Cree® EZ1000™ Gen II LEDs Data Sheet CxxxEZ1000-Sxx000-2 Cree's EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary optical design and device submount technology to deliver superior value for high: intensity LEDs. The optic n design maximizes light extraction efficiency and enables a Lambertian radiation p: Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method, These vertically structured, low forward voltage LED chips are approximatel 70 microns in height. Cree's EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, and LCD backlighti aU sy IRN Pesta oun seneral Illumination ee ae ee) een era ee oy aoe) COT ee Ce Raa oa ais os Ey Prec ene Perea ee ac Pid Dee LT) Piette Tree] Dorey Py y (CxxxEZ1000-Sxx000-2 Chip Diagram Top View Bottom View Die Cross Section Bright LED 980 x 980 um’ | L Dielectric Passivation Cathodes ( é x \ 7 t Gold Bond Pads (2) Backside Metalization Anode (+) 3 um AuSncRSe eee Ses DDC Forward Current 1000 ma Peak Forward Gurrent (1/40 duty cycle @ 1 kz) 1250 ma LED 2unction Temperature 150°C Reverse Voltage sv ‘Operating Temperature Range 40°C to +1008 Storage Temperature Range =a0°C to +12560 ferret ‘C4S0EZ1000-Sio000-2 (€460621000-S1x000-2 29 32. 38 2 2 (€527EZ1000-Se000-2 30 34 40 2 35 a PN Junction Area (pm) 950 x 950 £35) ‘Chi Ares (um) 980 x 980 +35 (Chin Thicknass (um) 170 425 “Top Au Bond Pad (um) - Qt. 2 350150 425 ‘Au Bond Pad Thickness (um) 3.0 15 Back Contact Matal Area (jm) 980 x 980 43s Ble Contact Mets Thickness (rn) 30 £15 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an ‘encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly process information, 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All Measurements were made using a Au-plated TO39 header without an encapsulant, Optical characteristics were measured in 2n integrating sphere using Iluminance E. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. Itis crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to ‘optimize product performance, xin eva Cre 8) Dobint Tere), Ree ee Te oar Fy oer co CayStandard Bins for CxxxEZ1000-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ1000-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1000-Oxxx-2) contained in the kit, All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ1000-S38000-2 casoezio00.0221-2 | cxsoezio0e.c222-2 | cxsocziooo-c223-2 | cxsocziooo-ox2s-2 460 mw x (CAS0EZ1000-0217-2 | C450EZ1000-0218-2 | C4S0EZ1000-0219-2 | c450EZ1000-0220-2 i 440 mw : casoezi000.0213-2 | casveziooo-az1e-2 | casneziooo-o2i5-2 | casvezioo0-o216-2 420 mw : casoezsooe0200-2 | cxsveziove-az10-2 | cxsneziooo-o211-2 | cxsteziooo-o2122 400 mw casvezi000.0205-2 | casveziooo-az0e-2 | casnezio00-o207-2 | casvezi0o0-o20e-2 380 mw 345 am 447.5 am 450 nm 452.5 nm 455 Dominant Wavelength ¢460£21000-636000-2 caenezi000.0221-2 | cxeoezi00e.c222-2 | cxcoczio0o-c223-2 | cxcoczioo0-o224-2 460 mw 5 eae0€z1000-0217-2 | casoezso00-o2se-2 | cacoeziono-0219-2 | cs60ez1000-0220-2 i 440 mw # caenezi000.0213-2 | cacoezio0e-a21e-2 | cacoezio00-o215-2 | casoezioo0-ox16-2 3 220 mw i cacoezso00-0200-2 | cacveziooe-a210-2 | cxcoeziooo-o2ii2 | cxeoeziooo-o212-2 400 mw caeoezi000.0205-2 | caeoezio0e-a20e-2 | caeoezio00-o207-2 | casoezi000-o20e-2 380 mW cacoezs0000201-2 | caeoeziooe-a2a2-2 | cxeoezio0o-o203-2 | cxeoezioo0-o20e-2 360 mW 355 nm 457.5 nm 460 nm 462.5 nm 465 Dominant Wavelength ¢527£21000-511000-2 290 mw i 170 mw 5 3 50m z 130 mw 310 mW S20 nm 525 nm 530 nm 535 nm Pee eet eestor Fy foe Dominant Wavelength AmCREE@ Characteristic Curves ‘These are representative measurements for the EZBright 1000. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative intensity vs. Forward Current Relative Intensity vs. Junction Temperature om Es 2 om Bus z z Boom an i zo é dom ima) Junetion Temperature (6) ‘Wavelength Shift vs. Forward Current ‘Wavelength shift vs. Junetion Temperature ze 2° g > p> z > po 4 boo * 4 oma Forward Current vs. Forward Voltage a g zoo é & : & i -Junetion Tempersture °C) ‘Voltage Shift ve. Junction Temperature Junetion Temperature °C)CREE@ Radiation Pattern ‘This Is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip.