ELECTROSTATICS Electric Field tent est faye AN | retcetrie Potent Iv wit“ | &. © G Fay 1 catar v=- fear unite 2 © Electric Dipole: Equal and Opposite charge separated by small distance, Dipole moment P=! vectodirecton from negative to positive charge unit Cm is B=Ep +(-Ea) Bie gear eel 9 (eo (ro) £-_4 ( 1 7 a 3] ree (Feat) 22a Anal?) ancy P=? w ‘eye 2p 5 For shor dipole r> 1 (aietion we tat Fay oD Fae) P ara V=V, +Vy= ea Fl? 7) E-E,c0s0+Eyc0s0 since Ea Ey B26 ,cos0 P Ale? 22 BP rst digoter>>1 ra v=¥, “Torque on Dipole Net force = 19 ‘Torque = Force x4 distance ExEc (BC gE Asin 0 qh sino += PEsin0= PxE Eg = PE for 8= 90" ‘work done in Rotating Dipole foo Energy of Dipole: U =-PE eos 8 Stable equilbium 0= 0, U= PE ‘Unstable equlibriam = Ps U=PE, os0)PE “Gauss Theorem Toul lee Tax Goal po of nes otf) emers fam che ste is ines he charge enclosed frase E due to long charged wire: Lina tre dey = fase : Jos. fea fea, Se For dS:and ds, 0= 9° Forcurved surface d8; 0 2% pe A 21 age Barley wage Tay F Surface charge density = 2 For nonconducting plate charg ison both side For conducting sheet E=£ "= Bisindependent of distance fom the shel E due to charged Hallow Sphere: a ‘Volume charge density p= rs pa es. sfe-5 lene?) 1 4 On surface Frayne 1a = 14 ouside & Ree asq=O inside Capacitor:- Q=CV_unit:- Farad, * C depends on dimensions ‘Capacitance for parallel plate capacitor Consider || plate capacitor with area of plate A, capacitance C and dist. b/w plates d a Q if OV Bd for charged sheet}: for surface charge density If dielectric with dielectric constant k is filled b/w the plates. C=kC Surface charge Density Q o-2:.Q-0A Electric field BoB, Basse Potential V = Ex d v=Sla+p)+ 2 v S(oemes) v=2(a-eeg) Energy of Capacitor Energy = work done in bringing charge at potential V a Energy Density (energy per unit volume) lot LAG cal? ev! 1M ea 2M 2a te salons Anda Unit of energy density:- Jim?CURRENT ELECTRICITY 4 Electric Current: = unit Ampere + Scalar quanti itu osm) as + -relaxationtime (105) nes, ml (assy) ory 1 number offi electrons in wnt volume resinvey p= 24 7 Also J=o8 “Temperature dependance of eisvity iecric Energy & power Colour Coding of Resistor "with crease tempers {conductors decrease. pine semiconductors; n increase pT doc Power= Energy Tine = Work done] Time Iris salar quansiy vae=PRt= R ame visre-¥ = — t= 1 2 sin tne FRR aera P= caiag [CHOPS TA Fstctcmbnonotvecices RIK UR: tegsame — fESV antag [ae Stow Calas TE Ne ne ‘Let Unknown Resistance = X_ Cetin pata Fee reoR a ean ie ; X00 Batmecindion P/Q=R/S athe ROR) Pena AB amet al -<. 2 1 Patio Genome Le nesny BA ‘battery can be interchanged at null pt a a Meter bridge in most sensitive when null pt, in middle, Riot : "ivan a tenor ar E rota gt cece aie ig dw no When K, inserted then E) = K x Ly aise Kxly ‘When K2 insted then Es ‘When only Kt inserted then E= KL ‘When Kind Ks both ae inser then VeKxL; r=a{4 1 2. Sensitivity increase with increase in length 3. Asmll P Dean he measured accurately with the help of Dtetiometr. The resistance of voltmeter i high bt not Infinity to work as an ideal volume. 44 The intemal resistance of cll can be measured with the ‘help of potentiometerMOVING CHARGES & MAGNETISM Magne Field Prac iv magnet, moving cage. Vector quanti Ua Toh ache gas awe) SS ‘ested Experiment: Cument canying conductor produces magnctic fl Blo Savart Law I gives MF. at point oun ‘eument carrying conductor ap tain nF Ampere’s Circuit Law:- 2d = Then integral of magnet Flt B for any closed circuits equal to yo times current threading though this closed loop and this closed loop i ealled Ampedan loop. Mo an tay Permeabiliyof fee space Direction of B:- Perpendicular od andr. =107 Tua 1 0-99 : is idl a iP max sind Vector Form di ‘Mag. Fic At Contre of Cal ap 29 isin 0 Due to Ininitely Long Wire Magnetic el at P dv to wire Joar-nsi 4 af at sot Ba) =p as Direction:- Right Hand Thumb Rule curly finger gives eld direction if thumb of Fight han points cutentoutside ae ae ‘On Axis of Col isin 90" cay =o isin 2 Sasina iia) a at pat due to Solenoid Joe naroose N- Tota Turns Ral =i J i ‘adt+0+0+0 (Turns per unit Lena) aes) B. Due to Toroid (Closed woenoia) inane BU2er)= HN Force on charge ta Bleed 1 (both for est & mosion) =— 240. ‘Magee Fie F=qV Bin 0 only for moving charge) i [asa t= ger an Principle:- The repeated motion of charged particles under mag. & ele Feld accelerates it EF. provides energy while MF. changes direction, Construetion:- Dees, Sources, MF. RF Osiltor ote i pall arent Snag wn Fase aT ony EWE r (ima an r-(2} an By Femings LHR force is of stracion for same D.C Direction & magnitude are fixe ‘A.C Change in both magnitude and direction, HALF cvCLE: Vavg.= f induction, induction ‘Construction: two cil primary & secondary | Consteuctons ‘Step up: Increase voltage k>1) and decrease |) Armature col current (G) Feld magnet Step down: decrease voltage k< 1) and (Gi) Siping increase current. Gi) Brushes ¥ d6, ‘Theory:| Me a " lk our on inp = BAY-asinat) e= BAN osin ot fu = 69> BAND AG. Creal Resistance is independent frequency of AC. aN ela ‘Pare capacitor Grcut (creat containing capadiior nly) o-cv do a Ww a’ a a C4 Wisin) i=€V, Linon aie ea I eCVo coset Ve infor + /2) ‘Pare inductive circuit VeVpsinat Ry HX, =X)" XP 7 z= fr +{to- 2 (ees) 1 Ca ZARA, =|RAY OPTICS Reflection of Light: i = r, Magnitization m = += —* ~+ Convex Mirror +f, m<1and negative € m> 1 (enlarged) m < 1(small) ~ Concave Mirror —f,m > 1,< 1,= 1 both +& — = real inverted. + virtual erect. 5 jet 7 =, 2B SLES sine” ve a ta ‘Total Internal Reflection (i) Denser ~> Rarer (li) i> ig sin ic Object AB image A’ B’ AABP ~A A'B'P AFB =A PFN AB _ PB RB PB o AMPE | to sum of interior angles 4 = Refractive Index. 2? = 180 — (1, + ry). Angular Dispersion: 8a = Gy HDA Scattering of light: 6 « = (Rayleigh) Danger signals Red. (RAYLEIGH LAW) sky appears blue. Reddish appearance of sun-rise, sunset. OPTICAL INSTRUMENTS: ‘Simple Microscope: Convex lens of low focal length and high power. : image at D.: Object placed blow Focus and tens. A * OR \ ii) Image at Object placed on focus. Magnifying Power. magnifying Power|m =142 m=14+7) BL ‘Angle made by image @ ~ angle made by object when kept in position of image. Compound Microscope: Objective - (convex lens of low focal length and small aperture). Eyelens - (convex lens of high focal length and large aperture). i) Image at D.: Final virtual inverted Image. R /\ ii) Image at infinity © Final Image at Infinity. ty £ He E@)-% : Length of tube L = vo +f. ‘Astronomical Telescope: Objective - (convex lens of high focal length & large aperture) Eyelens - (Convex tens of low focal length & small aperture.)L = fy + f, (Length of tube) Length of the Tube L = fo + Ue D-Diameter of objective Reflecting Telescope: Concave mirror acts as an objective. Newtonian Telescope ays fom object e <@ ADVANTAGES: 1) Bright Image is formed. 2) Image free from chromatic aberration, Resolving Power: The ability of optical instrument to form distinct image of two object situated close to eachother. [ee = 1 Cpe limit of resolution Partially Polarised ig 05 ‘Telescope [@ r=4) Brewsters law| linear polarised D fant, =HWAVE OPTICS ‘+ Awavelet is the point of disturbance due to propagation of light. ‘© Awavefront(w.f,) is the locus of points having the same phase of oscillation. * Aline perpendicular to a wavefront is called a ‘ray’ VW Cylindrical we. Spherical w.f froma linear source Plane w.f. HUYGEN'S PRINCIPLE:- Find the shape of wavefront at any particular instance. The two postulate are- (i Each paint on primary w. facts as a source of secondary w.f. which travel in all direction with speed of light. (li) The forward envelope or common tangent of secondary wf. give shape of new wavefronts, 4 Secandry ey J rsew nt Primary ( Reflection by Huygen’s Principle Refraction by Huygen’s Principle AMPN and AMQN, MN = MN common side ZP = ZQ=90" ,PN=MQ (dist. covered by light in same time) | PN=Vit AMPN = AMQN (by SAS) MQ=V,t 90-i=90-r sini _ PN/MN _ PN Mo Sinr MQ/MN PQ out Ho vit ve INTERFERENCE OF LIGHT: Variation of intensity of light due to overlapping of two light waves, Constructive: - Resultant increase and bright light is formed, Path diff Ax = 0,2,22,.0..0.3% Destructive:- Path dit Phase dil Ad = 0,21, 4n,6n,.....,2nm Phase dil Ag = n,31,5n-~(2n— 1) 2 00 = xa Destructive:- Resultant is Young's double slit Experiment (YDS):- A monochromatic light beam is incident in double slit the pattern obtain on screen co| alternate bright and dark bands called fringes. Expression for Interference Patter Expression for fringe width:Tet, two interference wave y, =a,sinwt Y2=a,(sin(wt +) [= phase diff] by Principle of Superposition- Y=Yi*Y2 y=a,sinast +a,sin(wt +4) y=a,sinet+a,sinot cosh+a,coswt sing y=sinut(a, +a,cos}) +a,coswt sind a, +a,cos = Reos@ lg Rsin@ | y=Rsinest cos0+ coset Rsin® y=Rsin(wt+6)-a, +a,cos+a, sin) = Ros6+Rsind Square both side a; +ajcos*h+ajsin’) = R’cos*8+ R’sin’® ai +a3(cos*+ sin’) = R’(sin’6 + cos’@)-2a,a, cos ai +a! +2a,a,cos = R* R= fa? +a) +2: cos Rox =(@, +82) 0 Ryuy =(@, a2) 0= 180° reat «a 3,P-S,P from AS,PC S,P* =D? +(x+d/2)? from AS,BP, S,P? =D? +(x-d/2)* IS,P? -S,P? = 2xd| (S,P-S,P)(S,P+S,P)=2xd (S,P-S,P)(D+D)=2xd (S,P-S,P)(D+D)=2xd ,p-5,p= 24 2D From bright fringe for path difference, S,P-S,P=nd BEX 1%, =n = corm _ mp ~ nk pace _mp 2 d For destructive interference: Beant | pexuns ADI AD _(2n-1)AD =(2n-)— =| -)—— x, =(2n Dog B=(n+1)-1)54 2a 2D d Interference pattern the intensity ofall bright band is equal, + Coherent Source - The two light source behave like coherent source if they belong to same parent source. + Diffraction Its bending of light at sharp corners or edges. + Fresnel's distance -[d;= &/2]‘Single slit diffraction ~ © dark band or minima - 2a ua aE Eee ‘Linear width of central maxima: [anste= B,=0xD 2D By =—DUAL NATURE Of MATTER AND RADIATION Photoelectric emission: The emission of electron due to action of light of suitable energy is called photoelectric emission. ‘The e emitted are called photoelectrons. Properties of Photon- (a) Photon isa bundle of energy-E. (b) Photon travel with speed of light. (o) Rest mass of photon is zero. (@) momentum of photon is p = B/C. Photoelectric effect ~ The of e~ from a metal surface when light of suitable frequency is incident on itis called photoelectric effect. Alkali metals like Li, Na, K show photoelectric effect with visible light metal like Zn, mg, Ca respond to ultraviolet light, Laws of Photoelectric emission - (a) minimum energy required called threshold energy or work function. The freq. corresponding to threshold energy called threshold freq. E=f=hvy vvp = threshold frequency Work function(E = (b) Every photon interact with a single electron. (0) increasing the energy of incident photon the Kinetic energy of e~emitted increase. ng > E = he/d Effect of Intensity:- * 1 1 n * Current | ke Ke, Potential 1, > lp (Freq. = constant) > - {_, Intensity Intensity Intensity” Voltage —>" Effectof frequency: Current wow * fest hanes Ponta ce Determination of Plank’s constant:- frequency From Einstein Photoelectric equation ~ hy = hv +K-E evo = K-E hv= hyp + ev Einstein Phataclectric E Photoelectric effect was explained using quantum theory by Einstein. E=O4K-E 1 hv = hyp +5mv? 2 De-broglie Hypothesis ~ Acc. to De-Broglie a wave is associated with every moving particle. This wave is called matter wave and its wavelength is known as de-Broglie wavelength.Expression for A: Interm of charge & potential: By particle nature, = me? E=av By wave nature E = hy h equate both the energy 2 Pravin met = hy a For electron m =X 2me = p* ie ih P= Vine m=z Therefore hob * Fae P > Vime an = momentum) > K = Boltzmann constant {i Electron gun - producers a fine beam of e~ of high speed di) NickeL crystal It is used to difract the e~beam. {dij Detector - It's used to find the intensity of diffracted e-beam. | Theory/ working: A high energy e-beam is incident ona nickel crystal which diffracts this e~beam. The intensity of diffracted beam in various direction is measured with help of detector mounted on circular scale, At 54 volta clear hump (maxima) at angle of 50°, then by brage’s law for diffraction by crystal. asin = nal 0.91 xsin 65° = 1x2. A= 165A by de-Broglie hypothesis, h a 1.66AATOM & NUCLEI ‘Exp. Setup: (= g a ee Hees soccer Leodcaviy Calimator 7ieOol OBSERVATIONS: (i Most of the a-particle passed underiated. (il) Few a-particle scattered at angle 0 1 Ne sint 0 (iii) Very few retraces their path. 1), Most ofthe part of atom is hollow. 1i) The central core is (+) very charged called nucleus (10-15m) € revolves around the nucleus & radius of orbit decreases due to decrease in energy (dement) Distance of closest approach: 11 ete) 2 > ae, Zee Taw ane, (Em) Impact parameter: It is perpendicular distance ofthe velocity vector when a —particle from centre of nucleus when « particle is far away from atom. To 1 ae 4c, mv? cot al 2| @ smaller is b’ larger is angle of scattering i) eee 1. The e~ can exist in certain orbit without radiating energy. 1 | 2. Only those orbit are allowed for which the angular momentum (mvr) is integral multiple of h/2r. mvr==|n= Fe] p= 1.2.3... Quantum No. 3. Blectrons Reboring in their stationary orbit do not radiate energy (non-radiative orbits or BOHR’S orbits) 4. Ifthe e- goes from orbit of energy E; to other orbit of energy Ez then a photon of energy hv is radiated such that hv = EE enh? xmez ihetina attra ©, for hydrogen 2= 1 ENERGY OF ROHR OREITS:- ee E= KE +PE=5mv? + (2) anegr 1 ze? ze (my? __ 120” amet Inet” Ae For HAtom|E, = Hydrogen spectrum consist of group of radiation emitted by a h-atom whose wavelength is given as berg constant = Rz"| Bneor, Continua 0.85 eet WAM | +136 Lyman Series: Electron jump from higher orbit to first orbit. n=L,n, =2,3,4. Ultra Voilet Region BALMER: Visible Region Paschen, Brackett, P Fund :- Far InfraredWucleons = Protons + Neutrons Mass = Atomic + No. of No. Neutrons. A A Kor OX z Nuclear force strong. short range spin dependent charge independent repulsive i ‘attractive Nuclear volume & Mass No. 7 ee tamu = EG Siccaad = 1.66 x 10-2? kg or|R=R A Electron volt (ev) - unit of energy 1eV =16x 107). lamu = 931MeV ‘NUCLEAR DENSITY: 1027 kg/m* Independent of mass no. and same For all elements mA _ 3m SP3nR SA FRG ‘Isotopes: Same protons (Z) but different(A) No. of Neutron. Isobars: Same (A) but different (2) Isotones: Same no. of neutrons. Ex? gH, HP, ,H?; 21, 2H, oH Ex: q1Na®; ygNe; 29Ca; ygAr” Ex: HP; aHe*; 08; 6C'* Mass Energy Relation: Variation in B.E/Nucleon with mass no. B= ame 1. B.E/Ais very less for A = 8 and then increases up to A = Energy & mass are 2. Decreases after A= 120° interconvertible. 3. Maximum 108mev for Mass Defect: Difference in masses. of | Range A= 30" to A= nucleons & nucleus. 120° 3 ‘Am = [2M, + (A —2)Mg] 4. Peak for 2Het, 6C'%, 90" SS are nicl ete indicate more stability = Binding, Energy: Energy equivalent. to mass | 5 More is B.E/A, more is Z Gaeta eA ee stability of a nucleus 2 Packing Fraction: B.E per nucleon. i - Ree e en 30 Mass No. (A) 200, ‘NUCLEAR FISSION: Splitting ofheavy nucleus. 5,07 + gn? > 4,BC™™ + ,,Ki™ +3 on™ + O@200Mev) ‘NUCLEAR FUSSION: Fusing two or more lighter nuclei. ,H? + ,H! > \H? +e" 4v RADLOACTIVITY: Spontaneous emission of radiation (a, fy) from radioactive nucle. ‘Laws of Radioactive Decay: aatie’) B (electron) (photon) 1, Spontaneous. 2x16x10-8C | -16« 10°C 0 2. Rate of dis integration is directly 4X 1.67 x 10-2” kg kg Rest mass 0 proportional to no. of atom at that time. Deflected by electric No effect 3. Independent of temperature, pressure ete Or Mag. Field 4. inot emitted simultaneous Less than B Less than y Speed of Light, N= Noe Unit of Radioactivity oi tm Half ie: fee © Curie (i) ~ 3.7 x 10° decay /see {activity of 1g radiurn). ‘+ Becquerel (Bq) ~ 1 decay/sec (S11 unit of radioactivity) t= total time ‘+ Rutherford (Rd) — 10*Decay/sec. a-decay y*=4> LW + He 7 a B-decay x’ > ,¥ +. n> p+e'+v" B decay ete eke fae he, ydecay , X Unopeetey ph decayELECTRONIC DEVICES — 5 - Extrinsic semiconductor; (Impure semiconductor) B-Type: (Acceptor type) trivalant (B, Al, In, Ga) Majority carrier holes P Doping: Mixing suitable impurity in Ai, Ga. a level NET CHARGE ON PURE OR IMPURE SEMICONDUCTOR IS 0 ZERO. ve ‘PNJunction; * Width of Depletion laver decreases with F.B. and Vice Versa opera ecomeartolons e * Potential Barrier: Potential Developed across junction. te ‘Rectifiers: conversion of a.c into d.c Principle: Diode conduct in RB and do not conduct in P.B. fiEFRectle, L Pao (toy Wo TTY “4 — (CE Mode) Et be Current Gain 6 = 1./Ry, Principle: Small change in input current in result in large change in 0/Ple + Lev ED ight emiting Diode: used in FB ight produced du oe hcombination. «puoroDi0ne —{5}= RB. e~h pairs generated due to incident photon hy > + SOLAR cELL —£] J} convert solar energy into electrical energy properties + {E, ~ 1.Sev. high optical absortion electrical conductivity ‘Transistor Action: ‘Logic Gates: Blectronic devices which give one 0/P for one or more I/P i. i Basic logic Gate: AND, OR, NOT UNIVERSAL GATE: NAND, NOR EVs oR AND NOT NAND NOR rg< Symbol i ‘ DD = ED > Mu “Truth Table intl ty= Sofie AB Ase AB x AB A+B Base regions very thin and regulates of | ; i ; : ‘ O/pcurrent aA ‘ ; ; i; 10 1 0 1 ° ed 1 1 ° ° °