AP4435GYT-HF

Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS -30V

▼ Small Size & Lower Profile RDS(ON) 21mΩ
▼ RoHS Compliant & Halogen-Free ID -11A
G
S D
Description D
D
Advanced Power MOSFETs from APEC provide the D
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK® 3x3 package is special for DC-DC converters S

application and lower 1.0mm profile with backside heat sink. S
S
G
PMPAK ® 3x3

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage +25 V
3
ID@TA=25℃ Continuous Drain Current -11 A
3
ID@TA=70℃ Continuous Drain Current -8.7 A
1
IDM Pulsed Drain Current -40 A
PD@TA=25℃ Total Power Dissipation 3.57 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 6 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 3 35 ℃/W

Data and specifications subject to change without notice 1

201009214
AP4435GYT-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-10A - 17 21 mΩ
VGS=-4.5V, ID=-6A - 26 36 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.95 -3 V
gfs Forward Transconductance VDS=-10V, ID=-6A - 15 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=-6A - 15 24 nC
Qgs Gate-Source Charge VDS=-15V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 12 - ns
tr Rise Time ID=-1A - 7.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 39 - ns
tf Fall Time RD=15Ω - 21 - ns
Ciss Input Capacitance VGS=0V - 1260 2000 pF
Coss Output Capacitance VDS=-15V - 245 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 210 - pF
Rg Gate Resistance f=1.0MHz - 5.3 10.6 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-2.9A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=-6A, VGS=0V, - 19 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC at steady state.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP4435GYT-HF

50 50

o -10V
T A =25 C -10V T A = 150 o C
-7.0V -7.0V
40
-5.0V 40 -5.0V
-ID , Drain Current (A)

-4.5V

-ID , Drain Current (A)

-4.5V

30 30

V G = -3.0V
V G = -3.0V
20 20

10 10

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

32 1.6

I D = -6 A I D =-10A
T A =25 ℃ V G =-10V
1.4
28
Normalized RDS(ON)
RDS(ON) (mΩ)

1.2

24

1.0

20

0.8

16 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 1.4

8 1.2
Normalized -VGS(th) (V)
-IS(A)

6 1.0

T j =150 o C T j =25 o C
4 0.8

2 0.6

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

o
-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP4435GYT-HF

1600
f=1.0MHz
10

I D = -6 A
V DS = -15 V
-VGS , Gate to Source Voltage (V)

8
1200
C iss

C (pF)
6

800

400

2
C oss
C rss

0 0
0 10 20 30 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5
Operation in this area
limited by RDS(ON)
10
100us
0.2

1ms
-ID (A)

0.1 0.1
1
10ms
100ms 0.05 PDM

0.1
1s T

0.02
Duty factor = t/T
T A =25 o C DC 0.01
Peak Tj = PDM x Rthja + T a
Rthia=85 ℃/W
Single Pulse
Single Pulse

0.01 0.01
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform