IEEE TRANSACTIONS ON NANOTECHNOLOGY, Volume 19, 2020 769

Analysis of Noise-Immune Dopingless

Heterojunction Bio-TFET Considering
Partial Hybridization Issue
Amit Bhattacharyya , Manash Chanda , Senior Member, IEEE, and Debashis De , Senior Member, IEEE

Abstract—A dielectric modulated (DM) dual-sided dopingless TABLE I

(DL) GaAs0.5 Sb0.5 /In0.53 Ga0.47 As hetero-junction (HJ) Tunnel
FET (DM-DDL-HTFET) based label-free biosensor architecture
having hetero-gate-dielectric (HGD) has been offered. Here, vir-
tual pocket of N+ -category with differing electronic concentration
(Ne ) has been realized through the adjustment of source-sided-
channel length (LSC ) below the gate region. Primarily, the op-
timized structure has been investigated considering energy-band
gap, mole fraction of HJ material and gate-to-source spacer thick-
ness (Lgap,S ). Next, the efficiency of optimized DDL-HTFET model
excluding nano-gap has been juxtaposed with the Si-based TFET
contenders. The effect on Ne , surface potential (ψ), drain-current
(IDS ), and their equivalent sensitivity have been analyzed by the
ATLAS device simulator considering the steric hindrance issues.
37.54% and 54% improvement in threshold voltage sensitivity can
be obtained for DM-DDL-HTFET over single side DL-SiTFET
(DM-SDL-SiTFET) due to variation of oxide layer thickness (Tox )
and source-side dielectric material respectively. Moreover, DM-
DDL-HTFET offers 58.64% (42.18%) and 44.44% (73.33%) in-
ferior minimum noise figure and noise conductance over DM-
SDL-SiTFET at 50 (250) GHz frequency correspondingly after
immobilization of APTES biomolecules.
Index Terms—Label-free biosensing, doping-less, dielectric
modulation, hetero-structure, sensitivity, minimum noise figure.
I. INTRODUCTION
ERFORMANCES of biosensing instrument experience
P serious limitations like sub-threshold swing (superior to
60 mV/decade), Short–channel effects (SCEs), i.e., greater
drain-induced barrier lowering (DIBL), high leakage current
through gate, lesser ON/OFF current fraction (ION /IOFF ) [1],
etc due to incessant miniaturization of the device dimensions
to nano-range. TFET offers lesser sub-threshold swing (SS)
and diminished OFF-state current (IOFF ). However, low ION ,
Manuscript received July 21, 2020; revised September 19, 2020; accepted
October 19, 2020. Date of publication October 26, 2020; date of current version
November 6, 2020. This work was supported by the TEQIP-III/MAKAUT,
WB/2017 project of Maulana Abul Kalam Azad University of Technology, West
Bengal, India. The review of this article was arranged by Associate Editor Dr.
Youfan Hu. (Corresponding author: Debashis De.)
Amit Bhattacharyya is with the Deptartment of ECE, Haldia Institute of
Technology, Haldia 721657, India (e-mail: amit_elec06@yahoo.com).
Manash Chanda is with the Deptartment of ECE, Meghnad Saha Institute of
Technology, Kolkata 700150, India (e-mail: manash.bst@gmail.com).
Debashis De is with the Deptartment of Computer Science Engineering,
Maulana Abul Kalam Azad University of Technology, Kolkata 700064, India
(e-mail: dr.debashis.de@gmail.com).
Digital Object Identifier 10.1109/TNANO.2020.3033966
MATERIAL SPECIFICATIONS FOR SIMULATIONS
ambipolar character and random dopant fluctuations (RDFs)
[2–3] are major limitations of TFET. In TFET, RDF deviates
the turn-on potential, threshold voltage (VTH ) and SS [4]. To
reduce the RDF and composite thermal budgeting, dopingless
(DL) TFETs [5–6] have gained significant attentions. Besides,
DL-TFET offers hindrance beyond sensitivity owing to para-
metric variations [7]. According to the DL conception [5–6],
p+ (n+ ) source (drain) segments in a TFET may be realized
through a metal electrode with suitable work function (φM ) to
deposit charge plasma (CP) nears source (drain) end. Kumar
et al. [5] studied an optimized CP-DL vertical Nanowire-TFET
and realized higher ION of ∼105 A/μm. Even though, Silicon
(Si) supported DL-TFET offers inferior ION caused by excessive
tunneling mass of electron with reduced lateral-electric field (Ex )
within the tunneling area, akin to typical Si-based TFET [6].
Hence, at first proposed DDL-HTFET has been compared with
Si-based TFET (SiTFET). After that, sensitivities and the noise
assessments of the DDL-HTFET biosensor have been analyzed
considering steric hindrance issue.
Fig. 1(a) illustrates the projected DDL-HTFET having
HfO2 /SiO2 HGD structure. Like charge-plasma (CP) approach,
the same φM has been inserted at both the compound semi-
conductors to provide distinct Ne in their particular sections.
This is because of different energy band-gap and affinities of
electrons in two distinct materials [8–9] as depicted in Table I.
Calibration of simulated DDL-HTFET in relation to [10] is
detailed in Fig. 1(b). Outcomes of both works show the exactness
of the proposed model. Hence, the N+ virtual pocket may be
initiated inside the source-sided-channel (SSC) underneath the
gate through choosing the suitable φM ; meantime, Ne and the
thickness of the pocket are altering by LSC . Furthermore, this
pocket structure within DDL-HTFET may be realized excluding
Ion Implantation technique [10] or the dual-metal-gate (DMG),

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 770
Fig. 1. (a) Schematic of proposed DDL-HTFET configuration. (b) Proposed
Model calibration (IDS -VGS curves) with reported records in [10].
recommends simple manufacturing procedure and less thermal
budget [6]. GaAs0.5 Sb0.5 /In0.53 Ga0.47 As, type II super-lattices
(SLs) are developed on an n-category (100) InP substrate via
molecular beam epitaxy (MBE) method [9] and are attrac-
tive compounds for short-wave (mid-wave) infrared i.e., SWIR
(MWIR) photodetectors and light-emitting diodes (LEDs) [9],
[11–12]. Pang et al. [11] concisely evaluated the allotropic
forms of phosphorus, varieties, and features of phosphorene,
along with their promising functions in the field of nonlinear
optics, photonics and photoelectronics as well. Furthermore,
the fundamentals of MXenes correlated through energy stor-
age and adaptation regarding their execution has been initiated
[12] and also mentioned the amazing features of MXenes with
photoelectronic energy modification exertions. Moreover, Cao
et al. [13] proposed a Sb2 S3 /Sb2 Se3 double junction solar cell
configuration and accomplished an efficiency of 26.64%. Owing
to its degree of lattice matching with InP substrate the compound
semiconductors can be a promising hetero-material [8], [14], to
improve ION via reducing the height and width of the barrier. Be-
sides, Liu et al. [15] performed an inclusive simulation analysis
upon the impacts of gate/source overlapping-underlapping and
doping gradient deviation at source for silicon NW-GAA-TFET.
Furthermore, the HGD is utilized to develop the device profi-
ciency. HfO2 recommends superior lateral electric field (Ex ) to
enhance ION , and SiO2 may reduce the ambipolar features.
Hence, specific segment of dielectric film has been en-
graved to realize dielectric modulated DDL-HTFET (DM-DDL-
HTFET) utilized for label free biosensing [1], [16] appliances,
shown in Fig. 2(a). Gao et al. [16] exhibited a graphene (Gr)-FET
based biosensor for specific recognition of miRNA excepting
labeling and functionalization which offered a least recognition
concentration of 10 fM and a recognition time of 20 min.
Plethora of biosensors have been investigated [17–18] without
considering real time issues like steric hindrance issue, i.e.,
non-uniform orientation of bio-analytes in the cavity due to
weak-binding probabilities, features of the surface [19]. So,
the reported sensitivity parameters were not based on practi-
cal scenario. Here, Dwivedi et al. [17] presented a perceptive
investigation on the importance of transconductance-to-current
fraction (gm /Ids ) like a sensing benchmark for DM Bio-TFET.
Kanungo et al. [18] exhibited that a short-gate DM Bio-TFET
(gate length, Lgate = 20 nm) illustrated an advanced sensitivity
over a full-gate Bio-TFET (Lgate = 42 nm). Mahshid et al.
[20] demonstrated a DNA-based electrochemical sensor which
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IEEE TRANSACTIONS ON NANOTECHNOLOGY, Volume 19, 2020
Fig. 2. (a) Cross-sectional view of (a) DM-DDL-HTFET based biosensor.
Nano-gap cavity having Lcavity = 25 nm and Tcavity = 10 nm with (b) de-
creased (c) increased (d) concave (e) convex step orientations of bio-molecules.
(Dimensions exposed are not to the accurate scale).
exploits steric hindrance mechanisms to indicate the existence of
huge macro-molecules in a single-step method. Besides, partial
conjugation of bio-molecules occurs throughout the analysis
[3], [21–22]. In addition, Narang et al. [3] demonstrated a DM
double gate (DG) Bio-TFET considering partial hybridization
and realized ION /IOFF ∼1010 for k = 10. Wangkheirakpam et al.
[21] proposed a DM n+ -pocket doped vertical Bio-TFET assum-
ing steric hindrance and probe positioning issues and achieved
sensitivity of ∼106 for k = 12. The proposal of a dual-pocket
vertical hetero-structure Bio-TFET assuming steric hindrance
study detailed in our earlier work [22] illustrated the sensitivity
variation due to cavity filling factor, doping and dimension of
the pockets.
However, proper gate engineering is required to enhance the
device functionality and sensitivity. Besides, the CP concept
should be incorporated to reduce the fabrication complexity and
RDF [2–6]. Moreover, due to RDF, VTH fluctuates; imposes
limitation on the device reliability. Hence, we have incorporated
CP concept to reduce RDF and improve reliability of the device.
Also, HGD enhances the device functionality in the proposed
Bio-TFET structure. Consequently, in simulations, several ir-
regular step orientations akin to decreased, increased, concave
and convex [3], [21–22] are presumed inside the nano-gap as
displayed in Fig. 2(b–e).
II. DEVICE DESCRIPTION AND SIMULATION APPROACH
Schematic of the projected DM-DDL-HTFET based biosen-
sor along with non-uniform orientations of bio-analytes have
been implied by succeeding the International Technology
Roadmap for Semiconductors [23] and is detailed in Fig. 2(a–
e). To setup N+ (P+ ) CP within drain (source) region, a Hafnium
plate with φM = 3.9 eV (Platinum with φM = 5.93 eV)
is preferred [6]. Furthermore, the substrate thickness (Ts ) of
heterostructure must be lesser over the length of Debye, i.e.,
((εS VT )/(qη i ))1/2 , where VT , εS , and η i indicate thermal voltage,
permittivity and carrier concentration of InP substrate corre-
spondingly [10]. Commencement of BTBT is interrupted owing
to the impact of field induced quantum confinement. Hence,
e- - tunneling possibility as well as SS will also be influenced
because of quantum mechanical effect (QME) [24]. Here, the
 BHATTACHARYYA et al.: ANALYSIS OF NOISE-IMMUNE DOPINGLESS HETEROJUNCTION BIO-TFET 771

QME is ignored as Ts = 10 nm [6]. The structural parameters of

proposed biosensor, shown in Fig. 2(a) comprises cavity length
(Lcavity ) = 25 nm, cavity thickness (Tcavity ) = 10 nm [19], gate
region extent (Lgate ) = 50 nm, LSC = 20 nm, work function
of metal gate (φM ) = 4.4 eV [6], extent of source/drain region
(LS /LD ) = 97 nm, extent of HfO2 below gate = 25 nm, extent
of gate/source (Lgap,S ) and gate/drain (Lgap,D ) spacer = 3 nm,
15 nm. These dimensions ought to be advantageous for lesser
ambipolar features [6], [10]. The thickness of HGD beneath the
source/gate/drain sections of projected Bio-FET are considered Fig. 3. Assessment of irregular step orientation of APTES bio-analyte within
the nano-gap in terms of (a) ΔION (b) ΔSS at VDS = 0.7 V. Here 1: Decreased,
as 11 nm/11 nm/10.3 nm, different from DM-DDL-SiTFET 2: Concave, 3: Convex, 4: Increased step orientation of proposed Bio-TFET.
and dielectric modulated single side doping-less SiTFET, i.e.,
DM-SDL-SiTFET (0.5 nm/3 nm /3 nm) to avert the leakage
current via the contacts of metal-insulator-semiconductor [6].
the bio-analytes are immobilized with the device afterward it
The projected DM-DDL-HTFET based biosensor consists of
is dried out via a blower [28]. Following the immobilization
GaAs0.5 Sb0.5 along with In0.53 Ga0.47 As likely source and drain
procedure bio-analytes can’t propagate within the nano-gap as
segments, correspondingly. Table I shows material parameters
they are attached inside the nano-gap of the device [28].
studied for simulations of the configuration [8–9]. Jin et al.
For decreased step arrangement, bio-analytes will be gathered
[9] specified the material development process for proposed
nearer to the source-channel tunneling intersection [3], [21], [22]
DM-DDL-HTFET. Moreover, a thin SiO2 film of 1 nm thick
as exposed in Fig. 2(b). Therefore, as soon as the bio-analytes
is preferred inside the nano-gap to evade gate-to-channel leak-
with k > 1 are immobilized close to source-channel tunneling
age as well as serves as an adhesive layer to immobilize the
intersection then coupling among gate and channel region will
bioanalytes [3], [18]. A dry atmosphere has been presumed in
improve. Consequently, the tunneling possibility will progress
the sensing procedure [21].
and considerable deviation on ION and SS will be achieved. In
Device simulations have been succeeded through 2D Silvaco
short, superior sensitivity will be viewed in case of decreasing
ATLAS numerical simulator [25]. Every horizontal profile is set
step orientation. In Fig. 2(c–e), bio-analytes are accumulated
up at a depth of 1 nm from the semiconductor/insulator inter-
far from the source-channel intersections, which may diminish
section. A BTBT modeling is favored to work out generation
the gate coupling and hence tunneling rate. Consequently, in
possibility near tunneling intersection. Besides, drift-diffusion,
these step arrangements inferior sensitivities have been exam-
the Fermi-Dirac statistics, recombination-generation modeling
ined. Fig. 3(a–b) demonstrate the deviation in ION (ΔION )
of Shockley-Read-Hall (SRH), Lombardi (CVT) model, con-
and SS (ΔSS) for different irregular step arrangements when
centration and field dependent mobility models, i.e., CONMOB
APTES is stored inside the nano-gap of proposed biosensor.
and FLDMOB have been considered through simulation. Here,
Here Sub- threshold slope (SS) [10] is stated as SS (mV/decade)
APTES (3-aminopropyl-triethoxysilane, permittivity, k = 3.57)
= (dVGS /dlogIDS ). Hence, improved outcome and sensitivity
with Biotins (k = 2.63) may be utilized similar to linkers with
have been realized in decrease orientation in assessment with
bio-receptors element to capture Streptavidin (k = 2.1) as bio-
other nonlinear arrangements [3], [21], [22]. This decreased ar-
targets [17] where k = 1 signifies empty cavity. The complete
rangement is assumed all through the section of this manuscript.
process for the biosensing technique is précised in [26].
Carrier localization [29] and point imperfection [30] can af-
Charged bio-analytes like non-hybridized single strand DNA
fect the optical characteristics of GaAs0.5 Sb0.5 /In0.53 Ga0.47 As
has the distinctiveness, regarding the charge density (Nf ) and
mainly. However, overlapping of bulk and interfacial deep levels
k both [27]. Possibilities of charged bio-analytes inside the
grown by MBE, can cause the generation-recombination (G-R)
nano-gap is included in our simulation by assuming the fixed
based dark current [31] due to traps in the depletion region and
oxide interface trapped charges (ITCs) with Nf = 0/m2 , ±5
is expressed as,
× 1015 /m2 at Air-oxide intersection [3]. The occurrence of  
−qV/2K T
negatively charged biomolecules within the nano-gap outcomes IG−R = qni AW(τe )−1 1 − eB (1)
an improvement in the flat-band voltage by qNf /C, which
reduces the surface potential as well as body-center potential of where q, ni , A, W, τ e , V, KB , T signify electronic charge, intrinsic
the nano-gap [17]. Similar concept has been utilized to model carrier concentration, sample area, depletion width, effective
ITCs exist at oxide/semiconductor intersection in conventional carrier lifetime, applied voltage, Boltzmann constant and room
MOSFETs. The simulation has been accomplished related with temperature respectively. When doping density (ND ) increases
the values of charge described for non-hybridized single strand then τ e decreases and consequently IG-R rises near the middle
DNA [27], a negatively charged bio-analyte. For all bio-analytes, of the bandgap. Moreover, G-R noise and random telegraphic
we assume the width < 2 nm and the length < 5 nm (the thickness noise (RTN) [32] which arise normally from deep levels can
of DNA ≈ 2 nm and length ≈ 3.4 nm [28]). So, bio-analytes be superimposed on flicker noise (1/f). As a result, the noise
can be simply accommodated within the nano-gap having level in heterojunction device appears as lorentzian peaks likely
thickness about 10 nm [19]. When proposed model is immersed noise spectral density which can be raised by several orders of
within the bio-analytes suspension for nearly 4-6 hours then magnitudes and also can degrade the SNR of the Bio-FETs.

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 772
Fig. 4 (a) ION versus Lgap,S of the projected hetero-junction configuration.
(b) Assessment of energy band contours in ON-state (VDS = 0.7 V, VGS = 1.2
V). Now structures 1: LSC of 0, 2: LSC of 5 nm, 3: LSC of 10 nm, 4: LSC of
15 nm, 5: LSC of 20 nm, 6: DDL Si-based, 7: SDL Si-based will be used for the
same configuration in the next figure.
III. DEVICE OPTIMIZATIONS
To optimize the proposed biosensor, the effect of the Lgap,S ,
energy-band for LSC variation and molar fraction variation (x
as well as y component) of both compound semiconductors
are of major considerations. It is examined that the ION may
be progressed extensively while Lgap,S diminishes as Lgap,S
regulates the tunneling rate and accordingly ION . Thus, it has to
be adjusted precisely. Fig. 4(a) reveals the variation of ION along
with Lgap,S for the projected biosensor exclusive of a nano-gap.
It has examined that while Lgap,S is progressed commencing 3
nm towards 9 nm, ION reduces. Development of Lgap,S : 1) Di-
minishes the source/channel intersectional gradient abruptness
and thus extended the tunneling width as well. 2) Reallocates
the source-to-channel carrier transport pathway distant from gate
field diminishing tunneling efficacy [10]. If Lgap,S < 3 nm, then
the capacitive loading due to inner fringing field will be large at
the source end [6], [10]. So, BTBT will be affected. Besides, it
is technologically challenging to reduce the Lgap,S < 3 nm [33].
Hence, Lgap,S = 3 nm offers best possible results.
With the rise in LSC , band diagram of DM-DDL-HTFET
may be adjusted via pocket of N+ -type having the change of
concentration as well as thickness so that Ex enhances, offers
a developed ION . Even though, this phenomenon does not take
place in the Si-supported contenders. Fig. 4(b) details the energy-
band profiles of proposed and Si-based contenders in ON-state
situation (VDS = 0.7V, VGS = 1.2 V). Shortly, SST (SDT)
signifies electron tunneling commencing the valence band of
the source section towards the conduction band of source-area
(drain-area) of the channel, i.e., SAC-CB (DAC-CB). Relative
inspection of different factors for GaAs1-x Sbx /In1-y Gay As
DDL-HTFET has been detailed in Table I. As the bandgap (Eg )
of In0.53 Ga0.47 As is less compared to GaAs0.5 Sb0.5 thus, SDT
plays an important function in the transport phenomenon. While
LSC = 0, SDT controls ION because throughout SST, carriers are
detained inside the triangular-shaped potential well. Once LSC
> 0 nm, SST in addition to SDT exist inside the configuration.
Improving of tunneling zone can progress tunneling possibility
(PTun ) [6] and consequently, ION improves. From Fig. 4(b),
this is cleared that this lateral tunneling extent relating to SDT
(LSDT ) improves by LSC . While LSC is higher than 20 nm, drop
of PTun convinced through SDT commences to be larger above
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IEEE TRANSACTIONS ON NANOTECHNOLOGY, Volume 19, 2020
TABLE II
RELATIVE INSPECTION OF DIFFERENT FACTORS FOR GAAS1-X SBX
/IN1-Y GAY AS DDL-HTFET
TABLE III
ASSESSMENT WITH EXISTING TFET CONFIGURATIONS
the increase of PTun controlled via SST. Hence, ION reduces.
Thus, LSC of 20 nm offers the optimal ION . In the Fig. 4(b) the
position of 0.1μm is the source-channel interface.
A perfect lattice-matched GaAs1-x Sbx /In1-y Gay As hetero
structure must be selected to facilitate the abrupt regulation from
arsenide to antimonide intersection [8]. Table II emphasizes
an evaluation of ION /IOFF and SSavg among molar fraction of
hetero structure, i.e., x = 0.5 and y = 0.47 (Effectual energy-gap,
EB = 0.5 eV), x = 0.65 and y = 0.3 (EB of 0.25 eV) [34]
along with x = 0.82 and y = 0.1 (EB of 0.04 eV) [34] with
LSC of 20 nm at VDS = 0.7 V. Actually, ION shows a highest
enhancement of 4 × 103 % for EB of 0.04 eV over EB = 0.5 eV
by improving antimonide along with reduction of gallium mole
fraction in GaAs1-x Sbx /In1-y Gay As. This diminishes height
and width of the barrier during carrier transport from source
to channel section. Moreover, Table II illustrates that when
y-component of Ga reduces, IOFF improves caused by the lower
tunneling hindrance between drain-channel sections following
the reduction of ON/OFF current fraction. Though diminishing
of EB enhances ION , it also offers better IOFF . It also reduces
the leakage power consumption. For realistic configurations, the
defects in the In0.53 Ga0.47 As-Oxide interface will deteriorate
the device presentation. To minimize this effect, we have sim-
ulated the structure with interface-trap charge density, Dit = 2
× 1012 eV−1 cm−2 through the trap assisted tunneling (TAT)
paradigm [14]. Moreover, Source-channel interface tunneling is
a significant incident in the TFET; hence, a relatively denser
meshing has been considered at the source-channel junction [5].
Possibilities of existence of interface states at HfO2 /SiO2 junc-
tion [35], metal/semiconductor junctions have been included in
our simulations by assuming the interface trapped charge (ITCs)
paradigm. However, the effect of interface states at the junction
of two insulators can be neglected in most of the cases. So, to
achieve optimal presentation, GaAs0.5 Sb0.5 /In0.53 Ga0.47 As HJ
is regarded as all through our work.
Table III illustrates an assessment of device performances
likely, VTH , SS, ION , utmost electric field (Emax ) and highest
 BHATTACHARYYA et al.: ANALYSIS OF NOISE-IMMUNE DOPINGLESS HETEROJUNCTION BIO-TFET
Fig. 5. (a) Assessment of electron concentration (Ne ) contours in ON-state
(VDS = 0.7 V, VGS = 1.2 V) with position along the channel among hetero-
junction and Si-based Bio-TFET in presence of APTES as linkers. The structural
descriptions regarding 1-7 have mentioned in Fig. 4. (b) Evaluation of sensitivity
(SVTH and SION ) with variation of N+ -pocket length (Lpocket ) for proposed
Bio-TFET at VDS = 0.7 V in presence of APTES.
tunneling rate of Si-based TFET devices with the projected
model (given in Fig. 1(a)). Here the projected model outperforms
the other TFET competitors.
IV. PERFORMANCE ANALYSIS CONSIDERING IRREGULARITY
Here, the wide relevancy of streptavidin leads it a useful
linking component in nano-engineering operations [26]. The
comprehensive procedure on behalf of biosensing system is
summarized in [26] that permit bioanalytes to penetrate into
the nano-cavity. Hence, Nf = ± 5 × 1011 /cm2 are considered as
charged bioanalytes present inside the cavity.
A. Impact of Variation of LSC on Ne and Sensitivity
An enhancement of ION of DM-DDL-HTFET biosensor
mostly dependent on the energy-band variation of the source-
sided channel (SC) which has been realized with the N+ -pocket.
A gate electrode with proper φm ( = 4.4 eV) can initiate a virtual
pocket of N+ -type possessing length almost identical to LSC
under the gate of the proposed biosensor. Fig. 5 (a) demonstrates
the evaluation of Ne -contour at VDS = 0.7 V, VGS = 1.2V by
correlating the proposed biosensor with its contender in presence
of APTES. In the ON-condition, Ne inside the virtual pocket of
N+ -type increases progressively along LSC and, accomplishes
a steady-state level of 6.2 × 1018 /cm3 around LSC = 20 nm.
This phenomenon does not ensue in the Si-based biosensors.
Fig. 5(b) demonstrates the analysis of SVTH (sensitivity re-
lated to VTH ) and SION (sensitivity related to ION ) due to the
variation of LSC . Hence, SVTH = (VTH air -VTH bio )/VTH air and
SION = (ION air -ION bio )/ION air subsequently, where VTH x (ION x )
specify VTH (ION ) when nanocavity is full of x ( = air or bioan-
alytes). The thickness of the N+ -pocket is altering by LSC . This
LSC is equivalent to N+ -pocket length, denoted as Lpocket . As
Lpocket increases, source-to-channel tunneling width diminishes
and subsequently VTH (ION ) decreases (enhances). Hence, an
utmost advancement of SVTH (SION ) by 70.3% (2.05 × 102 %)
for DM-DDL-HTFET with Lpocket = 20 nm over Lpocket = 0
nm has been obtained. This is because of increment in ION due
to advanced Ex . Hence, large Lpocket is favorable. Lpocket =
20 nm is kept throughout the comparative analysis to achieve
optimal performance.
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773
Fig. 6. Assessment of surface potential [(a) & (b)] and surface potential
sensitivity (Sψ ) [(c) & (d)] with position along the channel in the OFF-state (VDS
= 0.7 V, VGS = 0 V) for variation of neutral bioanalytes and charged bioanalytes
(APTES as linkers) with an irregular arrangement for DM-DDL-HTFET based
biosensor with LSC = 20 nm.
B. Impact on Surface Potential (ψ) and ψ Sensitivity (Sψ )
Variation of ψ under OFF state (VDS = 0.7 V, VGS = 0 V)
is discussed here considering Lcavity = 25 nm. For electrolytes
having low ionic concentrations, biosensor responds with better
charge sensitivity in sub-threshold regime [36]. Besides, higher
signal-to-noise ratio (SNR) also can be achieved because of
the significant reduction of conductance noise [36]. In the sub-
threshold regime, a change in ψ (Δψ) is very much important
for few biosensing applications.
i) Effect of neutral biomolecules: While bio-analytes present
inside nano-cavity, k enhances [3] and gate capacitance im-
proves. So, the barrier width diminishes at source–channel junc-
tion. This directs to an increase in ψ inside the cavity area.
So, Δψ is observed prominently as shown in Fig. 6(a).
ii) Effect of charged biomolecules: Fig. 6(b) illustrates that
when +ve (-ve) charged bioanalytes (± 5 × 1011 /cm2 ) are
taken with neutral bio-analytes, then barrier width diminishes
(extends) as +ve (-ve) charged bioanalytes generate electrons
(holes) within channel area. Thus, with an increase (decrease)
in –ve(+ve) charge in the cavity, source-channel barrier height
increases (decreases), that result in a reduction of ψ [18].
iii) Analysis on surface potential sensitivity (Sψ ): In this
section, the electrostatics of tunneling intersection has been
analyzed by surface potential sensitivity, Sψ ( = (ψ bio - ψ air )/
ψ air ), where ψ bio and ψ air signifies surface potentials for filled
and empty cavity, correspondingly. Fig. 6(c–d) illustrate the
variation of Sψ under OFF state with respect to position along
the channel. Fig. 6(c) shows when k increases from 1, inside
cavity zones, Sψ enhances relating to rise in k [18]. Here,
maximum improvement of Sψ by 1.6 × 102 % (75.6%) has been
achieved for decreasing step pattern of APTES (biotin) with
respect to streptavidin, inside nanogap of DM-DDL-HTFET
at channel position = 105 nm under OFF state. Sψ enhances
(reduces) significantly when positively (negatively) charged
 774
Fig. 7. Assessment of (a) IDS -VGS features in presence of APTES and
Streptavidin as neutral bioanalytes (Nf = 0) (b) IDS -VGS features for charged
bioanalytes (APTES as linker) (c) SIDS along VGS of proposed Bio-TFET,
Si-based TFET contenders for neutral bioanalytes (Nf = 0) and (d) SIDS along
VGS of proposed Bio-TFET, Si-based TFET contenders for charged bioanalytes
(APTES as linker) with irregular arrangement at VDS = 0.7 V, Lcavity = 25 nm.
Here structures 1: DM-DDL-HTFET with LSC = 20 nm, 2: DM-DDL-SiTFET,
3: DM-SDL-SiTFET based biosensor will be used for the same configuration in
the next figure.
bioanalytes exist within the nanogap cavity [18]. It illustrates
that the immobilization of enhancing positive (negative) charged
bioanalytes within the cavity provides diminish (enhancement)
of barrier width since positive (negative) charged bioanalytes
persuade electrons (holes) within channel area. Therefore, this
will upgrade (reduce) Sψ to a great amount. It is obvious that
the position of Nf is significant. All the sensitivity peaks are
obtained along the cavity where the interface state charge is
placed. If the Nf is placed in different positions, peak will shift.
As the position of the interface charge is fixed, hence, all the
peaks always occur at the same “position along channel (PAC)”
as shown in Fig. 6(d). Here, maximum deviation of Sψ by an
amount of 85.6% (46.4%) has been attained at position = 105 nm
in the channel region of DM-DDL-HTFET based biosensor for
positive (negative) charged bio-analytes over neutral (APTES,
Nf = 0) with decreasing step pattern.
C. Effect on Drain Current Sensitivity (SIDS )
i) Impact of neutral bioanalytes on IDS : Fig. 7(a) demon-
strates the evaluation of IDS among Si-based Bio-TFET con-
tenders and the projected Bio-TFET (LSC of 20 nm, Lcavity = 25
nm at VDS = 0.7 V) with irregular arrangement of biomolecules.
ION increases with k of neutral bio-molecules owing to a further
band bending close to source-channel intersection [1]. Besides,
Fig. 7(a) demonstrates a maximum enhancement of 8.97 × 102 %
(8.09 × 103 %) and 7.9 × 102 % (9.77 × 103 %) occurs respect-
ing DM-DDL-SiTFET (DM-SDL-SiTFET) while APTES and
Streptavidin exist inside the nano-gap of proposed Bio-TFET.
ii) Impact of charged bioanalytes on IDS : In Fig. 7(b),
ION reduces (improves) for negatively (positively) charged bio-
molecules (± 5 × 1011 /cm2 ), respecting neutral bio-analytes,
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IEEE TRANSACTIONS ON NANOTECHNOLOGY, Volume 19, 2020
Fig. 8. Sensitivity assessment among proposed Bio-TFET and Si-based Bio-
TFET contenders by altering (a) Tox (b) various source sided gate dielectric
material at VDS = 0.7 V, Nf = 0 in the occurrence of APTES as linkers. The
structural descriptions regarding 1-3 have mentioned in Fig. 7.
i.e., APTES. Fig. 7(b) demonstrates an utmost improvement of
8.33 × 103 % (7.63 × 102 %) and 5.50 × 103 % (6.21 × 102 %)
can be realized for DM-DDL-HTFET (DM-DDL-SiTFET) with
respect to DM-SDL-SiTFET when Nf = +5 × 1011 /cm2 and
−5 × 1011 /cm2 are present inside the nano-gap. This is due to
diminution (improvement) in barrier width near source/channel
intersection for hybridization of positively (negatively) charged
bio-molecules inside the nano-gap.
iii) Impact of neutral bioanalytes on SIDS : Hence, SIDS (
= (Ids bio -Ids air )/ Ids air ) is introduced, where Ids bio and Ids air are
drain current for packed and vacant cavity, respectively. SIDS
increases with a rise in k of bio-molecules [22]. Changes in
SIDS with respect to VGS , given in Fig. 7(c) imply the capability
to identify and find out the existence of bio-target within the
nanogap [18]. Fig. 7(c) shows that an utmost improvement
in SIDS is accomplished by 1.76 × 104 % (5.5 × 102 %) for
decreased step arrangements of APTES bio-analytes exist within
the nano-gap of DM-DDL-HTFET (DM-DDL-SiTFET) at VDS
= 0.7 V respecting to DM-SDL-SiTFET based biosensor. Con-
sequently, utmost improvement in SIDS can be realized at lesser
VGS through deviation in k of bio-molecules.
iv) Impact of charged bioanalytes on SIDS : Diminishment
(improvement) in SIDS through an enrichment in –Nf (+Nf ) [18],
is detailed in Fig. 7(d). Besides, an utmost variation in SIDS of
DM-DDL-HTFET and DM-DDL-SiTFET is progressed by 1.23
× 104 % (2.08 × 104 %) and 4.02 × 102 % (3.49 × 102 %) for Nf
= +5 × 1011 /cm2 (−5 × 1011 /cm2 ) at VDS = 0.7 V regarding
DM-SDL-SiTFET based biosensor.
D. Impact of Tox and Source Sided Gate Oxide Material
Fig. 8(a) exhibits the outcomes of Tox alterations on SVTH and
SION . While Tox increases, oxide capacitance (Cox = kεox /Tox )
decreases and thus flat band voltage (VFB ) improves as demon-
strated through, VFB = VFB0 +qNf /Cox ; where VFB0 implies
flat band voltage excepting Nf . So, VTH will be affected [22].
Thus, 1 × 10−7 A/μm current is accomplished afterwards and
hence, ION diminishes [22]. SVTH (SION ) reaches utmost sensi-
tivity enhancement (deterioration) through an extent of 37.54%
(6.26 × 102 %) for DM-DDL-HTFET over SDL-SiTFET while
Tox = 11 nm. Thus, greater Tox is preferred to obtain optimal
performance.
 BHATTACHARYYA et al.: ANALYSIS OF NOISE-IMMUNE DOPINGLESS HETEROJUNCTION BIO-TFET
Fig. 9. Assessment of (a) gm3 , (b) VIP3 , (c) IIP3 , and (d) IMD3 respecting
VGS at VDS = 0.7 V in the occurrence of APTES (k = 3.57, Nf = 0) bioanalytes.
Here structures 1: DM-SDL-SiTFET, 2: DM-DDL-SiTFET and 3: Proposed
Bio-TFET.
Fig. 8(b) demonstrates the impact of various gate oxide layers,
close to source end (SiO2, Al2 O3 and HfO2 ) on SVTH and SION .
Since k of the oxide layer enhances, Cox improves. Thus, VTH
(ION ) will diminish (enhance). Fig. 8(b) describes that SVTH as
well as SION together will enhance with k in all configurations.
A maximum improvement by 54% (71%) for SVTH (SION ) has
been obtained for DM-DDL-HTFET over SDL-SiTFET while
considering HfO2 (k = 22) as gate dielectric. Thus, source
sided gate dielectric with superior k-value is crucial for better
performance of the proposed biosensor. Besides, HfO2 /SiO2
combination as HGD is utilized in the proposed biosensor as
HfO2 proposes superior Ex to realize better ION , and SiO2 may
elude enhancing the ambipolar features. Hence, to achieve best
possible presentation HfO2 is selected during our simulation
work as source-sided dielectric material.
E. Assessment of Noise Characteristics
In favor of elevated speed and superior sensitivity of Bio-FET,
it needs less distortion [1] and improved linearity to estimate the
suitability of the configurations. Non-linear features are gener-
ally correlated through the advanced-order transconductances,
viz. second as well as third-order transconductance derivative
(gm2 and gm3 ), second along with third-order intercept point re-
garding voltage (VIP2 , VIP3 ), intermodulation intercept point of
third-order (IIP3 ) and intermodulation distortion of third-order
(IMD3 ) [2], [5]. These figures of merits (FoMs) can examine the
presentation of Bio-FETs in existence of noise [1]. Thus, the gm2
and gm3 should have lower amplitude [2], [5] while non-linear
distortions within the output signals are considered.
Fig. 9(a–d) demonstrate an assessment of noise characteristics
among proposed Bio-TFET and Si-based TFET contenders at an
identical dimension in presence of APTES bioanalytes. Fig. 9(a)
demonstrates the deviation of gm3 regarding VGS . The peak
value of gm3 specifies non-linearity of the configuration, while
zero-crossing point (ZCP) of gm3 highlights bias point of dc
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775
designed for best possible presentation of the model. Enhance-
ment in SNR is accomplished by maintaining the bias point of
dc close to ZCP [1]. Fig. 9(a) shows that the proposed Bio-TFET
attains relatively lesser peak than its contender and ZCP lies at
lower VGS than the other biosensors.
Fig. 9(b) exhibits the VIP3 variation along VGS . VIP3 signifies
the input potential extrapolation where the first with triplen har-
monic potentials are identical. Thus, VIP3 must be adequately
elevated [2], [5] for enhanced linearity and less distortion [1]
presentation. DM-DDL-HTFET reaches utmost amplitude in
VIP3 in assessment to rest biosensors. This involves the deletion
of the third-order nonlinearity coefficient via device interior
feedback about the second-order nonlinearity [1]. Enhanced
VIP3 of DDL-HTFET denotes insignificant noise influenced
Bio-TFET.
The variation of IIP3 with VGS is depicted in Fig. 9(c).
For improved sensing purpose, noise level must be extremely
low, which can be accomplished through a superior level of
IIP3 . Here, DM-DDL-HTFET achieves advanced IIP3 and el-
evated peak at lesser VGS . The variation of IMD3 with VGS
is represented in Fig. 9(d). IMD3 explains the extrapolated
inter-modulation current by which the first-order with third-
order intermodulation harmonic currents are identical. Here,
DM-DDL-HTFET attains relatively lesser IMD3 relating to VGS
than other Si-based biosensors. Since, the IMD must be less
for a superior device hence; improved performance of DM-
DDL-HTFET in noisy environment has been detected. Hence,
projected structure may be an appreciative contender for the
less-noisy and higher-sensitivity operations.
F. Noise Immunity Verification
Moreover, to scrutinize the noise immunity of DM-DDL-
HTFET based biosensor, several figure of merits (FoMs) akin
to the minimum noise figure (NFmin ), the noise conductance
(gN ), and the optimal source impedance (ZOPT ) were estimated
with respect to frequency [37]. Noise Figure (NF) is usually
employed to estimate the presentation of low-noise-amplifier
(LNA). Inferior value of NF specifies improved performance.
The parameter, gN is an evaluation of how NF enhances while
the source impedance (ZS ) shifts away from the optimal value.
In addition, another noise factor, ZOPT specifies the impedance
which provides NFmin . Hence, at ZS = ZOPT , NF = NFmin .
Fig. 10(a−c) depicts that every noise FoMs enhanced consider-
ably at higher frequencies after immobilization of bio-analytes
inside cavity region.
Fig. 10(a–b) illustrates that DM-DDL-HTFET (LSC = 20 nm)
offers 58.64% (42.18%) and 44.44% (73.33%) lesser NFmin and
gN over DM-SDL-SiTFET at 50 (250) GHz frequency in pres-
ence of APTES bioanalytes inside cavity. Moreover, Fig. 10(c)
shows that ZOPT reaches almost zero at advanced frequencies
for both HTFET and Si-TFET configurations. Hence, the above
analysis specifies that the proposed DM-DDL-HTFET shows
extremely less noise in the existence of bioanalytes and is
consequently appropriate for utilize in bio-sensing purposes.
 776
Fig. 10. Assessment of (a) NFmin (dB) (b) gN (mS) and (c) ZOPT (KΩ) with
respect to frequency (GHz) at VDS = 0.7 V, VGS = 1.2 V in the presence of
APTES. The structural descriptions regarding 1-3 have mentioned in Fig. 9.
Novel semiconductor materials have been reported in the
literature for emerging applications like photoelectronis [38–
40], flexible electronics [41] etc. Double-sided transistor device
processability [42] can also be employed in biosensing designs.
These materials [38–41] need high terminal voltage (IDS =
0.1 µA at VGS = 2.5 V [38], IDS ≈ 0.5 µA at VGS ≈ 30 V
[41]; IDS = 0.8 µA at VGS = 60 V [40]) to obtain output current
in µA range. So, biosensors based on these novel materials will
consume significant powers. Besides, lower magnitude in cur-
rent can be affected by noise and performance can be degraded
due to low SNR. However, researches are going on to improve
the characteristics of these materials and make it compatible for
the biosensing applications.
V. CONCLUSION
A comprehensive study of DM-dual side DL HJ TFET (DM-
DDL-HTFET) based biosensor arrangement having HGD has
been emphasized. Here, a virtual pocket of N+ -type with altering
Ne has been realized through LSC variation underneath the
gate region. At first, the optimized structure has been exam-
ined regarding energy-band gap, mole fraction of HJ material
and Lgap,S . Next, the efficiency of optimized DDL-HTFET
model excluding nano-gap has been juxtaposed with the Si-
based TFET contenders. Moreover, non-uniform arrangements
of bioanalytes inside the cavity region have been commenced to
study steric hindrance issue. Afterwards, noise characteristics
of DM-DDL-HTFET and DM-Si-based TFET biosensors are
also assessed. Hence, the proposed sensor model can provide
advanced features for biosensing functions.
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