c2) United States Patent Koren et al. ‘US00677014682 US 6,770,146 B2 Aug. 3, 2004 (10) Patent No. 5) Date of Patent (51) METHOD AND SYSTEM FOR ROTATING A SEMICONDUCTOR WAFER IN PROCESSING ‘CHAMBERS (75) Inventors: Zion Koren, Sunnyvale, CA (US); ‘Yorkman Ma, San Jose, CA (US); Rudy Santo Tomas Cardema, San Jose, CA(US); James Tsuneo Taoka, San Jose, CA (US); Lois Wride, Valley View (AU); Craig McFarland, Calary (CA; Shawn Gibson, Calgary (CA) (73) Assignee: Mattson Technology, Ine, Fremont, cAWS) (*) Notice: Subject to any disclaimer, the tem ofthis patent is extended or adjusted under 35 US.C. 1546) by 0 days. (21) Appl. No. 09/776,241 (22) Filed: Feb. 2, 200 (65) Prior Publication Data us 20020104619 AL Avg. 8, 2002 (1) Ime HOLL. 21/00; C23¢ 16000 (2) US.Ch 1181730, 118/725; 118/728; 1181500; 156/345 51; 156/345.52; 156/345.55;, 310090.5; 31037, (58) Feld of Seareh 118730, 725, 118\500, 50.1; 156°345.51, 345.52, 345.55; 310905, 237 (56) References Cited US. PATENT DOCUMENTS. 3771462 A= HY/1973-Barthalom 04290 SI93911 A 120198 Kemmerer ct 4708025 11989 Sakat 800802 91980 Wir a 586,729 A 21992. Katagn Susan A si1992 SIM7S28 A 911902 S553 A 101992 Gronel ea 5216308 A 6/1983 Mechs 521650 A 611983 Om. S224581 A 7/1903 Ebbing ot al S227 948 A 71993 Booa et a, S2T6862 A 121994 Stevens SAM2I7 A 8/1995 Moore et al Saea20 A 1/1995 Tea Sanasl A S/1907 Ogu ta S31517 A * $/1997 Morshite sas 5.132535 8 * 1988 Wang ea: 104284 S790043 & 71998 Ono S795,48 A 81908 Hurwit eta SBIBIS7 A * 1N1998 Nichols eta s10905 (List cootiqued on next page) FOREIGN PATENT DOCUMENTS we 3108687. A + S088 ouy37317 2» OIDH953 A= 21983 Hous: » ‘onaso1s A + 21995 6011304 ® 2onin6746 & + 32001 HODK4103 ae aouams72s A * 32002 oIL.21205 Wo Wo>sS2214 11/1998 Primary Esaminer-—Gregory Mills Assistant Examiner—Ram N Kacker (74) Attorney, Agent, or Firm—Dority & Manning, PA. 6 ABSTRACT ‘The present invention is generally directed toa system and races for rotating semiconductor wafers in thermal pro- cessing chambers, such as rapid thermal processing cham- bers and chemical vapor deposition chambers, In accordance ‘ith the preseat invention, a semiconductor wafer is sup- ported on a substrate holder which, in turn i Supported on 4 rotor, During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rota tion aetustors positioned outside of the chamber 38 Claims, 7 Drawing SheetsUS 6,770,146 B2 Page 2 US. PATENT DOCUMENTS. ssm28 A 11/1998 SA71S88 A 21099 50s2985 A 11/1990 So8962 A 11/1999 008281 121999) Gnome a Moslehi et Davenport Iheds et Conboy eta somais A + bisa A AST105 A+ (6320.00 Bi * (6.464825 BBL + * cited by examiner 22000 1/2100 1200 112001 20m Shinozaki ta Dovwers a Tite eh Kanebako ea Shinozaki isis sonst sias0s S100 ss. 55U.S. Patent Aug. 3, 2004 Sheet 1 of 7 US 6,770,146 B2U.S. Patent Aug. 3, 2004 Sheet 2 of 7 US 6,770,146 B2U.S. Patent Aug. 3, 2004 Sheet 3 of 7 US 6,770,146 B2U.S. Patent Aug, 3, 2004 Sheet 4 of 7 US 6,770,146 B2 Fig. 4U.S. Patent Aug. 3, 2004 Sheet 5 of 7 US 6,770,146 B2 y Fig. 5U.S. Patent Aug. 3, 2004 Sheet 6 of 7 US 6,770,146 B2 Fig. 6U.S. Patent Aug. 3, 2004 Sheet 7 of 7 US 6,770,146 B2 Fig. 7US 6,770,146 B2 1 METHOD AND SYSTEM FOR ROTATING A. SEMICONDUCTOR WAFER IN PROCESSING ‘CHAMBERS: BACKGROUND OF THE INVENTION Tntegrated cicuit chips are typically Formed on semicon- ‘ductor wafers. Various layers of different materials are built, ‘on the wafers in various different types of chambers. Such ‘chambers ean include rapid thermal processing chambers fnd chemical vapor deposition chambers. In a chemical ‘vapor deposition chamber, a gas or vapor is fed into the ‘chamber which reacts with the surface of the wafer, ‘Arapid thermal processing chamber, which can be usd as chemical vapor depasition chamber, refers to a device that rapidly heats objects such as semiondictor wafers. Such devices typically include a substrate holder for holding a semiconductor Wafer and an energy source for heating the ‘wafer During heat treatment, the semiconductor wafers are heated under controlled conditions according to a pre-set temperature regime. For monitoring the temperature of the semiconductor wafer during heat treatment thermal pro= ‘essing chambers also typically include radiation sensing devices, sue as pyrometers, that sense the adation being emitted by the semiconductor wafer at a selected wave= Jength. By sensing the thermal radiation being emitted by the ‘wafer, the temperature of the wafer can be ealeulated with reasonable accuray. ‘Many semiconductor heating processes require a wafer to bre heated to high temperatures so that various chemical and physical transformations can take place as devices are fabricated on the wafer. During rapid thermal processing, which is one type of processing, semiconductor wafers are typically heated by an aeray of lighls to temperatures, for Instance, from about 400° C. 0 about 1,200" C,, for times ‘which are typically less than a few minutes, During these processes, one main goal i 1 heat the wafers 38 uniformly as possible Tn order to heat wafers as uniformly as possible, the ‘wafers are typically rotated within the thermal processing, ‘chamber. Rotating the wafer promotes greater temperature uniformity over the sucface of the wafer and promotes ‘enhanced contact between the wafer and any gases intro ‘duced into the chamber. Inthe past, various mechanical systems have been used in ‘ordee to rotate walers in thermal processing. chambers, Unfortunately, however, the mechanical systems have & tendency to generate small particles eaused by the mechani- ‘al parts contacting each other. These panicles can enter the ‘chamber and contaminate the process being extried out Even the slightest amount of contamination within the ‘chamber ean drastically affect the properties of the wafer oF ‘of layers being formed on the wate. As such, «need curently exists for an improved process and system for rotating walers in thermal processing ‘chambers, such a rapid thermal processing chambers and ‘chemical vapor deposition chambers. In particular, a need ‘exists for a system and process for rotating wafers in thermal processing chambers that efficiently rotate the wafers with- ‘but the risk of contaminating the processing chamber. SUMMARY OF THE INVENTION ‘The present invention is generally directed 10 2 method and system for processing semiconclictor wafers in thermal processing chambers, More paticulaely, the present inven- % o 2 tion is diected to magnetically levitating axl magnetically rotating semiconductor wafers during processing, For example, in one embodiment, the system of the present invention includes 2 thermal processing chamber duped to contain semiconductor wafers. A heating device, Such as a plurality of energy sources, are pesitioned outside the chamber for beating the emicondactor wafers contained within the chamber. A rolalable substrate holders posi tioned within the thermal processing chamber and is eon- figured to support a wafer being processed. ‘According to the present invention, the system further includes a rotor supporting the substrate holder. The cotor ean have a circular shape and can be made partially or completely of material eapable of being influenced by 8 ‘magnetic force. Al least one suspension actuator is pose tioned outside of the chamber and ahove, below or at an langle tothe roor for levitating the soto. In order to rotate the rotor, the system further inehudes a puraity such as at least three rotation actuators also positioned on top, on the side or below the rotor outside ofthe chamber. The suspen- Sion actuator and the rotation actuator each are capable of generating a magnetic field for levitating and rotating the olor respectively, In one embodiment, the rotation actuator includes. 3 (C-shaped magnetic element having a par of opposing poles that define first and second rtation surfaces. The Csbaped ‘magnetic element is placed in operative association with 2 ‘magnetic coil that generates magnetic Held when a0 clecric current is fed though the coil. The rotor ean be positioned in between the first and second rotation surfaces The rotor can hive a smooth surface or can include a plurality of spaced apart radial teeth. The teeth ean be positioned in between the first and second rotation surfaces. In this embodiment, the rotation actuator can create a pulsing or variable magnetic field that acts upon the rad teeth to rotate the rotor ‘Besides using a rotation actuator which produces a vari- able magnetic feld through the use of a magnetic element land a magnetic coi, in an alternative embodiment of the restal invention, the rotation actuator can bea rotating disk {hat contains «plurality of permanent magnets. The disk ean be positioned so that the edge of the disk is located adjacent to the rotor as the disk is eotated, The disk ean be rotated using, for instance, a motor. Permanent magnets can be installed on the periphery of the disk with the magnetic pole ends i the radia dieetion. In this manner, 28 the disk is rotated, the permanent magnets induce a field in the rotor ‘The induced field causes an alteactive foree to be set up between the rotor and each roating permanent magnet. AS the magnet turns and moves away from the induced field of the ror, the attractive fogce cess i a torque which causes the rotor o rotate. One or moce of these disks containing the permanent magnets can be placed adjacent tothe rotor as Sesired ‘As mentioned above, the system of the present invention includes a least one rotation actuator In one embodiment, the system can include a plurality of rotation actuators, such 438 from about three rotation actuators to about twelve or ‘more rotation actuators. The rotation actuators can be posi- tioned around tbe rotor at any desired Tocation, The suspension actuator used in the present invention, in ‘one embodiment, can include a U-shaped magnetic element surrounded by a coil. Similar 10 the rotation aetuator, the ‘magnetic element can generule « magoctc field when an electric current i fed through the col "The U-shaped magnetic clement of the suspension actus for can include a first suspension surface and a secondUS 6,770,146 B2 - ‘suspension surface that face the rotor. The rotor, in tun Include fist and second annular raised portions positioned below the frst and second suspension surfaces. When the stspension actuator restesa magnetic field, the rotor ean be levitated through the altracion of the frst and second stan raised portions with the Hist and second suspension ‘surfaces. Through this configuration, not only #8 the rotor Tevitated, but is also maintained in radial alignment due 10 the presence of both ofthe anaular raised portions and the feluctance centering relationship they form with the suspen- sion actuator. In one embodiment, the system can include position sensors located adjacent tothe rotor. The position sensors ‘can monitor the Vertical position ofthe rotr in relation toa horizontal plane. In one embodiment, the system eun include ‘v0 vertical position sensors, ooe being the relerence sensor ‘The position sensors can be placed in communication with controller, such as a microprocessor. The eonrollr ean be ‘configured to receive information from the position sensors regarding the postion of the rotor and, based on the infor ‘mation received, 10 independeatly adjust cach suspension ‘cluator included in the system for levitating the rotor a ‘termined distance snd for maintaining the rotor paallel to the horizontal plane. Besides being controlled Independently, the suspension actuators can also be con- teolled in coordination with each other. Coordinating contol ‘ean be implemented in a mult-input-muli-output contol scheme, Resides vertical postion sensors, the system can also include rotation sensors. For exampley frst rotation sensor ‘can be wsed to monitor the speed of the rotor, while another rotation sensor can be used for homing pesition, Examples ‘of rotation sensors that may be used in he present invention Jnclude Hall Effect sensors or laser sensors. Other features and aspects of the present invention are “discussed in greater detail below. [BRIEF DESCRIPTION OF THE DRAWINGS A full and enabling disclosure of the present invention, including the best mode thereof, directed to one of ordinary kil in the ary, is set forth more particulary in the remalnder ‘of the specification, which makes reference tothe appended figures in whiel FIG. 1 is a sectional view of one embsxliment of an appariius for processing semiconductor wafers made ia tscvordance withthe present invention; FIG. 2 is a sectional view of a portion of the apparatus ‘Mustrated in FIG. 1; FIG. 3 is a perspective view of one embodiment of a _system for rotating wafers in thermal processing chamber; FIG, 4s perspective view of one embodiment of a rotor that may be used in the system illustrated in FIG. 3; FIG, Sis crose-sectonal view ofa portion of the system iustrated in FIG. 3 FIG. 6 isa perspective view of an altemative embodiment ‘of 4 system for levitating and rotating wafers made in sccordance withthe present invention; FIG, 7 is side view of an alternative embextimeat of a rotational device for use in wafer rotation systems of the present invention Repeat use of reference characters in the present speci ‘cation and drawings is intended to represent same of tnalo- ‘gous features or clemenis of the invention, DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS tistobe understood by one of ordinary skill ia the at that the present discussion is a description of exemplary embodi- % o 4 is only, and is not intended as limiting the broader aspects of the preseat invention, which broader aspects are ‘embodied in the exemplary construction. In general, the present invention is directed to an appa- ratus and method for processing walers in a thermal pro- ‘cessing chamber, such as a rapid thermal processing cham ber andlor a chemical vapor deposition chamber. More particularly, the present invention is directed toa system and ‘methad for rotating wafers in thermal processing chambers. ‘During the processing of wafers in thermal processing systems, the wafers are typically rotated inorder to ensure ‘uniform temperature distabution and uniform contact with gases flowing through the chamber. In the past, various ‘mechanical beariags have been used in onder Io roate the ‘wafers. Due to ietion, these bearings can have a tendency to produce coataminanis which enter the thermal processing chamber and can adversely intertere with processes oceut- ring therein, As sueb, the present invention is directed lo @ system and process for rotating wafer in thermal processing chambers that does not produce the type of contamination associated with mechanical bearings. Specifealy, the preseat invention is directed fo magnetically levitating and ‘magnetically rotating waters in thermal processing cham- bers. Through the use of magnetic forees,a rotor supporting semiconductor waler can be rotated in accordance with the present invention without any mechanical parts contacting the rotor ‘Besides eliminating the generation of particles caused by ‘mechanical earings, the system ofthe present invention has other various advantages. For instance, the rotation system fof the present invention provides better performance by ‘operating with lower vibrations and reduced sensitivity to cortosive chemicals and deposition from process gases Tecause the rotor is rotated without contacting any other pars, the system of the present invention has 4 long useful life and requires litde maintenance. Further, seals are not required ofthe use of lubricants. Because all of the active ‘componens are located outside of the thermal processing ‘chamber, the rotation system of the present invention does not interfere wth processes occuring inthe chamber, which ‘makes it simpler to control the almosphere within the chamber, such 28 maintaining a vacuum within the chamber Referring to FIG. 1, an apparatus If made in accordance ‘with one embodiment of the present invention for heat treating wafers, such as silicon waless, is shown. The apparatus includes a thermal processing chamber 12 gener ally adapted to receive a wafer If for conducting various processes. The apparatus II is designed to heat water 14 at very rapid rates and under carefully controlled conditions ‘The walls of thermal processing chamber 12 can be made from various materials including metals and ceramics. For instance, chambe 12, in one embediment, can be made fer stainless stel. When chamber 12, however, is made from 2 beat conductive material, preferably the chamber includes a cooling system. For instance, chamber 12 ean include a cooling conduit (oot shown) wrapped around the perimeter ff the chamber or chunaels bull into the apparatus for circulating cooling fluid, such as water, whieh is used 10 ‘onl the chamber during operation, “The apparatus HL can also include a gas inlet and a gas ‘outlet foe inirocicing and circulating a gas into the chamber 12 if desied. For instance, a gas, sich as an inert gs, ean be introduced into thermal processing chamber 12 through = gas inlet for preventing and inhibiting any adverse chemical ‘actions from occurring within the chamber. The inet gas, Tor instance, can be aileogen,US 6,770,146 B2 5 Inan alternative embodiment, as can be introduced into thermal processing chamber 12 that coatains ® gascous reactant. The gascous reactant can be designed to teact with ‘wafer 4 for depositing a film or costing on the surface of the wafer. The reactant can be used for RIP processes, CVD processes, or wafer cleaning processes. ‘As shown, waler 14 is positioned within thermal process: jing chambe 12 on a substrate boldee 24, During processing, ‘ubsteate holder 24 rotates wafer 14. The preseat invention 's particularly directed to an improved system for rotating water 14 in the thermal, processing chamber as will, sdeseribed in more detail bok. In order to heat wafer 14, the system of the present ‘invention includes » heating enerey source in communica- tion with thermal processing chamber 12, In the embod ment ilkisirted in FIG. 1, the energy source comprises & plurality of lamps 26, sich as taysten-halogen. lamps, Positioned below and above wafer 14, If desire, lamps 26 ‘can be surreunded by a reflector or a set of reflectors for carelully directing thermal energy being emitted by the Jamps oto wafer 14 at pasticular locations. Besides being placed above and below wafer 14, lamps 26 may be placed ‘only above the wafer, only below the wafer andior at any Particular location, ‘The particular type of lamps that can he use in thermal processing chambets made ascoaing to the present inven- tion ean vary depending upon the particular circumstances Inthe embextimen illustrated ia FIG. 1, the lamps 26 are ‘elongated linear lamps that are oriented horizontally in a plane parallel to the wafer. In other ombadiments, however, ‘hore? vertically oriented lamps ean also be used ‘The use of lamps 26 asa heat source can provide various beneiis. For instance, lamps have much higher heating and ‘cooling rates than ollie beating deviews, such as elecrical ‘elements or conventional furnaces. Lamps 26 create rapid thermal. processing system that. provides inslantancous ‘energy typically requiring a very short and well controlled ‘tart Up period. The flow of energy from lamps 26 can also be abruptly stopped at anytime. Lamps 26 can be equipped with a gradual power coouller 22 that can be used 0 increase of decrease the thermal encrgy being emitted by the amps ‘Resides using light energy sources as shown in the figures, however, in an alternative embodiment, the waler ‘ean be heated using a susceptor. A susceptor is a heated ‘element placed adjacent to the wafer, For most applications, the susceptor is heated through electrical resistance. In order to monitor the temperature of wafer 14 during a thermal process taking place inside the chamber, ane of ‘more radiation sensing devices 28 are included in commie nication with the chamber. Radiation sensing devices 28, which can be, for instance, pyrometers, include an optical fiber or light pipe 30 which extends from each radiation sensing device 28 adjacent to the chamber. Alternatively, insead of light pipes, the pyrometers can use lenses 10 receive radiation emitted by the wafer Light pipe 30 is configured 10 receive thermal energy being emitted by wafer 14 at a panicular wave-length. The amount of sensed radiation is then communicated to radia- tion sensing device 28 which generates « usable voltage signal for determining the temperature of the wafer. In particular, by knowing the amount of thermal radiation heing emitted by wafer 14 at a particular wavelength, the temperature ofthe object can be calculated based, in parton Planck's Law. During the process, light pipe 30 should only detect thermal radiation being emitted by wafer 14 and should be % o 6 prevented from detecting thermal radiation being emitted by lamps 26 atthe desied wavelength. In this regatd, thermal processing chamer 12 can inelude spectral filters or win- ‘Sows 32 and 34 which are positioned between lamps 26 and wafer 14. Special filers 32 and 34 can be designed if ‘needed to filter out thermal radiation being emitted by lamps 26 which is atthe wavelength at which radiation Sensing ‘evice 28 operates. For instance, in one embodiment, wine dows 32 and 34 are made from fused siliea or quart, ‘Windows 32 and 34 also serve o prevent the chamber from being contaminated during use. Radiation sensing devices 28 are placed in communic sion with « controller 40, Controller 40 which can be, for instance, a microprocessor based device or olher program- rable device, can also be in communication with the poster controller 22 for the lamps 26. Controller 40 can be con- Tigured to receive temperature information from radiation sensing devices 28 and, based on such information, auto- ‘matically control adjustable power conteoller 22 for main- taining the temperature of the wafer 14 within 4 desired range. For instance, controller 40 canbe programmed to heat the wafer at a particular rate and according to a particular lemperature regime that is appropriate for 4 particular beat treating andor chemical process. ‘One embodiment of a magnetic levitation and rotation system constructed in accordance withthe present invention will now be described in detail with reference to FIGS. 1 through 8. As shown, in order 1 rotate the wafer M4, the wafer is supported on the subsirate holder 24, The subscale holder 24, in tur, is supported on a rotatable rotor $0. As shown in FIG. 4, the rotor 80 asa circular ring-like shape. ring operation of the apparatus shown in FIG. I, the rotor ‘50 is magnetically levitated and rotated which, in turn, rotates the wafer ‘The rotor is made partially or completely from a mater thats capable of being influenced by a magnetic force. For ceximple, the rolor can fe mace from a metal, such a ‘magnetic stainless steel. Alternatively the eotor can be made from a combination of materials. For instance, a quarz rotor cean be used embedded with one oF more pieoes of metal ‘Since the rotor is positioned within the thermal processing chamber 12, the rotor should alsa be capable of withstanding high temperatures without deteriorating or otherwise cor ‘oding, Of particular advantage, however, rotors used in the present invention may undergo some thermal expansion. Io particular, the system of the present invention allows the otor fo undergo thermal expansion while still maintaining levitation and rotation performance. For example, in the embodiment illustrated in FIG. 1, the rotor ean havea radial ‘thermal expansion of upto sbout 008 inches, particularly up to about (208 inches at a temperature of 300 degrees C. relative to eoom temperature (20° C) Tn order to prevent corrosion, the rotor can also be selectively coated with layers of anti-wear andior ant rrosive materials depending upon the process conditions. For example, in one embodiment, the otor ean be made from stainles steel and costed with silicon carbide. ‘As shown in FIG. 4, the rotor $0 includes a plurality of spaced apaet eth $2, The teeth 82 interact with 4 rotation device for rotating the rotor. It should be understand, however, that a rotor without teeth may also be used in the system of the present invention As also illustrated in FIG, 4, the rotor includes a pair of annular raised portion or ridges 84 and $6, Raised portions ‘4 and $6 assist in levitating the rotor and maintaining the rotor in radial alignment as will be discussed in more detail below.US 6,770,146 B2 1 As shown particulary in FIGS, 2 and 5, the rotor ean also Jnclude aq annulat rib or foot 58 located on the bottom ‘surface of the rotor. The annular rib 58 can be used as a Tanding contact area when the rotor is not being levitated of rotated. The annular rib 88 can also be uscd to dissipate heal from the ror. As shown in FIG. §, the annular ib 88 ea have a round shape and can be coated with an anti-wear ‘material andor ean be polish! fo avoid any patieles from ‘wearing off he ror when the sib is resting on a sueface Ta general, the annular rib can be continuous around. the ‘iccumference of the rolor or ean have intemittent contact areas. Asshown in FIG. § he annular rib or foot $8 can aso be balanced with an annuiar rib positioned on the top of the rotor. In some embodiments it may be desirable to place an ‘opposite annular rib on the tap of the rolor in onder to balance the lux fringing being emitted by the rotatio actuator 74, which is described in more detail below. Inorder to lift and conte the vertical position of the rotor ‘within the chamber, according tothe present invention, the system includes atleast one Suspension actuator 60, In the ‘embodiment illustrated in FIG. 3, the system inchudes three ‘suspension actuators 60, 62, and 64 which are equally, ‘paced around the circumference ofthe rotor $0. Depending, upon the particular eiccumstances, more or less suspension actuators may be needed. Further, the suspension actuators reed not be equally spaced around the excumference of the rotor. For example, the suspension actuators can have dif ferent sizes (ate lengths) to compensate for non-equal spac: ing. ‘The suspension actuators 60, 62, and 64 are positioned ‘ouside of the thermal processing chamber 12 but ate positioned adjacent to and above the rotor S0, If necessary, the wall of the chamber, which ean be made from a non- ‘magnetic material such as quartz or non-magnetic stainless ‘steel, can be relatively thin at the location where the Sus- pension actuator is placed above the roto. ‘As shown particularly in FIG. §, each suspension aetuator inchides a coil 66 wrapped around a U-shaped magnetic ‘clement 68, The magnetic clement 68 serves a a pole piece tnd cin be either heteropolar or homopolar. The U-shaped ‘magnetic element 68 includes a frst end or surface 70 that is placed above the annular raised portion $4 ofthe rotor SO ad a second end or surface 72 that is placed above aad in alignmeat wi the annular raised portion 86. Inorderto levitate the rotor 0 an electrical current is fed through the coil 66 which ereates magnetic field within the U-shaped magnetic element 68, The fist and second ends 70 and 72 ofthe magnetic element 68 form a magoeticattrac- ‘ion with the annular raised portions 4 and 86 respectively By controlling the magnetic fild generated by the suspen- sion actuator 60, the rotor $0 can be levitated a particular dlistance and suspended within the chamber without contact- jing any adjacent elements. Further, the annular portions $4 and 56 form a close Joop of magnetic Hux with the suxpen- sion actuator 60 and provide radial reluctance evatering, Consequenlly, the angular raised portions $4 and $6 in ‘combination with te fist and secood ends 70 and 72 ofthe ‘magnetic element maintain the rotor at a particular radial position Inder to prevent overheating, each suspension actuator ‘can be installed in a uid-cooled housing, such asa water- ‘cooled housing. The housing can he easily plugged into the ‘chamber 12 for cooling the Suspension actuator. Tt should be understood, however, that the suspension actuator ean be made with a magnetic material capable of withstanding higher temperatures, In his embodiment, no cooling may be necessary, 8 n order to rotate the rotor $0, the system further includes fone or more rotation actuators. For example, as shown in FIG. 3, the system includes sx rotation actuators 74,76, 78, 0, 82and 84, The otation actuators are configsred to rotate the rotor affer the rotor is levitated by the suspension ‘Similar to the suspension actuators, the rotation actuators are positioned outsie of the chamber 12, Again, the cham- ber should te made from a non-magnetic material adjacent to the rotation actuators, sich as quart, stainless steel, and the lke, The wall of the chamber can be relatively thin at the points where the rotation actuator is positioned adjacent to {he rotor, 0 thatthe rotation actuator ean magnetically rotate the rotor without inerference. ‘Referring to FIG. 8, the rotation actuator 74 inches a coll 86 surrounding a C-shaped magnetic element 88. The (C-shaped magnetic clement 88 inclides first cod or surface {90 opposite a second end or surface 92. The teeth 52 of the rotor $0 are positioned in between the first end 90 and the second end 92 of the magnetic element 88. In onder to rotate the rotor 50, an electric current is fed through the coil 86 whieh generates a magnetic feld in the (C-shaped magnetic element 88, which serves asa pole piece In this embodiment, by pulsing or varying the eleetic current through the coil 86, s pulsating or variable magnetic Held can be erested. The variable electie eld is used to ‘successive teeth $2 on the rotor $0, which in tum causes the rotor to rate. The speed of rotation can be fontrlled by controlling the frequency of current fed through the coil 86. In addition, the torque applied to the rotor can be contolled by controlling the amplitude or ceurtent fed through the col, At least two actuators must be present for the rotor to rotate. A single pole ean be used 10 Tock the otot in position. [As deseribed above the suspension actuators are located above the rotor, while the rotation actuators are positioned around periphery of the rotor. By using tis arrangement, of particular advantage, the system allows for some thermal expansion of the tor during heating. Specifically, thermal expansion of the rotor will not ereale physical clearance problems in the system, As shown in FIG. the system can further include atleast, fone position sensor, sueh as a position sensor 94, The position sensor 94 can be used to monitor the vertical position ofthe rotor $0, For example, the postion sensor 94 fn be used to determine the amount the rotce $0 his been raised or lowered when the suspension actuators are oper ting. Further, the position sensor 94 can also monitor the position of the rotor in relation to a horizontal plane 10 tense thatthe rotor is aot wobbling and is instead spinning parallel to the horizontal plane. ‘sides using a single position sensor 94 as shown in FIG. in other embodiments, furlher postion sensors can be used. For example, as shown in FIG. 3, the system can include 4 position sensor for each suspension actuator. As shown, besides position sensor 94, the system includes a position sensor 110 and a position sensor 112 The types of sensors that ean be used inthe system othe resent invention include Hall Effect sensors and/or see sensors. In one embodiment, each position sensor ean Include two different seasors stacked in a vertical araage- ‘ment. In this arrangement, the first sensor can act a8 2 reference sensor in order to calculate the distance the second sensor is from the rotor. For example, an airgap inductance ‘measured by the second sensor ean be compared to the reference inductance for determining the distance from the rotor, % oUS 6,770,146 B2 7 In alton to sensors that monitor the vertical eight of the rolor during levitation, the system can fuelber include ‘sensors that monitor the rotational speed of the rover. For instance, as shown in FIGS, 3 and 4, the system ean inchide 4 rotational sped sensor 98 and a homing sensor 97 Tocated below the rotor at different radi, Rotational sped sensor 95 ‘ean be used to monitor the rotational speed and acceleration ‘of the rotor by monitoring exch tooth that passes: The system ‘ean inelude more than one speed sensor for improving, accuracy. Homing sensor 97, on the other hand, cam indicate the positon ofthe rotor for monitoring the homing position. Spectially, homing sensor 97 ean be placed at the same radial position as an indicator mark on the rotor, The indicator mark canbe, for instance, a note, a tab, a dimple, 2 countetbore, and the like.The homing sensor can be used to sease the location of the indicator mark on the rotor ‘order to place wafers inthe chamber in certain position an to take out the wafers in a certain position, Again, these sensors can be Hall Effet sensors, laser sensors or photo During operation of the thermal processing system illus trated in FIG. 1, the rotor is frst lifted up from a landing position by activating the suspension actuators. The rotor ‘can be contolled at an idle position where the rotor is levitated without contacting the chamber walls and other surfaces, The distance betwoen the landing and levitated positions of the rotor may be, for instance, in a range of from about 015 inches to about (1 inches ‘Once levitated, the rotation atuators can be used 10 rotate the rotor. The speed sensor 95 can also be included within the chamber to monitor the acocleration and speed of the ror a8 it rates, Once a semiconductor wafer supported by the rotor is processed according 0 a desired resll totation ofthe rotor 5S ceased. Nexl, the rotor can be lowered from its idle Position to the landing position, The suspension actuators ‘ean be used to slowly drop the rotor to prevent surface “damage on the rotor of onthe surface upon whieh the rotor In one embodiment, contol ofthe rotation ofthe wafer ‘can be completly automated. For example, a8 shown in TIG. 1, the controller 40 is connected tothe power controller 22. The power contoller 2 can be, in tum, in communi ‘ation with the suspension atuators via line 96 and with the rotation aetuators via line 98 for contolling the electic ccurent that is fed t© the actuators, which, controls the strength of the magnetic field. As described above, the power controller 22 ean also be connected tothe lamps 26 Via Tine 100. It should be understond, that more than one power controller can be used. As also shown in FIG. 1, the cootroller 40 is furthor ‘configured (0 receive input from the temperature sensing ‘devices 28 and from the position sensor 94, the speed sensor 98 and the homing sensor 97 via input line 102. In this manner, the controller 40 can be used to rotate the wafer 14 and simultaneously beat the wafer using lamps 26 During processing, the controller can receive information from the postion sensor, the speed sensor and the homing ‘sensor. The sensors ean provide continuous feedback to the ‘control system to adjust the position of the wafer so it ‘maintains alignment with a horizontal plane and is rotating at an appropriate speed, The algorithm within the controler ‘can continually update the magnetic eld in each suspension actuator and rotation actuator so thatthe wafer spins sub- Stantially parallel tothe horizontal plane and atthe desired fate, Further, the cooteoller ean receive temperature infor 10 ation from the temperature sensing devices 28 andthe ‘ura, control the amount of light energy being emitted by the lamps 26. 1 should be understood, however, that ia. an iterative embodiment conroller 40 can be used solely to Aulomate the wafer rotation system, Likewise, the contolle ean receive information fom the position sensor 94 and levitate and rotate the wafer accord- ingly. During rotation, the postion sensor ean also indicate to the controller 40 whether or oot the wafer is rotating in alignment with a horizontal plane. Should it be determined ‘thatthe wafer isnot in alignment, the controller 40 can be configured fo contol the magnetic field in each suspension actuator 60, 62, and 64 for making the wafer spin subst ‘ially parallel 0 the plane, Consequently, during 2 heating process in the chamber, the controler 40 canbe configured to levitate and control the vertical height of the rotor, can rotate and adjust the rt tional speed of the rotor, and ean also home the rotor Referring now to FIG. 6, an altemative embodiment of waler levitation and rotation system i illustrated. embodiment, a rotor 180 is surrounded by a rota 174. Rotation device 174 is represented by a ring clement thats capable of creating a magnetic field which esuses the ror 180 to rotate. Inotder to levitate the rotor 150, the system includes theee suspension actuators 160, 162, and 164, In this embodiment, the suspension actuators 160, 162, and 164 not only control the axial position ofthe race 150 but also contol the radial position ofthe rotor. For example, as showa, the rolor includes a conically shaped surface 152 ‘The suspension actuators 160, 162, and 164 ate positioned adjacent 0 the concally shaped surface 182 at a eomple- ‘mentary angle. Consequently, in this arrangement, the sus- pension actuators not only apply’ force to the rotor in the axial dizcetion but also in he radial ditecion, By controlling the strength of the magnetic field in exch ofthe suspension actuators, the rotor 150 can be levitated and maiatained at = particular ead position Rotor 150 as showa in FIG. 6 ean include & plurality of racial tech similar othe embodiment illustrated in FIGS, 3 nd 4, The rial teth ean be used to facilitate rotation ofthe rotor and can be used to monitor the position of the rotor Referring to FIG. 7, a further alternative embodiment of 4 magoctic rotation system is illustrated, In this embodiment, the system includes a rotation device 274 placed! adjacent to a rotor 250, Suspension actuators as ‘eseribed above may also be used in the system which are ‘ot shown ‘As showin, the rotor 250 includes a plurality of teth 252 loestod.on the bottom surface of the rotor. The rotation vice 274 includes a magnetic disk 276 coupled toa motor 278. On the periphery of the disk 276 are located a number ‘of altemating North-South permanent magnets 280 arranged with the magnetic pole ends inthe radial dzeetion, The disk 276 is located outside of the process chamber and oriented either vertically (as shown) or horizontally around the outer ameter of the rotor. a this arrangement, the motor 278 is used to rotate the disk 276, which in turn, rotates the ctor 280 by interacting ‘with the teeth 252. In particular, the rotating permanent ‘magnets induce # fil in the rotor. The induced field causes an atrative foree to be set up betwen the rotor and each Totaling permanent magnet. As the magnet turns and moves ‘way from th induced Held oa the rotor, the attractive foree results in a torque which causes the rotor to roate. I is believed that teeth 252 are not necessary in order to rotateUS 6,770,146 B2 i the rotor, Further it should be undersood that more than one rotation device 274 ean be placed around the periphery of the rotor 250 as desired These and other modifications and variations to the present invention may be practiced by those of ordinary’ skill tn the art, without departing from the spzit and scope of the preseatinvention, which is more particularly set fort in the appended claims. In addition, it should be understood that aspects of the various embodiments may be interchanged both in whole or in part. Furthermore, thse of ordinary skill inthe aa will appreciate that the foregoing description is by ‘way of example only and 38 not intended to limit the invention so further described in such appended clsims. ‘What is claimed is: 1. Assystem for processing semiconductor wafers com- prising: thermal processing chamber adapted to contain semi ccondictor wafers; 4 heating deviee for beating semiconductor waters con- tained within said chamber «rotor positioned within said thermal processing chamber ‘having a top and bottom, said eotoe being configured to support a semiconductor wafer, said rolor having & circular shape and being comprised of a material ‘cipable of being influenced by @ magnetic force; and at least one rotation actuator having a fest rotation surface spaced from a second opposing rotation surface, the fist rotation surface being positioned above the rotor and facing the top of the rotor, the second rotation ‘Surface being positioned below the rotor snd facing the bottom of the rotor, sid rotor being positioned in between said first and second rotation surfaces, said ‘lution actuator being configured to generate a mag~ relic field that causes said rolor 10 rotate without ‘contacting sad ror. 2. Asysiem 38 defined in claim 1, wherein said rotation actuator is positioned oulside of said thermal processing chamber, 3. Asystem 35 defined in claim 1, wherein sid rotation actuator comprises « C-shaped magnetic element having @ Pair of opposing poles that define said first and second Totation surfaces, said C-shaped magnetic element being placed in operative association with an electric coil thal enerates said magnetic field when an electric cute is fed Uhrough said col 4. A systom a defined in claim 1, wherein said rotor includes Spaced apart cadial teeth, said teeth being posi- tioned in hetween ssid frst and second opposing rotation surfaces. '. A system a8 defined in claim 4, wherein sid rotation actuator is configured to generate & variable magnetic field ‘which acts upon said radial teeth to rotate ssid rotor 6. A system as delined in claim 1, wherein said system includes at least three rotation actuators. 7. A system as defined in claim 1, wherein said system includes et least six rotation actuators, '8. Asysiem 38 defined in claim 1, futher comprising a least one suspension actuator positioned above ssid rotor, ‘aid suspension actuator being configured to generate a ‘magnetic field and levitate said rotor during rotation. 9, A system as defined in claim 8, whervin said system includes atleast three suspension actuators spaced around ‘tid rotor 10, Asystem as defined in claim 8, wherein sad suspen- sion atuator includes 3 fist suspension sirace andl a second suspension surface that face said roto, suid surfaces being capable of being magnetized Tor levitating aid rotor o 12 UL. A system as defined in claim 10, wherein sad eotor ‘includes first and second annular raised portion, said frst and second annular raised portions being positioned below Said firs and second suspension surfaces respectively 12. A system as defined in claim 8, further comprising 2 position senor and speed) sensor located adjacent 10 said ‘olor, sid position senor for monitoring the vertical position of said 110, sid speed sensor for monitoring the speed af said toe 13. A system as defined in claim 1, wherein said heating device comprises a pluality of lig energy sources posi- tioned outside said chamber 14, Asysiem as defined in claim 1, further comprising ‘temperature sensing deviee for sensing the temperature ‘of a semiconductor wafer contained in sid thermal processing chamber; and 4 conioller in communication with said temperature sensing deviee, said controller reesiving temperature information from said temperature sensing deviee and, based on said information, adjusting Said heating device for cootelling the temperature of said semicon ductor wafer within preset limits. 15, A sysiem for processing semiconductor wafers com- prising: 4 thermal processing chamber adapted to contain semi ‘conductor wafers; «heating device for heating semiconductor wafers con- tained within said chambers 4 rotor positioned within Said thermal processing chamber, said rotor being configured to support a semiconductor wate, sad rotor having a circular shape tind being comprised of a material capable of being influenced by a magnetic force; at least one suspension actuator positioned above said rotor, said suspension actuator including a frst suspen sion surface and a second suspension surface that exch face Said rotor, said rotor including fist and second annular raised portions, said first and second raised portions being positioned below ssid first and second Suspension surfaces respectively, said suspension sctuator being configured to generate a magnetic field through said first and second suspension surfaces for levitating said rotor without contacting said rotor, aud 4 rotation device that generates a magnetic field for rotating aid rotor when levitated 16, Asystem as defined in claim 18, wherein suid system includes atleast thee suspension actuators spaced around sad toe 17. Asystem as defined in elsim 18, wherein said beating devise comprises a plurality of light energy sourecs. TS, Asystem as defined in claim 15, further eomprsing 2 position sensor and 2 specd sensor located adjacent to said ‘olor, sid postion senor for monitoring the vertical position of said rotor, sid spoed sensor for monitoring the speed of| sad oto, 19. A system as defined in claim 15, wherein said sus- pension actuator comprises a U-shaped magnetic element having pair of opposing ends that define the fst and second suspension siefaces, suid U-shaped magnetic ele- ‘ment being placed in operative association with an electric col that generates a magnetic field when an electric eurent is fed through said col 20. A.sysiem as defined in claim 18, whercin said system includes at least two suspension aclators spaced around sad rotor, and wherein said system further eomprises: 4 position sensor for monitoring the vertical position of ‘aid rotor in relation to a horizontal plas andUS 6,770,146 B2 a 4 controller ia communication with said position sensor ‘and with said suspension actuators, said controller being configured to receive information from said position sensor regarding the position of said rotor and, based on said information, to independently adjust each of sid suspension actuators for levitating said rotor & termined distance and for maintaining said rotor parallel to std horizontal plane 21 A system a6 defined ia elaim 20, wherein said con= twoller is further configured to contol sid rotation device for contollng the rotation of said rotor. 22, Asystem as defined in claim 18, wherein said rotation ‘device includes at least one rotation actuator having firs rotation surface spaced from a second opposing rotation surface, sid rotor being positioned in between sad first and second rotation surfaces, suid rotation actuator being con- figured to generate @ magnetic field that eauses such rotor 10 rotate without contacting said rotor. 23. A system lor processing semiconductor wafers com. prising: 4 thermal processing chamber adapted to contain semi conductor wafers; 4 heating device for heating semiconductor wafers con- tained within said chamber, 4 rolor positioned within said thermal processing chamber, std rotor being configured to. support & Semiconductor Wafer, sad rotor having a circular shape and being comprised of « material capable of being influenced by a magnetic foree, said rotor including spaced apart radial teeth; and at least one rotation actuator positioned adjacent to said rotor the ration actuator including 4 fest rotatio surfice spaced from a second opposing rotation Surface, the spaced apart radial teeth of the rotor being rotatably positioned in between the first and second rotation sirfaces, said rotation actuator being contig- tured to generate pulsating magnetic ficld which acts ‘upon Said radial tect to rotate said rotor. 24, Asystem asdefined in claim 28, wherein said rotation actuator includes 4 magnetic element having a paic of ‘opposing ends that define the first rotation surface and the second opposing rotation surface, said! magnetic element being in operative association with a magnetic coil that enerates said magnetic fold when an electric eurtent is fed through said el 25. A system as defined in claim 23, wherein said system includes at least three rotation actuators 26. Asystem as defined in claim 23, further comprising a least one suspension actuator positioned above said rotor, ‘tid suspension actuator being configured © generate a ‘magnetic field and levitate sud rolor during rotation. 27. A system as defined in claim 26, wherein said system ‘includes atleast thee suspension aetuators spaced around ‘tid rotor 28. A system as defined in claim 26, wheevin said suse pension actuator includes a frst suspension surface and & ‘Second suspension surface that face said rotor, said surfaces ‘capable of being magnetized for levitating said ror. 29. A system as defined in claim 28, wherein sad rotor includes fist and second annulae raised portions, si frst and second suspension surfaces respectively. ‘30. system as defined in claim 26, wherein said system ‘includes at leat two suspension actuators spaced around sid rotor andl wherein said system further comprises: 4 position seasor for monitoring the vertical postion of ‘uid rotor in relation to & horizotal plane; sad 14 4 contoller in communication with said position senor and with said suspension actuators, said controller ‘being configured to receive information from said positon sensor regarding the position of said rotor and, ‘based om sud information, to independently adjust each of sad suspension actuators for levitating said rotor determined distance and for maintaining said rotor parallel to sai horizoatal plane 31. Asystom a8 defined in claim 26, wherein said rotation actuator i positioned outside of Said thermal processing chamber. 32. A system for processing semiconductor walees com- prising: 4 thermal processing chamber adapted 10 contain semi ‘conductor wafers: heating device for heating semiconductor wafers con- tained in said chamber; rotor positioned within said theemal processing chamber, siid rotor being configured to support & semiconductor wafer supporting said substrate holder, Said rotor having a circular shape and being comprised ‘of « material capable of being influenced by a magnetic force; atleast one rotation setuator positioned adjacent wo said rotor outside of said thermal processing chamber, said rotation actuator comprising a rotation element placed in operative association with a magnetic coll that field when aa electric eurent is fed through si eo, sid rotor including spaced apart radial teeth and wherein said rotation actuator is eon= figured to generate a pulsating magnetic field which acts upon said racial eth to rotate sad rotors a least one suspension actuator positioned above said rotor outside of said thermal processing chamber, said suspension actuator being configured to generate a magnetic ficld and levitate sid rotor during rotation; and 4 controller in communication with ssid rotation actustor tnd said suspension actuator, said controller being ‘configured to conteol ssid rotation actuator and said ‘suspension actuator for levitating and rotating said rovor at selected times. 233. Asystcm as defined in claim 32, wherein suid rotation actuator defines a first rotation surface and a second rotation Surface, said radial eth of said rotor being spaced in betwoen said first and second rotation surfaces 34. A system as defined in claim 32, wherein said system ‘includes at least three suspension acluioes positioned above said rotor '35. Asystem as defined in claim 32, wherein said rotor has 4 conically-shaped surface and) wherein suid suspension {ctuator is positioned adjacent to said surface for levitating sid roto and for maintaining said rotor at a particular radial And also axial position 36. A system as defined in claim 32, wherein said sus- pension actuator includes a frst suspension surface and second suspension surface that face said rotor, sid surfaces capable of being magnetized for levitating said rotor. 37. A system as defined in claim 36, wherein said rotor includes first and second annular ruised portions, sid frst and second annufar raised portions being positioned below said frst and second suspension surfaces respectively 38. A system as defined in claim 32, wherein said system includes at least two suspension actuators spaced around said rotor and wherein said system further comprises. aUS 6,770,146 B2 15 position sensor for monitoring the vertical position of said Totor in relation to borizoatal plane, said position sensor boeing in communication with said controller and wherein ‘tid controller is configure to receive information from said positon sensor and, based on said information, to indepen- 16 ently control said suspension actuators for levitating said olor a selected distance and for maintaining said rotor parallel to said hocizontal plane