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K15H1203
K15H1203
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode
IKW15N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode
Features: C
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C G
•qualifiedaccordingtoJEDECfortargetapplications E
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW15N120H3 1200V 15A 2.05V 175°C K15H1203 PG-TO247-3
2 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.70 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 2.12 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient
4 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=15.0A
Tvj=25°C - 2.05 2.40
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 2.50 -
Tvj=175°C - 2.70 -
VGE=0V,IF=7.5A
Diode forward voltage VF Tvj=25°C - 1.80 2.35 V
Tvj=175°C - 1.85 -
VGE=0V,IF=15.0A
Tvj=25°C - 2.40 3.05
Diode forward voltage VF V
Tvj=125°C - 2.60 -
Tvj=175°C - 2.60 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.0 5.8 6.5 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 250.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V,IC=15.0A - 7.5 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 875 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 75 - pF
Reverse transfer capacitance Cres - 45 -
VCC=960V,IC=15.0A,
Gate charge QG - 75.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤600V,
Max. 1000 short circuits IC(SC) tSC≤10µs - - A
52
Time between short circuits: ≥ 1.0s Tvj=175°C
5 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 21 - ns
Rise time tr VCC=600V,IC=15.0A, - 34 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=35.0Ω,RG(off)=35.0Ω, - 260 - ns
Fall time tf Lσ=95nH,Cσ=67pF - 14 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.10 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.45 - mJ
Total switching energy Ets - 1.55 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 260 - ns
Diode reverse recovery charge Qrr VR=600V, - 0.80 - µC
IF=15.0A,
Diode peak reverse recovery current Irrm diF/dt=500A/µs - 7.7 - A
Diode peak rate of fall of reverse
dirr/dt - -110 - A/µs
recoverycurrentduringtb
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 19 - ns
Rise time tr VCC=600V,IC=15.0A, - 30 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=35.0Ω,RG(off)=35.0Ω, - 327 - ns
Fall time tf Lσ=95nH,Cσ=67pF - 43 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.60 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.90 - mJ
Total switching energy Ets - 2.50 - mJ
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr Tvj=175°C, - 470 - ns
Diode reverse recovery charge Qrr VR=600V, - 1.70 - µC
IF=15.0A,
Diode peak reverse recovery current Irrm diF/dt=500A/µs - 9.8 - A
Diode peak rate of fall of reverse
dirr/dt - -80 - A/µs
recoverycurrentduringtb
6 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
70 100
60
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
tp=1µs
50
10 10µs
40 50µs
TC=80°
100µs
TC=110°
30 200µs
TC=80°
500µs
1
TC=110°
20 DC
10
0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=35Ω)
250 30
200
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
20
150
100
10
50
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)
7 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
60 60
VGE=20V VGE=20V
17V 17V
45 45
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
15V 15V
13V 13V
11V 11V
9V 9V
30 30
7V 7V
5V 5V
15 15
0 0
0 2 4 6 0 2 4 6 8
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)
60 5.0
Tj=25°C IC=7.5A
Tj=175°C IC=15A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
4.5 IC=30A
45 4.0
IC,COLLECTORCURRENT[A]
3.5
30 3.0
2.5
15 2.0
1.5
0 1.0
5 10 15 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)
8 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
100 100
10 10
0 5 10 15 20 25 30 10 30 50 70 90 110
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E) IC=15A,testcircuitinFig.E)
1000 7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(on) max.
tr
6
t,SWITCHINGTIMES[ns]
100
10 2
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=15A, (IC=0.5mA)
rG=35Ω,testcircuitinFig.E)
9 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
7 5
Eoff Eoff
Eon Eon
Ets Ets
6
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
4
3
4
3
2
1
1
0 0
0 5 10 15 20 25 30 10 30 50 70 90 110
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E) IC=15A,testcircuitinFig.E)
2.5 3.5
Eoff Eoff
Eon Eon
Ets Ets
3.0
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
2.0
2.5
1.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0 0.0
25 50 75 100 125 150 175 400 500 600 700 800
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=15/0V,IC=15A, (ind.load,Tj=175°C,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E) rG=35Ω,testcircuitinFig.E)
10 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
16
240V
960V
14
1000
VGE,GATE-EMITTERVOLTAGE[V]
12
Cies
Coes
C,CAPACITANCE[pF]
Cres
10
100
6
0 10
0 10 20 30 40 50 60 70 80 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=15A) collector-emittervoltage
(VGE=0V,f=1MHz)
90 50
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
80
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
40
70
60
30
50
20
40
30
10
20
10 0
10 12 14 16 18 10 12 14 16 18 20
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤600V,startatTj=25°C) (VCE≤600V,startatTj≤150°C)
11 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1
D=0.5 D=0.5
0.2 0.2
0.1 0.1 0.1
0.05 0.05
0.02 0.1 0.02
0.01 0.01
single pulse single pulse
0.01
0.01
i: 1 2 3 4 5 i: 1 2 3 4 5
ri[K/W]: 3.9E-3 0.15885 0.23655 0.2763 0.015225 ri[K/W]: 0.67965 0.8319 0.51885 0.08454 9.7E-3
τi[s]: 1.6E-5 3.0E-4 2.9E-3 0.01490178 0.1582781 τi[s]: 2.5E-4 1.5E-3 8.7E-3 0.03938437 0.2738978
0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance Figure 22. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)
800 2.5
Tj=25°C, IF = 15A Tj=25°C, IF = 15A
Tj=175°C, IF = 15A Tj=175°C, IF = 15A
700
Qrr,REVERSERECOVERYCHARGE[µC]
2.0
trr,REVERSERECOVERYTIME[ns]
600
1.5
500
1.0
400
0.5
300
200 0.0
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=600V) (VR=600V)
12 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
15 0
Tj=25°C, IF = 15A Tj=25°C, IF = 15A
Tj=175°C, IF = 15A Tj=175°C, IF = 15A
Irr,REVERSERECOVERYCURRENT[A]
12
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-50
-100
-150
3
0 -200
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=600V) currentslope
(VR=600V)
50 4.0
Tj=25°C IF=3.75A
Tj=175°C IF=7.5A
IF=15A
3.5
40
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
3.0
30
2.5
20
2.0
10
1.5
0 1.0
0 1 2 3 4 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature
13 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
PG-TO247-3
14 Rev.2.1,2014-12-01
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
vGE(t) I,V
90% VGE
dIF/dt a b
a b
10% VGE
t
IC(t)
dI
90% IC
90% IC
10% IC 10% IC
t Figure C. Definition of diode switching
characteristics
vCE(t)
td(off) tf td(on) tr
t
Figure A.
vGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure B.
15 Rev.2.1,2014-12-01
IKW15N120H3
High speed switching series third generation
Revision History
IKW15N120H3
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
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