blue binder, tab 4 Philips Components Bunaee one BUK455-600B SS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a Blasic envelope, device is intended for use in Switched Mode Power Supplies {SMPS), meter corr, wecing IC/DC and AC/DC converters, ‘and in general purpose switching applications MECHANICAL DATA PowerMOS transistor QUICK REFERENCE DATA ‘SYMBOL ] PARAMETER MAX. | MAX. | UNIT BUK4sS | -600A | -600B Vos Drain-source votage 600 | 600 | v iy Drain current (DC) 45 | 49 A a Total power dissipation 100 | 100 | w Rosom | Drain-source on-state resistance] 20 | 25 a Dimensions in mm 45 Not Mass: 29 103. “+ E mel [la Pinning: dae at 1+Gate ¥ x 2= Drain 3 = Source 4 rovtoed [aL Bt d _ mae 13 | PHe> ommcan 2284 9 8 Fig.1 T0220AB; drain connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic discharge sensitive devices (ESDs) to prevent damage to MOS gale oxide. 2. Accessories supplied on request: refer to Mounting instructions for T0220 envelopes. January 1989 ey PHILIPSPowerMOS transistor BUK455-600A BUK455-600B a RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage = : 600 Vv \; Drain-gate voltage Res = 20k0 7 600 v Ves |Gate-source voltage : 30. v “600A | -6008 bo Drain current (DC) Tre = 25°C - 45 40 A lo Drain current (DC) Tre = 100°C : 28 25 A low Drain current (pulse peak value) |T,_= 25°C - 418 16 A Pa Total power dissipation Tro = 25°C - 100 w ee | Storage temperature - -55 150 ic a [Junction Temperature - : 150 ¢ ‘THERMAL RESISTANCES From junction to mounting base Rayne = 1.25 KW From junction to ambient Raye = 60 KW. STATIC CHARACTERISTICS Tre = 25°C unless otherwise specified SYMBOL [PARAMETER [CONDITIONS MIN, | TYP. | MAX. | UNIT ] Vanoss_[Drgn-source breakdown Vou = 0 V: lp = 025 70 ~ | Vv voltage Vesire |Gate threshold voltage Vos = Vag; Ip = 1 mA 4.0 ae loee"” | Zero gate voltage drain current {Vos = 660 V; Vos = 0 V; T, = 25°C 20 | pA loss Zero gate voltage drain current | Vos = 600 V; Vas = 0 V; T, #125 °C 1.0 | mA I Gate source leakage current | Vax = £30 V; Vos = 0 V 100 | nA Fes Drain-source on-state Ves = 10V; BUKA55-600A 20 | 2 om resistance lp = 25 A BUK455-6008 | 25 a DYNAMIC CHARACTERISTICS Tre = 25°C unless otherwise specitied SYMBOL |PARAMETER [CONDITIONS MIN, | TYP. | MAX. | UNIT om Forward transconduciance __|Vos = 25Vilp=25A 35) 45] - s a Input capacitance Ves = 0 V; Vos = 25 Vif = 1 MHz - | 750 [1000 | pF. ce ‘Output capacitance > | 90 | 140 | pF Coe Feedback capacitance - 40 70 pF we FTum-on delay time Voo = 30 Vilg = 28 A; ~ [to [45 | as ¢ Tum-on rise time fos = 50.2; > | 45 | 6 | as ba -Tum-ofl delay time = | 100 | 140 | ns u | Tum-off fall time = 40 65. ns. u Internal drain inductance | Measured from contact screw on a 35 : nH lab to centre of die u Internal drain inductance: | Measured from drain lead 6 mm = 45 . nH irom package to centre of cle u Internal source inductance Measured from source lead 6 mm ° 75 - nH rom package to source bond pad December 1988 Philips ComponentsPowerMOS transistor BUK455-600A BUK455-600B REVERSE DIODE RATINGS AND CHARACTERISTICS ‘Tre = 25°C unless otherwise specified ‘SYMBOL [PARAMETER [CONDITIONS Min, | TYP. [ MAX. | UNIT toe [Continuous reverse drain Sle as en current ‘gow Pulsed reverse drain current |- ~ | wl a is Diode forward voltage b= 45A;Voo=0V sas |v ‘5 Reverse recovery time (5A; -dlsdt = 100 Ais; ~ | 1200, - | ng . Reverse recovery charge | Vas = 0V: Va= 100 V - [eo] = | uc i= Normatues Power Doig 10 | ” 2 10 ° 2 ° ’ » 2 ° ar ° ” © Mm 10 im 10 io mec Fig.2, Normalised power dissipation. Fig.4. Sate operati tna = Vos 100 1000 vos/v ar@8. Trp = 25°C PD% = 100-Po/Po a5:0= H(Tne) ‘= (Vos) tou, ‘pulse; parameter ty a: arte rar Ourg 1 aeRO Rm 10 1» e ro. = » o a 2 ° » or » a aco oe 0 @ mw Ie 1605 Ea sor 101 me ia 3, Normalised continuous drain current. Fig.5. Transient thermal i We od ofoares teas canciones 10 "05 math parameter Be December 1988 Philips ComponentsPowerMOS transistor BUK455-600A BUK455-600B D/A Fig.6.' Typical output characteristics, T; = 25 "06 Weipa Veg parameter Veg. wa ‘ ' Fig.9. Typical transconductance, T, ~ 25°C. 94 = f{le); conditions: Vag = 25 V" ‘Rost he Fig.7. Typical on-state resistance, 7; = 25°C “= Ml; parameter Vas a ‘Nermaised AOSION = 7 940200 0 40, 8 100 120 10 me Fig.10._ Normalised drain. source on-state resistance. 2 = Rosow/Rosonas-c= 1): lo =2.5 4; Vas = 10V. ‘sa 7 wasiroyy vos we Fig8. Typical transfer characteristics. 9.11. Gate tresnotd votage. lo-= f{Vas) ; CondILIONS: Vos = 25 V: parameter T, Vesire) = H(T); conditions: Ip = 1 MA; Vos = Vas December 1988 Philips ComponentsPowerMOS transistor BUK455-600A BUK455-600B “asa 58 TREBOLD CONDITION ° r 2 3 7 1 2 vas Fig.12._Sub-threshold drain curre 3. Typical reverse diode current. ip= Wise: conciton: P= 25 Cs Vos Vos conditions: Vas = 0 V: parameter T, wosiv capacitances, Cn Cau, C, Yasmine: Von Ure PE ” 7” ane Fig. pial turn-on pte charge characteris %, ee ais 48 Xs parameter December 1988 Philips Components ‘M89-1161/RC_ 5