STP2NA50 STP2NA50FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

PRELIMINARY DATA T YPE ST P2NA50 ST P2NA50FI
s s s s s s s

V DSS 500 V 500 V

R DS(o n) <4 <4

ID 2.8 A 2A

TYPICAL RDS(on) = 3.25 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220

3
1 2

APPLICATIONS s MEDIUM CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V DS VDGR V GS ID ID I DM () P t ot V ISO T stg Tj Parameter STP2NA50 Drain-Source Voltage (V gs = 0) Drain-Gate Voltage (Rgs = 20 K) Gate-Source Voltage Drain-Current (continuous) at Tc = 25 C Drain-Current (continuous) at Tc = 100 C Drain-Current (Pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max Operating Junction T emperature
o o o

Value STP2NA50F I 500 500 30 2.8 1.8 11.2 75 0.6 -65 to 150 150 2 1.25 11.2 35 0.28 4000

Unit V V V A A A W W/ o C V
o o

C C

()Pulse width limited by safe operating area

March 1996

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THERMAL DATA
TO 220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1.67 62.5 0.5 300 IS OW ATT 220 3.57
o o o

C/W C/W C/W o C

Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS
Symb ol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, < 1%) Max Valu e 2.8 42 1.6 1.8 Unit A mJ mJ A

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A V GS = 0 Min. 500 250 1000 100 Typ . Max. Un it V A A mA

Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C Gate-Source Leakage Current (V DS = 0) V GS = 30 V

ON ()
Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source On Resistance On State Drain Current V GS = 10 V V GS = 10 V Test Cond ition s
ID

Min. 2.25

Typ . 3 3.25

Max. 3.75 4 8

Un it V A

= 250 A T c = 100 oC

I D = 1.4 A ID = 1.4 A

V DS > I D(on) x R DS(on) max V GS = 10 V

2.8

DYNAMIC
Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 1.4 A V GS = 0 Min. 0.8 Typ . 2 300 55 15 400 70 20 Max. Un it S pF pF pF

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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Turn-on T ime Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 250 V R G = 4.7 V DD = 400 V R G = 47 V DD = 400 V ID =2.8 A I D = 1.4 A V GS = 10 V I D = 2.8 A V GS = 10 V V GS = 10 V Min. Typ . 7 8 350 18 5.5 7 25 Max. 10 11 Un it ns ns A/s nC nC nC

SWITCHING OFF
Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 400 V R G = 4.7 I D = 2.8 A V GS = 10 V Min. Typ . 7 7 14 Max. 10 10 20 Un it ns ns ns

SOURCE DRAIN DIODE

Symb ol I SD I SDM () V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.8 A I SD = 2.8 A V DD = 100 V V GS = 0 di/dt = 100 A/s o T j = 150 C 380 4.4 23 Test Cond ition s Min. Typ . Max. 2.8 11.2 1.6 Un it A A V ns C A

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area

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TO-220 MECHANICAL DATA

DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E

mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40

inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151

D1

L2 F1

G1

Dia. F2 F

L5 L7 L6

L9

L4

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H2

P011C

STP2NA50/FI

ISOWATT220 MECHANICAL DATA

DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

L3 L6 L7 F1 F

G1

F2

1 2 3 L2 L4

P011G

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...

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