Experimentation of Diode-Transistor Logic:

Simulating Circuit Logic Gates Output

Nicholas Noly C. dela Torre
College of Computer and Information Sciences
Polytechnic University of the Philippines
Philippines

underscoring their significance in modern electronics.
Abstract— in this journal, the diode-transistor logic has been
simulated. The objective of this research is to test each case and This study aims to delve into the realm of diode-transistor
to see if they achieve the expected outcomes. After the logic through simulation, offering researchers a nuanced
simulation, the researcher found that the created digital circuits
understanding of its intricacies. The prescribed schema
were accurate.
guides the creation of a digital circuit designed to yield the
Index Terms— simulation, tinkercad, diode, circuit, anticipated output, providing a hands-on exploration of the
integrated circuit, transistor, logic gates, inverter. principles underpinning this sophisticated technology. As we
embark on this journey of experimentation, the potential for
further refinement and innovation in semiconductor
I. INTRODUCTION technology remains boundless, promising to shape the
trajectory of our technological future.

II.EXPERIMENT
In the realm of technological evolution, the inception of
the first transistor marked a watershed moment, leading to a The experiment is done in the following steps. First,
cascade of advancements that have reshaped the landscape of observe and understand the schema, create the circuit based
electronics. Transitioning from the era of vacuum tubes, on the given schema, and finally simulate and test the outputs
which facilitated the transmission of electrical signals for of the circuits created.
large-scale machinery, the advent of transistors
revolutionized semiconductor technology. Not only did it
contribute to miniaturization and cost reduction, but it also
imbued machines with unprecedented computational power.

Today, the pinnacle of semiconductor evolution is

embodied by integrated circuits (ICs), which are currently
undergoing extensive development. From intricate designs to
meticulously optimized placements, every facet of integrated
circuitry is scrutinized to mitigate potential issues. The
ongoing advancements in semiconductor technology not only
promise enhanced performance but also herald further
breakthroughs in our overall technological landscape.

While transistors stand as formidable components, their
synergy with diodes introduces a realm of possibilities for
precise control over electrical currents. Diodes, by allowing
the flow of electricity in a single direction, ensure the quality
of electrical signals within a circuit, serving a pivotal role in
logic implementations.
In the domain of digital circuits, logic gates play a crucial
role in processing signals by representing the underlying
logic of a command through diagrams and symbolic
representations. The diverse array of logic gates available
empowers circuits with tremendous functionality,

Figure 1: diode logic OR gate schema
The experiment started with the diode logic of the OR
gate. The schema has been understood and recreated in
tinkercad. The circuit is created using a DIP switch SPSTx4,
2 diodes, 1 resistor, and 1 LED. After the creation of the
circuit, the simulation has been started and it has been tested.
The output of the circuit has been observed and taken note
of.
 Figure 4: DTL of NOR schema

The experiment then proceeds with the DTL of the NOR

gate. The schema has been understood and recreated in
Figure 2: diode logic of AND gate schema
tinkercad. The circuit is created using a DIP switch SPSTx4,
NPN transistor (BJN), 2 diodes, 4 resistors, and 1 LED. After
The experiment then proceeds with the diode logic of the
the creation of the circuit, the simulation has been started and
AND gate. The schema has been understood and recreated in
it has been tested. The output of the circuit has been observed
tinkercad. The circuit is created using a DIP switch SPSTx4,
and taken note of.
2 diodes, 3 resistors, and 1 LED. After the creation of the
circuit, the simulation has been started and it has been tested.
The output of the circuit has been observed and taken note
of.

Figure 5: DTL of NAND schema

The experiment then proceeds with the DTL of the NAND

gate. The schema has been understood and recreated in
tinkercad. The circuit is created using a DIP switch SPSTx4,
Figure 3: RTL of inverter schema NPN transistor (BJN), 2 diodes, 4 resistors, and 1 LED. After
the creation of the circuit, the simulation has been started and
The experiment then proceeds with the RTL of the inverter it has been tested. The output of the circuit has been observed
gate. The schema has been understood and recreated in and taken note of.
tinkercad. The circuit is created using a DIP switch SPSTx4,
NPN transistor (BJN), 3 resistors, and 1 LED. After the
creation of the circuit, the simulation has been started and it
has been tested. The output of the circuit has been observed
and taken note of.
 III. OBSERVATION AND RESULTS
The experiment started the observation when the
simulation had started. The different switches have been
toggled and the results are the following.

Figure 6: RTL of AND schema

The experiment then proceeds with the RTL of the AND

gate. The schema has been understood and recreated in
Figure 8: created Diode Logic of OR gate
tinkercad. The circuit is created using a DIP switch SPSTx4,
2 NPN transistors (BJN), 2 diodes, 5 resistors, and 1 LED.
A B LED Expected
After the creation of the circuit, the simulation has been
0 0 0 0
started and it has been tested. The output of the circuit has
been observed and taken note of. 0 1 1 1
1 0 1 1
1 1 1 1
Table 1: Diode Logic of OR gate result

The output of the diode logic of the OR gate is similar to

the expected value from the simulation.

Figure 7: RTL of OR schema

The experiment then proceeds with the RTL of the AND

gate. The schema has been understood and recreated in Figure 9: created Diode Logic of AND gate
tinkercad. The circuit is created using a DIP switch SPSTx4,
2 NPN transistors (BJN), 2 diodes, 5 resistors, and 1 LED.
After the creation of the circuit, the simulation has been A B LED Expected
started and it has been tested. The output of the circuit has 0 0 0 0
been observed and taken note of. 0 1 0 0
1 0 0 0
1 1 1 1
Table 2: Diode Logic of AND gate result
 The output of the diode logic of the DTL of the NOR gate
is similar to the expected value from the simulation.
The output of the diode logic of the AND gate is similar to
the expected value from the simulation.

Figure 12: created DTL of NAND

A B LED Expected
0 0 1 1
0 1 1 1
Figure 10: created RTL of inverter 1 0 1 1
1 1 0 0
A B LED Expected Table 5: DTL of NAND result
0 0 1 1
0 1 1 1 The output of the diode logic of the DTL of the NAND
1 0 1 1 gate is similar to the expected value from the simulation.
1 1 0 0
Table 3: RTL of inverter result

The output of the diode logic of the RTL inverter gate is

similar to the expected value from the simulation.

Figure 13: created RTL of AND

A B LED Expected
0 0 0 0
0 1 1 1
1 0 1 1
1 1 1 1
Table 6: result of RTL of AND
Figure 11: created DTL of NOR
The output of the diode logic of RTL of the AND gate is
similar to the expected value from the simulation.
A B LED Expected
0 0 1 1
0 1 0 0
1 0 0 0
1 1 0 0
Table 4: DTL of NOR result
 [8] M. W. Marcovitz and E. Seif, “Analytical Design of Resistor-Coupled
Transistor Logical Circuits,” IEEE Transactions on Electronic
Computers, vol. EC-7, no. 2, pp. 109–119, Jun. 1958, doi:
https://doi.org/10.1109/tec.1958.5222519.
[9] A. S. Gillis, “logic gate (AND, OR, XOR, NOT, NAND, NOR and
XNOR),” WhatIs, 2023.
https://www.techtarget.com/whatis/definition/logic-gate-AND-OR-
XOR-NOT-NAND-NOR-and-XNOR (accessed Dec. 21, 2023).
[10] “Three-Input Majority Logic Gate and Multiple Input Logic Circuit
Based on DNA Strand Displacement,” ACS Publications, 2013.
https://pubs.acs.org/doi/abs/10.1021/nl4016107 (accessed Dec. 21,
2023).

Figure 14: created RTL of OR

A B LED Expected
0 0 0 0
0 1 0 0
1 0 0 0
1 1 1 1
Table 7: RTL of OR result

The output of the diode logic of RTL of the OR gate is the

same as the expected value from the simulation.

IV. CONCLUSION
This set of simulations has shown how the transistor and
diode are utilized to create different effects on the logic that
will be generated. The simulation has been proven successful
because of the 100% similarity with the expected output from
the simulations.

V. RECOMMENDATION
It is recommended that the researcher recreate the simulation
in a real breadboard to properly observe and test the circuit.
It is also recommended to create a new circuit where the used
logic can be applied to.

REFERENCES
[1] M. Riordan, L. Hoddeson, and C. Herring, “The invention of the
transistor,” Reviews of Modern Physics, vol. 71, no. 2, pp. S336–S345,
Mar. 1999, doi: https://doi.org/10.1103/revmodphys.71.s336.
[2] K. Ahmed and K. Schuegraf, “Transistor wars,” IEEE Spectrum, vol. 48,
no. 11, pp. 50–66, Nov. 2011, doi:
https://doi.org/10.1109/mspec.2011.6056626.
[3] W. F. Brinkman, D. E. Haggan, and W. W. Troutman, “A history of the
invention of the transistor and where it will lead us,” IEEE Journal of
Solid-state Circuits, vol. 32, no. 12, pp. 1858–1865, Jan. 1997, doi:
https://doi.org/10.1109/4.643644.
[4] Fluke, “What is a Diode?,” Fluke.com, Oct. 31, 2016.
https://www.fluke.com/en-ph/learn/blog/electrical/what-is-a-
diode#:~:text=A%20diode%20is%20a%20semiconductor,flowing%20in
%20the%20opposite%20direction. (accessed Dec. 21, 2023).
[5] D. P. Masher, “The Design of Diode-Transistor NOR Circuits,” IEEE
Transactions on Electronic Computers, vol. EC-9, no. 1, pp. 15–24,
Mar. 1960, doi: https://doi.org/10.1109/tec.1960.5221599.
[6] G.G. Scarrott and R. W. Mitchell, “High-speed logic circuits using a
tunnel diode transistor feedback amplifier,” Radio and Electronic
Engineer, vol. 26, no. 6, pp. 485–491, Dec. 1963, Accessed: Dec. 21,
2023. [Online]. Available:
https://digital-library.theiet.org/content/journals/10.1049/ree.1963.0178
[7] C. Shen, “A Generalized Resistor-Transistor Logic Circuit and Some
Applications,” IEEE Transactions on Electronic Computers, vol. EC-8,
no. 1, pp. 8–12, Mar. 1959, doi:
https://doi.org/10.1109/tec.1959.5222755.