TPC8114

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)

TPC8114
Lithium Ion Battery Applications
Unit: mm
Notebook PC Applications
Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 47 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

JEDEC ―
Drain-source voltage VDSS −30 V
JEITA ―
Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V
Gate-source voltage VGSS ±20 V TOSHIBA 2-6J1B
DC (Note 1) ID −18 Weight: 0.080 g (typ.)
Drain current A
Pulse (Note 1) IDP −72
Drain power dissipation (t = 10 s)
PD 1.9 W
(Note 2a)
Circuit Configuration
Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b) 8 7 6 5
Single pulse avalanche energy
EAS 211 mJ
(Note 3)
Avalanche current IAR −18 A
Repetitive avalanche energy
EAR 0.19 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C 1 2 3 4

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

1 2006-11-15
 TPC8114
Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 65.8 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 °C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPC8114 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2:

(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)

(a) (b)

Note 3: VDD = −24 V, Tch = 25°C (initial), L =500μH, RG = 25 Ω, IAR = −18 A

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: • on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)

Year of manufacture
(The last digit of a year)

2 2006-11-15
 TPC8114
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA

Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V
VGS = −4 V, ID = −9 A ⎯ 5.2 6.8
Drain-source ON resistance RDS (ON) mΩ
VGS = −10 V, ID = −9 A ⎯ 3.1 4.5
Forward transfer admittance |Yfs| VDS = −10 V, ID = −9 A 23.5 47 ⎯ S
Input capacitance Ciss ⎯ 7480 ⎯
Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1320 ⎯ pF

Output capacitance Coss ⎯ 1460 ⎯

Rise time tr 0V ⎯ 25 ⎯
ID = −9 A
VGS
−10 V VOUT
Turn-ON time ton ⎯ 36 ⎯

RL = 1.7 Ω
Switching time 4.7 Ω ns
Fall time tf ⎯ 235 ⎯

VDD ∼
− −15 V
Turn-OFF time toff Duty < ⎯ 625 ⎯
= 1%, tw = 10 μs

Total gate charge

Qg ⎯ 180 ⎯
(gate-source plus gate-drain)
VDD ∼− −24 V, VGS = −10 V, nC
Gate-source charge 1 Qgs1 ID = −18 A ⎯ 10 ⎯
Gate-drain (“miller”) charge Qgd ⎯ 60 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse
Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −72 A
current
Forward voltage (diode) VDSF IDR = −18 A, VGS = 0 V ⎯ ⎯ 1.2 V

3 2006-11-15
 TPC8114

ID – VDS ID – VDS
−20 −50
−2.8 Common source −4 −3 −2.8
−4
Ta = 25°C
−3 −2.6 Pulse test −10
−16 −40 −8
−10 Common source
−6

Drain current ID (A)

Drain current ID (A)

−8 −2.6 Ta = 25°C
Pulse test
−12 −30
−2.4
−2.4
−6
−8 −20

−2.2 −2.2
−4 −10

VGS = −2 V VGS = −2 V

0 0
0 −0.2 −0.4 −0.6 −0.8 −1.0 0 −1 −2 −3 −4 −5

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

−50 −0.5
Common source Common source
VDS = −10 V Ta = 25°C
Pulse test Pulse test
VDS (V)

−40 −0.4
Drain current ID (A)

−30 −0.3
Drain-source voltage

−20 −0.2

25
−4.5
−10 −0.1 −9
100 ID = −18 A

Ta = −55°C
0 0
0 −1 −2 −3 −4 −5 0 −4 −8 −12 −16 −20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yfs| – ID RDS (ON) – ID

100 100
(S)
Forward transfer admittance ⎪Yfs⎪

Ta = −55°C
Drain-source ON resistance

25
10 10
RDS (ON) (mΩ)

VGS = −4 V
100

−10

1 1

Common source Common source

VDS = −10 V Ta = 25°C
Pulse test Pulse test
0.1 0.1
−0.1 −1 −10 −100 −0.1 −1 −10 −100

Drain current ID (A) Drain current ID (A)

4 2006-11-15
 TPC8114

RDS (ON) – Ta IDR – VDS

20 −100
Common source
−10
Pulse test −3

(A)
Drain-source ON resistance

15 −5

Drain reverse current IDR

−10
RDS (ON) (mΩ)

10 −1
ID = −18 A, −9 A, −4.5 A VGS = 0 V

−1
VGS = −4 V
5

Common source
ID = −18 A, −9 A, −4.5 A Ta = 25°C
−10 V Pulse test
0 −0.1
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2

Ambient temperature Ta (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Ta

100000 −2.0
Common source
VDS = −10 V
Vth (V)

−1.6 ID = −1 mA
Pulse test
(pF)

Ciss
10000
Capacitance C

Gate threshold voltage

−1.2

Coss

1000 −0.8
Common source Crss
VGS = 0 V
f = 1 MHz −0.4
Ta = 25°C
100
−0.1 −1 −10 −100
0
−80 −40 0 40 80 120 160
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)

PD – Ta Dynamic input/output characteristics

2.0 −30 −30
(1) Device mounted on a Common source
(1) glass-epoxy board (a)
(Note 2a) VDD = −24 V ID = −13 A
Drain power dissipation PD (W)

VDS (V)

VGS (V)

1.6 (2) Device mounted on a Ta = 25°C

glass-epoxy board (b) Pulse test
(Note 2b)
VDS
−20 −20
t = 10 s
1.2
Drain-source voltage

Gate-source voltage

(2)
−12
−12
0.8
−10 −6 −10
−6 VDD = −24 V
0.4

VGS

0 0 0
0 40 80 120 160 200 0 40 80 120 160 200 240

Ambient temperature Ta (°C) Total gate charge Qg (nC)

5 2006-11-15
 TPC8114

rth − tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b)
Normalized transient thermal impedance

(Note 2b)
t = 10 s (1)
100
rth (°C/W)

10

Single pulse

0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

−100

1 ms*
ID max (pulse) *
10 ms*
−10
Drain current ID (A)

−1

−0.1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature. VDSS max
−0.01
−0.01 −0.1 −1 −10 −100

Drain-source voltage VDS (V)

6 2006-11-15
 TPC8114

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

7 2006-11-15