GENERAL DESCRIPTION:—
‘The 8050 is an NPN epitaxial silicon planar transistor designed for
use in the audio output stage and converterfinverter circuits. :
Complementary to 8550. rose
ABSOLUTE MAXIMUM RATINGS (Note 1)
Maximum Temperatures
‘Storage Temperature ~852C to +195°C
Operating Temperature 1389¢
Lead Temperature (soldering, 10 seconds time limit) 230°C i
Maximum power Disipation
Total Dissipation at 25°C Ambient Temperature (Note 2) 1,0Watt
Total Dissipation at 25°C Case Temperature (Note 2) 30 Watt e8c
Maximum Voltage
VeBO Collector to Bate Voltage gov
YCEO Collector to Emitter Voltage (Note 3) 25V
VEBO Emitter to Bare Voltege ev
Te Collector current (continvovs) 1.58
ELECTRICAL CHARACTERISTICS(25°C Free Air Temperature unletotharwisn noted)
SyMa0L (CHARACTERISTICS. main. tye. Jax ni TEST CONDITIONS
HEE: OC current gain (Note 4) a5 300 le = 100mA Vee = 1V
HEE? DC current gain 40 te = B00mA Vee = 1V
VCE (SAT) | Collector Saturation Voltage (Note 4) a2 fos|v | te= B00ma tb = 60mA|
VBE (SAT) | Base Saturation Voltage (Note 4) 92] 12[ v | te= 800mA tb = 60mA
Lvceo | Collector to Emitter breakdown Voltage (Note 3 4 ai] 25 v [vies 10ma ib =0
BVcbo__| Collector to Base breakdown voltage 20 v | te= toa _le_=0
BVebo | Emitter to Base breakdown voltage 8 v | te= 100ua_le _=0
bo. Coltector cutoff current 01 [ua
hfe High frequency current gain 10
coo Collector to Base copecitance 40 [pF
NoTEs:
(1) These ratings are limiting values above which the serviceability of any semiconductor device may be Impaired.
(2) These ratings givea maximum junction temperature of 145°C, junction to ambient thermal resistance of 120°C/
Watt (derating factor of 8,33mWW/®C} and junction to case thermal resistence of 40°C/W (derating factor of 25mW/°C)
(3) Rating refers to 6 high-current point where collector-to-emitter voltage is lowest,
(4) Pulse Conditions: length<300 us; duty eycle <2%
CLASSIFICATION OF Hee GROUP
GROUP MIN MAX TEST CONDITION
8 85 160 Ie = 100mA Vee = 1V
c 120 200 Ie= 100mA Vee = 1V
° 160 300 Ie = 100mA Vee = 1V
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