ASSIGNMENT NO : 03

ANALOG IC DESIGN LAB

NAME: KOLA SRIKANTH
ENROLLMENT NO/ROLL NO : MT21MVD013
DATE OF SUBMISSION :24/01/2022
Q1. A) Simulate Example 9.1 And 9.2 From Baker Testbook.
B) Comment On How 9.1 Is Related To 9.2.

Q2. Plot Id Vs Vds Charc's Of Nmos For Below Cases.

A) Temperature Variations For
1) Military Applications
2) Commercial Applications
B) Supply Voltage Variations For ±10% Change.

Q3. A) Simulate Example 9.4 V-I Converter From Baker Testbook.

B) Make Appropriate Changes In The V-I Converter And Implement Using
Pmos.
C) Find Current And Linearity In Both The Cases At -55c,0c,25c,75c And
125c Temperatures And Comment On The Changes Observed

Q1
Example 9.1
Code
example
vin 1 0 1.8v
va 1 2 0v
R 2 0 5MEG
Iin 2 0 1u
.dc vin 0 10 0.01
.control
run
plot i(va)
.endc
.end
Simulation result

Example 9.2
Code
example
.include cmosedu_models.txt
m1 1 3 0 0 NMOS l=180n w=180n
vg 3 0 2v
va 2 1 0v
vds 2 0 5v
.dc vds 0 10 0.01
.control
run
plot i(va)
.endc
.end
simulation

Q2)
Military application
Code
example
.include cmosedu_models.txt
m1 1 3 0 0 NMOS l=180n w=180n
vg 3 0 2v
va 1 2 0v
vds 2 0 5v
.dc vds 0 5 0.01
.control
destroy all
set temp=-55
run
set temp=0
run
set temp=70
run
set temp=125
run
let i0=-dc1.i(va)
let i1=-dc2.i(va)
let i2=-dc3.i(va)
let i3=-dc4.i(va)
plot i0 i1 i2 i3
end
.endc

simulation

Commercial application
Code
example
.include cmosedu_models.txt
m1 1 3 0 0 NMOS
vg 3 0 2v
va 1 2 0v
vds 2 0 5v
.dc vds 0 5 0.01
.control
destroy all
set temp=0
run
set temp=25
run
set temp=70
run
let i0=-dc1.i(va)
let i1=-dc2.i(va)
let i2=-dc2.i(va)
plot i0 i1 i2
end
.endc
Simulation

Example 9.4
Code
example
.include cmosedu_models.txt
m1 0 1 2 0 PMOS l=1u w=10u
vg 3 0 -2v
va 2 3 0v
vsd 4 0 5v
r1 3 4 10Meg
.dc vg 0 5 0.01
.control
destroy all
set temp=-55
run
set temp=0
run
set temp=70
run
set temp=125
run
let i0=-dc1.i(va)
let i1=-dc2.i(va)
let i2=-dc1.i(va)
let i3=-dc2.i(va)
plot i0 i1 i2 i3
end
.endc
Simulation

Conclusion
 In question one example 9.1 and example 9.2 shows that mosfet acts as circuit is 9.1
 In question two long channel mosfet is simulated for different temperature values shows id
saturates at different values
 In question three long channel mosfet pmos with w/l ratio of 10:1 is simulated for different
temperature values