AP9575GS/P-HF

Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Lower Gate Charge D BVDSS -60V

▼ Simple Drive Requirement RDS(ON) 70mΩ
▼ Fast Switching Characteristic ID -16A
G
▼ RoHS Compliant & Halogen-Free
S

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, GD
ruggedized device design, low on-resistance and cost-effectiveness.
S TO-263(S)

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9575GP) are
available for low-profile applications.

G TO-220(P)
D
S
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage -60 V
VGS Gate-Source Voltage +25 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V -16 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V -10 A
1
IDM Pulsed Drain Current -60 A
PD@TC=25℃ Total Power Dissipation 31.3 W
Linear Derating Factor 0.25 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4.0 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 40 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W

Data and specifications subject to change without notice 1

201007022
AP9575GS/P-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A - - 70 mΩ
VGS=-4.5V, ID=-8A - - 90 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-9A - 14 - S
IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA
o
Drain-Source Leakage Current (T j=125 C) VDS=-48V, VGS=0V - - -250 uA
IGSS Gate-Source Leakage VGS= +25V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=-9A - 14 27 nC
Qgs Gate-Source Charge VDS=-48V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC
2
td(on) Turn-on Delay Time VDS=-30V - 8 - ns
tr Rise Time ID=-9A - 17 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 36 - ns
tf Fall Time RD=3.3Ω - 41 - ns
Ciss Input Capacitance VGS=0V - 1100 2800 pF
Coss Output Capacitance VDS=-25V - 115 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-10A, VGS=0V - - -1.3 V
2
trr Reverse Recovery Time IS=-9A, VGS=0V, - 38 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 61 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9575GS/P-HF

50 40

-10V
o -10V TC=150 C
o
T C =25 C -7.0V
-7.0V -5.0V
40
-5.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

30

-4.5V
-4.5V
30

20

20

10
V G =-3.0V
10
V G =-3.0V

0 0
0 2 4 6 8 10 0 2 4 6 8 10 12 14

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

90 2.0

I D = -10 A
I D = -8 A
1.8 V G = - 10V
T C =25 o C
80 1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

1.4

70 1.2

1.0

60 0.8

0.6

50 0.4
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10.0 1.6

1.4
8.0
Normalized -VGS(th) (V)

1.2

6.0
-IS(A)

1.0

4.0
T j =150 o C T j =25 o C
0.8

2.0
0.6

0.0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9575GS/P-HF

12 10000
f=1.0MHz
I D = -9A
V DS = -48V
-VGS , Gate to Source Voltage (V)

10

8 1000
C iss

C (pF)
6

C oss
4 100
C rss

0 10
0 10 20 30 40 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (R thjc)

Duty factor=0.5

10
100us 0.2
-ID (A)

1ms
0.1
0.1

10ms
0.05
PDM
1 t
100ms 0.02 T
DC
0.01 Duty factor = t/T
o Peak Tj = PDM x Rthjc + T C
T C =25 C
Single Pulse
Single Pulse
0.1 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform