SEMICONDUCTOR TOSHIBA TRANSISTOR 2SC732TM TOSHIBA TECHNICAL DATA SILICON NPN EPITAXIAL TYPE (PCT PROCESS) sersari0 LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit i ¢ High Breakdomn Voltage : VoKO=50V sma. ¢ Excellent hry Linearity hpg (Ig=0.1mA)/ hpg (i¢=2mA)=0.95 (Typ.) © Low Noise : NF (1)=0.54B (Typ.) (f= 100H2) assmax, NF (2)=0.24B (Typ.) (f= 1kH2) oss MAXIMUM RATINGS (Ta =25°C) CHARACTERISTIC SYMBOL | RATING | UNIT Collector-Base Voltage ogo eo [ Vv g + Collector-Emitter Voltage VcEo so | Vv 28 ) i Emitter-Base Voltage VEBO 5 fv * Collector Current Ic 150 |_mA 1. EMITTER Base Current Ip 30 [ mA 2. COLLECTOR Collector Power Dissipation Po. 400 [mW 3. BASE Tunetion Temperatare Tj 125 | °c _||sEDEC 70-92 Storage Temperature Range Teg | —55~125 [°C |pBIAT so-45 TOSHIBA 2-5FIB it: OIE ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL TEST CONDITION Man. | Typ. |Max.| UNIT| Collector Cutoff Current, TcRo. — |= [ory a Emitter Cutoff Current TrBO. — |= [oil a DC Current Gain pe (Note)| Vop=6V, Io=2mA 200 | — | 700 Collector-Rmitier _ - ) Breakdown Voltage VCE (sat) | 10=10mA, IB=1mA — {7 ] 8 Base-Emitter Voltage Vpp__| Vor=6V, Ic=2mA — | oes} — | v ‘Transition Frequeney fr Vor=6V, I¢=1mA = [450 | — |e Collector Output _ ~0 fe Capacitance Cop | Von=10V, In=0, f=1MHz — | 20] — | oF ‘i Von=6V, Ig=0.1mA, f= 1kH2, : Noise Figure new | eek — | o5| 6| v . Vep=6V, Ig=0.1mA, f=1kH2, Noise Figure NF) | eee — | o2} 3| v Note : hg Classification GR ; 200~400, BL : 350~600 2SC7321M 1996-09. TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA 28C732TM TECHNICAL DATA casera Io - Vor Ic - Vor 2 conaon mar Connon FITTER 3 seawe 2 seus 5 2 12 : 5 7 i : : 8 3 (eae 8 COLLECTOR-EMITTER VOLTAGE Vcg (V) 2 cousctonatrren VOLTAGE Vor > 10 bre = Io z VCE (sat) ~ Io e gl COMMON EMITTER f 3 od io z £3 4 8 i 8 i Ee onl B BE on 2 EB | d tye a COLLECTOR CURRENT Ig md) COLLECTOR CURRENT Ie. cna) 1 - Von ; NP = Ver 3 gE = 2 = g 5 a ‘COMMON EMITTER z si a) 7m SASE-METER VOLTAGE. Vag.) COURCTOREMITTER VOLTAGE Yer > 2SC7S2TM 1996-09-02 TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA 28C732TM TECHNICAL DATA ascra NP = Ro, te 2 2 on 2 2 c c a 3 COLLECTOR CURRENT Yo ya) COUHCTOR CURRENT Ie (et NF - RG, Ic = Pe = Ta & E F100 2 : a 5 :* 2 ol ET 8 £ 2 8 I 5 ges z ANMIENT TEMPERATURE Te) we 10 100 00 COLLECTOR CURRENT Ic. (A) TOSHIBA CORPORATION