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5 Diode
5 Diode
NAME
L-2/T-2
Classification of materials
Intrinsic Semiconductor
• At room temperature
very few conduction
electrons
• Hole can’t move outside
of valence band
• If e- moves then hole
creates
Extrinsic Semiconductor
• Diffusion
• Immobile ionized charge
• Built in potential
• At equilibrium diffusion force equals to
electric force
Biasing
Reverse Biasing Forward Biasing
• Majority carrier doesn’t
contribute to junction • Move hole and e-
current
• Reduced depletion
• Minority carrier produce layer
low junction current
• At a certain voltage
• Increased depletion acts like a conducting
layer path
• E increase, so speed of
minority carrier
0.0259 V at T = 300 K
• Exponential Model
✓ Graphical Analysis
✓ Iterative Analysis
Modeling Diode Forward Characteristics
2.
Diode Circuit Analysis
2.
Diode Circuit Analysis
3. Assume 0.7V drop across the diode. 5. Find the value of V, I
Expression of output
𝜃 −𝜃
We get conduction for 3602
𝑜 fraction of the
1
𝑉𝑠 𝑠𝑖𝑛𝜃 = 𝑉𝐷
Rectifier
• Center Tapped Full Wave Rectifier
Transfer Characteristic
Vs Vs-VD
-Vs
0
Vs-2VD |vs(t)|– 2VD; |vs(t)|>2VD
vo(t) =
0; otherwise
1.
0.7 V ; Vin>0.7
Vo =
Vs ; else
2. 3.
Clipper/Limiter Circuit
4.
5.7 V ; Vin>5.7
Vo =
Vs ; else
5.
Clipper/Limiter Circuit
6. Clipper circuit with Zener diode
7.
Transfer
Characteristics?
Clipper/Limiter Circuit
Transfer
Characteristics?
Clamper Circuit
▪ Positive
Clamper
▪ Charging &
discharging
Clamper Circuit
3. 4.
5.
Self Study
Self Study