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1007/s11148-019-00264-7
Refractories and Industrial Ceramics Vol. 59, No. 5, January, 2019
Translated from Novye Ogneupory, No. 10, pp. 16 – 23, October 2018.
514
1083-4877/19/05905-0514 © 2019 Springer Science+Business Media, LLC
Physical and Mechanical Properties of Hot-Pressed Materials of the ZrB2–TaC–SiC System 515
TABLE 1. Composition and Temperature of the Eutectic in Some Systems Containing Refractory MedB2 and MedC According to [21–31]
Eutectic The concentration of phase A The melting point Decrease of melting point
System A – B*
temperature Teut, °C in the eutectic Xeut, mol.% of the phase A Tm, °C temperature DT = Tm. A – Teut, °C
ZrB2–SiC 2280 ± 40 28 3250 970
HfB2–SiC 2360 ± 40 24 3380 1020
TaB2–SiC 2300 ± 40 35 3100 800
ZrC–ZrB2 2660 ± 40 43 3427 767
HfC–HfB2 2980 ± 40 48 3959 979
TaC–TaB2 2730 ± 40 35 3768 1038
C–ZrC 2882 ± 1 67 C – 33 Zr (wt.%) 4500 at 10 – 100 MPa 1618
On the other hand, another direction in the development [5, 7, 12 – 17], ZrB2–SiC–TaC [45], and TiB2–TaC [46]. In
of UHTCs is the creation of mixed carbides of the type Mex [47], it was shown that the TiB2–TaC system ceramics reac-
and Mex(C, B) [36–39], in which the substitution of atoms tively sintered at 2000°C exhibit a flexural strength of
can lead to an increase in the melting point compared to indi- 480 MPa at 1600°C, while the flexural strength of sin-
vidual carbides and borides. In this regard, it should be noted gle-phase TaC and TiB2 at 1600°C does not exceed 210 MPa
that, until recently, mixed carbide Ta4HfC5 was considered to due to high-temperature creep.
be the most refractory compound (Tm = 3990 – 4050°C) The quasi-ternary system ZrB2–TaC–SiC was selected as
[40, 41]. However, in 2016, an experimental study of the the object of study. The solubility of MedB2 in carbides of the
melting temperature of individual and mixed carbides in the group V transition metals is about 7 mol.%, whereas the sol-
Ta–Hf–C system was carried out in [25] by the crucible-free ubility of diboride in carbides of the group IV transition met-
method of pulsed laser heating. The following set of melting als is only 2 – 3 mol.% [26]. This suggests that the change in
points was obtained, K: TaC (4041 ± 77), HfC (4232 ± 84), the lattice parameters of TaC when Ta atoms are substituted
Ta4HfC5 (4178 ± 82), TaHfC2 (4077 ± 78), TaHf4C5 with Zr atoms would manifest noticeably, making it possible
(4120 ± 80). Thus, on the concentration dependence of the to estimate the effect of such a substitution on the properties
melting point there is a local maximum corresponding to the of materials. The phase equilibria in the ZrB2–TaC–SiC sys-
Ta4HfC5 composition and the total maximum corresponding tem have not been studied to date. However, it is reasonable
to the individual HfC with a difference between the melting to expect that the interactions are of the same type as in the
points of HfC and Ta4HfC5 equal to DT = 54 K. Also, due to system TiB2–TiC–SiC [47]. This assumption is based on the
the probability of the presence of maxima in the concentra- similarity of the crystal structure, thermodynamic character-
tion dependence of the melting point, the prospects of study- istics and physicochemical properties of analogous com-
ing the Hf–C–N system should be noted, in which the exis- pounds. Taking into account the noted features of the object
tence of phases with a melting point of about 4200 – 4400 K of study, the purpose of this work was to obtain high-density
was theoretically predicted [40]. In addition to the melting ceramics of the ZrB2–TaC–SiC system, determine its main
point maxima, other concentration dependences with the physicomechanical characteristics and compare the obtained
presence of extremes are of great interest: oxidative stability, results with the structure parameters, including the lattice
high temperature strength, creep, etc. [39, 42 – 45]. constants of the resulting solid solutions.
In the production of ultrahigh-temperature ceramics, the
combination of the two described approaches (the preference
of the eutectic type of systems and the effect of substitution MATERIALS AND EXPERIMENTAL METHODS
of metal atoms in the crystal lattice on the material proper-
ties) can contribute to the simultaneous manifestation of such Commercial powders (at least 98% pure) of TaC (with an
effects as increased oxidation resistance, increased average particle diameter d50 = 30 mm) and ZrB2 (d50 = 10 mm)
physicomechanical characteristics, limited grain growth dur- produced by JSC DZKhR and Sika Tech GC13 SiC powder
ing sintering and maintenance of a high level of refractori- from Saint-Gobain (99.5% SiC, d50 = 13 mm) were used for
ness. It may be of interest to expand the range of objects by the study. The concentrations of the components in the ex-
considering systems of the form MeB2–Me¢C, MeC–Me¢C in perimental formulations are listed in Table 2.
addition to the systems of the form MeB2–MeC, where Me The powders were ground together in a Union Process
and Me’ are various transition metals of the IV – V group of HD-01 attritor at a shaft rotational speed of 400 rpm for
the periodic table that can substitute each other in the crystal 14 hrs in BR-2 (benzene solvent 2) high purity benzene using
lattice of the corresponding carbides and borides. In part, this an attachment and milling bodies made of SiC. The increase
combination of approaches has already been implemented in in the mass of the powder due to the wear of the milling bod-
the production of materials of the systems ZrB2–ZrC–SiC ies averaged 13 wt.%, which was taken into account during
516 D. D. Nesmelov, I. D. Shabalkin, A. S. Lysenkov, and S. S. Ordan’yan
2 where l is the length of the crack from the top of the imprint.
1/d hkl = 4/3(h2 + hk + k2)/a2 + l2/c2, (2)
The flexural strength sfl was determined by the method
of three-point bending according to GOST 20019–74 [48] on
where h, k, l are diffraction indices of reflection, and a, c are a Shimadzu AG-50kNXD tester.
lattice constants.
The volume distribution of particles of the initial and
ground powders by size was determined by laser diffraction RESULTS AND DISCUSSION
in a liquid using a Shimadzu Sald-7500 Nano instrument.
The microstructure of hot-pressed materials and the mor- As a result of hot pressing, high-density samples of three
phology of fractures were analyzed using an SEM Tescan compositions were obtained. SEM images of the material
Vega 3SBH, micro x-ray analysis of the elemental composi- structure are shown in Fig. 2, and the values of density and
tion of the samples was performed using an Aztec Energy physicomechanical characteristics are summarized in Ta-
Advanced x-ray energy dispersive microanalyzer (Oxford In- ble 3. The volume ratio of ZrB2 and TaC is introduced as a
struments). Statistical evaluation of the grain size of the parameter characterizing the concentration of the compo-
Physical and Mechanical Properties of Hot-Pressed Materials of the ZrB2–TaC–SiC System 517
Fig. 2. The structure of hot-pressed materials: a) ZTS1; b) ZTS2; c) ZTS3. Areas of point analysis are marked with + markers.
nents, since the concentration of SiC in all three composi- mal grain growth, apparently due to the relatively short iso-
tions varies slightly (within 34.3 – 39.5 vol.%). For refer- thermal aging (15 min). According to the data of statistical
ence, Table 3 presents the literature data on the image processing in the Thixomet Light software program,
physicomechanical properties of single-phase TaC obtained the average particle size of all phases in all samples is similar
by free sintering a highly dispersed powder without activat- and equals 3.3 – 3.6 mm. Pores concentrated mainly on the
ing additives at 2300°C [49] and TaC obtained by hot press- interphase boundaries around the SiC grains are clearly visi-
ing at 2000°C for 45 min under 40 MPa of pressure [50]. ble (see Fig. 2a ). The origin of these pores, judging from the
In the photographs (see Fig. 2) made in the combined sharp edges and fragmentation form, is associated with chip-
mode of secondary and back-scattered electrons, three ping in the preparation of thin sections. It should be noted
phases are distinguishable — ZrB2 (gray phase), TaC (light that the composition ZTS1, which has the lowest crack resis-
gray phase) and SiC (dark gray phase), which is confirmed tance, is characterized by the largest number of fragmenta-
by micro x-ray analysis data. The results of the average ele- tion-shaped pores. There are also small (less than 0.5 mi-
mental EDX analysis over the area of the samples are pre- cron) spherical pores, apparently diffusion pores, associated
sented in Table 4 (excluding light elements – boron and car- with the formation of solid solutions (see. Fig. 2a ).
bon). The ratio of elements in mixtures is close to the preset Fig. 3a shows a snapshot of the fracture formed in the
(see Table 2), but noticeable impurities of oxygen (up to structure of the ZTS3 sample during indentation. The crack
2.6 wt.%) and titanium (up to 0.29 wt.%) were recorded. The propagation path indicates a mixed transcrystalline and
concentration of Ti correlates with the concentration of Zr, intergrain destruction mechanism. In section 1, a crack (on
since the titanium impurity was found in the initial the left side) bends around the ZrB2 grain, and then passes
ZrB2 powder. through it (or along the junction of two ZrB2 grains). In sec-
The distribution of grains of different phases throughout tion 2, a crack surrounds the SiC grain, while separating a
the volume is uniform, however, some local deviations are small fragment from it. The nature of the fracture surface af-
observed. For example, in Fig. 2, and in the lower part large ter testing the ZTS3 sample for bending (Fig. 3b ) indicates
the predominance of cracking along the grain boundaries,
(about 5 mm in diameter) ZrB2–TaC two-phase regions are
that is, intercrystalline fracture. In some areas (Fig. 3c ) one
visible, which is probably due to the formation of agglomer-
can observe a stepped relief characteristic of transcrystalline
ates at the mixing stage. However, this did not lead to abnor-
fracture. A similar pattern of destruction was observed in all
three compositions.
TABLE 3. Density and Physicomechanical Characteristics of
Hot-Pressed Samples in the ZrB2–TaC–SiC System
TABLE 4. Elemental Composition of Hot-Pressed Samples in the
ZrB2/TaC rrel, % sfl, MPa K1c, ZrB2–TaC–SiC System.
Sample* HV, GPa
volume ratio MPa·m1/2
Concentration X, wt.%
ZTS1 2.4 98.8 292 20.3 4.3 Element
ZTS2 1.0 96.8 441 20.1 4.6 ZTS1 ZTS2 ZTS3
ZTS3 0.4 98.7 417 17.0 5.3 O 2.60 0.87 2.10
TPS — 97.5 338 — — Si 16.15 16.09 13.79
THP — 97.8 — 15.7 4.1 Ti 0.29 0.18 0.09
Zr 32.88 18.30 8.95
* TPS — TaC obtained by free sintering [49]; THP — TaC sintered
Ta 48.08 64.56 75.08
by hot pressing [50].
518 D. D. Nesmelov, I. D. Shabalkin, A. S. Lysenkov, and S. S. Ordan’yan
Fig. 3. The microstructure of the sample ZTS3: a) crack propagation; b ) fracture surface; c) fragment of the fracture surface showing traces of
transcrystalline destruction.
Fig. 4. Interrelation of HV, sfl and K1c (a), concentration dependences of HV and sfl (b ) and K1c (c) of materials in the ZrB2–TaC–SiC system:
1 ) ZTS1; 2 ) ZTS2; 3 ) ZTS3.
Despite the fact that the samples of all three composi- ingly, an increase in ZrB2 concentration), are likely associ-
tions have similar rrel and are characterized by almost the ated with the formation of solid solutions.
same grain size and their distribution in the volume, the Fig. 5 shows the x-ray diffraction spectra of materials of
physicomechanical properties differ markedly (see Table 3 the ZrB2–TaC–SiC system. The position of the diffraction
and Fig. 4). The composition ZTS2 exhibits the best combi- maxima of hexagonal ZrB2, cubic TaC and hexagonal
nation of HV (20.1 GPa), sfl (441 MPa) and K1c 4H-SiC in the initial mixtures coincides with crystallo-
(4.6 MPa·m1/2) (Fig. 4a ). The composition ZTS3 demon- graphic standards PDF 000-34-0423, 000-35-0801 and
strates the highest value of K1c (5.3 MPa·m1/2), however, its 000-49-1428, respectively. When grinding mixtures in the
attritor, there is a noticeable broadening and a decrease in the
sfl and HV are slightly lower — 414 MPa and 17 GPa, re-
intensity of the peaks, associated both with a decrease in the
spectively. The hardest (20.3 GPa) sample of composition
coherent scattering regions and with the deformation of the
ZTS1 has the lowest sfl (292 MPa) and K1c (4.3 MPa·m1/2).
crystal lattice of the phases. The subsequent sharpening of
In Fig. 4b, c, a correlation is definitively observed be- the hot-pressed material peaks compared to the ground mix-
tween the concentration ratio of ZrB2 and TaC and the ture is associated with a decrease in the lattice defects result-
physicomechanical properties of the samples. A monotonic ing from diffusion processes at 2000°C and the growth of
increase in HV with an increase in the ZrB2/TaC ratio (see grains (and, consequently, coherent scattering areas) of the
Fig. 4b ) is associated with a decrease in the concentration of sintered material. In the spectra of hot-pressed compositions,
the least solid component TaC, whose microhardness is a shift of the positions of diffraction maxima along the 2q
17 GPa (compared to 31 GPa for SiC and 27.5 GPa for axis is observed, with the peaks of ZrB2 shifting towards an
ZrB2). The more complex dependence of sfl with the pres- increase in the angle 2q, and the peaks of TaC shifting to-
ence of a maximum for a sample of composition ZTS2 (see wards a decrease in 2q (Fig. 6a ). The magnitude of the shift
Fig. 4b ) and a monotonic decrease in K1c (see Fig. 4c ), ac- in the position of the TaC reflections decreases in the series
companying a decrease in TaC concentration (and, accord- ZTS1 > ZTS2 > ZTS3, and the shift of ZrB2 reflections in-
Physical and Mechanical Properties of Hot-Pressed Materials of the ZrB2–TaC–SiC System 519
creases. At the same time, the position of the peaks of SiC re-
mains almost unchanged. The splitting of Ka1 and Ka2 dou-
blets is weakly pronounced in all hot-pressed compositions,
but at large angles (2q > 60°) it is noticeable that for TaC
lines the splitting becomes more pronounced in the series
ZTS1 ® ZTS2 ® ZTS3, and for ZrB2 lines it becomes less Fig. 6. Displacement of ZrB2 and TaC reflections in the region of
pronounced (Fig. 6b ). This indicates fluctuations in the peri- medium angles (a) and large angles (b ).
odicity of the crystal lattice of solid solutions, i.e., various
concentrations of the solute at different points in the solid so-
lution. For a solid solution based on TaC, the disequilibrium change depending on the volume ratio ZrB2/TaC is almost
increases with increasing ZrB2 concentration in the sample, linear, which corresponds to Vegard’s law for solid solutions.
and similarly, the nonequilibrium of the solid solution based The maximum increase in the parameter a of a unit cell of
on ZrB2 increases with increasing TaC concentration. The cubic TaC corresponds to the highest concentration of dis-
disequilibrium of the obtained solid solutions is primarily as- solved zirconium diboride in the crystal lattice of tantalum
sociated with the short duration of isothermal exposure carbide (sample of composition ZTS1). A similar depend-
(15 min). This time is not enough to complete the process of ence is traced for the parameters a and c of the unit cell of
leveling concentrations. hexagonal ZrB2 — their maximum decrease is observed for
The calculation of the unit cell parameters from the TaC the sample of composition ZTS3 with the highest TaC con-
and ZrB2 interplanar distances (Fig. 7) showed that their tent.
Fig. 7. Dependence of the cell parameter a of TaC (a) and parameters a and c of ZrB2 (b, c) on the ratio ZrB2/TaC.
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