SKiiP 24NAB12T4V1

Absolute Maximum Ratings

Symbol Conditions Values Unit
Inverter - IGBT
VCES Tj = 25 °C 1200 V
IC λpaste=0.8 W/(mK) Ts = 25 °C 48 A
Tj = 175 °C Ts = 70 °C 39 A
IC λpaste=2.5 W/(mK) Ts = 25 °C 53 A
Tj = 175 °C Ts = 70 °C 43 A
ICnom 35 A
MiniSKiiP® 2 ICRM 105 A
VGES -20 ... 20 V
VCC = 800 V
Converter-Inverter-Brake tpsc VGE ≤ 15 V Tj = 150 °C 10 µs
(CIB) VCES ≤ 1200 V
Tj -40 ... 175 °C
Chopper - IGBT
SKiiP 24NAB12T4V1 VCES Tj = 25 °C 1200 V
IC λpaste=0.8 W/(mK) Ts = 25 °C 48 A
Tj = 175 °C Ts = 70 °C 39 A
Features* IC λpaste=2.5 W/(mK) Ts = 25 °C 53 A
• Trench 4 IGBTs Tj = 175 °C Ts = 70 °C 43 A
• Robust and soft switching freewheeling
diodes in CAL technology ICnom 35 A
• Highly reliable spring contacts for ICRM 105 A
electrical connections VGES -20 ... 20 V
• UL recognized: File no. E63532 VCC = 800 V
tpsc VGE ≤ 15 V Tj = 150 °C 10 µs
Typical Applications
VCES ≤ 1200 V
• Inverter up to 22 kVA
Tj -40 ... 175 °C
• Typical motor power 11 kW
Inverse - Diode
VRRM Tj = 25 °C 1200 V
Remarks
IF λpaste=0.8 W/(mK) Ts = 25 °C 44 A
• Case temp. limited to TC = 125°C max.
Tj = 175 °C Ts = 70 °C 35 A
(for baseplateless modules TC = TS)
• product rel. results valid for Tj ≤ 150 IF λpaste=2.5 W/(mK) Ts = 25 °C 49 A
(recomm. Top = -40 … +150°C) Tj = 175 °C Ts = 70 °C 40 A
IFRM 105 A
IFSM tp = 10 ms, sin 180°, Tj = 150 °C 170 A
Tj -40 ... 175 °C
Freewheeling - Diode
VRRM Tj = 25 °C 1200 V
IF λpaste=0.8 W/(mK) Ts = 25 °C 44 A
Tj = 175 °C Ts = 70 °C 35 A
IF λpaste=2.5 W/(mK) Ts = 25 °C 49 A
Tj = 175 °C Ts = 70 °C 40 A
IFRM 105 A
IFSM tp = 10 ms, sin 180°, Tj = 150 °C 170 A
Tj -40 ... 175 °C

NAB

© by SEMIKRON Rev. 7.0 – 07.02.2022 1

SKiiP 24NAB12T4V1
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
VRRM Tj = 25 °C 1600 V
IF λpaste=0.8 W/(mK) Ts = 25 °C 52 A
Tj = 150 °C Ts = 70 °C 39 A
IF λpaste=2.5 W/(mK) Ts = 25 °C 57 A
Tj = 150 °C Ts = 70 °C 43 A
IFSM tp = 10 ms Tj = 25 °C 370 A
MiniSKiiP® 2 sin 180° Tj = 150 °C 270 A
i2t tp = 10 ms Tj = 25 °C 685 A2s
sin 180° Tj = 150 °C 365 A2s
Converter-Inverter-Brake Tj -40 ... 150 °C
(CIB) Module
It(RMS) Tterminal = 80 °C, 20 A per spring 40 A
Tstg module without TIM -40 ... 125 °C
SKiiP 24NAB12T4V1
Visol AC sinus 50 Hz, 1 min 2500 V

Features* Characteristics
• Trench 4 IGBTs Symbol Conditions min. typ. max. Unit
• Robust and soft switching freewheeling Inverter - IGBT
diodes in CAL technology
VCE(sat) IC = 35 A Tj = 25 °C 1.85 2.10 V
• Highly reliable spring contacts for
VGE = 15 V
electrical connections Tj = 150 °C 2.25 2.45 V
chiplevel
• UL recognized: File no. E63532
VCE0 Tj = 25 °C 0.80 0.90 V
chiplevel
Typical Applications Tj = 150 °C 0.70 0.80 V
• Inverter up to 22 kVA rCE VGE = 15 V Tj = 25 °C 30 34 mΩ
• Typical motor power 11 kW chiplevel Tj = 150 °C 44 47 mΩ
VGE(th) VGE = VCE, IC = 1 mA 5 5.8 6.5 V
Remarks ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C 1 mA
• Case temp. limited to TC = 125°C max. Cies f = 1 MHz 1.95 nF
(for baseplateless modules TC = TS) VCE = 25 V
Coes f = 1 MHz 0.16 nF
• product rel. results valid for Tj ≤ 150 VGE = 0 V
(recomm. Top = -40 … +150°C) Cres f = 1 MHz 0.12 nF
QG VGE = - 8 V...+ 15 V 200 nC
RGint Tj = 25 °C 0 Ω
td(on) VCC = 600 V Tj = 150 °C 30 ns
tr IC = 35 A Tj = 150 °C 35 ns
RG on = 18 Ω
Eon Tj = 150 °C 4.3 mJ
RG off = 18 Ω
td(off) di/dton = 830 A/µs Tj = 150 °C 300 ns
tf di/dtoff = 600 A/µs Tj = 150 °C 55 ns

Eoff VGE = +15/-15 V Tj = 150 °C 3.25 mJ

Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1 K/W

Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.82 K/W

NAB

2 Rev. 7.0 – 07.02.2022 © by SEMIKRON

SKiiP 24NAB12T4V1
Characteristics
Symbol Conditions min. typ. max. Unit
Chopper - IGBT
VCE(sat) IC = 35 A Tj = 25 °C 1.85 2.10 V
VGE = 15 V
chiplevel Tj = 150 °C 2.25 2.45 V
VCE0 Tj = 25 °C 0.80 0.90 V
chiplevel
Tj = 150 °C 0.70 0.80 V
rCE VGE = 15 V Tj = 25 °C 30 34 mΩ
chiplevel Tj = 150 °C 44 47 mΩ
MiniSKiiP® 2 VGE(th) VGE = VCE, IC = 1 mA 5 5.8 6.5 V
ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C 1 mA
Converter-Inverter-Brake Cies
VCE = 25 V
f = 1 MHz 1.95 nF
Coes f = 1 MHz 0.16 nF
(CIB) VGE = 0 V
Cres f = 1 MHz 0.12 nF
QG VGE = - 8 V...+ 15 V 200 nC
SKiiP 24NAB12T4V1 RGint Tj = 25 °C 0 Ω
td(on) VCC = 600 V Tj = 150 °C 30 ns
tr IC = 35 A Tj = 150 °C 35 ns
Features* RG on = 18 Ω
Eon Tj = 150 °C 4.3 mJ
RG off = 18 Ω
• Trench 4 IGBTs td(off) Tj = 150 °C 300 ns
• Robust and soft switching freewheeling
tf Tj = 150 °C 55 ns
diodes in CAL technology
• Highly reliable spring contacts for VGE = +15/-15 V
Eoff Tj = 150 °C 3.25 mJ
electrical connections
• UL recognized: File no. E63532
Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1 K/W
Typical Applications Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.82 K/W
• Inverter up to 22 kVA Inverse - Diode
• Typical motor power 11 kW
VF = VEC IF = 35 A Tj = 25 °C 2.30 2.62 V
VGE = 0 V
chiplevel Tj = 150 °C 2.29 2.62 V
Remarks
VF0 Tj = 25 °C 1.30 1.50 V
• Case temp. limited to TC = 125°C max. chiplevel
(for baseplateless modules TC = TS) Tj = 150 °C 0.90 1.10 V
• product rel. results valid for Tj ≤ 150 rF Tj = 25 °C 29 32 mΩ
(recomm. Top = -40 … +150°C) chiplevel
Tj = 150 °C 40 43 mΩ
IRRM IF = 35 A Tj = 150 °C 34 A
Qrr di/dtoff = 1250 A/µs T = 150 °C 5.6 µC
j
VGE = -15 V
Err VCC = 600 V Tj = 150 °C 2.4 mJ
Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.2 K/W
Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1 K/W
Freewheeling - Diode
VF = VEC IF = 35 A Tj = 25 °C 2.30 2.62 V
VGE = 0 V
chiplevel Tj = 150 °C 2.29 2.62 V
VF0 Tj = 25 °C 1.30 1.50 V
chiplevel
Tj = 150 °C 0.90 1.10 V
rF Tj = 25 °C 29 32 mΩ
chiplevel
Tj = 150 °C 40 43 mΩ
IRRM IF = 35 A Tj = 150 °C 34 A
Qrr di/dtoff = 1250 A/µs T = 150 °C 5.6 µC
j
VGE = -15 V
Err VCC = 600 V T j = 150 °C 2.4 mJ
Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.2 K/W
Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1 K/W

NAB

© by SEMIKRON Rev. 7.0 – 07.02.2022 3

SKiiP 24NAB12T4V1
Characteristics
Symbol Conditions min. typ. max. Unit
Rectifier - Diode
VF = VEC IF = 13 A Tj = 25 °C 1.00 1.21 V
chiplevel Tj = 125 °C 0.90 1.10 V
VF0 Tj = 25 °C 0.88 0.98 V
chiplevel
Tj = 125 °C 0.73 0.83 V
rF Tj = 25 °C 9.2 18 mΩ
chiplevel
Tj = 125 °C 13 21 mΩ
MiniSKiiP® 2 IR Tj = 145 °C, VRRM 1.1 mA
Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.25 K/W
Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.1 K/W
Converter-Inverter-Brake Module
(CIB) Ms to heat sink 2 2.5 Nm
w 55 g
LCE - nH
SKiiP 24NAB12T4V1
Temperature Sensor
1670 ±
R100 Tr=100°C (R25=1000Ω) Ω
Features* 3%
• Trench 4 IGBTs R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2]
• Robust and soft switching freewheeling R(T) , A = 7.635*10-3°C-1,
diodes in CAL technology B = 1.731*10-5°C-2
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532

Typical Applications
• Inverter up to 22 kVA
• Typical motor power 11 kW

Remarks
• Case temp. limited to TC = 125°C max.
(for baseplateless modules TC = TS)
• product rel. results valid for Tj ≤ 150
(recomm. Top = -40 … +150°C)

NAB

4 Rev. 7.0 – 07.02.2022 © by SEMIKRON

SKiiP 24NAB12T4V1

Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature Ic = f(Ts)

Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)

Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

© by SEMIKRON Rev. 7.0 – 07.02.2022 5

SKiiP 24NAB12T4V1

Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG

Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward characteristic

Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic

6 Rev. 7.0 – 07.02.2022 © by SEMIKRON

SKiiP 24NAB12T4V1

Pinout and Dimensions

Pinout

© by SEMIKRON Rev. 7.0 – 07.02.2022 7

SKiiP 24NAB12T4V1
This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340.

*IMPORTANT INFORMATION AND WARNINGS

The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
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compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
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intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.

8 Rev. 7.0 – 07.02.2022 © by SEMIKRON