BDX53B, BDX53C (NPN),

BDX54B, BDX54C (PNP)

Plastic Medium-Power
Complementary Silicon
Transistors
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These devices are designed for general−purpose amplifier and
low−speed switching applications.
DARLINGTON
Features 8 AMPERE
• High DC Current Gain − COMPLEMENTARY SILICON
hFE = 2500 (Typ) @ IC = 4.0 Adc
POWER TRANSISTORS
• Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B 80−100 VOLTS, 65 WATTS
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
• Low Collector−Emitter Saturation Voltage − 4
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
These Devices are Pb−Free and are RoHS Compliant*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS 1
2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating Symbol Value Unit 3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage VCEO Vdc
TO−220
BDX53B, BDX54B 80
CASE 221A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BDX53C, BDX54C 100
STYLE 1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage VCB Vdc
BDX53B, BDX54B 80

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
BDX53C, BDX54C 100 MARKING DIAGRAM
& PIN ASSIGNMENT

ÎÎÎ
Emitter−Base Voltage VEB 5.0 Vdc
4

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous IC 8.0 Adc
− Peak 12 Collector

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 0.2 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C PD 65 W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25°C 0.48 W/°C BDX5xyG
Operating and Storage Junction TJ, Tstg −65 to +150 °C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Temperature Range AY WW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be 1 3
assumed, damage may occur and reliability may be affected. Base 2 Emitter

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS BDX5xy = Device Code

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit x = 3 or 4
y = B or C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Ambient RqJA 70 °C/W A = Assembly Location
Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W Y = Year
WW = Work Week
G = Pb−Free Package

*For additional information on our Pb−Free strategy and soldering details, please ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package
Reference Manual, SOLDERRM/D. dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 15 BDX53B/D
 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

TA TC
4.0 80

PD, POWER DISSIPATION (WATTS)

3.0 60

TC

2.0 40

TA
1.0 20

0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 100 mAdc, IB = 0) BDX53B, BDX54B 80 −
BDX53C, BDX54C 100 −
Collector Cutoff Current ICEO mAdc
(VCE = 40 Vdc, IB = 0) BDX53B, BDX54B − 0.5
(VCE = 50 Vdc, IB = 0) BDX53C, BDX54C − 0.5
Collector Cutoff Current ICBO mAdc
(VCB = 80 Vdc, IE = 0) BDX53B, BDX54B − 0.2
(VCB = 100 Vdc, IE = 0) BDX53C, BDX54C − 0.2

ON CHARACTERISTICS (Note 1)
DC Current Gain hFE 750 − −
(IC = 3.0 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage VCE(sat) − 2.0 Vdc

(IC = 3.0 Adc, IB = 12 mAdc) − 4.0
Base−Emitter Saturation Voltage VBE(sat) − 2.5 Vdc
(IC = 3.0 Adc, IC = 12 mA)

DYNAMIC CHARACTERISTICS
Small−Signal Current Gain hfe 4.0 − −
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C − 300
BDX54B, 54C − 200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

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 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

VCC 5.0
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V ts
D1 MUST BE FAST RECOVERY TYPES, e.g.: 3.0
1N5825 USED ABOVE IB [ 100 mA 2.0
RC
MSD6100 USED BELOW IB [ 100 mA SCOPE
TUT 1.0 tf

t, TIME (s)
V2 RB

μ
0.7
APPROX 0.5
+ 8.0 V 51 D1 [ 8.0 k [ 120 0.3
0 tr
0.2 VCC = 30 V
V1 + 4.0 V
IC/IB = 250
APPROX 25 ms 0.1 IB1 = IB2
-12 V for td and tr, D1 is disconnected
and V2 = 0 0.07 TJ = 25°C td @ VBE(off) = 0 V
tr, tf v 10 ns
For NPN test circuit reverse all polarities 0.05
DUTY CYCLE = 1.0% 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Test Circuit
Figure 3. Switching Times

1.0
THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
0.5
r(t) EFFECTIVE TRANSIENT

0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RqJC(t) = r(t) RqJC
0.07 0.02 RqJC = 1.92°C/W
0.05 D CURVES APPLY FOR POWER
t1 SINGLE PULSE TRAIN SHOWN
0.03 SINGLE PULSE t2 PULSE READ TIME AT t1
0.02 0.01
DUTY CYCLE, D = t1/t2 TJ(pk) - TC = P(pk) RqJC(t)

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

20 There are two limitations on the power handling ability of

100 ms
10 500 ms a transistor average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

5.0 breakdown. Safe operating area curves indicate IC −VCE

5.0 ms limits of the transistor that must be observed for reliable
2.0 1.0 ms dc
TJ = 150°C operation, i.e., the transistor must not be subjected to greater
1.0 BONDING WIRE LIMITED dissipation than the curves indicate.
0.5
THERMALLY LIMITED @ TC = 25°C The data of Figure 5 is based on TJ(pk) = 150°C; TC is
(SINGLE PULSE) variable depending on conditions. Second breakdown pulse
0.2 SECOND BREAKDOWN LIMITED
limits are valid for duty cycles to 10% provided
CURVES APPLY BELOW RATED VCEO
0.1 TJ(pk) t 150°C. TJ(pk) may be calculated from the data in
0.05 Figure 4. At high case temperatures, thermal limitations will
BDX53B, BDX54B
BDX53C, BDX54C reduce the power that can be handled to values less than the
0.02 limitations imposed by second breakdown.
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

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 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

10,000 300
TJ = + 25°C
hFE, SMALL-SIGNAL CURRENT GAIN
5000
3000 200
2000

C, CAPACITANCE (pF)
1000

500
100 Cob
300 TJ = 25°C
200
VCE = 3.0 V
70 Cib
100 IC = 3.0 A
50 50
30 PNP PNP
20 NPN NPN
10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Small-Signal Current Gain Figure 7. Capacitance

NPN PNP
BDX53B, 53C BDX54B, 54C

20,000 20,000
VCE = 4.0 V VCE = 4.0 V
10,000 10,000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

5000 TJ = 150°C 5000 TJ = 150°C

3000 3000
2000 2000 25°C
25°C
1000 1000
-55°C -55°C
500 500

300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C

2.6 2.6
IC = 2.0 A 4.0 A 6.0 A IC = 2.0 A 4.0 A 6.0 A

2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

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 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

3.0 3.0
TJ = 25°C TJ = 25°C

2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)
2.0 2.0

1.5 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250

1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

NPN PNP
BDX53B, BDX53C BDX54B, BDX54C
+5.0 +5.0
θV, TEMPERATURE COEFFICIENT (mV/ °C)

+4.0 θV, TEMPERATURE COEFFICIENT (mV/ °C) +4.0

*IC/IB v hFE/3 *IC/IB v hFE/3
+3.0 +3.0
+2.0 25°C to 150°C +2.0 25°C to 150°C
+1.0 +1.0
-55°C to 25°C -55°C to 25°C
0 0
-1.0 *qVC for VCE(sat) -1.0 *qVC for VCE(sat)
-2.0 -2.0
25°C to 150°C 25°C to 150°C
-3.0 qVB for VBE -3.0 qVB for VBE
-4.0 -55 to 150°C -4.0 -55 to 150°C

-5.0 -5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients

105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

μ

VCE = 30 V VCE = 30 V
103 103

102 102
TJ = 150°C
TJ = 150°C
101 101
100°C
100°C
100 100
25°C
25°C
10-1 10-1
-0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE, BASE‐EMITTER VOLTAGE (VOLTS) VBE, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region

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 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

NPN COLLECTOR PNP COLLECTOR

BDX53B BDX54B
BDX53C BDX54C

BASE BASE

[ 8.0 k [ 120 [ 8.0 k [ 120

EMITTER EMITTER

Figure 13. Darlington Schematic

ORDERING INFORMATION
Device Package Shipping†
BDX53BG TO−220 50 Units / Rail
(Pb−Free)

BDX53CG TO−220 50 Units / Rail

(Pb−Free)

BDX54BG TO−220 50 Units / Rail

(Pb−Free)

BDX54CG TO−220 50 Units / Rail

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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