Battery Protect Solution IC

Document No. : IAP-LP06AB-00-02

APPROVAL SHEET
Product Battery Protect Solution IC
LP06AB
Product code
(LP06AB-00)
SDI Code 1203-007655
Product Form LTEP-8L, BD3.9x1.8
Date of Registration Aug. 21. 2017

ITM Semiconductor Co., LTD

82-7, Gwahaksaneop 1-ro, Oksan-myeon, Cheongwon-
gun, Chungcheongbuk-do, Korea 363-911
TEL +82 - 43 - 270 - 4801
FAX +82 - 43 - 270 - 4999
HOME http://www.it-m.co.kr

ITM Semiconductor Co., LTD

Battery Protect Solution IC LP06AB
Revision History (LP06AB)

Rev. Date Contents Written

■ Data Sheet 개정 이력
00 2017. 06. 16 # 신규제정 Ji-seon, Baek
# RSS(ON), IDET3, IDET4
01 2017. 06. 29 Ji-seon, Baek
VDD=4.4V, 2.6V SPEC 추가
02 2017. 07. 05 # Vdet3, Vdet4 , Idet3, Idet4 SPEC 수정 Ji-seon, Baek
■ Approval Sheet 개정 이력
00 2017. 08. 21 # 신규제정 Hyun-mok, Jo
01 2017. 08. 30 # INERGY社 FET 자료 추가 Ji-seon, Baek
# Reliability Report & ESD Report & Raw Data 자
02 2017. 09. 08 Ji-seon, Baek
료 추가

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Contents
1. Features Page 1

2. Outline Page 2

3. Pin Assignment Page 3

4. Block Diagram Page 3

5. Absolute Maximum Rating Page 4

6. Electrical Characteristics Page 4

7. Measuring Circuit Page 7

8. Operation Page 8

1) Overcharge detector (VD1) Page 8

2) Overdischarge detector (VD2) Page 8

3) Discharge overcurrent detector, Short detector

Page 9
(VD3, Short Detector)

4) Charge overcurrent detector Page 9

9. Application Circuit Page 10

10. Timing Chart Page 11

11. Packing SPEC Page 13

12. Package Description Page 16

13. Recommend Land Pattern Page 16

14. Marking Contents Page 17

15. Internal Structure & Vendor Location Page 18

16. Function Raw Data Page 19

17. Product Appearance / De-cap / X-ray Page 20

18. Reliability Report & ESD Report & Raw Data Page 22

19. Shipment Inspection Standards & Certificate Page 46

20. Manufacturing Process Page 49

21. Letter of Warranty and Representation Page 55

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Features
1. The protection IC and The Dual-Nch MOSFET to use common Drain are integrated into
One-packaging IC.
2. Reduced Pin-Count by fully connecting internally.
3. Application Part
1) Protection IC
① Uses high withstand voltage CMOS process.
- The charger section can be connected up to absolute maximum rating 28V.
② Detection voltage precision
- Overcharge detection voltage
+15, -10㎷ (Ta=25℃), +40, -35㎷ (Ta=-30~76℃)
- Overdischarge detection voltage
±100㎷ (Ta=25℃), ±110㎷ (Ta=-30~76℃)
- Discharging overcurrent detection voltage
±7㎷ (Ta=25℃), ±17㎷ (Ta=-30~76℃)
- Charging overcurrent detection voltage
±7㎷ (Ta=25℃), ±17㎷ (Ta=-30~76℃)
③ Built-in detection delay times
- Overcharge detection delay time
1.00±0.20s (Ta=25℃), 1.00[+0.50, -0.40]s (Ta=-30~76℃)
- Overdischarge detection delay time
96.0±19.2㎳ (Ta=25℃), 96.0[+48.0,－38.4]㎳ (Ta=-30~76℃)
- Discharging overcurrent detection delay time
12.0±3.6㎳ (Ta=25℃), 12.0[+6.0, -4.8 ]㎳ (Ta=-30~76℃)
- Charging overcurrent detection delay time
8.0±2.4㎳ (Ta=25℃), 8.0[+4.0, -3.2]㎳ (Ta=-30~76℃)
- Short detection delay time
500[+260, -270]㎲ (Ta=25℃), 500[+500,－320]㎲ (Ta=-30~76℃)
④ 0V charge function is allowed
⑤ Auto Wake-up function is allowed

2) FET
① Using advanced trench technology to provide excellent RDS(ON), low gate charge
and operation with Gate voltage as low as 2.5V while retaining a 12V VGS(MAX).
② The protection for ESD
③ Common drain configuration
④ General characteristics
- VDS (V) = 20V
- ID (A) = 10A
- RSS(ON) < 8mΩ (VGS = 3.9V, ID = 1A)
- ESD Rating : 2000V HBM

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Outline
This is a battery protect solution IC which is integrated with built-in the protection IC to use

a lithium ion/lithium polymer secondary batteries developed for 1-cell series and Dual-Nch

MOSFET. It functions to protect the battery by detecting overcharge, overdischarge, discharge

overcurrent, charge overcurrent and other abnormalities as turning off internal Nch MOSFET.

The protection IC is composed of four voltage detectors, short detection circuit, reference

voltage sources, oscillator, counter circuit and logical circuits.

The COUT pin (charge FET control pin) and DOUT pin (discharge FET control pin) outputs are

CMOS output, and can drive the internal Nch MOSFET directly. The COUT output becomes low

level after delay time fixed in the IC if overcharge is detected. The DOUT output becomes low

level after delay time fixed in the IC if overdischarge, discharge overcurrent or short is detected.

On overcharge state, if the VDD voltage is less than the overcharge release voltage, the

COUT output becomes high level after delay time fixed in the IC. On overdischarge state, if the

voltage of the battery rises more than the overdischarge detection voltage with connecting the

charger, the DOUT output becomes high level after delay time fixed in the IC. Charging current

can be supplied to the battery discharged up to 0V.

Once discharge overcurrent or short have been detected, if the state of discharge

overcurrent or short is released by opening the loads, the DOUT output becomes high level after

delay time fixed in the IC. On overdischarge state, the supply current is reduced as less as

possible. Once charge overcurrent has been detected, the state of charge overcurrent is

released by opening the charger and setting the load.

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Pin Assignment
[Package : LTEP-8L]
1 V-
1 8
2 7 2 Source 2
3 6
4 5 3 Source 2

[Top View] 4 Non Connecting

5 VDD
4 5
3 6 6 Source 1
2 7
1 8 7 Source 1

[Bottom View]
8 Non Connecting
Block Diagram

Protection IC

Oscillator Counter

Logic
VDD VD1
Circuit Level Shift
Charger
Overcharge
Detection Delay Short
VD4
Logic
VD2 Circuit Charger

Overdischarge VD3 V－
Discharge
Overcurrent

VSS DOUT COUT

Gate1 Gate2
Common Drain
Dual-Nch MOSFET

Source1 Source2

Drain

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Absolute Maximum Rating
Item Symbol Rating Unit
Supply Voltage VDD -0.3 ~ 12.0 V
V- Terminal Input Voltage V- VDD-28 ~ VDD+0.3 V
COUT Terminal Output Voltage VCOUT VDD-28 ~ VDD+0.3 V
DOUT Terminal Output Voltage VDOUT VSS-0.3 ~ VDD+0.3 V
Operation Temperature TOPR -40 ~ +85 ℃
Storage Temperature TSTG -55 ~ +125 ℃
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V

Electrical Characteristics
Item Symbol Measure Condition Min. Typ. Max. Unit *1
Input Voltage
Operating Input Voltage VDD1 VDD-VSS 1.5 - 10 V A
Minimum Operating VST = VDD-V-, VDD-VSS=0V 1.2 - -
VST V A
Voltage for 0V Charging ICHG=10mA VST = Charger Voltage
Channel ON Voltage
COUT Pin Nch ON Voltage VOL1 IOL=30㎂, VDD=4.5V - 0.1 0.5 V -
COUT Pin Pch ON Voltage VCH1 IOH=-30㎂, VDD=3.9V 3.4 3.8 - V -
DOUT Pin Nch ON Voltage VOL2 IOL=30㎂, VDD=2.0V - 0.1 0.5 V -
DOUT Pin Pch ON Voltage VCH2 IOL=-30㎂, VDD=3.9V 3.4 3.8 - V -
Current Consumption
Current Consumption IDD VDD=3.9V, V-=0V - - 6.0 ㎂ L
Current Consumption
IS VDD=2.0V - - 0.5 ㎂ L
at Stand-By
Over Charge Voltage Protection

Overcharge Detection TOPR = 25°C 4.415 4.425 4.440

VDET1 R1 = 1.0kΩ V B
Voltage TOPR = -30~76°C 4.390 4.425 4.465

Overcharge Detection TOPR = 25°C 0.8 1.0 1.2

tVDET1 VDD=3.6V→4.6V s B
Delay Time TOPR = -30~76°C 0.6 1.0 1.5

Overcharge Release TOPR = 25°C 4.175 4.225 4.275

VREL1 R1 = 1.0kΩ V B
Voltage TOPR = -30~76°C 4.155 4.225 4.295

Overcharge Release TOPR = 25°C 12.8 16.0 19.2

tVREL1 VDD=4.6V→3.6V ms B
Delay Time TOPR = -30~76°C 9.6 16.0 24.0

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Item Symbol Measure Condition Min. Typ. Max. Unit *1
Over Discharge Voltage Protection

Overdischarge Detection V-=0V TOPR = 25°C 2.400 2.500 2.600

VDET2 V D
Voltage R1 = 1.0kΩ TOPR = -30~76°C 2.390 2.500 2.610

Overdischarge Detection TOPR = 25°C 76.8 96.0 115.2

tVDET2 VDD=3.6V→2.2V ms D
Delay Time TOPR = -30~76°C 57.6 96.0 144.0

Overdischarge Release TOPR = 25°C 2.810 2.900 2.990

VREL2 R1 = 1.0kΩ V D
Voltage TOPR = -30~76°C 2.800 2.900 3.000

Overdischarge Release VCHG = 4.2V TOPR = 25°C 2.420 2.520 2.620

VREL2’ V D
Voltage 2 R1 = 1.0kΩ TOPR = -30~76°C 2.410 2.520 2.630

Overdischarge Release TOPR = 25°C 2.8 4.0 5.2

tVREL2 VDD=2.2V→3.6V ms E
Delay Time TOPR = -30~76°C 2.4 4.0 6.0

Discharge Overcurrent Protection

Discharging Overcurrent VDD=3.6V TOPR = 25°C 0.038 0.045 0.052

VDET3 V F
Detection Voltage R2 = 2.7kΩ TOPR = -30~76°C 0.028 0.045 0.062
Discharging Overcurrent
IDET3 # Reference : 1) Discharge / Charge Overcurrent Characteristics -
Detection Current

Discharging Overcurrent VDD=3.6V TOPR = 25°C 9.0 12.0 15.0

tVDET3 ms F
Detection Delay Time V-=0V→0.1V TOPR = -30~76°C 7.2 12.0 18.0

Discharging Overcurrent VDD=3.6V TOPR = 25°C 2.8 4.0 5.2

tVREL3 ms F
Release Delay Time V-=3.0V→0V TOPR = -30~76°C 2.4 4.0 6.0

Charge Overcurrent Protection

Charging Overcurrent VDD=3.6V TOPR = 25°C -0.055 -0.048 -0.041

VDET4 V G
Detection Voltage R2 = 2.7kΩ TOPR = -30~76°C -0.065 -0.048 -0.031
Charging Overcurrent
IDET4 # Reference : 1) Discharge / Charge Overcurrent Characteristics -
Detection Current

Charging Overcurrent VDD=3.6V TOPR = 25°C 5.6 8.0 10.4

tVDET4 ms G
Detection Delay Time V-=0V→-1V TOPR = -30~76°C 4.8 8.0 12.0

Charging Overcurrent VDD=3.6V TOPR = 25°C 2.8 4.0 5.2

tVREL4 ms G
Release Delay Time V-=-1V→0V TOPR = -30~76°C 2.4 4.0 6.0

Short Protection

TOPR = 25°C 0.25 0.35 0.45

Short Detection Voltage VSHORT VDD=3.6V V F
TOPR = -30~76°C 0.15 0.35 0.55

TOPR = 25°C 230 500 760

Short Detection VDD=3.6V
tSHORT ㎲ F
Delay Time V-=0V→3.0V TOPR = -30~76°C 180 500 1000

Rev.02 [2017. 09. 08]

 Battery Protect Solution IC LP06AB
Item Symbol Measure Condition Min. Typ. Max. Unit *1
Integrated MOSFET
Drain-Source
BVDSS ID=250㎂, VGS=0V 20 - - V
Breakdown Voltage
Zero Gate Voltage VDS=16V, VGS=0V - - 1
IDSS ㎂
Drain Current TJ=55℃ - - 5
Gate-Body
IGSS VDS=0V, VGS=±10V - - 10 ㎂
Leakage Current
Gate-Source
BVGSO VDS=0V, IG=±250㎂ ±12 - - V
Breakdown Voltage
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250㎂ 0.6 1.0 1.5 V
VGS=4.4V, ID=1A 3.0 5.0 7.5 mΩ
VGS=4.2V, ID=1A 3.2 5.2 7.7 mΩ
VGS=3.9V, ID=1A 3.5 5.5 8.0 mΩ
Static Source-Source VGS=3.7V, ID=1A 3.7 5.7 8.2 mΩ
RSS(ON)
On-Resistance VGS=3.5V, ID=1A 4.0 6.0 8.5 mΩ
VGS=3.3V, ID=1A 4.4 6.4 8.9 mΩ
VGS=3.0V, ID=1A 5.0 7.0 9.5 mΩ
VGS=2.6V, ID=1A 5.8 7.8 10.3 mΩ
Diode Forward Voltage VSD IG=1A, VGS=0V 0.50 0.69 0.90 V
Maximum Body-Diode
IS - - 4.5 A
Continuous Current

Note : *1 The test circuit symbols.

*2 The parameter is guaranteed by design.

Item Symbol Measure Condition Min. Typ. Max. Unit *1

IDET3(1) VDD=4.4V 7.0 9.0 11.5 A
IDET3(2) VDD=4.2V 6.7 8.7 11.2 A
IDET3(3) VDD=3.9V 6.2 8.2 10.7 A

Discharging Overcurrent IDET3(4) VDD=3.7V 5.9 7.9 10.4 A

Detection Current IDET3(5) VDD=3.5V 5.5 7.5 10.0 A
IDET3(6) VDD=3.3V 5.0 7.0 9.5 A
IDET3(7) VDD=3.0V 4.4 6.4 8.9 A
IDET3(8) VDD=2.6V 3.8 5.8 8.3 A
IDET4(1) VDD=4.4V 5.8 9.1 15.8 A
IDET4(2) VDD=4.2V 5.6 8.7 14.9 A
IDET4(3) VDD=3.9V 5.4 8.2 13.8 A

Charging Overcurrent IDET4(4) VDD=3.7V 5.3 7.9 13.1 A

Detection Current IDET4(5) VDD=3.5V 5.1 7.5 12.3 A
IDET4(6) VDD=3.3V 4.8 7.0 11.3 A
IDET4(7) VDD=3.0V 4.5 6.4 10.0 A
IDET4(8) VDD=2.6V 4.1 5.7 8.8 A

Note : The parameter is guaranteed by design, not tested in production

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Measuring Circuit

A. E.

VDD TP or Nc VDD TP or Nc
V
V V－ Nc V－ Nc
Source1 (VSS) Source2 Source1 (VSS) Source2

V V

B. F.

VDD TP or Nc VDD TP or Nc
V V－ Nc A V－ Nc
V
Source1 (VSS) Source2 Source1 (VSS) Source2

V V
C. G.

VDD TP or Nc VDD TP or Nc
V－ Nc V－ Nc
V
Source1 (VSS) Source2 Source1 (VSS) Source2

V V
D. H.

VDD TP or Nc VDD TP or Nc
A
V V－ Nc V－ Nc
Source1 (VSS) Source2 Source1 (VSS) Source2

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Operation
1. Overcharge detector (VD1)
The VD1 monitors VDD pin voltage during charge. In the state of charging the battery, it
will detect the overcharge state of the battery if the VDD terminal voltage becomes higher
than the overcharge detection voltage(Typ. 4.425V). And then the COUT terminal turns to low
level, so the internal charging control Nch MOSFET turns OFF and it forbids to charge the
battery.
After detecting overcharge, it will release the overcharge state if the V DD terminal voltage
becomes lower than the overcharge release voltage. And then the COUT terminal turns to high
level, so the internal charging control Nch MOSFET turns ON, and it accepts
to charge the battery.
When the VDD terminal voltage is higher than the overcharge detection voltage, to disconnect
the charger and connect the load, leave the COUT terminal low level, but it accepts to conduct
load current via the paracitical body diode of the internal Nch MOSFET. And then if the
VDD terminal voltage becomes lower than the overcharge detection voltage, the COUT terminal
turns to high level, so the internal Nch MOSFET turn ON, and it accepts to charge the battery.
The overcharge detection and release have delay time decided internally. When the V DD
terminal voltage becomes higher than the overcharge detection voltage, if the VDD terminal
voltage becomes lower than the overcharge detection voltage again within the overcharge
detection delay time(Typ. 1.00s), it will not detect overcharge. And in the state of overcharge,
when the VDD terminal voltage becomes lower than the overcharge release voltage, if the
VDD terminal voltage backs higher than the overcharge release voltage again within the
overcharge release delay time(Typ. 16.0ms), it will not release overcharge.
The output driver stage of the COUT terminal includes a level shifter, so it will output the
V- terminal voltage as low level. The output type of the COUT terminal is CMOS output
between VDD and V- terminal voltage.

2. Overdischarge detector (VD2)

The VD2 monitors VDD pin voltage during discharge. In the state of discharging the battery,
it will detect the overdischarge state of the battery if the VDD terminal becomes lower than
the overdischarge detection voltage (Typ. 2.500V). And then the DOUT terminal turns to low
level, so the internal discharging control Nch MOSFET turn OFF and it forbids to discharge
the battery.
Once overdischarge has been detected, overdischarge is released and the DOUT output
becomes high level, if the voltage of the battery rises more than the overdischarge
detection voltage with connecting the charger, or more than the overdischarge release
voltage without connecting the charger. Charging current is supplied through a parasitic
diode of Nch MOS FET when the VDD terminal voltage is below the overdischarge detection
voltage to the connection of the charger, and the DOUT terminal enters the state which can
be discharged by becoming high level,and turning on Nch MOS FET when the VDD terminal
voltage rises more than the overdischarge detection voltage.
When the battery voltage is about 0V, if the charger voltage is higher than the minimum
operating voltage for 0V charging (Min. 1.2V), the COUT terminal outputs high level and it
accepts to conduct charging current.
The overdischarge detection have delay time decided internally. When the VDD terminal
voltage becomes lower than the overdischarge detection voltage, if the VDD terminal voltage
becomes higher than the overdischarge detection voltage again within the overdischarge
detection delay time (Typ. 96.0ms), it will not detect overdischarge. Moreover, the overdischarge
release delay time (Typ. 4.0ms) exists, too.
All the circuits are stopped, and after the overdischarge is detected, it is assumed the
state of the standby, and decreases the current (standby current) which IC consumes as
much as possible. (When VDD=2V, Max. 0.5uA).
The output type of the DOUT terminal is CMOS output between VDD and VSS terminal voltage.

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
3. Discharge overcurrent detector, Short detector (VD3, Short Detector)
In the state of chargable and dischargabe, VD3 monitors the voltage level of V- pin. If
the V- terminal voltage becomes higher than the discharging overcurrent detection voltage
(Typ. 0.045V) by short of loads, etc., it will detect discharging overcurrent state. If the V -
terminal voltage becomes higher then short detection voltage (Typ. 0.35V), it will detect
discharging overcurrent state, too. And then the DOUT terminal outputs low level, so the internal
discharging control Nch MOSFET turns OFF, and it protects from large current discharging.
The discharging overcurrent detection has delay time decided internally. When the V - terminal
voltage becomes higher than the discharging overcurrent detection voltage, if the V - terminal
voltage becomes lower than the discharging overcurrent detection voltage within the discharging
overcurrent detection delay time (Typ. 12.0ms), it will not detect discharging overcurrent.
Morever, the discharging overcurrent release delay time (Typ.4.0ms) exists, too.
The short detection delay time (Typ. 500us) decided internally exists, too.
The discharging overcurrent release resistance is built into between V- terminal and VSS
terminal. In the state of discharging overcurrent or short, if the load is opened, V- terminal is
pulled down to the VSS via the discharging overcurrent release resistance.
And when the V- terminal voltage becomes lower than the discharging overcurrent detection
voltage, it will automatically release discahrging overcurrent or short state. if discharging
overcurrent or short is detected, the discharging overcurrent release resistance turns ON.
On the normal state (chargable and dischargable state), the discharging overcurrent release
resistance is OFF.

4. Charge overcurrent detector (VD4)

In the state of chargable and dischargable, VD4 monitors the voltage level of V- pin. If the V-
terminal voltage becomes lower than charging overcurrent detection voltage (Typ. -0.048V)
by abnormal voltage or current charger, etc., it will detect charging overcurrent state. And
then the COUT terminal outputs low level, so the internal charging control Nch MOSFET turn
OFF, and it protects from large current charging.
It release charging overcurrent state if the abnormal charger is disconnected and the
load is connected.
The charging overcurrent detection has delay time decided internally. When the V -
terminal voltage becomes lower than the charging overcurrent detection voltage, if the V -
terminal voltage becomes higher than the charging overcurrent detection voltage within the
charging overcurrent detection delay time (Typ. 8.0ms), it will not detect charging overcurrent.
Morever, the charging overcurrent release delay time (Typ. 4.0ms) exists, too.

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Application Circuit (Example)
＋ P+

R1
1.0㏀
Protection IC
TP
Oscillator Counter
VDD
VD1 Logic
Circuit Level Shift
Charger
Overcharge
Detection Delay Short
VD4 C2
Logic
VD2 Circuit Charger V－ 0.1㎌
Overdischarge VD3

Discharge
Overcurrent
C1
0.1㎌
VSS DOUT COUT

R2
Common Drain 2.7㏀
Gate1 Gate2
Dual-Nch MOSFET

Source1 Source2
－ P-

Drain

C3
0.1㎌

※ Application Hint

R1 and C1 stabilize a supply voltage ripple. However, the detection voltage rises by the
current of penetration in IC of the voltage detection when R1 is enlarged, so the value of
R1 is adjusted to 1kohm or less. Moreover, adjust the value of C1 to 0.01uF or more to
do the stability operation, please.
R1 and R2 resistors are current limit resistance if a charger is connected reversibly or a
high voltage charger that exceeds the absolute maximum rating is connected. R1 and R2
may cause a power consumption will be over rating of power dissipation, therefore the
`R1+R2` should be more than 1kohm. Moreover, if R2 is too enlarged, the charger
connection release cannot be occasionally done after the overdischarge is detected, so
adjust the value of R2 to 10kohm or less, please.
C2 and C3 capacitors have effect that the system stability about voltage ripple or
imported noise. After check characteristics, decide that these capacitors should be inserted
or not, where should be inserted, and capacitance value, please.

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Timing Chart
1. Overcharge, Charging overcurrent operations

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

2. Overdischarge, Discharging Overcurrent and Short operations

VSS

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Packing Spec
▷ Carrier tape spec

▷ Reel spec

▷ Taping spec

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
▷ OUTER BOX PACKING SPECIFICATION

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
▷ 취급 주의 사항

1. Peak package body temperature: 300℃ at ≤ 10 seconds

2. Maximum reflow passes : Only 2 times

After bag is opened, devices that will be subjected to reflow solder

3.
or other high temperature process must be :

a. Mounted within: 24 hours of factory conditions <30°C/60% RH.

b. Stored on a dry atmosphere cabinet or placed in a room at ≤23±5℃ and <60% RH

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Package Description
5° TYP.
3.900±0.1 7° MAX.
1.800±0.1

TOP VIEW (0.650 MAX.)

SIDE VIEW
0.600 TYP.

5° TYP.
7° MAX.

FRONT VIEW
ALL LEAD PITCH

ALL LEAD
0.200

2-0.600 MIN.
0.400

4-0.250 MIN. NOTE

1. LEAD BURR : VERTICAL : MAX 0.075
HORIZONTAL : MAX 0.080
2. PACKAGE WARPAGE & TWIST: MAX. 0.050
3. MOLD BURR & FLASH : PACKAGE OUT LINE BURR MAX 0.100
GATE BURR MAX 0.100
EXPOSED PAD FLASH(RESIN BLEED) MAX 0.100
4. PACKAGE CHIP OUT : PACKAGE OUTLINE BASE MAX 0.050
5. PACKAGE OUTLINE DIMENSION EXCLUDES MOLD BURR(FLASH) & GATE BURR
BTM VIEW 6. LEAD AND EXPOSED PAD PLATING : PURE TIN(Sn) 99wt%
THICKNESS > 5 ~ 15 um

Recommend Land Pattern (timeshare)

[1]

[2]

[mm]

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Marking Contents
Indicate 1’st Pin
Model No.

LP06AB
ABCDEF

Lot Code.

Manufacturing week
Manufacturing year

Assembly Location

가. Assembly Location (1자리) 나. Manufacturing Year (1자리) 다. Manufacturing Week (2자리)

A : Assembly Location Y : Manufacturing Year

A ITMK N Location11 0 2010 5 2015
B Location2 P Location12 1 2011 6 2016
C ITMV R Location13 2 2012 7 2017
D Location4 S Location14 3 2013 8 2018
E Location5 T Location15 4 2014 9 2019
F Location6 U Location16
G Location7 V Location17
H Location8 X Location18
K Location9 Y Location19
L Location10 Z Location20

라. Lot Code (2자리)

LT : Lot Code
Lot # Code Lot # Code
1'st Lot 00 100 Lot 3M
2'nd Lot 01 - -
3'rd Lot 02 200 Lot 6K
- - - -
11 Lot 10 400 Lot CF
12 Lot 11 - -
- - 600 Lot JB
21 Lot 1A - -
- - 900 Lot S5
45 Lot 1Z - -
46 Lot 21 1167 Lot ZZ ※ Lot Code에서 알파벳 26문자 중 'I'를 제외 한다.

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Internal Structure & Vendor Location
De-capsulation X-ray

MAGNACHIP

Chip
Appearance

INERGY

P-IC (1’st) MOSFET (1’st)

Chip Size Vendor Chip Size Vendor
MAGNACHIP
805 X 700 um MITSUMI 3300 X 1500 um
Wafer INERGY
Chip Thickness Location Chip Thickness Location
Cheongju, Korea
140 um Osaka, Japan 140 um
Hsinchu County, Taiwan
Bac Ninh Province,
Package Location
Vietnam

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Function Raw Data
LP06AB 기능검토 Data
Consumption Current MOSFET
Over Voltage Protection Under Voltage Protection Over Current Protection
FUNCTION
Idet3[A] Idet4[A] Rss(on)
Vdet1[V] tVDET1[ms] VREL1[V] Vdet2[V] tVDET2[ms] VREL2[V] tVDET3[ms] tVDET4[ms] Idd[uA] Is[uA]
(at VDD=3.9V) (at VDD=3.9V) (at Vgs=3.9V)
LSL 4.415 800 4.175 2.400 76.8 2.810 6.2 9.0 5.4 5.6 - - 3.5
SPEC
USL 4.440 1200 4.275 2.600 115.2 2.990 10.7 15.0 13.8 10.4 6 0.5 8.0
1 4.423 1019.7 4.217 2.501 93.5 2.901 7.944 11.8 9.648 7.9 2.197 0.327 5.4
2 4.420 1034.5 4.216 2.500 94.0 2.899 7.253 12.0 8.047 8.0 2.253 0.345 6.3
3 4.420 996.8 4.216 2.504 91.2 2.905 7.785 11.5 8.928 7.7 2.244 0.369 5.6
4 4.420 1002.5 4.217 2.506 91.7 2.910 8.584 11.6 9.150 7.8 2.223 0.343 5.3
5 4.424 1008.4 4.219 2.501 92.6 2.901 8.094 11.7 9.584 7.8 2.211 0.330 5.3
6 4.421 1005.4 4.217 2.507 92.0 2.909 8.545 11.7 8.836 7.9 2.277 0.346 5.5
7 4.423 1024.6 4.218 2.506 94.1 2.910 8.473 12.0 8.508 7.9 2.204 0.345 5.7
8 4.425 1032.5 4.218 2.513 94.1 2.915 8.314 12.0 9.388 8.0 2.290 0.366 5.4
9 4.423 965.9 4.218 2.512 88.4 2.915 8.207 11.3 9.415 7.5 2.313 0.360 5.3
10 4.421 1075.3 4.215 2.499 97.8 2.896 8.036 12.5 8.836 8.4 2.275 0.338 5.5
11 4.425 1035.0 4.221 2.504 94.7 2.903 7.258 12.0 9.086 8.0 2.254 0.340 5.8
12 4.421 982.6 4.216 2.508 90.5 2.909 8.788 11.5 9.365 7.6 2.212 0.327 5.2
13 4.426 1013.6 4.220 2.512 94.2 2.914 8.471 11.8 9.679 7.9 2.126 0.316 5.3
14 4.423 1004.7 4.218 2.507 92.3 2.910 8.418 11.7 9.454 7.8 2.183 0.322 5.5
15 4.421 1038.5 4.215 2.497 94.5 2.899 8.181 12.0 9.090 8.1 2.163 0.279 5.5
16 4.421 1021.1 4.216 2.499 93.4 2.899 7.943 11.9 9.679 7.9 2.187 0.346 5.3
17 4.423 999.0 4.218 2.497 91.6 2.900 7.862 11.6 8.500 7.8 2.228 0.332 5.8
18 4.424 1017.2 4.218 2.498 93.3 2.897 8.333 11.8 10.166 7.9 2.196 0.327 5.4
19 4.420 1027.7 4.216 2.497 93.2 2.893 8.440 11.9 10.400 8.0 2.227 0.334 5.0
20 4.420 980.2 4.217 2.506 89.8 2.910 8.800 11.4 8.727 7.6 2.288 0.342 5.5
21 4.421 1000.6 4.217 2.505 91.7 2.907 8.189 11.6 8.724 7.8 2.265 0.349 5.8
22 4.421 1048.5 4.215 2.500 95.3 2.899 8.981 12.2 9.415 8.1 2.273 0.349 5.3
23 4.422 1059.9 4.218 2.504 96.8 2.905 8.207 12.3 9.566 8.2 2.288 0.340 5.3
24 4.421 1032.0 4.217 2.501 94.4 2.901 7.982 12.0 8.844 8.0 2.261 0.347 5.8
25 4.421 1032.0 4.215 2.500 94.6 2.900 7.927 12.0 9.727 8.0 2.262 0.327 5.5
26 4.421 1049.0 4.217 2.499 95.8 2.895 7.771 12.2 9.245 8.1 2.248 0.336 5.7
27 4.422 1003.2 4.217 2.501 91.9 2.900 8.545 11.7 9.218 7.8 2.276 0.348 5.5
28 4.421 1064.5 4.215 2.499 96.7 2.900 8.849 12.3 9.547 8.2 2.240 0.355 5.3
29 4.421 1050.9 4.217 2.500 95.3 2.897 8.314 12.2 9.500 8.1 2.252 0.330 5.4
30 4.420 1010.6 4.215 2.502 93.7 2.905 7.909 11.8 9.327 7.9 2.229 0.342 5.5
31 4.424 1013.6 4.218 2.507 93.3 2.907 7.500 11.8 8.965 7.9 2.296 0.357 5.8
32 4.424 990.6 4.218 2.505 90.7 2.904 8.309 11.5 9.236 7.7 2.218 0.332 5.5
MIN 4.420 965.9 4.215 2.497 88.4 2.893 7.253 11.3 8.047 7.5 2.126 0.279 5.0
MAX 4.426 1075.3 4.221 2.513 97.8 2.915 8.981 12.5 10.400 8.4 2.313 0.369 6.3
AVG 4.422 1020.0 4.217 2.503 93.3 2.904 8.194 11.9 9.244 7.9 2.239 0.339 5.5
Cpk 1.48 2.43 8.88 10.5 2.71 6.4 1.72 3.58 2.7 4.09 38.76 3.99 2.56

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Product Appearance / De-cap / X-ray [MAGNACHIP]

# Appearance

[TOP] [BOTTOM]

# De-cap

# X-ray

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Product Appearance / De-cap / X-ray [INERGY]

# Appearance

[TOP] [BOTTOM]

# De-cap

# X-ray

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Reliability Report & ESD Report

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Shipment Inspection Standards & Certificate
관리본

LP06AB 출하검사 기준서

개정차수 (1) 작성 검토 승인 품질
표 비관리본
결
표준번호 ISQ-WU-003 준 제정일 2017. 06. 28
모델명 LP06AB 관 개정일 2017. 07. 28

(Jackpot向)
재
제품명 Protection One Chip 리 작성자 박현주
고객명 전고객사 /
07/28 /
07/28 /
07/31 / 승인자 김상철
판정기준 변경점 관리사항(4M 변경)
검사항목 검사 규격 검사방식 검사장비
(ACC/Rej) 변경일 적용일 변경내용 확인자
1. 과충전 차단 전압 (VDET1[v]) : 4.425, SPEC(4.415 ~ 4.440) 2017. 06. 28 2017. 06. 28 최초 제정 이소윤

2. 과충전 차단 지연시간 (tVDET1[ms]) : 100, SPEC(800 ~ 1200) 2017.07.28 2017.07.28 승인원 SPEC 변경(VDET3, IDET3, VDET4, IDET4) 박현주

3. 과방전 차단 전압 (VDET2[v]) : 2.500, SPEC(2.400 ~ 2.600)

4. 과방전 차단 지연시간 (tVDET2[ms]) : 96.0, SPEC(76.8 ~ 115.2)

5. 방전 과전류 차단 전압(VDET3[v]) : 0.045, SPEC(0.038 ~ 0.052) KS A ISO

2859-1
6. 방전 과전류 차단 전류(IDET3[A]) : 8.9, SPEC(5.9 ~ 10.4)
샘플링 검사
특성검사 7. 과전류 차단 지연시간 (tVDET3[ms]) : 12.0, (9.0 ~ 15.0) (AQL 지표형) 0,1 POC Tester
특별검사 -S2
8. 충전과전류 차단전압(VDET4[v]) : 0.048, SPEC(0.041 ~ 0.055)
AQL : 0.4
9. 충전과전류 차단전류(IDET4[A]) : 7.9, SPEC(5.3 ~ 13.1) (n=32)

10. 충전과전류 차단 지연시간(tVDET4[ms]) : 8.0, (5.6 ~ 10.4)

11. 정상 소비전류 (IDD[㎂]) : Max 6.0

12. 절전 소비전류 (IS[㎂]) : Max 0.5

13. 내부저항 Rss-on[mΩ] : 5.5 (3.5 ~ 8.0)

1. 부품 혼입이 없을 것.(모델, 인쇄, 패키지혼입) 중점관리 품질 이력사항(CTQ)

KS A ISO 2859-1
2. 마킹불량이 없을 것(무마킹, 인쇄흐림, 이중마킹, 정렬, 치수, 끊김등) 까다로운 검사 Ⅲ 발생일 발생처 주요내용 확인자
TOP 확대경
3. Reel테이핑 상태(역방향 삽입, 불연속 테이핑, 테이프 미실링, 손상등)가 양호할 것 AQL 0.010%
(n=2000)
4. 라벨 Bar Code 불량(내용물과 불일치, Bar code 끊김, 흠림)이 없을 것.

1. PKG 균열(Crack)이 없을 것

2. 불완전 성형이 기준 이내일 것 (Width×Length×Depth 0.10㎜×0.10㎜×0.05㎜)

3. Tie Bar부 깨짐이 기준이내 일 것 (Width×Length 0.2㎜×0.2㎜)

4. 패키지 어긋남이 기준(0.05㎜ )이내 일 것. 0,1

5. 기공, 기포, 다공이 기준(전체면적의 10%이내, 2개 이하)이내 일 것 KS A ISO 2859-1

외관검사 까다로운 검사 S2
Bottom 6. Lead, 방열판 짓눌림이 기준(0.05mm)이내 일 것. 현미경
AQL 0.25
7. Burr가 기준(패키지: 0.10mm, Lead: 0.05m)이내 일 것. (n=50)

8. 패키지 긁힘이 기준(L : 1.0mm , 폭 : 0.1mm이내)일 것. ◆ Marking 사양

9. Flash가 기준(A≥0.2mm ,B : 0.1mm) 이내일 것. - ITMV 양산적용으로 "C"마킹 적용

- Label색상 : 살구색
10. 도금불량이 없을 것

11. LEAD Cutting면 이물/부식이 없을 것.

1. Cover Tape가 Carrier Tape Hole(1/3)이상 침범하지 않을것.

C7XXYY
Check 검사
포장상태 2. 캐리어 테이프 파손 없을것. 0,1 확대경
(n=10,c=0)
3. Sealing 과접착으로 인한 Cover Tape 찢어짐 및 Carrier 짓눌림 없을것. ◆ 도면 사양

Check 검사
X-ray검사 1. Wire Short 없을것. 0,1 x-ray설비
(n=10,c=0)

1. 3.90±0.1 (3.80㎜ ~ 4.00㎜)

2. 1.80±0.10 (1.70㎜ ~ 1.90㎜) Check 검사 투영기

치수검사 0,1
(n=5) 버니어켈리퍼스
3. Max 0.65㎜

관련자료 유무: ◆ 승인원 ◇ 도면 ◇ 한도견본 ◇ 기타 ( )

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Customer Supplier
Drafter Decision Approval Drafter Approval Approval

Inspection Report 정회정 박현주 김정호

17/8/11 17/8/11 17/8/11

■ Model : LP06AB(Jackpot向) ■ Customer : 파워로직스

■ Inspection Date : 2017-08-11 ■ LOT Size : 1,500 EA

■ Inspection Method(AQL ISO2859-1) ■ LOT NO : C731GS

ITEM Inspection Method Inspection Q'ty Remark Result(Pass / Fail)

TOP : Ⅲ, 0.01 1,500 ea c=0

1 외관검사(Visual Inspection)
Bottom : S2, 0.25 50 ea c=0
2016.08.11
2 치수검사(Dimension Inspection) Check n=5 c=0

3 특성검사(Function ) S2, 0.4 32 ea c=0

SUPPLIER CUSTOMER

■ Inspection Data
1. 외관검사(Visual Inspection)

No. Inspection Item Result

출하검사 기준에 만족할 것. (제품 혼입, 마킹불량, 테이핑불량, 등 )

1 OK
[ OQC satisfy the inspection standard. (Production Mix,Marking bad,Taping bad)

2. 치수검사(Dimension Inspection)
No. Inspection Item SPEC(mm) 1 2 3 4 5 MIN MAX Avg Result

1 Point1 3.80 ~ 4.00 3.88 3.88 3.89 3.89 3.89 3.88 3.89 3.886 OK

2 Point2 1.70 ~ 1.90 1.82 1.80 1.82 1.80 1.80 1.80 1.82 1.81 OK

3 Point3 MAX 0.65 0.62 0.63 0.62 0.62 0.63 0.62 0.63 0.62 OK

3. 특성검사(Function Data)

Over Charge Over Discharge Discharge Overcurrent Charge Overcurrent Current

Voltage Protection Voltage Protection Protection Protection Consumption
ITEM RSSON

tVdet1 Vdet1 tVdet2 Vdet2 tVdet3 Vdet3 IDET3 tVdet4 Vdet4 IDET4 Idd Is

LSL 800.0 4.415 76.8 2.4 9.0 0.038 5.9 5.6 0.041 5.3 0.0 0.0 3.5
SPEC
USL 1200.0 4.440 115.2 2.6 15.0 0.052 10.4 10.4 0.055 13.1 6.0 0.5 8.0

Unit ms V ms V ms V A ms V A ㎂ ㎂ mΩ

Min 970.0 4.422 89.6 2.497 11.3 0.044 7.031 7.5 0.046 6.750 1.976 0.300 5.8

Max 1091.9 4.428 100.0 2.511 12.7 0.047 7.924 8.5 0.050 8.620 2.501 0.395 7.3

Stdev 27.8 0.001 2.4 0.003 0.3 0.001 0.324 0.2 0.001 0.518 0.149 0.025 0.4

Average 1039.7 4.426 95.3 2.504 12.1 0.045 7.527 8.1 0.048 7.610 2.170 0.349 6.3

Cpk 1.92 3.13 2.5 9.70 3.1 2.67 1.67 3.62 1.95 1.49 8.58 1.99 1.38

Result OK OK OK OK OK OK OK OK OK OK OK OK OK

■ LOT No. Summary ①

1. Lot No : Please check to Packing List.

③
②

ISQ-WM-002-001 ㈜아이티엠반도체 A4(297mm*210mm)

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Current
Over Charge Over Discharge Discharge Charge Consumption
ITEM Rsson
Voltage Protection Voltage Protection Overcurrent Protection Overcurrent Protection

tVdet1 Vdet1 tVdet2 Vdet2 tVdet3 Vdet3 IDET3 tVdet4 Vdet4 IDET4 Idd Is

LSL 800.0 4.415 76.8 2.400 9.0 0.038 5.9 5.6 0.041 5.3 - - 3.5
Spec
USL 1200.0 4.440 115.2 2.600 15.0 0.052 10.4 10.4 0.055 13.1 6.000 0.500 8.0

Unit ms V ms V ms V A ms V A ㎂ ㎂ mΩ

1 1065.9 4.426 97.3 2.503 12.4 0.045 7.338 8.3 0.049 6.845 2.151 0.330 7.1

2 1017.2 4.426 94.3 2.509 11.9 0.044 7.031 7.9 0.049 7.825 2.321 0.375 6.3

3 1049.2 4.426 96.1 2.505 12.2 0.045 7.727 8.1 0.049 8.237 2.266 0.355 5.9

4 1024.7 4.426 94.4 2.503 12.0 0.046 7.745 7.9 0.047 8.000 2.091 0.320 5.9

5 1061.1 4.423 96.5 2.503 12.3 0.046 7.879 8.2 0.048 8.258 2.321 0.355 5.8

6 1048.0 4.422 95.9 2.511 12.2 0.045 7.142 8.1 0.048 7.603 2.011 0.395 6.3

7 1041.9 4.426 95.2 2.500 12.1 0.045 7.031 8.1 0.048 7.484 2.501 0.365 6.4

8 1004.7 4.428 90.7 2.505 11.7 0.045 7.031 7.8 0.046 7.171 2.336 0.300 6.4

9 1015.1 4.426 92.7 2.503 11.8 0.046 7.723 7.9 0.049 7.043 2.056 0.340 6.9

10 1018.8 4.423 94.0 2.500 11.9 0.046 7.138 7.9 0.047 7.261 2.101 0.380 6.5

11 1059.0 4.426 97.0 2.502 12.3 0.046 7.879 8.2 0.049 8.500 2.166 0.330 5.8

12 1010.6 4.428 92.5 2.502 11.8 0.045 7.500 7.9 0.049 8.216 2.186 0.390 6.0

13 1070.2 4.426 98.3 2.506 12.5 0.044 7.737 8.3 0.050 8.620 2.051 0.355 5.8

14 1053.8 4.427 96.3 2.508 12.2 0.046 7.745 8.1 0.047 7.881 2.096 0.340 5.9

15 1069.5 4.426 97.7 2.509 12.4 0.044 7.508 8.3 0.048 8.118 2.431 0.370 5.9

16 1082.6 4.427 98.9 2.503 12.6 0.044 7.031 8.4 0.046 7.285 2.136 0.395 6.3

17 1082.0 4.427 98.9 2.503 12.6 0.044 7.514 8.4 0.046 6.750 2.266 0.355 6.8

18 1038.8 4.426 94.6 2.500 12.0 0.046 7.745 8.1 0.048 8.118 1.976 0.330 5.9

19 1006.1 4.426 92.8 2.500 11.7 0.046 7.924 7.8 0.049 7.363 2.371 0.350 6.6

20 970.0 4.426 89.6 2.503 11.3 0.046 7.733 7.5 0.049 8.216 2.016 0.340 6.0

21 1057.9 4.426 97.4 2.503 12.3 0.045 7.142 8.2 0.048 7.603 2.116 0.340 6.3

22 1062.9 4.426 97.5 2.503 12.4 0.047 7.833 8.2 0.047 7.866 2.391 0.305 6.0

23 1027.0 4.426 93.5 2.505 11.9 0.044 7.032 7.9 0.049 7.838 2.026 0.330 6.2

24 1028.1 4.426 94.6 2.503 12.0 0.045 7.818 8.0 0.047 7.151 2.251 0.360 6.6

25 1059.8 4.426 96.8 2.503 12.3 0.046 7.491 8.2 0.047 7.737 2.111 0.360 6.1

26 1033.9 4.426 94.2 2.497 12.0 0.045 7.717 8.0 0.049 7.358 2.101 0.335 6.7

27 1091.9 4.426 100.0 2.503 12.7 0.044 7.078 8.5 0.049 6.753 2.416 0.365 7.3

28 1035.4 4.426 94.6 2.511 12.0 0.047 7.580 8.0 0.047 7.500 1.991 0.325 6.2

29 1026.1 4.426 94.0 2.509 12.0 0.046 7.924 7.9 0.050 7.575 2.031 0.325 6.6

30 1047.2 4.426 96.4 2.505 12.2 0.044 7.411 8.1 0.047 6.838 2.081 0.330 6.8

31 1008.4 4.427 92.7 2.505 11.8 0.046 7.924 7.9 0.047 7.151 2.031 0.390 6.6

32 1003.5 4.426 92.8 2.508 11.7 0.045 7.818 7.8 0.049 7.363 2.036 0.325 6.6

Min 970.0 4.422 89.6 2.497 11.3 0.044 7.031 7.5 0.046 6.750 1.976 0.300 5.8

Max 1091.9 4.428 100.0 2.511 12.7 0.047 7.924 8.5 0.050 8.620 2.501 0.395 7.3

Stdev 27.846 0.001 2.439 0.003 0.314 0.001 0.324 0.215 0.001 0.518 0.149 0.025 0.403

Average 1039.728 4.426 95.256 2.504 12.100 0.045 7.527 8.059 0.048 7.610 2.170 0.349 6.328

Cpk 1.92 3.13 2.52 9.70 3.08 2.67 1.67 3.62 1.95 1.49 8.58 1.99 1.38

Result OK OK OK OK OK OK OK OK OK OK OK OK OK

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Manufacturing Process

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB

Rev.02 [2017. 09. 08]

Battery Protect Solution IC LP06AB
Letter of Warranty and Representation

Rev.02 [2017. 09. 08]