PD - 94383D

IRGB15B60KD
IRGS15B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF. IC = 15A, TC=100°C
• 10µs Short Circuit Capability.
• Square RBSOA. G
• Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient.
E
n-channel VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

TO-220AB D2Pak TO-262

IRGB15B60KD IRGS15B60KD IRGSL15B60KD
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 15
ICM Pulsed Collector Current 62
ILM Clamped Inductive Load Current „ 62 A
IF @ TC = 25°C Diode Continuous Forward Current 31
IF @ TC = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 64
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 208
W
PD @ TC = 100°C Maximum Power Dissipation 83
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.6
RθJC Junction-to-Case - Diode ––– ––– 2.1
RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount  ––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)‚ ––– ––– 40
Wt Weight ––– 1.44 ––– g

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IRG/B/S/SL15B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 IC = 15A, VGE = 15V 5, 6,7
––– 2.05 2.50 V IC = 15A, VGE = 15V TJ = 125°C 9, 10,11
––– 2.10 2.60 IC = 15A, VGE = 15V TJ = 150°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9, 10,11
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance ––– 10.6 ––– S VCE = 50V, IC = 20A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 5.0 150 µA VGE = 0V, VCE = 600V
––– 500 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.20 1.45 IC = 15A 8
––– 1.20 1.45 V IC = 15A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ.
Max. Units Conditions Ref.Fig.

Qg Total Gate Charge (turn-on) ––– 56 84 IC = 15A

Qge Gate - Emitter Charge (turn-on) ––– 7.010 nC VCC = 400V CT1
Qgc Gate - Collector Charge (turn-on) ––– 26 39 VGE = 15V
Eon Turn-On Switching Loss ––– 220330 µJ IC = 15A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 340455 VGE = 15V,RG = 22Ω, L = 200µH
Etot Total Switching Loss ––– 560785 Ls = 150nH TJ = 25°C ƒ
td(on) Turn-On Delay Time ––– 34 44 IC = 15A, VCC = 400V
tr Rise Time ––– 16 22 VGE = 15V, RG = 22Ω, L = 200µH CT4
td(off) Turn-Off Delay Time ––– 184200 ns Ls = 150nH, T J = 25°C
tf Fall Time ––– 20 26
Eon Turn-On Switching Loss ––– 355470 IC = 15A, VCC = 400V CT4
Eoff Turn-Off Switching Loss ––– 490600 µJ VGE = 15V,RG = 22Ω, L = 200µH 13,15
Etot Total Switching Loss ––– 8351070 Ls = 150nH TJ = 150°C ƒ WF1WF2

td(on) Turn-On Delay Time ––– 34 44 IC = 15A, VCC = 400V 14, 16

tr Rise Time ––– 18 25 VGE = 15V, RG = 22Ω, L = 200µH CT4
td(off) Turn-Off Delay Time ––– 203226 ns Ls = 150nH, T J = 150°C WF1
tf Fall Time ––– 28 36 WF2
Cies Input Capacitance ––– 850––– VGE = 0V
Coes Output Capacitance ––– 75––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 35––– f = 1.0MHz
TJ = 150°C, IC = 62A, Vp =600V 4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
VCC = 500V, VGE = +15V to 0V,RG = 22Ω CT2
µs TJ = 150°C, Vp =600V,RG = 22Ω CT3
SCSOA Short Circuit Safe Operting Area 10 ––– –––
VCC = 360V, VGE = +15V to 0V WF4
17,18,19
Erec Reverse Recovery energy of the diode ––– 540 720 µJ TJ = 150°C
trr Diode Reverse Recovery time ––– 92 111 ns VCC = 400V, IF = 15A, L = 200µH 20,21
Irr Diode Peak Reverse Recovery Current ––– 29 33 A VGE = 15V,RG = 22Ω, Ls = 150nH CT4,WF3

Note  to „ are on page 15

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 IRG/B/S/SL15B60KD

35 240

30
200

25
160
20

Ptot (W)
IC (A)

120
15
80
10
8

5 40

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

100 100

10 µs
10 10
IC (A)

IC A)

100 µs
1 1
1ms
DC

0.1 0
1 10 100 1000 10000 10 100 1000
VCE (V) VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25°C; TJ ≤ 150°C TJ = 150°C; VGE =15V
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IRG/B/S/SL15B60KD
100 100
90 VGE = 18V 90 VGE = 18V
80 VGE = 15V 80 VGE = 15V
VGE = 12V VGE = 12V
70 VGE = 10V 70 VGE = 10V
VGE = 8.0V VGE = 8.0V
60 60
ICE (A)

ICE (A)
50 50
40 40
30 30
20 20
10 10
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 300µs TJ = 25°C; tp = 300µs

100 60

90 VGE = 18V -40°C

50 25°C
80 VGE = 15V 150°C
VGE = 12V
70 VGE = 10V 40
VGE = 8.0V
60
ICE (A)

IF (A)

50 30

40
20
30
20
10
10
0 0
0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 300µs tp = 80µs
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 IRG/B/S/SL15B60KD
20 20
18 18
16 16
14 14
12 ICE = 5.0A 12 ICE = 5.0A
VCE (V)

VCE (V)
10 ICE = 15A 10 ICE = 15A
ICE = 30A ICE = 30A
8 8
6 6
4 4
2 2
0 0
4 6 8 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

20 160

18 140 T J = 25°C
16 T J = 150°C
120
14
100
12 ICE = 5.0A
VCE (V)

ICE (A)

10 ICE = 15A 80
ICE = 30A
8 60
6
40
4 T J = 150°C
20 T J = 25°C
2
0 0
4 6 8 10 12 14 16 18 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 150°C VCE = 50V; tp = 10µs
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IRG/B/S/SL15B60KD
1800 1000

1600

1400
tdOFF

Swiching Time (ns)

1200
EOFF
Energy (µJ)

1000
EON 100
800

600
tdON
400
tF
200

0 tR
10
0 10 20 30 40 50
0 10 20 30 40 50
IC (A)
IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V RG= 22Ω; VGE= 15V

900 1000
tdOFF
800
EOFF
700
Swiching Time (ns)

600 EON
Energy (µJ)

500
100
400 tdON
300 tR
tF
200

100

0 10
0 50 100 150 0 50 100 150

R G (Ω) R G (Ω)

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 600V
ICE= 15A; VGE= 15V ICE= 15A; VGE= 15V
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 IRG/B/S/SL15B60KD
35 40
RG = 10 Ω
35
30

30
RG = 22 Ω
25
25
IRR (A)

IRR (A)
RG = 47 Ω
20 20
RG = 68 Ω
15
15
RG = 100 Ω
10
10
5

5 0
0 10 20 30 40 50 0 20 40 60 80 100 120
IF (A) RG (Ω)

Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C TJ = 150°C; IF = 15A

35 3000
10Ω 40A
30
22Ω
2500 47Ω 30A
68 Ω
25
2000 100 Ω
15A
Q RR (µC)

20
IRR (A)

1500
15
10A
1000
10
500
5

0
0
0 500 1000 1500
0 500 1000 1500
diF /dt (A/µs)
diF /dt (A/µs)

Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V;TJ = 150°C
ICE= 15A; TJ = 150°C
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IRG/B/S/SL15B60KD
1000

900 10Ω
800

Energy (µJ) 700 22 Ω

600
47 Ω
500
100 Ω
400

300

200

100

0
0 10 20 30 40

IF (A)

Fig. 21 - Typical Diode ERR vs. IF

TJ = 150°C

10000 16

14
300V
12
400V
Cies
Capacitance (pF)

1000 10
VGE (V)

6
100
Coes 4

Cres 2

0
10
0 20 40 60
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
VCE (V)

Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 15A; L = 600µH
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 IRG/B/S/SL15B60KD
1

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
Ri (°C/W) τi (sec)
R1 R2 R3
R1 R2 R3
0.05 τJ τC
τJ τ
0.231 0.000157
τ1 τ2 τ3
0.01 τ1 τ2 τ3 0.175 0.000849
0.02
0.01 Ci= τi/Ri 0.201 0.011943
Ci= i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10
Thermal Response ( Z thJC )

1 D = 0.50

0.20
0.10 R1 R2
R1 R2 Ri (°C/W) τi (sec)
0.1 0.05 τJ τC
τJ τ 1.164 0.000939
τ1 τ2
0.01 τ1 τ2 0.9645 0.035846
0.02
Ci= τi/Ri
Ci= i/Ri
0.01
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRG/B/S/SL15B60KD
L

L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
Driver L

- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC
R=
ICM

DUT VCC
Rg

Fig.C.T.5 - Resistive Load Circuit

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 IRG/B/S/SL15B60KD
600 30 500 50

tF
500 25
400 40

400 20
9 0 % IC E
300 30
90% tes t current
300 15
V CE (V)

V CE (V)
ICE (A)

ICE (A)
5 % IC E
200 20
200 10 tes t current

5% V CE 100 10
tR 10% tes t current
100 5
5% V C E

0 0
0 0
E o ff L o s s Eon Los s

-1 0 0 -5 -100 -10
-0 .5 0 .0 0.5 1.0 1 .5 -0.2 -0.1 0.0 0.1
t (µ S ) t (µS )

WF.1- Typ. Turn-off Loss WF.2- Typ. Turn-on Loss

@ TJ = 150°C using CT.4 @ TJ = 150°C using Fig. CT.4

100 20 500 250

QRR

0 10 400 V CE 200

tR R
-1 0 0 0 300 150

IC E
VCE (V)

VCE (V)
ICE (A)

10 % ICE (A)
-2 0 0 Pe a k -1 0 200 100
IR R
Pe a k
IR R
-3 0 0 -2 0 100 50

-4 0 0 -3 0 0 0

-5 0 0 -4 0 -1 0 0 -5 0
-0 . 0 6 0 .0 4 0 .1 4 -1 0 0 10 20 30
t (µ S ) t (µ S )

WF.3- Typ. Reverse Recovery WF.4- Typ. Short Circuit

@ TJ = 150°C using CT.4 @ TJ = 150°C using CT.3
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IRG/B/S/SL15B60KD
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET
1 - GATE
IGBTs, CoPACK
1 2 3 2 - DRAIN
1- GATE 1- GATE
3 - SOURCE
2- DRAIN 2- COLLECTOR
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPL E : T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB L Y L INE "C" R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

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 IRG/B/S/SL15B60KD
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

T HIS IS AN IR F 530S WIT H PAR T NU MB ER
L OT CODE 8024 INT ER NAT IONAL
AS S EMB LE D ON WW 02, 2000 R ECT IF IER F 530S
IN T HE AS S E MB LY L INE "L " LOGO
DAT E CODE
Note: "P" in as s embly line YE AR 0 = 2000
pos ition indicates "L ead-Free" AS S E MB LY
L OT CODE WEE K 02
L INE L

OR
PAR T NUMB E R
INT E RNAT IONAL
RE CT IF IE R F 530S
LOGO
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
AS S E MB LY PRODUCT (OPT IONAL)
L OT CODE YE AR 0 = 2000
WE E K 02
A = AS S E MB LY S IT E CODE

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IRG/B/S/SL15B60KD
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

E XAMPL E : T HIS IS AN IRL 3103L
L OT CODE 1789 PART NUMB E R
INT E RNAT IONAL
AS S E MB L E D ON WW 19, 1997
RE CT IF IE R
IN T H E AS S E MB L Y L INE "C" L OGO
Note: "P" in as s embly line DAT E CODE
pos ition indicates "L ead-F ree" YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

OR
PART NUMBE R
INT E R NAT IONAL
RE CT IF IE R
L OGO
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
AS S E MB L Y PR ODU CT (OPT IONAL )
L OT CODE YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE

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 IRG/B/S/SL15B60KD
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
 This is only applied to TO-220AB package
‚ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ Energy losses include "tail" and diode reverse recovery.
„ VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.

TO-220 package is not recommended for Surface Mount Application

Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/