MOSFET is developed, a parallel set of source cells is created. These parallel cells ‘mirror the curtent in the source. This power MOSFET essentially acts like (wo parallel FETs with common gate and drain connections and separate source leads. By controlling the cell number size of each source, a current mieror ratio is pro- duced which determines the ratio of load current to sense current. ‘As compared to discrete H-bridge circuits, monolithic H-bridges, such as the MC33886, are relatively easy to implement. Applications using fractional horsepower DC motors and solenoids can be found in a variety of systems, includ- ing the automotive, industrial, and robotic industries. 12-11 E-MOSFET Amplifiers ‘As mentioned in previous sections, the E-MOSFET finds its use primarily as a switch. Applications do exist for this device to be used as an amplifier, however, ‘These applications inelude front-end high-frequeney RF amplifiers used in ‘communications equipment and power E-MOSFETs used in Class-AB power amplifiers, ‘With E-MOSFETs, Vos has to be greater than Ves for drain current to Flow. This eliminates sel-bias, eurrent-source bias, and zero bias because all these will have depletion-mode operation. This leaves gate bias and voltage-divider bias. Both of these biasing arran; MOSFETs because they can achieve enhancement-mode operation Figure 12-45 shows the drain curves and the transconductance curve for ‘an n-channel E-MOSFET. The parabolic transfer curve is similar to that of [D-MOSFET, but with some important differences. The E-MOSFET operates only in the enhancement mode, Also, the drain current doesn’t start until Vos = Vesey Again, this demonstrates that the E-MOSFET is a vollage-controlled normally-off device. Because the drain current is zero when Vos = 0, the standard transeon- ‘ductance formula will not work with the E-MOSFET. The drain current can be found by: In = KlVes— Vesusl azn) where kis a constant value forthe E-MOSFET found by: sments will work with ky, Jose F 212) son = Vos Figure 12-45 An n-channel E-MOSFET. (0} Drain curves; (6) tansconductance curve. to lo Ves=*5 Vesey Ves.) 1 Chapter 12MOSFET: "The data sheet for a 2N7000 n-channel enhancement-mode FET is shown in Fig. 12-12. Again, the important values needed are Joon, Vesioan and Vesey "The specifications for the 27000 show a large variance in values. Typical values will be used in the following calculations. Zp is shown to be 600 mA when Vos= 45 V. Therefore, use 4.5 V for the Vosian Valles. Also shown, Ves has a typical value of 2.1 V when Vps = Ves and Jp = 1 mA. Example 12-14 ‘Using the 2N7000 data sheet and typical values, find the constant k value and Jp at Ves values of 3V and 4.5 V. SOLUTION Using these specified values and Eq, (12-12), kis found by: 600 mA [a5 V-21VP k= 104% 10 AV? ‘With the constant value of k known, you then can solve for Jp at various Vos values. For example, if Ves = 3 V, Ip is: Ip = (104 x 10"? AVS V- 2.1. VP [p=844mA, and when Ves = 4.5 V, Ip ist Tp = (104 x 10" AV2)E4.5 V — 2.1. VE Ip= 600 mA PRACTICE PROBLEM 12-14 Using the 2N7000 data sheet and the listed ‘minimum values of Jp) and Ves, find the constant k value and Ip when Vos=3 V. Figure 12-46a shows another biasing method for E-MOSFETS called drain-feedback bias. This biasing method is similar to collector feedback bias used with bipolar junction transistors. When the MOSFET is conducting, it has a drain current of oq) and a drain voltage of Vpsion. Because there is virtually no gate current, Ves = Vos. As with collector-feedback, drain-feedback bias tends to compensate for changes in FET characteristics. For example, if [pion ties to increase for some reason, Vpsiva) decreases. This reduces Vos and partially offsets the original increase in Jon. Figure 12-46b shows the Q point on the transconductance curve. The @ point has the coordinates of pj and Vpn). Data sheets for E-MOSFETs often suFigure 12-46 Drei feedback bias: (@) Blasing method; (5) @ point *Vp0 = 25 @ ° Example 12-15 ‘The data sheet for the E-MOSFET shown in Fig. 12-46. specifies Lon and Vasien) = 10 V. If Vpp = 25 V, select a value of Rp that allows the MOSFET to operate atthe specified © point SOLUTION Find the value of Rp using Eq. (12-13): _25V—10V Ro= mA R= Sk PRACTICE PROBLEM 12-15 Using Fig. 12-46a, change Vop to +22 V and solve for Rp. sive a value of Foon for Vos = Vnsion- When designing this circuit, select a value Of Ry that produces the specified value of Vps. This can be found by: Yop — Vosien R= Toten) (a2-13) ‘The forward transconductance value grs is listed on most MOSFET data sheets. For the 2N7000, minimum and typical values are given when Ip = 200 mA. The minimum value is 100 mS, and the typical value is 320 mS. The transconductance value will vary, depending on the circuit's Q point, following the relationship of Ip = k [Ves ~ Voscnl? and &m = 4/2. From these equations, it can be determined that: ‘os m= 2k [Vos — Vasu] (2-14) Chapter 12Example 12-16 For the circuit of Fig. 12-47, find Vos, Iby gm and Vag. The MOSFET specific tions are k = 104 x 10°? A/V?, pon) = 600 mA, and Vagus) = 2.1 V. Figure 12-47 E-MOSFET amplier. R ak 2N7000 Ska roomy SOLUTION First, find the value of Vos by: Ves = 350K. - Vos = 355 pew 12 V) =3.11V Next, solve for Jp Ip = (104 x 10-9 AV?) [3.11 V =2.1 VP? = 106 mA ‘The transconductance value gq is found by: m= 2k [3.11 V2.1 V]=210 ms The voltage gain of this common-source amplifier is the same as other FET devices: Av= ents where r= Rp || Ry = 68 @ || 1k2 = 63.7 2. ‘Therefore, Ay= 210 m5)(63.7 @) = 13.4 and. Yeas = (AW) (Vin) = (13.4)(100 mV) = 1.34. V 30 KO. PRACTICE PROBLEM 12-16 Repeat Example 12-16 with Re MOSFET: 513Summary Table 12-4_| MOSFET Amplifiers Circuit D-MOSFET *Ve0 , Ro : Mn Re E-MOSFET ol | Characteristics + Normally-on device * Biasing methods used: Zero-bias, gate-bias, selt-blas, and voltage-divider bias Ay= nts Zn® Ro Zoa%Ro + Normally-off device * Biasing methods used: Gate bias, voltage-divider bias, and drain-feedback bias Ip=k [Ves — Vesen? oso) (ese ~ Vesanl? Gm» = 2k [Ves — Vesen] Ay=9nts Zn ® Ri Re Zou Ro ‘Summary Table 12-4 shows a D-MOSFET and E-MOSFET amplifier along with their basic characteristics and equations. 12-12 Wide Bandgap (WBG) MOSFETs In the late 1950s semiconductors made from germanium were replaced by those ‘made from silicon, Silicon had material properties that reduced reverse-biased current and made the semiconductor less prone (© changes due to temperature ‘variations. New semiconductor devices are now being manufactured that surpass those made from silicon. These new semiconductors are referred (0 as wide band- ‘gap devices. sid Chapter 12