SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2501033 is designed for Color TV Vertical Deflection Output, PACKAGE DIMENSIONS especially in Hybrid Intgrated Circuits FEATURES «High Votage Veeo = 150 V ssio2 {2292 @ cemviemont to 256768 e||(afeoss 2 an ze QUALITY GRADE = AE aa Standard SL} BE) 32 Please referto “Quality grade on NEC Semiconductor Devices” rie . know the specification of quality grade on the devices and its 2:32:3} Deere @ recommended applications. ae oe ‘ABSOLUTE MAXIMUM RATINGS (Ts = 25 °C) . ae Collector to Base Votage a. 2 Cole Cotlactor to Emitter Voltage Ll a Emitter to Bese Voltage a | Collector Current (DC) Ic i A Se : Collector Current Pulse)* 8A Total Power Dissipation (Ta= 25°C)** Pr 2.0 W Storage Temperture Tay -B5t0 +160 °C sew $ 10s, Duy yee 5 60% sswmen mounted on ceramic aubstte of 75 em 0.7 mn oarnet o. Te-874 oe ae oe en ss © Nec Cortin 1985 Pratedin JaponNEC ELECTRICAL CHARACTERISTICS (Ts = 25 °C) 2SD1033 (CHARACTERISTIC symeou | min. | T¥P. | MAX. | UNIT ‘TEST CONDITIONS Collector Cutoff Current lee 50 | uA _| Veo= 150, 0 Emittor Cutoff Current so | WA | Vva=4vte-0 DC Current Gain 0 | 10 | 200 Ver=10V,le=04A Collector Saturation Voltage oz | 10 V__[te=500 mA, r= 50. mA Gain Bandwidth Product a 10 Miz _[Ve=10V,e=04A ‘**Pulsed: PW S350 ys, Duty Cycle $2.% he Classification MARKING ™ ic K he 4010 80 60 %0 120 100 to 200 TYPICAL CHARACTERISTICS (Ts = 25 °C) ‘TOTAL POWER DISSIPATION v, COLLECTOR CURRENT ve, AMBIENT TEMPERATURE 25 20] 10 bg r= Total Power Dissipation - W 1 000 ve ~ DC Current Gain th 78cm? x 0.7 mm Ceramic Subst %0 700 150 Ts~Ambiont Temperature =°C DC CURRENT GAIN vs. COLLECTOR CURRENT Vor=10V, Pulsed 5 10 80100 6001000 10.000 |e~ Collector Current =m COLLECTOR TO EMITTER VOLTAGE 74 ‘Vee ~ Collector to Emitter Voltage -V ieee cae BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT = 10 Pulses 1080100 500 1000 10000 le~ Collector Current =m2SD1033 DERATING CURVE OF SAFE OPERATING AREA ‘SAFE OPERATING AREA * : 109 + 5 e ge é 3 2 a j # “ 2 2 1 Slept Non Repos : 0.01 — 5 1 70 706 200 ° Vex Collector to Emir Votape-V Reference ‘Application nove name No. ‘Gualy contol of NEC semiconductors devices FEL202 ‘Quality control guide of semizonduetors devices MELs202 ‘Assembly manual of semiconductors devices, 1E11207 Design of Push Pull Type Switching Regulators Basie) | __Te8-1002 Design eifPush-Pull Type Switching Regulators : (Applications) ad ‘Optimum Base Dive Conditions of Switching Power ae Transistors 0 100 Te Case Temperature 700NEC 2SD1033 memo] No part of this document may be copied or reproduced in any form or by any means without the prior written Consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual Property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. ‘The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear Feactor control systems and life support systems. if customers intend to use NEC devices for above applications oF they intend to use *Standard* quality grade NEC devices for applications not intended by NEC, please contact ‘our sales people in advance. ‘Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, et. ‘Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. Me 926