VNS3NV04DP-E

OMNIFET II
fully autoprotected Power MOSFET

Features

Max on-state resistance (per ch.) RON 120 mΩ

Current limitation (typ) ILIMH 3.5 A
Drain-source clamp voltage VCLAMP 40 V

■ ECOPACK®: lead free and RoHS compliant SO-8

■ Automotive Grade: compliance with AEC
guidelines
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
Description
The VNS3NV04DP-E device is made up of two
monolithic chips (OMNIFET II) housed in a
standard SO-8 package. The OMNIFET II is
designed using STMicroelectronics™ VIPower™
M0-3 technology and is intended for replacement
of standard Power MOSFETs in up to 50 kHz DC
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring
voltage at the input pin

Table 1. Device summary

Order codes
Package
Tube Tape and reel

SO-8 VNS3NV04DP-E VNS3NV04DPTR-E

September 2013 Doc ID 018529 Rev 2 1/21

www.st.com 1
Contents VNS3NV04DP-E

Contents

1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2 Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3 Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 16
3.4 Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

2/21 Doc ID 018529 Rev 2

VNS3NV04DP-E List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 8. Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 9. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 10. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 11. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Doc ID 018529 Rev 2 3/21

List of figures VNS3NV04DP-E

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 12. Static drain-source on resistance vs input voltage (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 13. Static drain-source on resistance vs input voltage (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 15. Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 17. Turn-on current slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 18. Turn-on current slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 19. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 20. Turn-off drain source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 21. Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 23. Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 24. Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 26. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 27. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 30. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 31. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 32. Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4/21 Doc ID 018529 Rev 2

VNS3NV04DP-E Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

DRAIN1 DRAIN2

OVERVOLTAGE OVERVOLTAGE
CLAMP CLAMP

INPUT1 INPUT2
GATE GATE
CONTROL CONTROL

LINEAR LINEAR
OVER CURRENT CURRENT
LIMITER LIMITER OVER
TEMPERATURE TEMPERATURE

SOURCE1 SOURCE2

Figure 2. Configuration diagram (top view)

SOURCE 1 1 8 DRAIN 1
INPUT 1 DRAIN 1
SOURCE 2 DRAIN 2
INPUT 2 4 5 DRAIN 2

Doc ID 018529 Rev 2 5/21

Electrical specifications VNS3NV04DP-E

2 Electrical specifications

Figure 3. Current and voltage conventions

IIN1 RIN1 ID1

INPUT 1 DRAIN 1
IIN2 RIN2 ID2
VIN1 VDS1
INPUT 2 DRAIN 2
VIN2
SOURCE 1 SOURCE 2 VDS1

2.1 Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDSn Drain-Source Voltage (VINn = 0 V) Internally clamped V

VINn Input voltage Internally clamped V
IINn Input current +/- 20 mA
RIN MINn Minimum input series impedance 220 Ω
IDn Drain current Internally limited A
IRn Reverse DC output current -5.5 A
VESD1 Electrostatic discharge (R = 1.5 KΩ, C = 100 pF) 4000 V
Electrostatic discharge on output pins only (R = 330 Ω,
VESD2 16500 V
C = 150 pF)
Ptot Total dissipation at Tc = 25 °C 4 Ω
Tj Operating junction temperature Internally limited °C
Tc Case operating temperature Internally limited °C
Tstg Storage temperature -55 to 150 °C

6/21 Doc ID 018529 Rev 2

VNS3NV04DP-E Electrical specifications

2.2 Thermal data

Table 3. Thermal data
Symbol Parameter Max value Unit

Rthj-lead Thermal resistance junction-lead (per channel) 30 °C/W

Rthj-amb Thermal resistance junction-ambient 80(1) °C/W
2
1. When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 μm thick) connected
to all DRAIN pins of the relative channel

2.3 Electrical characteristics

Values specified in this section are for -40 °C < Tj < 150 °C, unless otherwise stated.

Table 4. Off
Symbol Parameter Test conditions Min Typ Max Unit

Drain-source clamp
VCLAMP VIN = 0 V; ID = 1.5 A 40 45 55 V
voltage
Drain-source clamp
VCLTH VIN = 0 V; ID = 2 mA 36 V
threshold voltage
Input threshold
VINTH VDS = VIN; ID = 1 mA 0.5 2.5 V
voltage
Supply current from
IISS VDS = 0 V; VIN = 5 V 100 150 µA
input pin

Input-source clamp IIN = 1 mA 6 6.8 8 V

VINCL
voltage IIN = -1 mA -1 -0.3 V
Zero input voltage VDS = 13 V; VIN = 0 V; Tj = 25 °C 30 µA
IDSS drain current
(VIN = 0 V) VDS = 25 V; VIN = 0 V 75 µA

Table 5. On
Symbol Parameter Test conditions Min Typ Max Unit

Static drain-source on VIN = 5 V; ID = 1.5 A; Tj = 25 °C — — 120 mΩ

RDS(on)
resistance VIN = 5 V; ID = 1.5 A — — 240 mΩ

Tj = 25 °C, unless otherwise specified

Table 6. Dynamic
Symbol Parameter Test conditions Min Typ Max Unit

Forward
gfs (1) VDD = 13 V; ID = 1.5 A — 5.0 — S
transconductance
COSS Output capacitance VDS = 13 V; f = 1 MHz; VIN = 0 V — 150 — pF

Doc ID 018529 Rev 2 7/21

Electrical specifications VNS3NV04DP-E

Table 7. Switching
Symbol Parameter Test conditions Min Typ Max Unit

td(on) Turn-on delay time 90 300 ns

tr Rise time VDD = 15 V; ID = 1.5 A; 250 750 ns
Vgen = 5 V; Rgen = RIN
td(off) Turn-off delay time 450 1350 ns
MIN = 220 Ω (see Figure 4)
tf Fall time 250 750 ns
td(on) Turn-on delay time 0.45 1.35 µs
tr Rise time VDD = 15 V; ID = 1.5 A; 2.5 7.5 µs
Vgen = 5 V; Rgen = 2.2 KΩ
td(off) Turn-off delay time (see Figure 4) 3.3 10.0 µs
tf Fall time 2.0 6.0 µs
VDD = 15 V; ID = 1.5 A;
(dI/dt)on Turn-on current slope Vgen = 5 V; 4.7 A/µs
Rgen = RIN MIN = 220 Ω
VDD = 12 V; ID = 1.5 A; VIN = 5 V;
Qi Total input charge 8.5 nC
Igen = 2.13 mA (see Figure 7)

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ Max Unit

VSD(1) Forward on voltage ISD = 1.5 A; VIN = 0 V 0.8 V

trr Reverse recovery time 107 ns
Reverse recovery ISD = 1.5 A; dI/dt = 12 A/µs;
Qrr 37 µC
charge VDD = 30 V; L = 200 µH
(see Figure 5)
Reverse recovery
IRRM 0.7 A
current
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

-40 °C < Tj < 150 °C, unless otherwise specified

Table 9. Protections
Symbol Parameter Test conditions Min Typ Max Unit

Ilim Drain current limit VIN = 5 V; VDS = 13 V 3.5 5 7 A

Step response current
tdlim VIN = 5 V; VDS = 13 V 10 µs
limit
Overtemperature
Tjsh 150 175 200 °C
shutdown
Tjrs Overtemperature reset 135 °C
Igf Fault sink current VIN = 5 V; VDS = 13 V; Tj = Tjsh 10 15 20 mA
Starting Tj = 25 °C; VDD = 24 V;
Single pulse avalanche VIN = 5 V; Rgen = RIN MIN = 220 Ω;
Eas 100 mJ
energy L = 24 mH (see Figure 6
and Figure 8)

8/21 Doc ID 018529 Rev 2

VNS3NV04DP-E Electrical specifications

Figure 4. Switching time test circuit for resistive load

VD

Rgen
Vgen

ID

90%

tr tf
10%
t
td(on) td(off)
Vgen

Figure 5. Test circuit for diode recovery times

A
A
D
I FAST L=100uH
OMNIFET DIODE

S B
B

220Ω D
VDD
Rgen
I
OMNIFET

Vgen
S

8.5 Ω

Doc ID 018529 Rev 2 9/21

Electrical specifications VNS3NV04DP-E

Figure 6. Unclamped inductive load test circuits

RGEN
VIN

PW

Figure 7. Input charge test circuit

VIN GEN

ND8003

10/21 Doc ID 018529 Rev 2

VNS3NV04DP-E Electrical specifications

Figure 8. Unclamped inductive waveforms

Doc ID 018529 Rev 2 11/21

Electrical specifications VNS3NV04DP-E

2.4 Electrical characteristics curves

Figure 9. Source-drain diode forward Figure 10. Static drain-source on

characteristics resistance
Vsd (mV)
Rds(on) (mohms)
1100
1000
1050 Tj=-40ºC
900
Vin=0V
1000 Vin=2.5V
800
950
700

900 600

850 Tj=25ºC
500

800 400

750 300
Tj=150ºC
700 200

650 100

0
600
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55
0 1 2 3 4 5 6 7 8 9 10 11 12
Id(A)
Id (A)

Figure 11. Derating curve Figure 12. Static drain-source on

resistance vs input voltage
(part 1)
Rds(on) (mohms)
300

275

250

225 Tj=150ºC

200

175 Id=3.5A
Id=1A
150

125 Tj=25ºC

100
Tj=-40ºC Id=3.5A
75 Id=1A

Id=3.5A
50
Id=1A
25

0
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)

Figure 13. Static drain-source on Figure 14. Transconductance

resistance vs input voltage
(part 2)
Rds(on) (mohms) Gfs (S)
250 11

225 10
Vds=13V Tj=-40ºC
Id=1.5A 9
200
Tj=25ºC
8
175
Tj=150ºC
Tj=150ºC 7
150
6
125
5
100
4
75 3
Tj=25ºC
50 2
Tj=-40ºC
25 1

0 0
3 3.5 4 4.5 5 5.5 6 6.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Vin(V) Id (A)

12/21 Doc ID 018529 Rev 2

VNS3NV04DP-E Electrical specifications

Figure 15. Static drain-source on Figure 16. Transfer characteristics

resistance vs Id

Rds(on) (mohms) Idon (A)

250 6

225 5.5
Vds=13.5V
Vin=5V 5
200
Tj=150ºC
4.5
175
4
Tj=150ºC
150
3.5
125 3
Tj=25ºC Tj=-40ºC
100 2.5

2
75
1.5
50 Tj=25ºC
Tj= - 40ºC 1
25
0.5
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Id (A) Vin (V)

Figure 17. Turn-on current slope (part 1) Figure 18. Turn-on current slope (part 2)

di/dt(A/us) di/dt(A/usec)
5 1.75

4.5
Vin=5V 1.5
4 Vdd=15V
Vin=3.5V
Id=1.5A 1.25 Vdd=15V
3.5
Id=1.5A
3
1
2.5
0.75
2

1.5 0.5

1
0.25
0.5

0 0
0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 250 500 750 1000 1250 1500 1750 2000 2250 2500

Rg(ohm) Rg(ohm)

Figure 19. Input voltage vs input charge Figure 20. Turn-off drain source voltage
slope (part 1)

Vin (V) dv/dt(V/usec)

9 300

275
8
Vds=1V Vin=5V
250
7
Id=1.5A Vdd=15V
225
Id=1.5A
6 200

175
5
150
4
125

3 100

75
2
50
1
25

0 0
0 1 2 3 4 5 6 7 8 9 10 11 0 500 1000 1500 2000 2500
250 750 1250 1750 2250
Qg (nC)
Rg(ohm)

Doc ID 018529 Rev 2 13/21

Electrical specifications VNS3NV04DP-E

Figure 21. Turn-off drain-source voltage Figure 22. Capacitance variations

slope (part 2)

dv/dt(V/usec) C(pF)
300 350
275
250 Vin=3.5V
300
Vdd=15V f=1MHz
225
Id=1.5A Vin=0V
200 250
175

150 200
125
100 150
75

50 100
25
0 50
0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 35
250 750 1250 1750 2250
Vds(V)
Rg(ohm)

Figure 23. Switching time resistive load Figure 24. Switching time resistive load
(part 1) (part 1)
t(usec) t(nsec)
4 900

3.5 800
td(off) tr Vdd=15V
Vdd=15V
3 Id=1.5A 700 Id=1.5A
Vin=5V tr Rg=220ohm
600
2.5

500
2
tf 400
1.5 td(off)
300
1
tf
200

0.5 td(on) td(on)

100

0 0
0 500 1000 1500 2000 2500 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
250 750 1250 1750 2250
Vin(V)
Rg(ohm)

Figure 25. Output characteristics Figure 26. Normalized on resistance vs

temperature

Id (A)
Rds(on) (mOhm)
5
4
Vin=5V
4.5
Vin=4V 3.5
4 Vin=5V
Id=1.5A
3.5 3
Vin=3V
3
2.5
2.5
2
2

1.5 1.5

1
1
0.5

0 0.5
0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175

Vds (V) Tc )ºC)

14/21 Doc ID 018529 Rev 2

VNS3NV04DP-E Electrical specifications

Figure 27. Normalized input threshold Figure 28. Normalized current limit vs
voltage vs temperature junction temperature

Vinth (V) Ilim (A)

2 10

1.8 9
Vds=Vin Vin=5V
1.6 8
Id=1mA Vds=13V
1.4 7

1.2 6

1 5

0.8 4

0.6 3

0.4 2

0.2 1

0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)

Figure 29. Step response current limit

Tdlim(usec)
13

12.5
Vin=5V
12
Rg=220ohm
11.5

11

10.5

10

9.5

8.5

7.5
5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)

Doc ID 018529 Rev 2 15/21

Protection features VNS3NV04DP-E

3 Protection features

During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC up to 50 KHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100 µA) flows into the INPUT pin in order to supply the internal circuitry.
The following sections describe the device features.

3.1 Overvoltage clamp protection

Internally set at 45 V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability. This
feature is mainly important when driving inductive loads.

3.2 Linear current limiter circuit

Limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter
is active, the device operates in the linear region, so power dissipation may exceed the
capability of the heatsink. Both case and junction temperatures increase, and if this phase
lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.

3.3 Overtemperature and short circuit protection

These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area ensures
fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the
range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted
when the chip temperature falls of about 15 °C below shutdown temperature.

3.4 Status feedback

In the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a
diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from
a low impedance source, this current may be used in order to warn the control circuit of a
device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not
able to supply the current Igf, the INPUT pin falls to 0 V. This however not affects the device
operation: no requirement is put on the current capability of the INPUT pin driver except to
be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit.

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VNS3NV04DP-E Package and packing information

4 Package and packing information

4.1 ECOPACK® packages

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

4.2 SO-8 mechanical data

Table 10. SO-8 mechanical data
mm
Dim.
Min. Typ. Max.

A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c 0.17 0.23
D(1) 4.80 4.90 5.00
E 5.80 6.00 6.20
E1(2) 3.80 3.90 4.00
e 1.27
h 0.25 0.50
L 0.40 1.27
L1 1.04
k 0° 8°
ccc 0.10
1. Dimension “D” does not include mold Flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.

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Package and packing information VNS3NV04DP-E

Figure 30. SO-8 package dimension

0016023 D

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VNS3NV04DP-E Package and packing information

4.3 SO-8 packing information

Figure 31. SO-8 tube shipment (no suffix)

Base Q.ty 100

B
C Bulk Q.ty 2000
Tube length (± 0.5) 532
A 3.2
A
B 6
C (± 0.1) 0.6
All dimensions are in mm.

Figure 32. Tape and reel shipment (suffix “TR”)

REEL DIMENSIONS

Base Q.ty 2500

Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm. End

Start

Top No components Components No components

cover
tape 500mm min
Empty components pockets 500mm min
saled with cover tape.

User direction of feed

Doc ID 018529 Rev 2 19/21

Revision history VNS3NV04DP-E

5 Revision history

Table 11. Document revision history

Date Revision Changes

09-Mar-2011 1 Initial release.

18-Sep-2013 2 Updated Disclaimer

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VNS3NV04DP-E

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