BUZ 103

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available Pin 1 Pin 2 Pin 3
G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 103 50 V 40 A 0.04 Ω TO-220 AB C67078-S1352-A2

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 23 °C 40
Pulsed drain current IDpuls
TC = 25 °C 160
Avalanche energy, single pulse EAS mJ
ID = 40 A, VDD = 25 V, RGS = 25 Ω
L = 63 µH, Tj = 25 °C 100
Reverse diode dv/dt dv/dt kV/µs
IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C 6
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 °C 120
Operating temperature Tj -55 ... + 175 °C
Storage temperature Tstg -55 ... + 175
Thermal resistance, chip case RthJC ≤ 1.25 K/W
Thermal resistance, chip to ambient RthJA ≤ 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 175 / 56

Semiconductor Group 1 07/96

 BUZ 103

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID, Tj = -40 °C 50 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS
VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 µA
VDS = 50 V, VGS = 0 V, Tj = -40 °C - 1 100 nA
VDS = 50 V, VGS = 0 V, Tj = 150 °C - 10 100 µA
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 28 A - 0.03 0.04

Semiconductor Group 2 07/96

 BUZ 103

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 28 A 10 18 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 900 1200
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 330 500
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 140 210
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 20 30
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 70 105
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 150 200
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 95 130

Semiconductor Group 3 07/96

 BUZ 103

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 40
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 160
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 80 A - 1.2 1.8
Reverse recovery time trr ns
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 60 -
Reverse recovery charge Qrr µC
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.08 -

Semiconductor Group 4 07/96

 BUZ 103

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

130 45

W
A
110
Ptot ID 35
100

90 30
80
25
70

60 20

50
15
40

30 10

20
5
10
0 0
0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25°C parameter: D = tp / T

10 3 10 1

K/W
A
ID t = 11.0µs ZthJC
p 10 0

10 2 /ID
S
VD 100 µs
=
)
on
S(
R D
10 -1
1 ms
D = 0.50
0.20
10 1 0.10
10 ms 0.05
10 -2
0.02
0.01
single pulse
DC

10 0 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 103

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

90 0.13
Ptot = 120W l
k j Ω a b c d e f g
A
VGS [V] 0.11
ID a 4.0 RDS (on)
70 0.10
i b 4.5
c 5.0 0.09
60
h d 5.5
e 6.0 0.08
50 g f 6.5
0.07
g 7.0
0.06
40 f h 7.5
i 8.0
0.05
j 9.0
30 e
k 10.0 0.04 h
i
l 20.0
d 0.03
20 j
c 0.02
VGS [V] =
10 a b c d e f g h i j
b 0.01 4.0
4.5
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0 a 0.00
0.0 1.0 2.0 3.0 4.0 V 6.0 0 10 20 30 40 50 60 A 75
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

60 20

A S

50
ID gfs 16
45
14
40
12
35

30 10

25 8

20
6
15
4
10

5 2

0 0
0 1 2 3 4 5 6 7 8 V 10 0 10 20 30 40 A 60
VGS ID

Semiconductor Group 6 07/96

 BUZ 103

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 28 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

0.11 4.6
V
Ω 98%
4.0
0.09 VGS(th)
RDS (on) 3.6
0.08
3.2 typ
0.07
2.8
0.06 2.4
98% 2%
0.05 2.0
typ
0.04 1.6

0.03 1.2

0.02 0.8

0.01 0.4

0.00 0.0
-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 180
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 4 10 3

pF A
C IF

10 3 10 2
Ciss

Coss

Crss
10 2 10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)

10 1 10 0
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 07/96

 BUZ 103

Avalanche energy EAS = ƒ(Tj ) Typ. gate charge

parameter: ID = 40 A, VDD = 25 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 63 µH parameter: ID puls = 60 A

110 16

mJ
V
90
EAS VGS
12
80

70 0,2 VDS max 0,8 VDS max

10

60
8
50

40 6

30
4

20
2
10
0 0
20 40 60 80 100 120 140 °C 180 0 5 10 15 20 25 30 35 nC 45
Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj )

62
V
60
V(BR)DSS 59
58
57
56
55
54
53
52
51
50
49
48
47
-60 -20 20 60 100 °C 180
Tj

Semiconductor Group 8 07/96

 BUZ 103

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group 9 07/96