African Centre for National Advanced School of

Advanced Studies Engineering, UYI

ELECTRIC AND ELECTRONIC CIRCUITS

PHY 225

Dr. DIDIER BELOBO BELOBO

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors
Overview
Introduction
Bipolar junction transistors, transistor effect,
characteristics; polarization, operating point, temperature
stabilization
Field effect transistor
Junction field effect transistor
Insulated gate field effect transistor
Textbooks: Electronics principles 8th edition by A. Malvino and D. Bates MacGraw-Hill
Education, New York, 2016; Introduction à l’électronique analogique Cours et exercices corrigés
de Tahar Neffati, Dunod, Paris 2008
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors I: BJTs
Introduction
December 23 afternoon at Bell Telephone Laboratories,
1947, Walter H. Brattain and John Bardeen and William
Schockley demonstrated the amplifying action of the
first transistor
In 1951, William B. Schockley invented the first junction
transistor, a semiconductor device that can amplify
(enlarge) electronic signals such as radio and television
signals
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors I: BJTs
Introduction

Fig. 1 First
transistor

1956, physics Nobel prize received by Brattain, Bardeen

Schockley for ‘their research on semiconductors and the
discovery of the transistor effect’
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors
Introduction
Applications of transistors
Current regulation Swiching signals

Amplification of in Ics are found

an input signal everywhere
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistor: BJTs
A BJT: semiconductor doped to obtain a series of two
opposite junctions. 2 types exist: NPN and PNP
NPN BJT PNP BJT

NPN BJT PNP BJT

symbol Fig. 2 symbol
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
Unbias transistor base much thinner
collector Fig. 3
than collector and
intermediate emmiter regions
doping
.
base
lightly doped

emmiter
heavily doped Fig. 4
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
bias transistor
Fig. 5 : forward biases
emmiter diode
: reverse biases
collector diode

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
bias transistor
Emmiter role: injects its free into the base
Base role: pass emmiter-injected on to the collector
Collector role: collects most of all free from the base

Free from emmiter diffuse to the base, few recombine

with holes, most cross the base as the latter width is
small, free in collector feel the attraction of , flow
through the collector and enter the circuit
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT currents
Fig. 6
solid line arrows: current flows
dashed line arrows: flows

: collector current
: base current
: emmiter current
NPN BJT PNP BJT
Fig. 7
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT currents
Kirchoff law: Eq.(1)
: proportion of free injected from emmiter that
arrive to the collector, typically . .
Eq.(2)

Eq.(3)
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT currents
Eq.(4) is very large as tends to 1

Transistor Eq.(5)
effect
Eq.(5) means that from a small base current, one
obtains an amplified collector current, a
phenomenon known as the transistor effect
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT currents
Examples:

1) A transistor has a collector current of 10 mA and a

base current of 40 μA. What is the current gain of the
transistor?
2) A transistor has a current gain of 175. If the base
current is 0.1 mA, what is the collector current?
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
3 ways to connect a transistor: (a) CE (common
emitter), (b) CC (common collector), or (c) CB (common
base)
Common here is understood as connection to the
common or ground of each source voltage
We focus on CE connection that is widely used

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Emmiter connected to ground
Fig. 8 of each source voltage

Left loop referred to as input

right loop referred to as output

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Notations
Double subscripts: same subscripts mean source voltage:
base voltage source, collector voltage source;
different subscript mean voltage between 2 points:
voltage between base and emmiter
single subscripts mean node voltage or voltage between
the subscripted point and the ground:

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Base characteristics Emmiter diode, same current
vs voltage curve, choose
Fig. 9 approximation level

Fig. 10

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Base characteristics
Eq.(6)
example

Use the second approximation to calculate the base

current in Fig. 9. What is the voltage across the base
resistor, the collector current if =200?

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
collector characteristics
small increase of , sharp increase of up
Fig. 11 to a stable value of 1 mA
= a few tens of 1 V-40 V,
=constant= 1 mA

, collector not reverse bias,

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
collector characteristics
40 V, collector breaks down, transistor effect lost
Constant region in Fig. 10 means further increase of
cannot increase as it is due only to free from the
base
Collector voltage: Eq.(7)
Power dissipation: Eq.(8)
Power dissipation heats up the transistor, may damage it
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
collector characteristics
Regions of operation
Active region: constant, transistor in normal operation
Saturation region: early rising part of the curve, is
insufficient to collect all free from the base,
Breakdown region: almost vertical part of curve,
transistor gets damage in this region
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
collector characteristics
Regions of operation
Fig. 12
Cutoff region: ,
due to minority carriers and
surface leakage current, is
very small orders of 50 nA

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
collector characteristics
Example: what Fig. 13
are , ,
and ?

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Transistor approximations

Fig. 14 Fig. 15

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Transistor approximations
Example: what
Fig. 16
is ? Use the
ideal and
second degrees
approximations

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Load line: base bias case, i.e., base current fixed
Fig. 17
Eq.(9)

Load line contains all

possible operating points
of the transistor

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Load line: base bias case, i.e., base current fixed
Fig. 17 saturation point: intersection
between load line and
saturation region of collector
curves, .

Eq.(10)

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Load line: base bias case, i.e., base current fixed
Fig. 18 operating point Q: intersection
between load line and )
curve , )
)

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Recognize saturation

1.Assume transistor operating in active region.

2. Carry out the calculations for currents and voltages.
3. If an impossible result occurs in any calculation, the
assumption is false.

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Recognize saturation example
Fig. 19 a) Compute and , conclude
b) Compute and ,
conclude

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused NPN BJTs
BJT characteristics
Fig. 20

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Introduction
Field effect transistor (FET): unipolar device as current is
due only to one type of charge carriers ( or holes)
Advantages of FETs over BJTs
high input impedance voltage controlled device
high degree of isolation less noisy effect
between input and output
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Introduction
Types of FETs

(a) Junction FET (b) Metal oxide semiconductor

(JFET) FET (MOSFET)

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
JFET: four-terminal device, terminal names: drain, gate,
source, and body always connected to the source
Types of JFET
Fig. 21 N-channel JFET Fig. 22 P-channel JFET

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
Construction of JFET Fig. 24 N-channel JFET
P-regions internally connected
to get one gate lead

term ‘field effet’ related to

the presence of two depletion
layers
source charge carriers are
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
Construction of JFET Fig. 25 P-channel JFET
charge carriers are holes

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
working of JFET Fig. 26 Normal biasing a N-JFET
gate-source diode always reverse
bias, gate current A,
input resistance almost infinite
flowing from source to drain
must pass through narrow
channel between the depletion
layers.
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
working of JFET
Fig. 27 !! , "#$%%, , small
drain current as attracted to
drain

depletion layers expands deeper

into the N region especially in
near drain
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
working of JFET const, application of negative
Fig. 28 !!
&' , free holes in P regions
acttracted by negative voltage & ,
depletion layers widen and go
deeper into the N region
decreasing &' ( , depletion
layers expand, conducting flow
through a narrower channel
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
working of JFET drain current intensity )! reduces with
Fig. 28
more negative & , &* controls
output current )! , JFET is a voltage
controlled device
further decrease of & , depletion layers
touch, drain current stops, )! +
drain current is maximum for & ,
)! )! #$,
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
characteristic of JFET: drain curve
Fig. 29 )!'' : maximum drain
current for shorted
gate &'
- : pinchoff voltage, at
this point, increasing
!' does not increase
)!
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
characteristic of JFET: drain curve
Fig. 29 !' #$, : breakdown voltage, at this value
and greater one, the device gets damage
Active region: region between
- $./ !' #$,
Ohmic region: region between 0 and -

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
characteristic of JFET: drain curve
-
Ohmique region Ohmic resistance: 0 !' Eq.(11)
!''
JFET behaves like a resistance
active region )! )!'' Eq.(12)
JFET behaves like a current source
Conducting channel is very narrow, depletion layers
almost touch, pinchoff of conductin channel and
exclude any further increase of )!
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
characteristic of JFET: cutoff voltage
Fig. 29 )! +, &' -
123455 64%3$78:
&' 455 -
123455 64%3$78:
depletion layers
touch, explains
why drain
current vanishes
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
characteristic of JFET: transconductance curve
&'
)! )!'' : ; Eq.(13) gives transcoductance
&' 455 curve
transcoductance curve passes trough points ()!'' , 0)
and ( , &' 455 )

What is )! when &' &' 455 /;?

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Junction field effect transistor (FET)
characteristic of JFET: transconductance curve
Fig. 30

Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
Metal oxide semiconductor FET (MOSFET)
4-terminal device: drain, gate, source and body, body
always connected to source, only representation of 3
terminal: drain, gate, source
there exist 2 types of MOSFET

enhancement MOSFET depletion MOSFET

(E-MOSFET) (D-MOSFET)
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 Transistors: focused FETs
Construction of (MOSFET): N-channel case
P-type
semiconductor
doped with 2 N-
types that form a
N-channel, gate
isolated from p-
Fig. 31 type by a layer of
silicon dioxide
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B
 Transistors: focused FETs
symbol of (MOSFET):
N-type MOSFET
P-type MOSFET

Fig. 32
Electric and electronic circuits – Phys 225 – National Advanced School of Engineering of Yde – UYI – 2021 D. B B