Ordering number: EN4317 28.5307 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features Low ON resistance. + Very high-speed switehing. = Low-voltage drive + Micaless package fecilitating mounting. Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Vpss 250 + Gate to Source Voltage Voss. +30 v Drain Current(DC) Ip 6 A Drain Current(Pulse) Ibe PWS 10ps, duty cycles 1% 24 A Allowable Power Dissipation Pp 20 WwW Te=25°C 30 Ww Channel Temperature Teh 150, °c Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-§ Breakdown Voltage Vans ~250 Vv G-S Breakdown Voltage Veress Ig=+100sA,Vps=0 +30 v lee Gate Voltage Ipss. Vps= —250V,Vgs=0 -100) pA Drain Current Gate to Source Leakage Current Tess £10 yA Cutoff Voltage Vos =15 25 v Forward Transfer Admittance Yel 3 5 Ss (Sa Drain to Source Rpsion) 07% 10 «2 on State Resistance Input Capacitance Ciss 1250 pF Output Capacitance Coss. 235 pF Reverse Transfer Capacitance Crs. 105, pr Turn-ON Delay Time taony See specified Test Circuit. 24 ns Rise Time t ” 37 ns Turn-OFF Delay Time atom a 155 ns Fall Time te = 130 ns Diode Forward Voltage Yep I= —6A,Vgg=0 -10-15 V Switching Time ‘Test Circuit Package Dimensions 2063 a vooe=190¥ (anit: mm), ga te . tt fe me Ts] aaa r dts 8 caus —- i HEA 8 : Source D: Drain G:Gate ‘smtvo: TO-220ML 45. te SANYO Electri aiekeaaed aCe MoT Tul elie eho ett eee rng may N TOK u 53093TH (KOTO) AX-9094 No.4317-1/3251307 a [Vps=—10V nasy < 1 1.0 i g <0 i a 30 =25 ot eae are $ Drainto sore Vaieeps 9 ate ta Source Voltages — L¥s1 = Ip. a Ros(on) — Ves %@ ipse=Tov i Tree i | . iad Be ve, i 4, , | i ay [| = 83 é T ey : | as Evol | #30 z as 5 i oh Ciss, Coss, Crss_ - Vos bese! T=IMii « , | - i t t | ‘am ge ss g i a i | 2 y é 1 > 10 gos 34 a aad ee sae Gace TemperaureTeo °C DraintoGoursWotag, Von = V SW Tim ASO | | Ie 8 1 T Hi . 0 i = <"B Fo 4 : < a Pa ERNO £ i, of | Linidat8 Rcons See & 3 q | : z a = T = 0) Te=26" al Sel pie aa Sn fis = 7 Dranbultne tg — A DruintoSoace Voltage Vig V | No.4317-2/325)307 = Po = Ta ‘ Po = Te e = i ad 4m ¢ ou gn 5 3 , ee fal Se au 5 x iy 24 S 24 2 of + : i 4 2 z < be — 2040-6080 ROK 180 Ambiont Temperatare,Ta —"C WENo products described or contained hervin are intended for use in surgical implants, le-euppor systems, ‘aerospace equoment, nuclear power control systems, vehicles, disester/etime-prevention equipment and the lke, the falure of which may drecty or ndeectly cause injury, death or propery ess W Anyone purchasing any products described or contained herein for an above-mentioned use shal ® Accept fu responsibilty and indemnity and defend SANYO ELECTRIC CO, LTD. ite affitates, subsidiaries and cisinbutors and af ther ofcers and empioyaes, jointly and Severely, against ary ‘and af claims and itigation and all daagas, ost and expenses associated with such use: ® Not impose any rasponsbilly for any feu or negligence which may be cited i any such claim of litigation on SANYO ELECTRIC CO. LTD, its affilatos, subsidies. and dstibutore or any of ther officers and employees jontly or severly WM loformation (inciudng rout dagrams and orcuit parameters) herein i for example only; itis not guarant- ‘eed for volume production. SANYO befeves information herein is acourate and rekabla, but no guaranteos ‘are made or impied regaring its use or ary infringements of intellectual property nghta or other rghts of third partes, No.4317-3/3