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A3250LLT
A3250LLT
Field-Programmable, Chopper-Stabilized
Unipolar Hall-Effect Switches
Discontinued Product
This device is no longer in production. The device should not be
purchased for new design applications. Samples are no longer available.
Recommended Substitutions:
For existing customer transition, and for new customers or new appli-
cations, contact Allegro Sales.
Allegro MicroSystems, Inc. reserves the right to make, from time to time, revisions to the anticipated product life cycle plan
for a product to accommodate changes in production capabilities, alternative product availabilities, or market demand. The
information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no respon-
sibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use.
A3250 and A3251
Field-Programmable, Chopper-Stabilized
Unipolar Hall-Effect Switches
Features and Benefits Description
▪ Chopper stabilization for stable switchpoints throughout The A3250 and A3251 are field-programmable, chopper-
operating temperature range stabilized, unipolar Hall-effect switches designed for use in
▪ Externally programmable operate point (through VCC pin) high-temperature applications. These devices use a chop-
▪ On-board voltage regulator for 4.2 V to 24 V operation per-stabilization technique to eliminate offset inherent in
▪ On-chip protection against: single-element devices.
▫ Supply transients
The A3250 and A3251 are externally programmable
▫ Output short-circuits
devices. The devices have a wide range of programmabil-
▫ Reverse-battery condition
ity of the magnetic operate point (BOP) while the hysteresis
remains fixed. This advanced feature allows for optimiza-
tion of the device switchpoint and can drastically reduce
the effects of variations found in a production environment,
Package: 3-pin SOT89 (suffix LT) and such as magnet and device placement tolerances.
3-pin SIP (suffix UA) These devices provide on-chip transient protection. A Zener
clamp on the power supply protects against overvoltage
conditions on the supply line. These devices also include
short-circuit protection on the output.
The output of the A3250 switches LOW when subjected
to a south-polarity magnetic field with a flux density that
exceeds the threshold for BOP , and switches HIGH when the
field drops below the magnetic release point, BRP . The out-
put of the A3251 has the opposite polarity, switching HIGH
in a south-polarity magnetic field that BOP , and switching
LOW when the field drops below BRP .
VCC
Program/Lock
Programming
Logic
Regulator
Offset Adjust
VOUT
Sample and Hold
Dynamic Offset
Cancellation
Low-Pass
Filter
GND
3250-DS Rev. 11
A3250 and Field-Programmable, Chopper-Stabilized,
A3251 Unipolar Hall-Effect Switches
Description (continued)
The other differences in the devices are the power-on state. The for most applications. Type LT is a miniature SOT89/TO-243AA
A3250 powers-on in the HIGH state, while the A3251 powers-on surface mount package that is thermally enhanced with an
in the LOW state. exposed ground tab, and type UA is a three-lead ultramini SIP
for through-hole mounting. The packages are lead (Pb) free, with
Three package styles provide a magnetically optimized package 100% matte tin plated leadframes (suffix, –T).
Selection Guide
TA VOUT
Part Number Packing1 Package
(ºC) Power-On Running2
A3250LLTTR-T 7-in. reel, 1000 pieces/reel Surface mount –40 to 150 High Low
1Contact Allegro for additional packing options.
2In south polarity magnetic field of sufficient strength.
Pin-out Diagrams
Terminal List
Number Name Function
1 VCC Connects power supply to chip
2 GND Ground
LT
1 2 3
UA
Allegro MicroSystems, Inc. 2
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
A3250 and Field-Programmable, Chopper-Stabilized,
A3251 Unipolar Hall-Effect Switches
OPERATING CHARACTERISTICS valid over operating TA and VCC, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Units
ELECTRICAL CHARACTERISTICS
Supply Voltage1 VCC Running mode 4.2 – 24 V
Output Saturation Voltage VOUT(sat) IOUT = 20 mA; Switch state = ON – 175 400 mV
Output Leakage Current IOFF VOUT = 24 V; Switch state = OFF – – 10 μA
A3250; B < BRP; VOUT = HIGH – 4.0 7.0 mA
ICC(off)
A3251; B > BOP; VOUT = HIGH – 4.0 7.0 mA
Supply Current
A3250; B > BOP; VOUT = LOW – 6.0 10.0 mA
ICC(on)
A3251; B < BRP; VOUT = LOW – 6.0 10.0 mA
Output Rise Time tr RLOAD = 820 Ω, CLOAD = 10 pF – – 5.0 μs
Output Fall Time tf RLOAD = 820 Ω, CLOAD = 10 pF – – 5.0 μs
Chopping Frequency fC – 340 – kHz
Power-Up Time ton VOUT = HIGH – 20 50 μs
Output Current Limit1,2 IOUT(lim) Short-circuit protection 60 90 120 mA
A3250; B < BRP, t > ton – HIGH – mV
Power-On State POS
A3251; B < BRP, t > ton – LOW – mV
MAGNETIC CHARACTERISTICS
Initial Operate Point BOP –20 13 50 G
Temperature Drift of BOP ΔBOP BOP ≤ 500 gauss –35 – 35 G
Package TA range = J 5.0 18 35 G
Hysteresis (BOP – BRP) Bhys
Package TA range = L 5.0 13 35 G
PROGRAMMING CHARACTERISTICS
Programmable BOP Values3 BOP(prog) 50 – ≥350 G
Switchpoint set – 6 – Bit
Number of Programming Bits –
Programming lock – 1 – Bit
Resolution BRES – 7.0 – G
TRANSIENT PROTECTION CHARACTERISTICS
Supply Zener Voltage VZ 28 – – V
Supply Zener Current IZ VCC = 28 V – – 13 mA
Reverse Battery Current IRCC VRCC = –18 V, TJ < TJ(max) – – –5.0 mA
1Do not exceed TJ(max): Additional information on power derating is provided in the applications section.
2Short-circuit protection is not intended for continuous operation; permanent damage may result.
3Device can be used below 50 G but is not guaranteed to be a unipolar switch. It is the responsibility of the programmer to verify that the desired
switchpoint has been achieved.
50
65
60
40
55
50 30
45
20
40
-50 -20 10 40 70 100 130 160 -50 -20 10 40 70 100 130 160
TA (°C) TA (°C)
125
120 100
115 95
110 90
105 85
100 80
-50 -20 10 40 70 100 130 160 -50 -20 10 40 70 100 130 160
TA (°C) TA (°C)
30
30
25 10
20
0
15
10 -10 Code 1
5 Code 8
-20 Code 16
0
-50 -20 10 40 70 100 130 160 -30
-40°C to 25°C 150°C to 25°C
TA (°C) TA (°C)
10
10
ICC(off) @ 3.8 V
8
8 ICC(off) @ 12.0 V
ICC(on) (mA)
ICC(off) (mA)
6 ICC(off) @ 26.5 V
6
4
ICC(on) @ 3.8 V
4
2 ICC(on) @ 12.0 V
2
ICC(on) @ 26.5 V
0 0
-50 -20 10 40 70 100 130 160 -50 -20 10 40 70 100 130 160
TA (°C) TA (°C)
240
220
200
180
160
140
-50 -20 10 40 70 100 130 160
TA (°C)
21 1600
Power Dissipation, PD (m W)
20 1500
19 1400 2
18 1300 (R -lay
17 θJ er
16
1-layer PCB, Package LT 1200 A = PC
(RθJA = 180 ºC/W) 78 B
15 1100 ºC , Pa
14 1000 /W ck
13 1-layer PCB, Package UA ) ag
900 1-la e
12 (RθJA = 165 ºC/W) 800 (R yer P LT
11 θJA = CB
165 , Pac
10 700 1-la ºC/ kage
2-layer PCB, Package LT (R y e rP W) UA
9 600 θJA = CB
8 (RθJA = 78 ºC/W) ,
180 Pac
500 ºC/ kage
7 W) LT
6 400
5 300
4 VCC(min) 200
3 100
2 0
20 40 60 80 100 120 140 160 180
20 40 60 80 100 120 140 160 180
TA (ºC) Temperature (°C)
Hysteresis Curves
A3250 A3251
Hysteresis of ΔVOUT Hysteresis of ΔVOUT
Switching Due to ΔB Switching Due to ΔB
V+ V+
VOUT(off) VOUT(off)
Switch to High
Switch to Low
Switch to High
Switch to Low
VOUT
VOUT
VOUT(on)(sat) VOUT(on)(sat)
B+ B+
BOP
BRP
BOP
BRP
BHYS BHYS
Output voltage in relation to impinging magnetic flux density in a south polarity magnetic
field of sufficient strength. Transition through BOP must precede transition through BRP.
Functional Description
Chopper-Stabilized Technique
The Hall circuit is based on a Hall element, a small sheet of signal is separated from the magnetically-induced signal in the
semiconductor material in which a constant bias current flows frequency domain. The offset (and any low-frequency noise)
when a constant voltage source is applied. The output takes the component of the signal can be seen as signal distortion added
form of a voltage measured across the width of the Hall element, after the signal modulation process has taken place. Therefore,
and has negligible value in the absence of a magnetic field. the DC offset is not modulated and remains a low-frequency
When a magnetic field is applied with flux lines at right angles component. Consequently, the signal demodulation process acts
to the current in the Hall element, a small signal voltage directly as a modulation process for the offset, causing the magnetically-
proportional to the strength of the magnetic field occurs at the induced signal to recover its original spectrum at baseband while
output of the Hall element. the DC offset becomes a high-frequency signal. Then, the signal
passes using a low-pass filter, while the modulated DC offset is
This small signal voltage is disproportionally small relative to
suppressed.
the offset produced at the input of the device. This makes it very
difficult to process the signal and maintain an accurate, reliable The advantage of this approach is significant offset reduction,
output over the specified temperature and voltage range. There- which desensitizes the Hall IC against the effects of temperature
fore, it is important to reduce any distortion of the signal that and mechanical stress. The disadvantage is that this technique
could be amplified when the signal is processed. features a demodulator that uses a sample-and-hold block to
Chopper stabilization is a unique approach used to minimize store and recover the signal. This sampling process can slightly
input offset on the Hall IC. This technique removes a key degrade the SNR (signal-to-noise ratio) by producing replicas of
source of output drift due to temperature and mechanical stress, the noise spectrum at the baseband. This degradation is a function
and produces a 3X reduction in offset in comparison to other, of the ratio between the white noise spectrum and the sampling
conventional methods. frequency. The effect of the degradation of the SNR is higher
This offset reduction chopping technique is based on a sig- jitter, also known as signal repeatability. However, the jitter in a
nal modulation-demodulation process. The undesired offset continuous-time device can be 5X that of the A3250/A3251.
Regulator
Sample and
Hold / LPF
Amp
The range of values between BOP(min) and BOP(max) is scaled to Figure 1. Pulse amplitudes and durations
64 increments. The actual change in magnetic flux (G) repre-
sented by each increment is indicated by BRES (see the Operating Additional information on device programming and program-
Characteristics table; however, testing is the only method for ming products is available on www. allegromicro.com. Program-
verifying the resulting BOP). For programming, the 64 incre- ming hardware is available for purchase, and programming
ments are individually identified using 6 data bits, which are software is available free of charge.
physically represented by 6 bitfields in the onboard registers.
By setting these bitfields, the corresponding calibration value is
programmed into the device.
Code Programming. Each bitfield must be individually set. To
Three voltage levels are used in programming the device: a low do so, a pulse sequence must be transmitted for each bitfield that
voltage, VPL , a minimum required to sustain register settings; a is being set to 1. If more than one bitfield is being set to 1, all
mid-level voltage, VPM , used to increment the address counter pulse sequences must be sent, one after the other, without allow-
in the device; and a high voltage, VPH , used to separate sets of ing VCC to fall to zero (which clears the registers).
VPM pulses (when short in duration) and to blow fuses (when
long in duration). A fourth voltage level, essentially 0 V, is used The same pulse sequence is used to provisionally set bitfields as
to clear the registers between pulse sequences. The pulse values is used to permanently set bitfield-level fuses. The only differ-
are shown in the Programming Protocol Characteristics table and ence is that when provisionally setting bitfields, no fuse-blowing
in figure 1. pulse is sent at the end of the pulse sequence.
The pulse sequences consist of the following groups of pulses: vertently setting the bitfield to 1. Instead, blowing the device-
level fuse protects the 0 bitfields from being accidentally set in
1. An enable sequence.
the future.
2. A bitfield address sequence.
3. When permanently setting the bitfield, a long VPH fuse-blow- When provisionally trying the calibration value, one pulse
ing pulse. (Note: Blown bit fuses cannot be reset.) sequence is used, using decimal values. The sequence for setting
the value 510 is shown in figure 2.
4. When permanently setting the bitfield, the level of VCC must
be allowed to drop to zero between each pulse sequence, in When permanently setting values, the bitfields must be set indi-
order to clear all registers. However, when provisionally set- vidually, and 510 must be programmed as binary 101. Bit 3 is
ting bitfields, VCC must be maintained at VPL between pulse set to 1 (0001002, which is 410), then bit 1 is set to 1 (0000012,
sequences, in order to maintain the prior bitfield settings while which is 110). Bit 2 is ignored, and so remains 0.Two pulse
preparing to set additional bitfields. sequences for permanently setting the calibration value 5 are
Bitfields that are not set are evaluated as zeros. The bitfield-level shown in figure 3. The final VPH pulse is maintained for a longer
fuses for 0 value bitfields are never blown. This prevents inad- period, enough to blow the corresponding bitfield-level fuse.
V+
VPH
VPM
VPL
V+
VPH
VPM
VPL
Address
0
VPH
V+
VPH
Address Selection. After addressing mode is enabled, the Address 1
Address 2
target bitfield address, is indicated by a series of VPM pulses, Address n ( ≤ 63)
VPM
as shown in figure 3. When provisionally trying a value, this
sequence is followed by a short VPH pulse, which serves to
VPL
delimit the address and set the corresponding bitfield. When
permanently setting a bitfield, the VPH pulse is continued for a
longer period of time, suffienct to not only set the bitfield to 1, 0
V+
Falling edge of final BOP address digit
VPH
t
Figure 6. Pulse sequence to encode lock bit
Power Derating
The device must be operated below the maximum junction Example: Reliability for VCC at TA = 150°C, package UA, using
temperature of the device, TJ(max). Under certain combinations of minimum-K PCB.
peak conditions, reliable operation may require derating sup- Observe the worst-case ratings for the device, specifically:
plied power or improving the heat dissipation properties of the RJA = 165°C/W, TJ(max) = 165°C, VCC(max) = 24 V, and
application. This section presents a procedure for correlating ICC(max) = 10 mA.
factors affecting operating TJ. (Thermal data is also available on
the Allegro MicroSystems Web site.) Calculate the maximum allowable power level, PD(max). First,
invert equation 3:
The Package Thermal Resistance, RJA, is a figure of merit sum-
marizing the ability of the application and the device to dissipate Tmax = TJ(max) – TA = 165 °C – 150 °C = 15 °C
heat from the junction (die), through all paths to the ambient air. This provides the allowable increase to TJ resulting from internal
Its primary component is the Effective Thermal Conductivity, power dissipation. Then, invert equation 2:
K, of the printed circuit board, including adjacent devices and
traces. Radiation from the die through the device case, RJC, is PD(max) = Tmax ÷ RJA = 15°C ÷ 165 °C/W = 91 mW
relatively small component of RJA. Ambient air temperature,
TA, and air motion are significant external factors, damped by Finally, invert equation 1 with respect to voltage:
overmolding.
VCC(est) = PD(max) ÷ ICC(max) = 91 mW ÷ 10 mA = 9 V
The effect of varying power levels (Power Dissipation, PD), can
The result indicates that, at TA, the application and device can
be estimated. The following formulas represent the fundamental
dissipate adequate amounts of heat at voltages ≤VCC(est).
relationships used to estimate TJ, at PD.
Compare VCC(est) to VCC(max). If VCC(est) ≤ VCC(max), then reli-
PD = VIN × IIN (1) able operation between VCC(est) and VCC(max) requires enhanced
RJA. If VCC(est) ≥ VCC(max), then operation between VCC(est) and
T = PD × RJA (2) VCC(max) is reliable under these conditions.
TJ = TA + ΔT (3)
PD = VCC × ICC = 12 V × 4 mA = 48 mW
4.50±0.10
+0.10
1.73 –0.11
2.50
A 2.00
2.24
0.80
+0.20
1.00 –0.11
1.00
1 2 3 +0.04
0.40 –0.05
0.70 1.50
1.50±0.10 B PCB Layout Reference View
Basic pads for low-stress, not self-aligning
Additional pad for low-stress, self-aligning
0.42±0.06 Additional area for IPC reference layout
0.50±0.06
2X 1.50 BSC
For Reference Only; not for tooling use (reference JEDEC. TO-243AA)
Dimensions in millimeters NNT
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A Active Area Depth, 0.78 mm REF 1
B Reference land pattern layout (reference IPC7351 SOT89N); C Standard Branding Reference View
All pads a minimum of 0.20 mm from all adjacent pads; = Supplier emblem
adjust as necessary to meet application process N = Last two digits of device part number
requirements and PCB layout tolerances T = Temperature code
C Branding scale and appearance at supplier discretion
D Hall element, not to scale
+0.08
4.09 –0.05
45°
B
C
E
2.06
1.52 ±0.05
1.45 E
Mold Ejector
+0.08 Pin Indent NNT
3.02 –0.05
E
Branded 45°
Face 1
2.16 D Standard Branding Reference View
MAX
= Supplier emblem
0.79 REF N = Last two digits of device part number
A T = Temperature code
0.51
REF
1 2 3