PD - 95970A

IRG4BC30FD-SPbF
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH C
HYPERFAST DIODE
VCES = 600V
Features
• Fast: optimized for medium operating frequencies G
VCE(on) typ. = 1.59V
(1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter @VGE = 15V, IC = 17A
E
parameter distribution and higher efficiency than
Generation 3. n-channel
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft
recovery anti-parallel diodes for use in bridge configurations.
• Lead-Free

Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specific application conditions.
• HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no
D2Pak
snubbing.
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's.

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) c 124
ILM Clamped Inductive Load current d 124
IF @ TC = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150 °C
TSTG Storage Temperature Range
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 1.2 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient (PCB Mounted,steady state) g ––– ––– 40
Wt Weight ––– 2.0 (0.07) ––– g (oz.)

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IRG4BC30FD-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage e 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1mA
— 1.59 1.8 IC = 17A VGE = 15V
VCE(on) Collector-to-Emitter Voltage — 1.99 — V IC = 31A See Fig. 2, 5
— 1.7 — IC = 17A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance f 6.1 10 — S VCE = 100V, IC = 17A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IF = 12A See Fig. 13
— 1.3 1.6 IF = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 51 77 IC = 17A
Qge Gate-to-Emitter Charge (turn-on) — 7.9 12 nC VCC = 400V See Fig. 8
Qgc Gate-to-Collector Charge (turn-on) — 19 28 VGE = 15V
td(on) Turn-On delay time — 42 — TJ = 25°C
tr Rise time — 26 — ns IC = 17A, VCC = 480V
td(off) Turn-Off delay time — 230 350 VGE = 15V, RG = 23Ω
tf Fall time — 160 230 Energy losses inlcude "tail" and
Eon Turn-On Switching Loss — 0.63 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 1.39 — mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss — 2.02 3.9
td(on) Turn-On delay time — 42 — TJ = 150°C See Fig. 9,10,11,18
tr Rise time — 27 — ns IC = 17A, VCC = 480V
td(off) Turn-Off delay time — 310 — VGE = 15V, RG = 23Ω
tf Fall time — 310 — Energy losses inlcude "tail" and
Ets Total Switching Loss — 3.2 — mJ diode reverse recovery.
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 1100 — VGE = 0V
Coes Output Capacitance — 74 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 14 — f = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
220 600 TJ = 125°C 16 di/dt 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During tb — 120 — TJ = 125°C 17

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IRG4BC30FD-SPbF

90% Vge
Same type
device as +Vge
D.U.T.

Vce

430µF
80%
of Vce D.U.T. 90% Ic
10% Vce
Ic Ic
5% Ic

td(off) tf

t1+5µS

Fig. 18a - Test Circuit for Measurement of Eoff =

∫t1
Vce
Vce icIcdtdt

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
GATE VOLTAGE D.U.T.
Ic
trr
Qrr =
∫ tx
Ic dtdt
id

10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
Vce
AND CURRENT Vpk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on) tr

∫
t2
VceieIcdt dt
Eon = Vce

∫
t4
t1 Erec = VdVdidIcdt dt
t3
t1 t2 DIODE REVERSE
RECOVERY ENERGY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4BC30FD-SPbF

Vg GATE SIGNAL
DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0 t1 t2

Fig.18e - Macro Waveforms for Figure 18a's Test Circuit

RL = VCC
ICM

L D.U.T.
1000V Vc*

50V 480µF
6000µF 0 - VCC
100V

Pulsed Collector Current

Test Circuit
Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current
Test Circuit

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IRG4BC30FD-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

7+,6,6$1,5)6:,7+ 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5 )6
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/27&2'( :((.
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5(&7,),(5 )6
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$66(0%/< <($5 
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$ $66(0%/<6,7(&2'(

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRG4BC30FD-SPbF

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20).
‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19).
ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.
„Pulse width 5.0µs, single shot.
When mounted on 1" square PCB (FR-4 or G-10 Material).

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2010
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