reslstance of 2 | Q.12 Differentiate between static and dynamic resistances of a diode. | ae [INTU + Part B, Aprit-18, Aug-38, May-19, Marks 51 ans.:V207V, T=300°K, 1=2mA, 1 =2 for si T= Ip @Y7"°r -1, Vz = 26mV at 300°K | Ane: 2x10 = Ig (€07/2%26%10 4) | 4. Static resistance : This is the resistance of Pn j junction diode when p-n junction is used in dic. ie, Ip = 28494 nA | ireuit and the applied forward voltage 1s 4 Hence this is also called dic. resistance of 2 diode. This resistance is denoted as Ry and is calculated at a particular point on the forward characteristics as the ratio of the forward voltage Hence current at V = 0.75 V is, T= 28494 x 10-9 [¢075/2%26x10°9 _y) = 5.2313 mA to the forward current at that point. ato Write the diode current equation and inne Forward dc, voltage ata point | mention how It supports reverse biased condition. | "Forward dic. current at the same point | CGP LINTU : Part A, Au Maes 2] 2, Dynamic resistance : The resistance offered by OR Justity the nature of V-l characteristics of the pn junction under ac. conditions is called diode from Its current equation. dynamic resistance denoted as ry It is also called | Ans. Consider a current equation of a diode as, an resistance of a diode. # If AY; is the change in applied voltage and Al; is the corresponding change in the forward current then AI;/AV, is the slope of the characteristics. The reciprocal of the slope is nothing but the dynamic T= Ig(e¥/Vr =) ‘For forward biased condition, the bias voltage V is positive hence eY/VT >>1 due to positive sign of ‘exponential index. Hence neglecting 'l'. Ip = Tye! resistance rj. “This justifies that forward characteristics is (Tay | eponential in nature. ae” Ge) ‘For reverse biased condition, V is treated negative : 1 hence exponential index has negative sign. Hence | ‘Slope of forward characteristies 'T <<1 and can be neglected to get, | a ne Ip = (-)=-lo | The static and dynamic resistances are shown in the ‘This justifies that the reverse current is constant — Fig. Q.121. ad equal to reverse saturation current. The Negative sign indicates that it flows in opposite | direction to that of Ij. | TECHHICAL PUBLICATIONS®. An up thrust for Knowledge canned with CamScannerPAN Junction end Zip, ‘Dynamic resistance 8. 8M “cp * aly 5, Jane10, 14, AugW-06, May-12, Decnt2, 16, Marks 5) V= 026 V, Ip =2uA, n= 1 for Ge - Wr “Vp r ene + Vp "26 mv For forward resistance, V is + 0.26 V, 1x26x10~3 texto” 210-6 ¢024/25:05 For reverse resistance, V is - 0.26 V, ye = 0.5902. 0 126x109 ipe ye0-6 6026/2605 = 286.344 MQ Scanned with CamScannerand Electronica Engineering am ine nS Pe reopertae 8 ‘Olowing eects on yg Je’ ghe cut.in voltage decreases as th ‘ \e tem, 1 sege temperature. diode parameter, > as temperature increases, temperature: : . ae otra pom iacieal tion temperature is higher, it can dissipate less power. ; of the device decre: = . pecfect of temperature on the diode characteristic shown in the are a peratures, jy re reverse saturation current of a sll ‘on diode is 5 mA at a rox temperature of 27 °C. Find the |gexe stration current at 1) 40 °C and i) 69 =c, eeeom [MTU Part A, Deco, Marts 31 | ds: To =5 mA, ty = 27°C, ng | a fy = 40°C at=t,-t) =13 Ton = QS), as = 2193x5 = 123114 mA 3] Tq= 227°C T,=27°C forsi for $i [Cut involtage decreases ‘as temperature increases, Fig. Q.14:1 Effect of temperature on diode characteristics 9. 0.14 me Scanned with CamScannerx P-N Junction and , Zn Basle Electrical and Electronics Engineering 5-9 a ty = 60°C, At = 60-27 =33 Tog = (25919)x5 = 49.245 mA Q.16 The reverse satu ration curent of germanium diode t4 100 WAS OT sent for sam Vs O02v. ter Vo tY Mf temperature te Incrensed by 20°" Ans. : Io, = 100A, ty = 27°C, V = 02 V, Vz = 26 mV, 1 1 for Ge * 1, = Tyler -1) = 100%10-6fe02/1»26«10"> _] = 219,082 mA New temperature is ty = 27 +20 = 47°C Ty = 47 +273 =320 a Vy, = 8.62x10%xT, = 8.62x10°5 x320 = 27.58 mV = 247/04, aT =ty-ty = 20 = 270/10 100 = 400 HA . Ip = Iggle¥/"V72 -1) = 400% 1076 [e02/ 2275810 _1) « 563,76 mA ——— | 5.10 : Ideal Versus Practical Diode New current | « Characteristics of ideal diode are shown in the Fig. 5.1. « Tecan be seen that cut-in voltage is zero and diode conducts immediately when forward biased. i | In reverse biased, the reverse current is zero so it acts as an open switch. | Scanned with CamScanneraqrcal and Electronics Engineering cameare ideal and practical dod, Practical diode Tehas fre but cutin voltages Tehas small finite intemal forward resistance. |= qe voltage drop There is finite voltage [x Me forward biased drop across foray” ae diode is zero. biased practical diode 1 ads as a short Te does not act asa |* rut (dosed switcy sat (Se ot short circuit in forward biased condition. ‘The internal resistance is very high but finite in reverse biased condition. ‘The internal resistance is infinite in reverse biased condition. I acts as on open circult (open switch) in. reverse biased condition. Tt does not act as an ‘open circuit in reverse biased condition. It carries very small reverse current. All the diodes are practical diodes. It does not exist in practice. | 5.11 : Equivalent Circuits of Diode Q18 Explain the second and third approximations of diode. Vz07V constant {) Silicon diode ode pay jumetion and Zener ‘Ans. : Second approximation of diode the dynamic resistance of a diode is Very neglected, Due to this, the diode for drop is assumed constant equal to cut the diode. Thus the forward voltage dF0P ” diode is assumed constant equal t0 i of 07 V white that of germanium dio The reverse current is very small and negle’ the diode is assumed to be open circuit in MT biased condition, The second approximation characteristics is shown in the Fig, Q-18:1- ‘Third approximation of diode : The approximation Of char enedecs with the help of pieces of straight lines is called third approximation oF piecewise approximation. «To obtain this approximation, V; = Vr ~ Vy (cut im the voltage axis and then & voltage) is marked on slope equal to the straight line is drawn with @ Teciprocal of the dynamic resistance (4) of the diode. Thus the approximation consists of two straight lines, one horizontal and other with slope (¥/Fa) 88 shown in the Fig. Q182. ‘Straight Tine 2 Vj=03V constant \ (b) Gormantum diode | Scanned with CamScannery ————— Basic Electrical a I M2000 tay, Electronics Engineer se lectrontes gineering ar ENT att A ah, Hay 2-19 Draw the various equivatent circuits of a diode. year model. wine ln OR Draw the equivalent clrcult of an ideal diode and that of « plecewite NTE iayry part A, MaytB, Hay) inear model of dlods, jecewlse Ih [ BaF [Part B, May-19, Margy lent clrcult and Vel charactestatice of an Ideal and a battery and te Ans. : For the analysis of various circuits, it is necessary to replace the so OF al ele th “me depending on the approximation. This circuit is called equivalent circuit or Circ uch ‘ircuit models the reverse biased diode is assumed to be open circuited OR Draw the equi Drop acrots diode | Ideal diode yro | | | | i: Piecewise linear with 5 =0.2 | | Table Q.19.1 Diode equivalent circuits Practically in reverse biased condition, the diode is assumed to be open circuit hence the equivalent circuit of diode in reverse biased is an open switch. 5.12 : Applications of Diode | Me art A, Dec.-08, May-12, Marks 2] Q.20 State the applications of diode. 1 [antu ‘Ans, : The various applications of p-n junction diode are, 1. Rectifiers which are further classified as half wave, full wave and bridge rectifiers, 2. Clipper circuits to remove unwanted portions of waveform. 3. Clamper circuits to add d.c. level to waveform. Scanned with CamScanner| tromics Engineering, 5-12 - etneat rec pone Be Voltas goltage 5, Yaris ge eunipliers such a6 wltage doubler, triple ete dectronic and operational amplifier eecsits Such a voltage to current converters, log, nd antl amplifiers, precision —tectifiers, romeo circuits ete. 13 1 Load Line Analysts of Dlode the load line on the Vl characteristics - ae and state Its significance Oy 5 [BTU : Part B, Aug.-17, Ans. + Consider simple diods Fig. Q21 Marks 5] le circuit shown in the Fig. Q21.1 ‘e The gaphical analysis which gives precise / relationship between V; and Iy without using diode approsimation is called d.c. load line analysis of a P.M Junction and Zener Diode * Applying KVL, Vy = Vin -lyRy, WY Le ym ph Fin pee -AQ2L1) © The equation (Q.16.1) is called equation of dc. load. line. It ts stralght line of slope ~Y/R.- For dic. load line analysis, draw the line as per equation (Q21.1) on the diode characteristics given in the datasheet. « For this, the two points are, Point A, V; = 0 V, ly = YEA RL Point B, Ir = 9 A, Vy = VinV line of a diode. « This is shown in the Fig. Q21.2. © Q Point : There exists only one point on the d.c oad line as per the forward characteristics of the diode. It is the intersection of the forward characteristics and d.c. load line of the ‘diode. This is called operating point, quiescent point or Q point of the device. # It is also called dc. biasing point for the diode. diode. | 4 (A) TTT ipa Forward For dc. load line 60 {= characesos er ode int A: (0, ae i Point A: (0, a lo a Point B : Vie 0) 40 i 30 | | 20 | oe. 10 load ine i . | 1 (volts) | | { oft 2 3 4 8 ie | lcurin votage Vo] | ti | | Scanned with CamScannerBaste £1 B-N Junction and 7 He Electrical and Electronica Lngineerlug 5-19 Zener [5.14120 7 Diode and show the breakdown re thea of w Zener Mode 20 4,16, May-OB 1311 vy /822 What diode ? Draw the V-! character Y wir [NTU + Part B OR Draw V-I characterlatics of zener dlode. SINT 5 Part A, Mah, May | Ans, : © A zener dlode faa alien pon junetion slconductor device while operated in Its VET bread, region. | +The zener diodes are fabricated with precise Current breakdown voltages by controlling the doping Cathode Kk ae level during manufacturing. * il «The Fig. Q.22.1 (a) shows the symbol of zener vz ve el diode while the Fig, Q.22.1 (b) shows the the ea { vahiage operation of zener diode in reverse breakdown - region. ‘Anodo A (0) symbol (b) Reverso blasing When the reverse voltage is applied to zener diode, at a certain reverse voltage, the reverse breakdown occurs and current in the zener diode increases rapidly. The sharp change in the zener current is called Kenee oF zener knee of the reverse characteristics. « Bd-reverse bias voltage at which the breakdown as Vz. This value is carefully designed by controllin, «The V-I characteristics of zener diode is shown in the Fig. Q22.2. practically two currents are specified. The Tzmin Fig. @.22.1 Zoner dlode occurs is called zener breakdown voltage, denoted g the doping level during manufacturing. is minimum current through the For zener diodes, zener diode to maintain its reverse breakdown operation. ich zener diode can take safely maintaining its reverse e The Imax 18 the maximum current whi breakdown operation, i.e. constant Vz across it. Forward characteristics similar to the conventional diode Reverse ccharacteristos hh Operating region ramscannergad Electronics Egincering so RN ction ud sr Dla avalanche and zener breakdown mechanisms, ERT[INTU 1 Par B, Decn32, 44, 36, Marcea7, Marks 5] pineal cons Bxpiate th sar pNTU tain the zener breakslown mechaniss, nk Ager mets 9] on exe! 4. Recaklown due to the avalanche Béfect : “ aaj reverse voltage #8 inerwased, at particular value, velocity of minority carriers increases vpn to the Kinetic energy’ associated with the minority carriers, more minority carriers are generated atoms. ‘The collision make the electrons to break daha there is cision of minority carers with the the cowalent bonds, and get accelerated due to high reverse voltage, available as minority carriers inority carriers. This is called carrier eThese electrons are another atoms to generate more mi ‘They again collide with multiplication, ‘eFinally large number of minority ¢ lange mumber of minority carriers give rise to “This effect is called avalanche effect and the mechanism of destroying the junction is called reverse breakdown of a pon junction, The voltage at which the breakdown of a p-n junction occurs is called reverse breakdown voltage. arriers move across the junction, breaking the pn junction. These a very high reverse current. Breakdown due to the Zener Effect : « When a p-n junction is heavily doped the depletion region is very narrow: «Hla field is voltage per distance and due to narrow depletion region and high reverse voltage, it is intense. « Such an intense field is enough to pull the electrons “such a creation of free electrons is called zener effect which is different than the avalanche effect. “These minority carriers constitute very large current and mechanism is called zener breakdown. out of the valence bands of the stable atoms. ese effects are required to be considered for special diodes such as zener diode as such diodes are .ys operated in reverse breakdown condition. between zener and avalanche breakdown. IGP INTU : Part A, May-09, Dec.-12, Marks 3} ___ Zener breakdown Avalanche breakdown | Breakdown is due fo intense electric field Breakdown is due to the collision of accelerated | across the junction. charge éarriers with the adjacent atoms and due to \ Sg ges liplication| fe * a ial e : uso znes with zener vlog les Osc for zea with zener vlog greater then | ___The temperature coefficient is negative. The temperature coefficient is positive. a: | ‘The breakdown voltage decr The brea ‘voltage increases 23 j i 7 ge decreases as The breakdown voltage increases as juncti =n junction temperature increases. ‘temperature increases. seen » The V-l che is \ "The aes y = = | aati i very sharp in The V1 hares is not as sharp as zener | Q.25 Compare zener diode wi ith conventional p-n junction diode. US NTU : Part A, May-12, Dec.-08, Marks 3] 'TECHNICAL PUBLICATIONS? gy, Up thst . r * ‘pecovt Scanned with CamScannerCite Corgi, Wal ag (i An. AEE Eatery a No. ' Zee date | Opet Dpetated i reverse rvakatoway conutiton 2 thei qo egton al operation lies bn thi | ) S| Dynamic zener resistance ts very small in reverse breakdown condition. 4 Zener diode symbol is, m 5. The conduction in zener is opposite to that of sien the symbol as operated in breakdown , SS ‘The power dissipation capability is very high Applications of zener diode are voltage repulstOF | protection creuits, voltage limiters ete | a | 5.15 : Zener Diode as bse «A circuit used after the filter circuit ripple free and keeps it constant irrespe regulator. pa fantom ad Levey, jon diode curiton ane ver at biased gers 18 TOE gh awe condition. revel wyperated pen June ‘he important 4 / | ‘the diode resistance I" reverse biased condition Js very high. ‘The pn junction dl —Ip ode symbol 36 jard biased is in same ne Corvin the symbol, when forward The conduction W! direction as that of arrow in the biased. _ 4 “The power dissipation capability is very low compared to zener diodes. = “Applications of p-n junetion diode are rectifiers ‘rllage multipliers, clippers, clampers and many electronic devices. Regulator | Remember in a power supply which makes the d.c. output voltage smooth and tive of changes in the load or in input line voltage is called voltage 0.26 Explain how zener diode acts as a voltage regulator. GP[INTU : Part B, May-06, 09, 11, 19, Dec. -08, 12, 14, 17, Marks 5] a voltage regulator.’ BP [INTU : Part OR Justify the statement : "A zener diode can be used ‘Aug.-17, March-16, Marks 5) ‘Ans.: #A shunt voltage regulator using zener diode is shown in the Fig, Q.26.1. (See Fig. Q.26.1 on next page) ©The zener diode has a characteristics that as long as the current through it is between Iyq;, and Izmar voltage across itis constant equal to zener voltage Vz. Zin aa «As zener diode is connected in shunt with the load resistance, the output voltage is equal to the zener voltage z ; ‘pecoot AP ecvnncn, PUBUCATIONS®. An mst oon Scanned with CamScannery setondtectrtee Englcerng et R 4 Zoner diode a8 a shu a 078 hunt roguiator | ate FB 026. we can write, i and f = Mea +h | 7 constant and peiptle increases, then the total current 1 increases, constant as Vz i8 constant. Henee th inereases to keep I, constant. . ‘nth ® rt IZ | gaat i Vin decreases, then current 1 decreases Sho Kep constant, Iz decreass, " th cases, as long as Ty is between Izy the Vz ie. output voltage V, is constant. get | | putin bol © gd lamar | ethas the cenpensated and output is maintained constant, | pyglaton with varying load : | | ste input voltage is constant while the load changes in input voltage | eistance Ry, is variable. | sAsVq is constant and V, = Vz is constant, then for constant R the current Tis constant. v,- Vy 1% constant = I, + k ind to keep I constant as it is V, will be +f R, decreases, Jy, increases ai | hy decreases accordingly. But as long between Igmin aNd Izmaxr Output voltage j stant, | ‘Salary if Ry, increases, I | (mstant 1, increases accordingly. But ‘between Izinin ANd Izmaxr O¥tPUE VO" decreases and to keep 1 as long as it Itage Vo will + 1, Large power loss In nertes resistance Voor efficiency due to power loss The ts, output voltage changes due 10 aenet Changes tn fy, produce changes in zener current, ‘The output voltage ts not adjustable as Vo > Vz~ Can not be used for large load currents: .28 State the appitentions of zener diode. Tar(QNTU 1 Port, Hay-09, Marks 2] ‘Ana, : +The various applications of zener dlode are, 1. Asa voltage regulator. In voltage clipper circults. For controlling the output amplitude, ‘As a reference voltage in comparator circuits, As a standard voltage source in calibrating the weer instruments, In various protection circuits. For amplitude limiting in oscillator circu In various types of wave shaping circuits. 29 For a zener regulator shown In the Fig. Q.29.1, calculate the range of input voltage for which output will remain constant. Vz = 6.1,V, lamin = 25 mA, = 25 mA, 12 = 00 6. 8 Vmax | Fig. 0.20.4 Ry, = 110, Vz" 61 Vz. 6 f } eee . 7 = 6.1 mA constant : we RL 1x10? For Viyminy 12 Hzmin ® 25 A be constant. "Tas the changes in the load get compensated and | | | for knot ECHHICAL PUBLICATIONS. An up thrust | 1 = Igmin th," 25+ 6.1 = 8:6 mA Scanned with CamScannerasi Electrical and Electronics Engineering sear Viodminy = Vez + 1R = 6.1 + 8.6107 «2.2410? = 2502.V For Vinimoxy Ta. * Vemax * 25: mA TV Temay + Ip, #25 + 6.1 © 31.1 mA Vingmaxy ™ Vz + IR 6.1 +31.1%10°3 2.2105 = 7452 ™ P-N Junction and Zeng, Diag Thus the range of input voltage is 25.02 V to 74.52 V, for which output will be constant. jote : MCQ and Fill in the Blanks of Unit-lV are given after Chapter END... Scanned with CamScanner[unit - iv |] Rectifiers and Filters ay neat ie need of retiir ? Lint diferent types ifers- dmc Pat A, DEC-O9, 32,18, Marche, Maks 2] sin many electronic circuits, dc. supply is equrd (0 provide power supply to many ents. eaccaly ac. supply is to be obtained from ville a.c. Supply. sme px junction diode conducts in only one ion. In forward biased condition it conducts feavly while in reversed biased condition it is ‘aically acts as open circuit and does not Prduct at all. Hence alternating voltage when ippled to diode, the output varies only in one diection and hence p-n junction diode can be taweniently used to convert a.c. supply to dc. supply. ‘+A creuit which is used to convert a.c. voltage into psating dic. voltage using one or more p-n junction diodes is called a rectifier. ‘Thus the rectifier is very much essential component of many electronic circuits. . rections 1. Half wave rectifier 2 Full wave rectifier using 2 diodes and 4 Bridge rectifier wave forms explain tl 1G [INTU + Part B, May-05, 08, Dec-12, 13, 17, Marks 8) ‘Ana: * The circuit ‘diagram is shown in the Big. Q2.1, i ‘AC.Supply Input transformer Fig. Q.2.1 Halfwave rectiflor © A sinusoidal ac. voltage, having frequency of 50 Hz is applied to rectifier circuit using suitable step-down transformer, with necessary turns ratio. ©The transformer secondary voltage ¢, 18 mathematically given by, | | 6, = Egg sin wt with = 2nf and a f= Supply frequency ©The tums ratio of transformer decides the secondary voltage e, which is applied to rectifier. Open cirult Scanned with CamScannerFig. 0.2.3 Load current and load volta; Operation of the Circuit : * During the positive half cycle of input ac. voltage, terminal (A) becomes positive with respect to terminal (B). The diode is forward biased and the current flows in the circuit in the clockwise direction, as shown in the Fig. Q2.2 (a). This current is also flowing through the load resistance Ry hence denoted as ij, (load current). © During negative half cycle when terminal (A) is negative with respect to terminal (B), diode becomes reverse biased. Thus it acts as an open circuit. Hence no current flows in the circuit as shown in the Fig. Q.22 (b). © Thus the circuit current, which is also the load current, is in the form of half sinusoidal pulses. © The load voltage, being the product of load current and load resistance, will also be in the form of half sinusoidal pulses. The different waveforms are illustrated in Fig. Q.23. i Important Points to Remember | © The peak value of the load current is given by, i | | where R, = Resistance of secondary winding | of transformer # Ry» Forward resistance of diode | # If R, and R; are not given they should be | neglected while calculating Igy. .ge waveforms for half wave rectifior If the transformer ratio is Ny : Nz then, E,(rms) _ Em 4 Na. Epcrms) Epm Ny Where, E, = Transform secondary voltage E, = Transform primary voltage Q3 Derive the expression for the dic. current, average d.c. lond voltage and r. of load current for the half wave rectifier. May-08, 06, 12, ‘Auge08, Dec-10, Marks 5} ‘Ans.: © The average or dic. value of the lod current (Ipc) : It is obtained by integration. * Mathematically, current waveform can be described as, iL = Insinot for0sotsn and i, +0 fornsots2n = Peak value of load current LF Lt aos fir dor) = rd Jn sin(at) dot) 0 0 where Ine * As no current flows during negative half cycle of a.c. input voltage, ie. between wt=n to wt *2% we change the limits of integration. ft tbe al !s sin(atyd(wt) = 12 [-cos(orilS I =~ Z3 [c0s(x)~cos(0)] = - fopaay es Scanned with CamScannergg | ent bed Rectifiers and Viters Inge ht = Average value no average che Foal voltage (Epc) + It Is thw prewtuct of average D.C, load current and the load resistance Ry, \ Foe Hoel ME RL ape Ret Thy wining reslstancs Ry and forward diode resistance Ry are practically very small compared to Ry, expe neglecting therm, ‘The RMA value of the (oad current (lags) ¢ +The RMS means squaring, fining mean and then equare root, Mathematically itis obtained as, rin x 1 Pay = te Fain? oo ao tof asin Mon) pels in? ot dwt) 608204 ayy ag fb fot _singoe|® of (i 2849) naa Se = tm (| Jn Jeg sna) [INTU : Part B, Dec.-14, Marks 5) Ans.: The ac. power input to half wave rectifier is given by, Pac = Bagg Rs +Re +R) DT" Ra Re Ein TR +R, FR) Tks * “ Pac * Poc * Hock Rectfersand i, Ye 1090 and using above, WN Pro Ry o____ |x 100 RAR, ) (ONTU + Part A, APrI-18, Marky OR Show the current paths in a full wave bridge rectifier for # #1 half cycles. ‘The basic bridge rectifier circuit is shown in Fig. Q19.1. . [ Fig, 0.19.1 Bridge rectifier circult + The bridge rectifier circuit is essentialvly a full-wave rectifier circuit, using four diodes, forming the four arms of an electrical bridge. *To one diagonal of the bridge, the ac voltage is applied through a transformer if necessary and the rectified de voltage is taken from the other diagonal of the bridge. Operation of the circuit : * Consider the positive half of ac input voltage. The point A of secondary becomes positive. The diodes D, and D, will be forward biased, while D3 and D, reverse biased. The two diodes Dy and D, conduct in series with the load and the current flows as shown in Fig. Q.19.2. Fig. 0.49.2 Current flow during positive half cycle Scanned with CamScanner= | Fe. Ota © WWTeNt flow duttng negative halt cycle arenes of Toad current and vattage are ston tn tho Fig. Q.19. Fig. 0.19.4 Wavaforms of bridge rectifler Important Points to Remember «For bridge rectifier, in each half cycle wo \ Aiodes conduct hence in the various expressions Ry \ must be replaced by 2R;- +e \ "aR R, \ 2Esn Bot Ibe Re \ , ala pets —— Ri \ Fas 5 Ru” Jae e2R) *RL) . \ 4 *Poe= He Re. “ale Ri and 1 aR +R, +R) \ 2 oe 8 Pao = Rugg (Rs 2Re TRL z Scanned with CamScanner— Rectifiers andr, Basic Electrical and Electronics Engineering i one SR | w?(R,+2R, +R.) | ripple factor y = 048, T.U.F. = 0.812 + TUR = 08 vinding of the transf { * The Eq is the maximum value of a.c. voltage across full secondary s ‘ormer i used, * PIV rating for the diodes used in bridge rectifier is Em: % Max of bridge rectifier ? ansformer flows for the entire cycle all size and less cost may be used, 1) The current in both the primary and secondary of the power tré and hence for a given power output, power transformer of a sm: 2) No center tap is required in the transformer secondary. . 3) The currents in the secondary of the transformer are in opposite directions {A iad co Hence net d.c. component flowing is zero which reduces the losses and danger of sal m 4) As two diodes conduct in series in each half cycle, inverse voltage appearing across diodes got shared. Hence the circuit can be used for high voltage applications. 5) The transformer gets utilized effectively. 2.21 Compare two diode full wave rectifier with bridge rectifier. OSP[INTU : Part B, April-38, May-19, Marks 5) Ans, : Comparison with two diode rectifier = Sr. No. Full-wave rectifier using two diodes Fall wave rectifier using four diodes 1. | Te uses centre tapped transformer. It does not use centre tapped: transformer. ‘Two diodes conduct in each half cycle of input. The output voltage is less. The output voltage is more. : ‘The transformer is less effectively used. ‘TUF is 0812. ‘The PIV rating of the diode is Em, The PIV rating of the diode is 2 Egm, Q.22 A bridge rectifier Is used to supply dc. load of 20 A at 20 volts from 117 volts source. What is the rating of power transformer ? GSP TINTU : Part A, Dec.-14, Marks 3] Ans, : Ine = 204, Epc = 20V In , 2m Ip¢ * GE ie 20=— 2 & Im = 31416 A Tas 7 penzsa Scanned with CamScanneree eae cavoics Ergineering rs h Seay Rectifiers and Ftere “ to" RRS Ry Ret on Bm 7 Hw Rand yw Png 1 PDS Tees Ean 7 Naw x1 “Nay Ban Bows 7 Sh BDAY ns of transformer = Borayytimy * 22.214 x 22 014 493,462 VA, [ss S + Compariso 7, Marks 81 Parameter Number of diodes Dec. power ‘output (Poe) BReARAR) | ote RQR, +R, +R.) % 812% \_ 812% — —— | 9482 0.482 __Ripple factor (1) | + | a | \ Em | Maximum Joad current (Im) \ Ry AR Ry V rating of diode Een in le bene noonn - PIV rating o ae Ripple frequency ast Scanned with CamScannerRector and i, asi Wlctrionl and Plectronia Engineering ou * 6.6 1 Noodl of Filter 0.24 What Ie purpose of using filters with rectiiers ? on 46, Af, De Har PINTU art A, Mareh-46, ne fluctuations of HAPples, whieh ga Maye 00, 11, 19, Haute 9) Ana.:¢ The output of a rectifier cincult is ot pure dey bul A contain “undesired, * To minimize the ripple content in the output, filter clreults are U#ed, Se +The filter is an clectronte circuit composed of eapacltor, Inductor oF €O' ttn connected between the rectifler and the load no ax to convert pulsating Ue, to n in * The filter circuits are connected between the rectifier and lose, as shown in the Pg. Q rye Em, fonts 06 [_. Ran Pulsatng de. Fig. 0.24.4 Rectife Rectifier i AC input Important Point to Remember In capacitor filter circuit, a capacitor is connected in shunt with the load resistance, Looking from the rectifier side, the first element in the filter is capacitor hence itis also called capacitor input filter. Q.25 Explain the operation of capacitor filter circuit with half wave rectifier, TSF [INTU : Part B, Dec.-13,18, May- 08, Aug.-08, Marks 8) Ans.: The circuit diagram of half wave rectifier with shunt capacitor filter is shown in the Fig. Q.25.1. * During the positive quarter cycle of the input, the capacitor C charges to peak value of the f input i.e, sm. This is point A as shown in the Fig. Q25.1. + When input decreases, the C remains charged at { Egn and diode gets reverse biased, * The capacitor C supplies the load R, and starts discharging. + Due to large time constant, capacitor discharges very little from Boy: « The capacitor supplies load for full negative half cycle and next Part of positive half cycle till input is less than capacitor voltage. ¥ ‘Shunt capatoc Fig. 0.25.4 Shunt capacitor filter with HWR Scanned with CamScannerelectronica Dngtnecring «The point B is shown in the Fig, Q.252. ‘sas the discharging of capacitor is very small and ‘harging time is very small, the ripples in the output get reduced considerably. «The input and output waveforms are shown in the Fig. Q252 Explain the operation of capacitor filter with full wave rectifier. NTU : Part B, Dec.-13, May-12, 19, Aug.-08, Marks 5] +The Hig. Q26.1 show the capacitor input with full wave rectifier. Capacitor filter Ru Epc Fig. 2.26.1 Capacitor filter with full wave rectifier * The full wave rectifier may be center tap or bridge rectifier. Immediately when power is tured on, the capacitor C gets charged through forward biased diode D, to Exgy during first quarter cycle of the rectified output voltage. FP recvncn PuaUcAToNs*. an op ttt nomeape on ectifien and Fters 4 Inthe nent quater cycle from 3 to, the capacitor slants dscharging,Yhrough Wy, Once capacitor gets Charged 10 Fyge the lode Dy becomes reverse blgwed and stops conducting, +50 during the period from ¥ to m the capacitor © supplies the load current. It discharges to point B shown in the Fig. Q262. Fig. 0.26.2 FWR output with capacitor filter + At point B, lying in the quarter x to 3 of the rectified output voltage, the input voltage exceeds capacitor voltage, making D, forward biased. This charges capacitor back to Esq, at point C. The time required by capacitor C to charge to Esa, is quite small and only for this period, diode D, is conducting. * Again at point C, diode D, stops conducting and capacitor supplies load and starts discharging upto point D in the next quarter cycle of the rectified, output voltage as shown in the Fig. Q262. At this point, the diode D, conducts to charge capacitor back to Ey... The diode currents are shown shaded in the Fig. Q.26.2. ‘© When the capacitor is discharging through the load resistance Ry, both the diodes are non-conducting ‘The capacitor supplies the load current. © The operation remains same if full wave rectifi with two diodes is replaced with bridge rectifier. a bridge rectifier, C charges through D, and Dy cone half cycle and it recharges through D, and | in next half cycle, Scanned with CamScannerRectifiers and Fite, nd Electronics Engineering $16 stor is defined 88, le factor is defined © revoltage _ V, ripple factor for capacitor filter. | « The rippl rma valueotripplevoltage Vimy, Decnos, 11, 12, Marks 5) v > Ste valueofvoltage —~ Bo carats 8% SUpUt of fall wave rectier | 128 BANE capacitor filter as shown in the Fig, Q271 | 1" Epc *LetT; = Time for which diode is conducting - 7 = Time for which diode is non conducting | ee | FW * During 7h capacitor is charged while during 7 itis |. pet Sischarged. Practically, T, >> 7, | ripple factor becomes double hence, * The Fig. Q.27.1 shows triangular approximation of | + For half wave, ripp! Gear [se * For triangular wave, y, Ve(ems) = Ve. i (ema) = Ve Fi Where, V_ = Peak to peak ripple voltage. * The charge lost by C during T, isQ= CV, Bu, Q = fiat ' h Epc = Eun ~loe[ ze for half wave + The dc. output voltage from a capacitor filter is, : 4 Epc = Ex ~toe[te] for full wave an (+ The ripple voltage present in the output with * But, integration gives average value here | capacitor filter is, Q = Inch = Cv, | IDC volts for full wave Incl, | Vem) 7556 Wee 1 | $e volts for half * Mi ~ volts for half wave j and Vi ¢ras) wW3fC * The rms. ripple voltage is given by, 28 A 50 Hz transformer having 60 V rms on each side of the centre tap supplies a full wave rectifier circuit. The circuit load is 210 Q with a _ Shunt capacitor filter of 1000 uF. Find the ripple | factor, ‘TS [INTU : Part B, May-18, Marks 5) Scanned with CamScannerpened crn sae 2 eV, Ry 210 Beet) v id ee 1000 HE, = 50 Hz ae TCR, RN > Ripple factor for F.W.R 1 17 (ix sonic a0 = 0.0137 ductor Filter or Choke Filter tn the operation of full wave rect oe ar 1S eceeeay Y ngracas vitae o SSPLINTU : Part B, Dee-14, 16, Marks 3) “pe Fig. Q29.1 shows the circuit diagram of Aes rectifier with inductor filter. wwe Inductor fiter Fig. 0.29.1 Inductor filter with FWR |] opertion «ninducor has a property to oppose the change in coment (altemating current) through it. ‘\vhen current through an inductor changes then an ‘tent. is induced in it. This is called back e.m.f. This emf. opposes the cause producing it which is ‘Gange in current. + Thus when rectified output is given to the series inductor, it opposes the changing current which are tpples and it allows only d.c. to reach to the load. This makes the output smooth, removing ripple ‘contents from it. ‘For the operation of this filter, there must be | through the inductor all the time. Hence filer is not used with half wave rectifier and ‘aly used with full wave rectifiers. "Is tipple factor is given by, wn O=2 8 sor Rectifiers wad Fert #1 can be scen that, smaller the vatoe of .- smallet 4s the ripple factor hence this filter 1 suitable for low load resistance ic. high load current applications. «+ For reducing ripple factor, L can be increased Put practically high valuc of L makes it bulky and large in size. Also ite dic. resistance increases reduces the output voltage «The Fig, Q292 shows the waveforms with series inductor filter. Fig. 0.29.2 Waveforms of series Inductor Mtr + As inductors are bulky, costlier and more power consuming, series inductor filters are not used, now a days 2.30 Derive the expression for the ripple factor of a full wave rectifier using Inductor filter. EB [INTY : Part B, Aug.-17, Marks 5] ‘Ans. : For the full wave rectifier, --Neglecting Ry ofl) while the load current iz can be expressed interms of harmonics 25, Poor Tiel iL = BFE cos2at ...Neglect higher order terms with the second harmonic component, i, can be expressed as, (2) Note that Z = R +j 2X, = R + j2wL as the ripple frequency is 2£. Scanned with CamScanner4y, iy = Za a * SalR? sony iL @ Ipe- ac. component present in ip 0) Jn Try ~ “of ac. component present in i 4 Vn a in[R? + (200L)? “2 1, Ripple factor = 7 and use (1) and (4) a $V . 3V2n,/R? +20)? ae mR ‘As load current increases, Ry decreases hence the 2 401? > 1 and 1 can be neglected. Ri Ripple factor = Po a { Important Points to Remember | | + The filter element looking from the rectifier side | is an inductor so it is also called choke input | filter. | fg Explain the operation of L-section filter with fall wave rectifier. 5 [NTU | Ans. : © The Fig. Q31.1 shows L-section or LC filter | with FWR. ) art B, Dec.-11,14, May-12, Marks 5] Fig. 0.34.1 ‘Operation . : cite rectifier output which is pulsating dc i, ‘The inductor offers y, applied to the choke L- . = apr resistance to dc. and hence it allows de Se component. «s Most of the ripples are blocked by an inductor but the remaining ripples are blocked by capacitor Cj offers small reactance to ac. ripples and as connected in shunt with the load, it bypasses the remaining ripples. « The capacitor C offers hi it blocks d.c. component. «Thus due to X, and Xc reactances of L and ¢ almost pure dc. component is available to the load. Due to the double filtering effect, the output of this filter is very smooth. igh reactance to d.c. hence «Its ripple factor is given by, — 6¥20? LC eit can be seen that the ripple factor is nc dependent on the load resistance, which is it important advantage. It remains constant at all th loads. © The Fig. Q.31.2 shows the waveforms of LC filter. w O=2R Output voltage Fig, Q.31.2 Waveforms ac LC filter iL PUBLICATIONS®. An up thrust Tor knowtedge scot Scanned with CamScannerSE —————— f “u ar pf enero Vgnwering bon | has gered reRUlatic eavenpors ond PY im poe ne OA Is Sante oe eg mm ne exerenston (OH EN6 Later tay tay Suse, hary 0 woth ws het ate 5 ot wth htention Witer, 4 Pom Of Se Unt rt fos sxntee 5 ' Ha (ia 5 Pack 8, Hewtecsh, 6), Oates ia t y, rnyeocun oA pn, te at D0, 1 my 7 ? ue dG ety | i iter | 3) ee Rand Jet, we Me 0 60 sessions 4. eect Wap! 2oot, - ad fos on 1 armors component Othe arent tthe ter cei, ot be - in Ene 2 font “Tai * It 2 an gre second harmonic voltage across the load is he fea . Fam * tam *| acti | = tam he «sy 46) ence ® ic vad. 4 Ene En 0 Ene > Eee = Fe we te TR ae LE Saw LC i ~% -@ bet R, w FP MTD: Pact B, Rany 8, Seay 8, ets 7] of _™ Necessity of Bleeder Resistance se that te covet roogh fect be contract amd net +The bake sequinement of a maducte Scanned with CamScannerBasle Electrical and Electronics Engineering Rec oe —* erat +1 current tough Ls nterupiedH develop large bak em, WINES SO “ae diodes and voltage rating of capacitor C. This may damage diodes ono continuously without + To avoid this, inductor L must carry minimum current al the it terminals, which ts caljeg interruption. For this purpose a resistance Ry i9 connected across the ae: bleeder reslstance. * The bleeder resistance 1s shown in the Fig. Q-33-1 Fig. 0.33.1 LC fiter with bleeder resistance 2.34 Compare capacitor input filter and LC filter. Ani ae [pNTU : Part B, Aug-17, 18, Marks 5] : Comparison between capacitor input and LC filter iP Sr. No. | Capacitor Input Filter f ‘Le Filter | “| The fist clemant ofthe filter ao looked from | The fir element of the filter a5 looked from rectifier ede rectifier side is capacitor [is inductor | eee ____ | 2 | The surge current is possible which is limited by ‘The surge current through diodes is absent. \ | using surge limiting resistor. | 3 | Poet of ange back ean Bieter aistane nt rol Possibility of large back em.f. which is harmful to diodes) | and capacitor. To avoide this, bleeder resistance is used. | 7 1 44, | The ripple voltage is a function of load current ie.) The ripple voltage is not dependent on the load. load resistance. ta - ‘The regulation is better. Not suitable for variable loads. Suitable for variable loads. | The dc. output voltage is higher asthe capacitor The dc. output voltage is low compared to capacitor | always charges to peak value. input filter. "Normally used for single phase, high voltage, ‘Used in polyphase rectifier systems employing mercury | fixed load applications. are rectifiers. ‘The ripple factor is, The ripple factor is, 1 1 ee for full eee | | YF 5TCR, for full wave Y* Sawic for full wave Scanned with CamScanner| | a ypetennen Peg ae a oe 9.00 Dh pect secur and 1H {he OHAMHON AT ANTE Wang. NHN ay CLG Filta \ HORN OG alow mW Mh ‘ cae (oN NOVO ATTN WH A oectlon titer, emeqanru «fart 8, Mayet, Marks BT 4 FAW Satter lap i Bilas type Fla. Qa Aion " pactifler OMTPUT FB BlVEN to the cap, . ae ‘his caper offers very en ©) Which fs connected nv parallel with the output of the Re eanacitor Cy OW Teactanes to the ae. c .c. domponent: ahve ANHETO | BYPABOR MOML OF ha ae. component ‘enti lain sce @ goMponent thy c : aie die ‘ i wn re Feaehon to the choke L. the choke 1 offers very hight reactance 10 a: unpre 5 ; OW Mwactance (almost yer) to die, $o It blocks acs component and does not alow (Ut reach to Toad while It allows de, component to pars through It, atte capation C, now allows to pase remaining ac. component by offering very low reactance t0 ac: ples Thu almost pure dhe, component reaches to the load, athe ripple factor for thia filter ta, i | 1° — | os ODT Bo" LEY CY Ry, | onry alta be seen that the ripple factor Increases as Output 1 decreases Le, load current increases, Thus this voluge filter ig not suitable for high load currents hence ‘Output of filter —- Reotifler output itis proferred for light loads, oThe Fig, Q.35.2 shows the waveforma of rt (Pi) fier, *The output of this filter is very: smooth but tt in . suitable only for light loads. Fig, 0.98.2 Waveforms of 1 filter wot Scanned with CamScannerBasic Electrical and Electronics Engineering Q.36 State the advantages and disadvantages of pi section filter. O@[INTU : Part A, Marks 3] Ans. : Advantages and Disadvantages ¢ The various advantages of 7 filter are, 1) The ripple factor is much smaller than LC filter. 2) Higher d.c. output voltage at high load currents can be obtained. 3) The output is very smooth. 4) Easy from design point of view. 5) Useful for light loads. e The disadvantages of 1 filter are, 1) It is bulky due to more number of filter components. 2) Higher PIV rating for the diodes is required. 3) Regulation is poor. 4) The large value of input capacitor C, in necessary. 5) The inductor of high current rating is required hence costly. Scanned with CamScanner