EELE-3313 Final Exam – Group B

For students whose student numbers have right end digit 3, or 4, or 5, or 6, or 7.

Q–1
12 Marks
A p-n junction having threshold energy 1.5 eV is given. Please:
A. Consider that this p-n junction is biased in reverse and the biasing voltage is V=5 V. Find
the height of the threshold.
B. Consider that this p-n junction is biased forward and calculate both the density of electron
diffusion current jndif. and the density of the hole diffusion current jpdif. if the corresponding diffusion
coefficients are Dn = 20 (units) and Dp = 10 (units), and the functions of the electron concentration
and of the hole concentration are respectively (x is the coordinate in the directions of both
currents):

n(x) = 20x + 100, Å-1

p(x) = -10x + 80, Å-1

(Please consider the electron charge q = 1 (in electron unit) for the calculations above.)

Q–2

12 Marks
Semiconductor having energy band gap Eg = 2 eV and electron work function φ = 5 eV is given.
This electron work function pertains to semiconductor that doesn’t have ionized impurity atoms.
Please:
a) Consider that this semiconductor has ionized donor impurity atoms that gives electron
work function φn = 4.5 eV at room temperature (T = 3000K) and the donor ionization energy is 0.2
eV. Find the probability that the donor level to be occupied by electron at room temperature (T =
3000K). Draw the corresponding graphs.
b) Consider that this semiconductor has ionized acceptor impurity atoms that gives electron
work function φp = 5.5 eV at room temperature (T = 3000K) and the acceptor ionization energy is
0.2 eV. Find the probability that the acceptor level to be occupied by electron at room temperature
(T = 3000K). Draw the corresponding graphs.

(Consider the Boltzmann constant k = 8.617 × 10-5 eV.K-1.)

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Q–3

12 Marks

Please describe the operation of the semiconductor light emitting diode (LED). Please give the
following:
i) Energy band diagram corresponding to the optical medium of LED formed
in the p-n junction. Explain the requirements about positions of the quasi-Fermi levels in an optical
medium of the LED.
ii) Define both direct energy band gap semiconductor and indirect energy
band gap semiconductor and give the corresponding electron band structures. Explain which type
of semiconductor can be used for design of LED.

iii) Use the knowledge about spontaneous optical radiation and explain
the forming of the direction of the optical radiation of the LED.

Q–4
12 Marks
A. Electron propagates in one dimensional quantum well, which has walls having infinity
heights. The potential energy corresponding to the bottom of the well is 0 eV and the length of
the well is 5 Å. Consider the Plank’s constant is ħ = 4.135667696×10−15 eV⋅s (the energy will be
in electron-volts (eV)) and the electron mass is m = 9.1093837015×10−31kg and find the following
for the first electron energy level in the well:
i) The electron wave length;
ii) The electron momentum;
iii) The electron energy.
B. One dimensional and time independent Schrödinger equation is given. The function of the
potential energy is V0 = 20 eV = const. and the electron energy is E > 20 eV. Please:
i) Write this Schrödinger equation;
ii) Find the common solution of this equation if the Plank’s constant is ħ =
4.135667696×10−15 eV⋅s and the electron mass is m = 9.1093837015×10−31kg.

Q–5
12 Marks
Consider a diatomic molecule A–B that is built by two different sorts of atoms A and B (A≠B).
Also consider that the energies of the valence electrons are εsA = -14 eV and εsB = -16 eV for the
isolated atoms A and B respectively, and the covalent energy of interaction between the electrons
in the molecule A–B is 3 eV. Please:

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a) Derive the expressions about the energies belonging to both the bonding state and the
antibonding state of the molecule A–B;
b) Use the result from a) and the provided numerical values above and find the numerical
values of both the energy of the bonding state and the energy of the antibonding state.
Find the energy interval between both states. Draw the energy band diagram.