ON Semiconductor® FQP27P06 P-Channel QFET® MOSFET -60V,-27A,70mQ Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stipe and DMOS technology. This advanced MOSFET technology has been especially tloredto reduce orslate resistance, and to provide superior switching performance and high avalanche energy strength. These evices are suitable for swriched mode power supplies, ‘audio amlifer, DC motor contol, and variable suiting Features 27 A, -COV, Rosian)= 70 m0) p= 1954, + Low Gate Charge (Typ. 33.06) + Low Grss (Typ. 120 pF) + 100% Avelanche Tested + 175°C Maumum Junction Temperature Rating 10v, : - ° « Absolute Maximum Ratings +, -25cuies otherwise noted Oo Voss ‘Drain-Source Voltage 60 Vv lo ‘Drain Current ‘Continuous (T, “27 A en = am * Yess Gate-Source Voltage 5 v Eas ‘Single Pulsed Avalanche Energy ‘(Note 2) 560, md lar ‘Avalanche Current, ‘(Nate 1) 27 A Ty, Tste Operating and Storage Temperature Range 55 to +175 °c Thermal Characteristics Rese Thermal Resistance, Junction-to-Case, Max. 125, “CW Recs ‘Thermal Resistance, Case-to-Sink, Typ. os “cw LASSOW gLAdD leuueYyd-d 90d2Z7dD4Elerical Characteristics — r--2cuer snus rat ‘Symbol | Parameter ‘Test Conditions [min [Typ | Max | Unit Off Characteristics BVps5_| Drain-Source Greakdoan Volage | Vos = OV. [p= 260A 2 Tv "38Vpgs | Breakdown Votage Temperature F — rs Bees | Brakdown Ip=-2504A Reterencecto2sc | ~ | o00| - | wre toss Vg = 0, Vos “0 - + | wa Zora Gate Votage Oran Curent 70ST 0a =e Tease | Gae-Body Leakage Curent Forward | Vos =-25V. Vos = OV - 100" | na less | Gate-BoWy Leakage Curent Reverse | Vas = 25. Vos = OV ~ 190 | na ‘On Characteristics Ves) | Gato Tested Voge Vos = Vas. 1b = 250A 20 40 | ¥ Rosien. | Static Drain-Source -40V b= Siac Dein So. Ves =-10¥4 lp =-1954 - |ooss| oor | 2 955 | ForwerdTranscondueence Vpg = 30. Tp = 135 — [rays Dynamic Characteristics Cox | laputCopactance Vos =-25, Vos =0¥, = [ioe [3400 | pF Goes | Outpt Capactance one —[-ss0_| 660 | oF Cos | Reverse Trnsfer Capoctance = [70 [455 | oF Switching Characteristics ‘aon | Tun-On Delay Time Vos abv penssa =e sp 1 [Tur-On Rise Time eee =| 795_[ 300 | teen) | Tur-Off Data Timo ~ [0 | 70 | 1 4 FTun-onFat Tine a 05 | att Gate crarge Vos =-48¥. lp =-27 A = [ase [nc s5__| Gate Soares Charge Ves = 109 [sa [= [9c 55 | GaleDren Charge woes [= [8 | = | ne Drain-Source Diode Characteristics and Maximum Ratings Ig | Mmamum Continuous Dre-Source Dode Forward Curent - ara Igy | Mexamum Pulsed Drain-Source Die Forward Curent - 108A Ve0__| Brat Source Dade Fonwerd votiage | Vos = OV. ig =-27A [= [a0 v ‘| Reverse Recovery Tine Vos = OV. ig =-27, = [105 [= | as (| Reverse Recovery Charge di) o= 100 As ~ [oar |= [4c se {ee aga hay aia wap On ne" 2A 2a ‘ha T Solle veg = Svea Sung L225 TREN nett ne 2 LASSOW gLAdD leuueYyd-d 90d2Z7dD4Typical Characteristics Figure 1. On-Reglon Characteristics te sarce tage Figure 2. Transfer Characteristics net (A) HH Lit ‘Daca Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1 SarceDage Figure 4, Body Diode Forward Voltage Variation vs. Source Current ‘and Temperature 7 Capac i te Some Votage M1 x ieee tape Figure 5. Capacitance Characteristics - ,, Total Gate Cargo nh Figure 6. Gate Charge Characteristics 3 LASSOW gLAdD leuueYyd-d 90d2Z7dD4Typical Characteristics cones 4 a H = £ {ancon Terre 1, arto Terps] Figure 7. Breakclown Voltage Variation Figure 8, On-Resistance Variation vs. Temperature vs. Temperature z, Spans Vitan To Cs Tempe Figure 8, Maximum Sate Operating Area Figure 10. Maximum Drain Current vs. Case Temperature ty Square Wave Pulse Duration [ate] Figure 11. Transient Thermal Response Curve ‘4 LASSOW gLAdD leuueYyd-d 90d2Z7dD4Gate Charge Test Circuit & Waveform ta) Same Type r P 6)... Rosistive Switching Test Circuit & Waveforms ‘Charge LASSOW gLAdD leuueYyd-d 90d2Z7dD4Peak Diode Recovery dvidt Test Circuit & Waveforms. Comat of OUT (h.crann) F Veo IU Yes + dul controled by Ry + leg enatolled by puise period Gatopuso wan [—T Vos tov (Driver ) L \ 00 Dede Reverse Cent (our) hat aia 1a Bay Das Foard Grn Vos Vsp (DUT) Body Diode Forward Votage Drop Body Diode Recovery dvidt e LASSOW gLAdD leuueYyd-d 90d2Z7dD4Package Dimensions TO-220 one 88 NOTES: UNLESS OTHERWISE SPECIFIED 1X) REFERENCE JEDEC,TO-20, SSUE K 15) ALL DIMENSIONS ARE IN MILLIMETERS. 6) DIVENSIONNG AND TOLERANCING PER ‘aNsivias “1873 (6) ORAWING FILE NAME: TOz2de09REVE 7 LASSOW gLAdD leuueYyd-d 90d2Z7dD4Sh Snes Se rasa tsar See eine Torts tne te taeda sng Mics v Ok aco puaaae ‘a at es ae naoes aa Ohta crate alm se aes poate SR SL ea eS as Se Se Oia ano Sect Bogan tee ae tay wast ta mente cars nici nar ed ences, arta cl age SSSR ea meme ene Sars ye ora ee Se cree ee es SET iet Re ae ra mee en a oe ee re ‘Sistas tomer pt asin potas ty ayo epg peso lar et ess oo SECS Sencha entre ca) ci epg so teat Ok Sea foes peewee ee Seem oe eee ei reece fae, ste ence Sage jen yc ses epee iy Bo pc tO everce pees pom er ‘bes Se wavs mats Oe ence anatase Lele ee vas ac psec et os ira Se aa teat anne tag ery by Se nara te aad wn nase See SOO SAR SO Saar a a Sa se a Ermsebnnestu asia cayenne oat eae oy rae PUBLICATION ORDERING INFORMATION RENMEI np eee Otten ase wm SSCeaa Sc SSMS eile amarae mater ect pene Ios cian swat" pecaeer to Pennoni secon hanes oceness sop “} © Semiconductor Camporeris insti, LE ‘waconaem cm